专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10879094B2 Electrostatic chucking force measurement tool for process chamber carriers 有权
公开(公告)号：US10879094B2
公开(公告)日：2020-12-29
申请号：US15360412
申请日：2016-11-23
申请人： APPLIED MATERIALS, INC.
发明人： Srinivas D. Nemani , Gautam Pisharody , Seshadri Ramaswami , Shambhu N. Roy , Niranjan Kumar
IPC分类号： H01L21/67 , H01L21/683 , G01R29/12
CPC分类号： H01L21/67288 , G01R29/12 , H01L21/67253 , H01L21/6831 , H01L21/6833 , H01L21/6838
摘要： An electrostatic chucking force tool is described that may be used on workpiece carriers for micromechanical and semiconductor processing. One example includes a workpiece fitting to hold a workpiece when gripped by an electrostatic chucking force by an electrostatic chuck, an arm coupled to the workpiece fitting to pull the workpiece through the workpiece fitting laterally across the chuck, and a force gauge coupled to the arm to measure an amount of force with which the workpiece fitting is pulled by the arm in order to move the workpiece.

2. 发明申请

US20160225651A1 HIGH TEMPERATURE CHUCK FOR PLASMA PROCESSING SYSTEMS 有权
标题翻译：用于等离子体加工系统的高温冲击
公开(公告)号：US20160225651A1
公开(公告)日：2016-08-04
申请号：US14612472
申请日：2015-02-03
申请人： Applied Materials, Inc.
发明人： Toan Q. Tran , Sultan Malik , Dmitry Lubomirsky , Shambhu N. Roy , Satoru Kobayashi , Tae Seung Cho , Soonam Park , Shankar Venkataraman
IPC分类号： H01L21/683 , H01L21/67 , H01L21/3065
CPC分类号： H01L21/6833 , H01L21/3065 , H01L21/67103
摘要： A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.
摘要翻译：晶片卡盘组件包括圆盘，轴和基座。绝缘材料限定了圆盘的顶表面，加热元件嵌入绝缘材料内，导电板位于绝缘材料的下方。轴包括与板连接的壳体，以及用于加热器元件和电极的电连接器。导电基座壳体与轴壳体耦合，并且连接器穿过基座壳体内的端子块。等离子体处理的方法包括将工件加载到具有绝缘顶表面的卡盘上，在顶表面内的两个电极之间提供直流电压差，通过使电流通过加热器元件来加热卡盘，在围绕卡盘的腔室中提供工艺气体并且在卡盘下方的导电板与腔室的一个或多个壁之间提供RF电压。

3. 发明申请

US20180025931A1 PROCESSED WAFER AS TOP PLATE OF A WORKPIECE CARRIER IN SEMICONDUCTOR AND MECHANICAL PROCESSING 审中-公开
公开(公告)号：US20180025931A1
公开(公告)日：2018-01-25
申请号：US15217328
申请日：2016-07-22
申请人： APPLIED MATERIALS, INC.
发明人： Srinivas D. Nemani , Shambhu N. Roy , Gautam Pisharody , Douglas A. Buchberger, JR. , Ellie Y. Yieh , Zhong Qiang Hua
IPC分类号： H01L21/683 , C23C16/513
CPC分类号： H01L21/6833 , C23C16/4581 , C23C16/4586 , C23C16/513
摘要： A processed wafer is described that may be used as a workpiece carrier in semiconductor and mechanical processing. In some examples, the workpiece carrier includes a substrate, an electrode formed on the substrate to carry an electric charge to grip a workpiece, a through hole through the substrate and connected to the electrode, and a dielectric layer over the substrate to isolate the electrode from the workpiece.

4. 发明申请

US20170309509A1 HIGH TEMPERATURE CHUCK FOR PLASMA PROCESSING SYSTEMS 审中-公开
公开(公告)号：US20170309509A1
公开(公告)日：2017-10-26
申请号：US15642977
申请日：2017-07-06
申请人： Applied Materials, Inc.
发明人： Toan Q. Tran , Sultan Malik , Dmitry Lubomirsky , Shambhu N. Roy , Satoru Kobayashi , Tae Seung Cho , Soonam Park , Shankar Venkataraman
IPC分类号： H01L21/683 , H01L21/67 , H01L21/3065
CPC分类号： H01L21/6833 , H01L21/3065 , H01L21/67103
摘要： A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.

5. 发明授权

US09382625B2 Remote plasma source based cyclic CVD process for nanocrystalline diamond deposition 有权
标题翻译：用于纳米晶金刚石沉积的远程等离子体源循环CVD工艺
公开(公告)号：US09382625B2
公开(公告)日：2016-07-05
申请号：US14267865
申请日：2014-05-01
申请人： Applied Materials, Inc.
发明人： Jun Xue , Jingjing Liu , Yongmei Chen , Ludovic Godet , Chentsau Ying , Shambhu N. Roy
IPC分类号： C23C16/56 , C23C16/27 , C23C16/46 , C23C16/455 , C23C16/505
CPC分类号： C23C16/56 , C23C16/27 , C23C16/272 , C23C16/452 , C23C16/45523 , C23C16/45557 , C23C16/46 , C23C16/505
摘要： Methods for making a nanocrystalline diamond layer are disclosed herein. A method of forming a layer can include activating a deposition gas comprising an alkane and a hydrogen containing gas at a first pressure, delivering the activated deposition gas to the substrate at a second pressure which is less than the first pressure, forming a nanocrystalline diamond layer, treating the layer with an activated hydrogen containing gas to remove one or more polymers from the surface and repeating the cycle to achieve a desired thickness.
摘要翻译：本文公开了制备纳米晶体金刚石层的方法。形成层的方法可以包括在第一压力下激活包括烷烃和含氢气体的沉积气体，在小于第一压力的第二压力下将活化的沉积气体输送到衬底，形成纳米晶体金刚石层用活化的含氢气体处理层以从表面去除一种或多种聚合物并重复该循环以达到所需的厚度。

