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1. 发明申请

US20230102558A1 THREE-COLOR 3D DRAM STACK AND METHODS OF MAKING 有权
公开(公告)号：US20230102558A1
公开(公告)日：2023-03-30
申请号：US17487596
申请日：2021-09-28
申请人： Applied Materials, Inc.
发明人： Arvind Kumar , Mahendra Pakala , Ellie Y. Yieh , John Tolle , Thomas Kirschenheiter , Anchuan Wang , Zihui Li
IPC分类号： H01L27/108 , H01L29/06 , H01L29/786 , H01L21/02 , H01L21/306 , H01L29/66
摘要： Methods of reducing wafer bowing in 3D DRAM devices are described using a 3-color process. A plurality of film stacks are formed on a substrate surface, each of the film stacks comprises two doped SiGe layers having different dopant amounts and/or Si:Ge ratios and a doped silicon layer. 3D DRAM devices are also described.

2. 发明授权

US11566325B2 Silicon carbonitride gapfill with tunable carbon content 有权
公开(公告)号：US11566325B2
公开(公告)日：2023-01-31
申请号：US17120494
申请日：2020-12-14
申请人： Applied Materials, Inc.
发明人： Mei-Yee Shek , Bhargav S. Citla , Joshua Rubnitz , Jethro Tannos , Chentsau Chris Ying , Srinivas D. Nemani , Ellie Y. Yieh
IPC分类号： C23C16/36 , C01B21/082 , C23C16/44 , C23C16/50 , C09D1/00
摘要： Methods for plasma enhanced chemical vapor deposition (PECVD) of silicon carbonitride films are described. A flowable silicon carbonitride film is formed on a substrate surface by exposing the substrate surface to a precursor and a reactant, the precursor having a structure of general formula (I) or general formula (II) wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor, and then exposing the substrate to an ammonia plasma.

3. 发明授权

US11114306B2 Methods for depositing dielectric material 有权
公开(公告)号：US11114306B2
公开(公告)日：2021-09-07
申请号：US16132837
申请日：2018-09-17
申请人： Applied Materials, Inc.
发明人： Bhargav Citla , Jethro Tannos , Jingyi Li , Douglas A. Buchberger, Jr. , Zhong Qiang Hua , Srinivas D. Nemani , Ellie Y. Yieh
IPC分类号： C23C16/505 , H01L21/311 , H01L21/762 , H01J37/32 , H01L21/3065 , H01L21/67 , C23C16/515 , H01L21/02 , C23C16/509 , C23C16/517
摘要： Embodiments of the present invention provide an apparatus and methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications. In one embodiment, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.

4. 发明申请

US20200161176A1 Cluster processing system for forming a transition metal material 审中-公开
公开(公告)号：US20200161176A1
公开(公告)日：2020-05-21
申请号：US16197048
申请日：2018-11-20
申请人： Applied Materials, Inc.
发明人： Keith Tatseun WONG , Srinivas D. Nemani , Ellie Y. Yieh
IPC分类号： H01L21/768 , H01L21/285 , H01L23/532
摘要： Methods for forming a transition metal material on a substrate and thermal processing such metal containing material in a cluster processing system are provided. In one embodiment, a method for a device structure for semiconductor devices includes forming a two-dimensional transition metal dichalcogenide layer on a substrate in a first processing chamber disposed in a cluster processing system, thermally treating the two-dimensional transition metal dichalcogenide layer to form a treated metal layer in a second processing chamber disposed in the cluster processing system, and forming a capping layer on the treated metal layer in a third processing chamber disposed in the cluster processing system.

5. 发明授权

US10429747B2 Hybrid laser and implant treatment for overlay error correction 有权
公开(公告)号：US10429747B2
公开(公告)日：2019-10-01
申请号：US15811341
申请日：2017-11-13
申请人： Applied Materials, Inc.
发明人： Mangesh Bangar , Srinivas D. Nemani , Steve G. Ghanayem , Ellie Y. Yieh
IPC分类号： G03F7/20
摘要： Embodiments disclosed herein relate to methods and systems for correcting overlay errors on a surface of a substrate. A processor performs a measurement process on a substrate to obtain an overlay error map. The processor determines an order of treatment for the substrate based on the overlay error map. The order of treatment includes one or more treatment processes. The processor generates a process recipe for a treatment process of the one or more treatment processes in the order of treatment. The processor provides the process recipe to a substrate treatment apparatus.

