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1. 发明授权

US10460915B2 Rotatable substrate support having radio frequency applicator 有权
公开(公告)号：US10460915B2
公开(公告)日：2019-10-29
申请号：US15582282
申请日：2017-04-28
申请人： Applied Materials, Inc.
发明人： Satoru Kobayashi , Kirby Hane Floyd , Hiroji Hanawa , Soonam Park , Dmitry Lubomirsky
IPC分类号： H01L21/687 , H01J37/32 , H02K7/14
摘要： A substrate support assembly includes a shaft assembly, a pedestal coupled to a portion of the shaft assembly, and a first rotary connector coupled to the shaft assembly, wherein the first rotary connector comprises a first coil member surrounding a rotatable shaft member that is electrically coupled to the shaft assembly, the first coil member being rotatable with the rotatable shaft, and a second coil member surrounding the first coil member, the second coil member being stationary relative to the first coil member, wherein the first coil member electrically couples with the second coil member when the rotating radio frequency applicator is energized and provides a radio frequency signal/power to the pedestal through the shaft assembly.

2. 发明授权

US09305749B2 Methods of directing magnetic fields in a plasma source, and associated systems 有权
标题翻译：在等离子体源和相关系统中引导磁场的方法
公开(公告)号：US09305749B2
公开(公告)日：2016-04-05
申请号：US14600397
申请日：2015-01-20
申请人： Applied Materials, Inc.
发明人： Zheng John Ye , Jay D. Pinson, II , Hiroji Hanawa , Juan Carlos Rocha-Alvarez
IPC分类号： H05B37/02 , H01J37/32
CPC分类号： H01J37/3211 , H01J37/32458 , H01J37/32522 , H01J37/32669
摘要： A plasma source includes a plasma vessel that includes a dielectric material that encloses a cavity of a toroidal shape. The toroidal shape defines a toroidal axis therethrough. The vessel forms input and output connections, each of the input and output connections being in fluid communication with the cavity. One or more metal plates are disposed adjacent to the plasma vessel for cooling the plasma vessel. A magnetic core is disposed along the toroidal axis such that respective first and second ends of the magnetic core extend beyond axially opposed sides of the plasma vessel. First and second induction coils are wound about the respective first and second ends of the magnetic core. A plasma is generated in the cavity when an input gas is supplied through the input connection and an oscillating electrical current is supplied to the first and second induction coils.
摘要翻译：等离子体源包括等离子体容器，其包括围绕环形形状的空腔的电介质材料。环形形状限定了穿过其中的环形轴线。容器形成输入和输出连接，每个输入和输出连接与空腔流体连通。一个或多个金属板与等离子体容器相邻设置以冷却等离子体容器。磁芯沿着环形轴线设置，使得磁芯的相应的第一和第二端延伸超过等离子体容器的轴向相对侧。第一和第二感应线圈缠绕在磁芯的相应的第一和第二端。当通过输入连接提供输入气体并且向第一和第二感应线圈提供振荡电流时，在空腔中产生等离子体。

3. 发明授权

US10580623B2 Plasma processing using multiple radio frequency power feeds for improved uniformity 有权
公开(公告)号：US10580623B2
公开(公告)日：2020-03-03
申请号：US14539914
申请日：2014-11-12
申请人： Applied Materials, Inc.
发明人： Zheng John Ye , Ganesh Balasubramanian , Thuy Britcher , Jay D. Pinson, II , Hiroji Hanawa , Juan Carlos Rocha-Alvarez , Kwangduk Douglas Lee , Martin Jay Seamons , Bok Hoen Kim , Sungwon Ha
IPC分类号： C23C16/00 , H01L21/00 , H01J37/32 , C23C16/509
摘要： A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.

4. 发明授权

US10403535B2 Method and apparatus of processing wafers with compressive or tensile stress at elevated temperatures in a plasma enhanced chemical vapor deposition system 有权
公开(公告)号：US10403535B2
公开(公告)日：2019-09-03
申请号：US14824229
申请日：2015-08-12
申请人： Applied Materials, Inc.
发明人： Zheng John Ye , Jay D. Pinson, II , Hiroji Hanawa , Jianhua Zhou , Xing Lin , Ren-Guan Duan , Kwangduk Douglas Lee , Bok Hoen Kim , Swayambhu P. Behera , Sungwon Ha , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Prashant Kumar Kulshreshtha , Jason K. Foster , Mukund Srinivasan , Uwe P. Haller , Hari K. Ponnekanti
IPC分类号： H02N13/00 , H01L21/683 , H01L21/687
摘要： Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×107 ohm-cm to about 1×1015 ohm-cm in a temperature of about 250° C. to about 700° C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600° C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.