6. 发明申请

US20180144959A1 ELECTROSTATIC CHUCKING FORCE MEASUREMENT TOOL FOR PROCESS CHAMBER CARRIERS 审中-公开
公开(公告)号：US20180144959A1
公开(公告)日：2018-05-24
申请号：US15360412
申请日：2016-11-23
申请人： APPLIED MATERIALS, INC.
发明人： Srinivas D. Nemani , Gautam Pisharody , Seshadri Ramaswami , Shambhu N. Roy , Niranjan Kumar
IPC分类号： H01L21/67 , H01L21/683 , G01R29/12
CPC分类号： H01L21/67288 , G01R29/12 , H01L21/67253 , H01L21/6831 , H01L21/6833 , H01L21/6838
摘要： An electrostatic chucking force tool is described that may be used on workpiece carriers for micromechanical and semiconductor processing. One example includes a workpiece fitting to hold a workpiece when gripped by an electrostatic chucking force by an electrostatic chuck, an arm coupled to the workpiece fitting to pull the workpiece through the workpiece fitting laterally across the chuck, and a force gauge coupled to the arm to measure an amount of force with which the workpiece fitting is pulled by the arm in order to move the workpiece.

7. 发明授权

US09728437B2 High temperature chuck for plasma processing systems 有权
公开(公告)号：US09728437B2
公开(公告)日：2017-08-08
申请号：US14612472
申请日：2015-02-03
申请人： Applied Materials, Inc.
发明人： Toan Q. Tran , Sultan Malik , Dmitry Lubomirsky , Shambhu N. Roy , Satoru Kobayashi , Tae Seung Cho , Soonam Park , Shankar Venkataraman
IPC分类号： H01L21/683 , H01L21/3065 , H01L21/67
CPC分类号： H01L21/6833 , H01L21/3065 , H01L21/67103
摘要： A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.

8. 发明授权

US09484202B1 Apparatus and methods for spacer deposition and selective removal in an advanced patterning process 有权
标题翻译：在先进的图案化工艺中用于间隔物沉积和选择性去除的装置和方法
公开(公告)号：US09484202B1
公开(公告)日：2016-11-01
申请号：US14729932
申请日：2015-06-03
申请人： Applied Materials, Inc.
发明人： Jie Zhou , Chentsau Ying , Shambhu N. Roy , Srinivas D. Nemani , Jingjing Liu , Ellie Y. Yieh
IPC分类号： H01L21/302 , H01L21/033 , H01L21/311
CPC分类号： H01L21/311 , H01L21/0337
摘要： Embodiments herein provide apparatus and methods for performing a deposition and a patterning process on a spacer layer with good profile control in multiple patterning processes. In one embodiment, a method for depositing and patterning a spacer layer during a multiple patterning process includes conformally forming a spacer layer on an outer surface of a patterned structure disposed on a substrate, wherein the patterned structure has a first group of openings defined therebetween, selectively treating a first portion of the spacer layer formed on the substrate without treating a second portion of the spacer layer, and selectively removing the treated first portion of the spacer layer.
摘要翻译：本文的实施例提供了用于在多个图案化工艺中对具有良好轮廓控制的间隔层执行沉积和图案化工艺的装置和方法。在一个实施例中，在多次图案化工艺期间用于沉积和图案化间隔层的方法包括在设置在衬底上的图案化结构的外表面上共形形成间隔层，其中图案化结构具有限定在其间的第一组开口，选择性地处理形成在衬底上的间隔层的第一部分，而不处理间隔层的第二部分，并且选择性地去除间隔层的经处理的第一部分。

9. 发明授权

US10468285B2 High temperature chuck for plasma processing systems 有权
公开(公告)号：US10468285B2
公开(公告)日：2019-11-05
申请号：US15642977
申请日：2017-07-06
申请人： Applied Materials, Inc.
发明人： Toan Q. Tran , Sultan Malik , Dmitry Lubomirsky , Shambhu N. Roy , Satoru Kobayashi , Tae Seung Cho , Soonam Park , Shankar Venkataraman
IPC分类号： H01L21/683 , H01L21/3065 , H01L21/67
摘要： A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.

10. 发明申请

US20180122679A1 STRESS BALANCED ELECTROSTATIC SUBSTRATE CARRIER WITH CONTACTS 审中-公开
公开(公告)号：US20180122679A1
公开(公告)日：2018-05-03
申请号：US15337973
申请日：2016-10-28
申请人： APPLIED MATERIALS, INC.
发明人： Shambhu N. Roy , Gautam Pisharody , Seshadri Ramaswami , Srinivas D. Nemani , Zhong Qiang Hua , Douglas A. Buchberger, JR. , Niranjan Kumar , Ellie Y. Yieh
IPC分类号： H01L21/683 , H01L21/67
CPC分类号： H01L21/67248 , H01L21/67103 , H01L21/67109 , H01L21/6831 , H01L21/6835 , H01L21/68785 , H01L2021/6006 , H01L2221/68304
摘要： A substrate carrier with contacts is described that is balanced for thermal stress. In one example workpiece carrier has a rigid substrate configured to support a workpiece to be carried for processing, a first dielectric layer over the substrate, an electrostatic conductive electrode over the first dielectric layer to electrostatically hold the workpiece to be carried, a second dielectric layer over the electrode to electrically isolate the workpiece from the electrode, and a third dielectric layer under the substrate to counter thermal stress applied to the substrate by the first and second dielectric layers.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式