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1. 发明申请

US20210280418A1 SYSTEM AND METHOD FOR RADICAL AND THERMAL PROCESSING OF SUBSTRATES 有权
公开(公告)号：US20210280418A1
公开(公告)日：2021-09-09
申请号：US17123386
申请日：2020-12-16
申请人： Applied Materials, Inc.
发明人： Xinming ZHANG , Abhilash J. MAYUR , Shashank SHARMA , Norman L. TAM , Matthew SPULLER , Zeqiong ZHAO
IPC分类号： H01L21/02 , H01L27/11556
摘要： The present disclosure provides systems and methods for processing channel structures of substrates that include positioning the substrate in a first processing chamber having a first processing volume being in fluid communication with a plasma source. The substrate can include a channel structure with high aspect ratio features having aspect ratios greater than about 20:1. The method can also include forming an oxide cap layer over a silicon-containing layer of the channel structure and exposing the oxide cap layer to a hydrogen-or-deuterium radical to nucleate the silicon-containing layer of the channel structures of the substrate. Forming the oxide cap layer and exposing the channel structure with the hydrogen radical occurs in the first processing chamber to form a nucleated substrate. The method can also include positioning the nucleated substrate in a second processing chamber with a second processing volume and heating the nucleated substrate in the second processing chamber.

2. 发明申请

US20180315639A1 SUPPORT RING WITH MASKED EDGE 审中-公开
公开(公告)号：US20180315639A1
公开(公告)日：2018-11-01
申请号：US16029159
申请日：2018-07-06
申请人： Applied Materials, Inc.
发明人： Mehran BEHDJAT , Norman L. TAM , Aaron Muir HUNTER , Joseph M. RANISH , Koji NAKANISHI , Toshiyuki NAKAGAWA
IPC分类号： H01L21/687 , H01L21/67 , C23C16/50
CPC分类号： H01L21/68757 , C23C16/50 , H01L21/67115 , H01L21/68735 , H01L2221/683
摘要： A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

3. 发明申请

US20150155190A1 APPARATUS FOR REDUCING THE EFFECT OF CONTAMINATION ON A RAPID THERMAL PROCESS 有权
标题翻译：减少污染对快速热过程的影响的装置
公开(公告)号：US20150155190A1
公开(公告)日：2015-06-04
申请号：US14550781
申请日：2014-11-21
申请人： Applied Materials, Inc.
发明人： Aaron MILLER , Mehran BEHDJAT , Norman L. TAM , Michael LIU
IPC分类号： H01L21/67 , H01L21/66 , H01L21/324
CPC分类号： H01L21/67115 , H01L21/67248 , H01L21/68792
摘要： Embodiments of the present disclosure provide a cover assembly that includes a cover disposed between a device side surface of a substrate and a reflector plate, which are disposed within a thermal processing chamber. The presence of the cover between the device side surface of a substrate and a reflector plate has many advantages over conventional thermal processing chamber designs, which include an improved temperature uniformity during processing, a reduced chamber down time and an improved cost-of-ownership of the processes performed in the thermal processing chamber. In some configurations, the cover includes two or more ports that are formed therein and are positioned to deliver a gas, from a space formed between the reflector plate and the cover, to desired regions of the substrate during processing to reduce the temperature variation across the substrate.
摘要翻译：本公开的实施例提供一种盖组件，其包括设置在基板的装置侧表面和反射板之间的盖，所述盖设置在热处理室内。衬底的器件侧表面与反射板之间的存在与常规热处理室设计相比具有许多优点，其包括在处理期间改进的温度均匀性，减少的室停机时间和改进的拥有成本在热处理室中进行的处理。在一些构造中，盖包括形成在其中的两个或更多个端口，并且被定位成在处理期间将气体从形成在反射板和盖之间的空间传送到基板的期望区域，以减少横跨基质。