5. 发明授权

US11276562B2 Plasma processing using multiple radio frequency power feeds for improved uniformity 有权
公开(公告)号：US11276562B2
公开(公告)日：2022-03-15
申请号：US16807156
申请日：2020-03-02
申请人： Applied Materials, Inc.
发明人： Zheng John Ye , Ganesh Balasubramanian , Thuy Britcher , Jay D. Pinson, II , Hiroji Hanawa , Juan Carlos Rocha-Alvarez , Kwangduk Douglas Lee , Martin Jay Seamons , Bok Hoen Kim , Sungwon Ha
IPC分类号： H01L21/00 , C23C16/00 , H01J37/32 , C23C16/509
摘要： A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.

6. 发明申请

US20150228456A1 METHODS OF DIRECTING MAGNETIC FIELDS IN A PLASMA SOURCE, AND ASSOCIATED SYSTEMS 有权
标题翻译：在等离子体源中引导磁场的方法和相关系统
公开(公告)号：US20150228456A1
公开(公告)日：2015-08-13
申请号：US14600397
申请日：2015-01-20
申请人： Applied Materials, Inc.
发明人： ZHENG JOHN YE , Jay D. Pinson, II , Hiroji Hanawa , Juan Carlos Rocha-Alvarez
IPC分类号： H01J37/32
CPC分类号： H01J37/3211 , H01J37/32458 , H01J37/32522 , H01J37/32669
摘要： A plasma source includes a plasma vessel that includes a dielectric material that encloses a cavity of a toroidal shape. The toroidal shape defines a toroidal axis therethrough. The vessel forms input and output connections, each of the input and output connections being in fluid communication with the cavity. One or more metal plates are disposed adjacent to the plasma vessel for cooling the plasma vessel. A magnetic core is disposed along the toroidal axis such that respective first and second ends of the magnetic core extend beyond axially opposed sides of the plasma vessel. First and second induction coils are wound about the respective first and second ends of the magnetic core. A plasma is generated in the cavity when an input gas is supplied through the input connection and an oscillating electrical current is supplied to the first and second induction coils.
摘要翻译：等离子体源包括等离子体容器，其包括围绕环形形状的空腔的电介质材料。环形形状限定了穿过其中的环形轴线。容器形成输入和输出连接，每个输入和输出连接与空腔流体连通。一个或多个金属板与等离子体容器相邻设置以冷却等离子体容器。磁芯沿着环形轴线设置，使得磁芯的相应的第一和第二端延伸超过等离子体容器的轴向相对侧。第一和第二感应线圈缠绕在磁芯的相应的第一和第二端。当通过输入连接提供输入气体并且向第一和第二感应线圈提供振荡电流时，在空腔中产生等离子体。

7. 发明授权

US08970226B2 In-situ VHF current sensor for a plasma reactor 有权
标题翻译：用于等离子体反应器的原位VHF电流传感器
公开(公告)号：US08970226B2
公开(公告)日：2015-03-03
申请号：US13944026
申请日：2013-07-17
申请人： Applied Materials, Inc.
发明人： Hiroji Hanawa , Satoru Kobayashi , Kartik Ramaswamy , Shahid Rauf
IPC分类号： G01R27/26 , G01R25/02 , G01R15/18 , G01R27/32 , G01R19/00 , H05H1/00
CPC分类号： G01R27/32 , G01R19/0061 , H05H1/0081
摘要： An RF current probe is encapsulated in a conductive housing to permit its placement inside a plasma reactor chamber. An RF voltage probe is adapted to have a long coaxial cable to permit a measuring device to be connected remotely from the probe without distorting the voltage measurement.
摘要翻译： RF电流探针被封装在导电壳体中以允许其放置在等离子体反应器室内。 RF电压探头适于具有长同轴电缆，以允许测量设备远离探头连接，而不会使电压测量失真。

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