6. 发明授权

US09815091B2 Roll to roll wafer backside particle and contamination removal 有权
公开(公告)号：US09815091B2
公开(公告)日：2017-11-14
申请号：US14476398
申请日：2014-09-03
申请人： Applied Materials, Inc.
发明人： Christopher S. Ngai , Huixiong Dai , Ludovic Godet , Ellie Y. Yieh
IPC分类号： B08B7/00 , B08B1/00 , H01L21/46 , H01L21/687 , H01L21/67 , H01L21/683 , B08B6/00
CPC分类号： B08B1/001 , B08B1/00 , B08B1/008 , B08B6/00 , B08B7/0028 , H01L21/67028 , H01L21/67253 , H01L21/6831 , H01L21/68742
摘要： Particulate cleaning assemblies and methods for cleaning are disclosed. In one example, a device for removing particles from a backside surface of a substrate is described. The device includes a chamber body with a substrate chucking device, a particulate cleaning article positioned over the substrate supporting surface, an optical sensing device positioned under the particulate cleaning article and a substrate positioning device separates the particulate cleaning article and a substrate. In another example, a method for removing particles from a substrate is disclosed. The method includes positioning a substrate with a processing surface and a supporting surface in a process chamber. At least a portion of the substrate can be chucked to a substrate chucking device, the substrate chucking device having a substrate supporting surface with a particulate cleaning article positioned thereon. The substrate is then separated from the particulate cleaning article leaving particles behind.

7. 发明申请

US20170203364A1 ADDITIVE MANUFACTURING WITH LASER AND PLASMA 审中-公开
公开(公告)号：US20170203364A1
公开(公告)日：2017-07-20
申请号：US15326910
申请日：2015-07-16
申请人： Applied Materials, Inc.
发明人： Kartik Ramaswamy , Anantha K. Subramani , Kasiraman Krishnan , Jennifer Y. Sun , Srinivas D. Nemani , Thomas B. Brezoczky , Christopher A. Rowland , Simon Yavelberg , Swaminathan Srinivasan , Nag B. Patibandla , Ellie Y. Yieh , Hou T. Ng
IPC分类号： B22F3/105 , B33Y30/00 , B33Y50/02 , B28B1/00 , B23K26/70 , B23K10/02 , B23K10/00 , B23K26/342 , B23K26/00 , B33Y10/00 , B22F1/00
CPC分类号： B22F3/1055 , B22F1/0003 , B22F2003/1051 , B22F2003/1057 , B22F2202/13 , B22F2301/205 , B22F2998/10 , B23K10/006 , B23K10/027 , B23K26/0006 , B23K26/342 , B23K26/702 , B23K2103/14 , B28B1/001 , B29C64/153 , B33Y10/00 , B33Y30/00 , B33Y50/02 , G05B2219/49007
摘要： An additive manufacturing system includes a platen, a feed material dispenser apparatus configured to deliver a feed material over the platen, a laser configured to produce a laser beam, a controller configured to direct the laser beam to locations specified by data stored in a computer-readable medium to cause the feed material to fuse, and a plasma source configured to produce ions that are directed to substantially the same location on the platen as the laser beam.