4. 发明申请

US20140079376A1 THERMAL REACTOR WITH IMPROVED GAS FLOW DISTRIBUTION 有权
标题翻译：具有改善气体流量分布的热反应器
公开(公告)号：US20140079376A1
公开(公告)日：2014-03-20
申请号：US14088013
申请日：2013-11-22
申请人： Applied Materials, Inc.
发明人： Ming-Kuei (Michael) TSENG , Norman L. TAM , Yoshitaka YOKOTA , Agus S. TJANDRA , Robert NAVASCA , Mehran BEHDJAT , Sundar RAMAMURTHY , Kedarnath SANGAM , Alexander N. LERNER
IPC分类号： H01L21/67 , F27D7/06
CPC分类号： H01L21/67115 , F27D7/06 , H01L21/67017 , H01L21/67098
摘要： Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.
摘要翻译：本发明的实施例提供了用于改善热处理期间气体分布的装置和方法。本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件构造成支撑和旋转衬底;气体入口组件，室主体的入口并且被配置为向处理容积提供第一气流，以及联接到室主体的出口的排气组件，其中气体入口组件和排气组件设置在室主体的相对侧上，并且排气组件限定了被配置为延长处理量的排气量。

5. 发明申请

US20220108914A1 Treatment methods for titanium nitride films 有权
公开(公告)号：US20220108914A1
公开(公告)日：2022-04-07
申请号：US17398899
申请日：2021-08-10
申请人： Applied Materials, Inc.
发明人： Xinming ZHANG , Shashank SHARMA , Abhilash J. MAYUR , Norman L. TAM , Matthew SPULLER
IPC分类号： H01L21/768 , H01L27/108
摘要： Embodiments herein are directed to methods of forming titanium nitride films suitable for use as a bulk fill material for conductive features in a semiconductor device, such as for capacitor electrodes and/or buried word lines in a dynamic random-access memory (DRAM) device. In one embodiment, a method of forming conductive features in a semiconductor device is provided. The method includes thermally treating a substrate surface comprising at least portions of a titanium nitride layer in the presence of hydrogen radicals. Thermally treating the substrate includes positioning the substrate in a processing volume of a processing chamber, heating the substrate to a treatment temperature of more than about 250° C., generating the hydrogen radicals using a remote plasma source fluidly coupled to the processing volume, and maintaining the substrate at the treatment temperature while concurrently exposing the at least portions of the titanium nitride layer to the generated hydrogen radicals. Here, the substrate includes a field surface having a plurality of openings formed therein and the at least portions of the titanium nitride layer are disposed in the plurality of openings.

6. 发明申请

US20180337075A1 THERMAL CHAMBER WITH IMPROVED THERMAL UNIFORMITY 审中-公开
公开(公告)号：US20180337075A1
公开(公告)日：2018-11-22
申请号：US15982785
申请日：2018-05-17
申请人： Applied Materials, Inc.
发明人： Dongming IU , Kartik SHAH , Norman L. TAM , Matthew SPULLER , Jau-Jiun CHEN , Kong Lung Samuel CHAN , Elizabeth NEVILLE , Preetham RAO , Abhilash J. MAYUR , Gia Pham
IPC分类号： H01L21/67 , C23C16/56 , C23C16/458 , C23C16/455
摘要： Embodiments of the disclosure generally relate to a semiconductor processing chamber. In one embodiment, semiconductor processing chamber is disclosed and includes a chamber body having a bottom and a sidewall defining an interior volume, the sidewall having a substrate transfer port formed therein, and one or more absorber bodies positioned in the interior volume in a position opposite of the substrate transfer port.

7. 发明申请

US20170345693A1 VISUAL FEEDBACK FOR PROCESS CONTROL IN RTP CHAMBERS 审中-公开
公开(公告)号：US20170345693A1
公开(公告)日：2017-11-30
申请号：US15675825
申请日：2017-08-14
申请人： Applied Materials, Inc.
发明人： Kim VELLORE , Dinesh KANAWADE , Stephen MOFFATT , Aaron MILLER , Leonid M. TERTITSKI , Norman L. TAM , Michael LIU , Colin FOX
IPC分类号： H01L21/67
CPC分类号： H01L21/67248 , H01L21/67115
摘要： Embodiments of the present disclosure generally relate to methods and apparatus for visual lamp failure detection in a processing chamber, such as an RTP chamber. Visual feedback is facilitated through the use of a wide-angle lens positioned to view lamps within the process chamber. The wide-angle lens is positioned within a probe and secured using a spring in order to withstand high temperature processing. A camera coupled to the lens is adapted to capture an image of the lamps within the process chamber. The captured image of the lamps is then compared to a reference image to determine if the lamps are functioning as desired.

8. 发明申请

US20140057455A1 METHOD OF IMPROVING OXIDE GROWTH RATE OF SELECTIVE OXIDATION PROCESSES 有权
标题翻译：改善选择性氧化过程氧化生长速率的方法
公开(公告)号：US20140057455A1
公开(公告)日：2014-02-27
申请号：US14043505
申请日：2013-10-01
申请人： APPLIED MATERIALS, INC.
发明人： Yoshitaka YOKOTA , Norman L. TAM , Balasubramanian RAMACHANDRAN , Martin John RIPLEY
IPC分类号： H01L21/02
CPC分类号： H01L21/02238 , H01L21/0223 , H01L21/02255 , H01L21/28247 , H01L21/31662 , H01L21/32
摘要： A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.
摘要翻译：公开并要求保护半导体器件中含硅材料的选择性氧化的方法。一方面，快速热处理装置用于通过在富氢气氛中高压下原位蒸汽产生来选择性氧化基板。衬底中的其它材料，例如金属和阻挡层，不被氧化。

9. 发明申请

US20230128128A1 METHODS, SYSTEMS, AND APPARATUS FOR CONDUCTING A RADICAL TREATMENT OPERATION PRIOR TO CONDUCTING AN ANNEALING OPERATION 有权
公开(公告)号：US20230128128A1
公开(公告)日：2023-04-27
申请号：US17569238
申请日：2022-01-05
申请人： Applied Materials, Inc.
发明人： Pradeep SAMPATH KUMAR , Norman L. TAM , Dongming IU , Shashank SHARMA , Eric R. RIESKE , Michael P. KAMP
IPC分类号： H01L21/324 , H01L21/67 , H01L21/321
摘要： Aspects of the present disclosure relate to methods, systems, and apparatus for conducting a radical treatment operation on a substrate prior to conducting an annealing operation on the substrate. In one implementation, a method of processing semiconductor substrates includes pre-heating a substrate, and exposing the substrate to species radicals. The exposing of the substrate to the species radicals includes a treatment temperature that is less than 300 degrees Celsius, a treatment pressure that is less than 1.0 Torr, and a treatment time that is within a range of 8.0 minutes to 12.0 minutes. The method includes annealing the substrate after the exposing of the substrate to the species radicals. The annealing includes exposing the substrate to molecules, an anneal temperature that is 300 degrees Celsius or greater, an anneal pressure that is within a range of 500 Torr to 550 Torr, and an anneal time that is less than 4.0 minutes.

10. 发明申请

US20180340832A1 THERMAL PROCESSING CHAMBER WITH LOW TEMPERATURE CONTROL 审中-公开
公开(公告)号：US20180340832A1
公开(公告)日：2018-11-29
申请号：US15663037
申请日：2017-07-28
申请人： Applied Materials, Inc.
发明人： Lara HAWRYLCHAK , Samuel C. HOWELLS , Wolfgang R. ADERHOLD , Leonid M. TERTITSKI , Michael LIU , Dongming IU , Norman L. TAM , Ji-Dih HU
IPC分类号： G01J5/00 , H01L21/324 , G05D23/19 , H01L21/66 , H05B1/02
CPC分类号： G01J5/0007 , G01J5/602 , G01J2005/0051 , G05D23/1931 , H01L21/324 , H01L21/67109 , H01L21/67115 , H01L21/68735 , H01L22/10 , H01L22/12 , H01L22/20 , H05B1/0233 , H05B3/0047
摘要： Examples described herein generally relate to apparatus and methods for rapid thermal processing (RTP) of a substrate. In one example, a process chamber includes chamber body, a window disposed on a first portion of the chamber body, a chamber bottom, and a shield disposed on a second portion of the chamber body. The shield has a flat surface facing the window to reduce reflected radiant energy to a back side of a substrate disposed in the process chamber during operation. The process chamber further includes an edge support for supporting the substrate and a cooling member disposed on the chamber bottom. The cooling member is disposed in proximity of the edge support to cool the edge support during low temperature operation in order to improve the temperature uniformity of the substrate.

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