8. 发明授权

US09484274B2 Methods for reducing semiconductor substrate strain variation 有权
标题翻译：减少半导体衬底应变变化的方法
公开(公告)号：US09484274B2
公开(公告)日：2016-11-01
申请号：US14730198
申请日：2015-06-03
申请人： Applied Materials, Inc.
发明人： Christopher Dennis Bencher , Ehud Tzuri , Ellie Y. Yieh
IPC分类号： H01L21/02 , H01L21/66 , H01L21/268
CPC分类号： H01L22/20 , H01L21/268 , H01L21/2686 , H01L22/12
摘要： Embodiments of the disclosure provide methods and system for correcting lithographic film stress/strain variations on a semiconductor substrate using laser energy treatment process. In one embodiment, a method for correcting film stress/strain variations on a substrate includes performing a measurement process in a metrology tool on a substrate to obtain a substrate distortion or an overlay error map, determining dose of laser energy in a computing system to correct film stress/strain variations or substrate distortion based on the overlay error map, and providing a laser energy treatment recipe to a laser energy apparatus based on the dose of laser energy determined to correct substrate distortion or film stress/strain variations.
摘要翻译：本公开的实施例提供了使用激光能量处理过程来校正半导体衬底上的平版印刷薄膜应力/应变变化的方法和系统。在一个实施例中，用于校正衬底上的膜应力/应变变化的方法包括在衬底上的测量工具中执行测量过程以获得衬底失真或重叠误差图，确定计算系统中的激光能量的量化以校正基于覆盖误差图的薄膜应力/应变变化或基板变形，以及基于确定用于校正基板变形或薄膜应力/应变变化的激光能量的剂量，向激光能量装置提供激光能量处理配方。

9. 发明授权

US09484202B1 Apparatus and methods for spacer deposition and selective removal in an advanced patterning process 有权
标题翻译：在先进的图案化工艺中用于间隔物沉积和选择性去除的装置和方法
公开(公告)号：US09484202B1
公开(公告)日：2016-11-01
申请号：US14729932
申请日：2015-06-03
申请人： Applied Materials, Inc.
发明人： Jie Zhou , Chentsau Ying , Shambhu N. Roy , Srinivas D. Nemani , Jingjing Liu , Ellie Y. Yieh
IPC分类号： H01L21/302 , H01L21/033 , H01L21/311
CPC分类号： H01L21/311 , H01L21/0337
摘要： Embodiments herein provide apparatus and methods for performing a deposition and a patterning process on a spacer layer with good profile control in multiple patterning processes. In one embodiment, a method for depositing and patterning a spacer layer during a multiple patterning process includes conformally forming a spacer layer on an outer surface of a patterned structure disposed on a substrate, wherein the patterned structure has a first group of openings defined therebetween, selectively treating a first portion of the spacer layer formed on the substrate without treating a second portion of the spacer layer, and selectively removing the treated first portion of the spacer layer.
摘要翻译：本文的实施例提供了用于在多个图案化工艺中对具有良好轮廓控制的间隔层执行沉积和图案化工艺的装置和方法。在一个实施例中，在多次图案化工艺期间用于沉积和图案化间隔层的方法包括在设置在衬底上的图案化结构的外表面上共形形成间隔层，其中图案化结构具有限定在其间的第一组开口，选择性地处理形成在衬底上的间隔层的第一部分，而不处理间隔层的第二部分，并且选择性地去除间隔层的经处理的第一部分。

10. 发明授权

US09412613B2 Development of high etch selective hardmask material by ion implantation into amorphous carbon films 有权
标题翻译：通过离子注入到无定形碳膜中开发高蚀刻选择性硬掩模材料
公开(公告)号：US09412613B2
公开(公告)日：2016-08-09
申请号：US14574928
申请日：2014-12-18
申请人： Applied Materials, Inc.
发明人： Pramit Manna , Abhijit Basu Mallick , Ludovic Godet , Yongmei Chen , Jun Xue , Mukund Srinivasan , Ellie Y. Yieh , Srinivas D. Nemani
IPC分类号： H01L21/308 , H01L21/311 , H01L21/3115
CPC分类号： H01L21/3086 , H01L21/31144 , H01L21/31155
摘要： Embodiments described herein provide for a method of forming an etch selective hardmask. An amorphous carbon hardmask is implanted with various dopants to increase the hardness and density of the hardmask. The ion implantation of the amorphous carbon hardmask also maintains or reduces the internal stress of the hardmask. The etch selective hardmask generally provides for improved patterning in advanced NAND and DRAM devices.
摘要翻译：本文描述的实施例提供了形成蚀刻选择性硬掩模的方法。非晶碳硬掩模被植入各种掺杂剂以增加硬掩模的硬度和密度。无定形碳硬掩模的离子注入还保持或减少硬掩模的内部应力。蚀刻选择性硬掩模通常提供高级NAND和DRAM器件中的改进的图案化。

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