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1. 发明申请

US20200266068A1 METHODS AND APPARATUS FOR METAL SILICIDE DEPOSITION 审中-公开
公开(公告)号：US20200266068A1
公开(公告)日：2020-08-20
申请号：US16784460
申请日：2020-02-07
申请人： Applied Materials, Inc.
发明人： Xuebin LI , Wei LIU , Gaurav THAREJA , Shashank SHARMA , Patricia M. LIU , Schubert CHU
IPC分类号： H01L21/285 , H01L21/768 , H01L21/02 , H01L29/40 , H01L21/67
摘要： Methods and apparatuses for processing substrates, such as during metal silicide applications, are provided. In one or more embodiments, a method of processing a substrate includes depositing an epitaxial layer on the substrate, depositing a metal silicide seed layer on the epitaxial layer, and exposing the metal silicide seed layer to a nitridation process to produce a metal silicide nitride layer from at least a portion of the metal silicide seed layer. The method also includes depositing a metal silicide bulk layer on the metal silicide nitride layer and forming or depositing a nitride capping layer on the metal silicide bulk layer, where the nitride capping layer contains a metal nitride, a silicon nitride, a metal silicide nitride, or a combination thereof.

2. 发明申请

US20170032865A1 ROTATING SUBSTRATE LASER ANNEAL 审中-公开
标题翻译：旋转底片激光天线
公开(公告)号：US20170032865A1
公开(公告)日：2017-02-02
申请号：US15213844
申请日：2016-07-19
申请人： Applied Materials, Inc.
发明人： Joseph M. RANISH , Shashank SHARMA , Diwakar N. KEDLAYA , Aaron Muir HUNTER
IPC分类号： G21K5/10
CPC分类号： G21K5/10 , H01L21/67115
摘要： Embodiments of the present disclosure relate to thermal processing of substrates. More specifically, embodiments described herein relate to flash on spike annealing processes and apparatus suitable for performing such processes. In one embodiment, a thermal processing apparatus may include a lamp radiation source, a laser source, and a reflector plate disposed between the lamp radiation source and the laser source. One or more apertures may be formed in the reflector plate and the laser source may be positioned adjacent to the reflector plate such that a laser beam emitted from the laser source propagates through the one or more apertures. In one embodiment, the reflector plate may be substantially circular and the one or more apertures may approximate a sector of the reflector plate.
摘要翻译：本公开的实施例涉及基板的热处理。更具体地说，本文描述的实施例涉及闪光退火工艺和适于执行这些工艺的装置。在一个实施例中，热处理设备可以包括灯辐射源，激光源和设置在灯辐射源和激光源之间的反射板。可以在反射板中形成一个或多个孔，并且激光源可以邻近反射板定位，使得从激光源发射的激光束传播通过一个或多个孔。在一个实施例中，反射板可以是基本上圆形的并且一个或多个孔可以接近反射板的扇形。

3. 发明申请

US20220005705A1 METHODS AND APPARATUS FOR METAL SILICIDE DEPOSITION 有权
公开(公告)号：US20220005705A1
公开(公告)日：2022-01-06
申请号：US17477808
申请日：2021-09-17
申请人： Applied Materials, Inc.
发明人： Xuebin LI , Wei LIU , Gaurav THAREJA , Shashank SHARMA , Patricia M. LIU , Schubert CHU
IPC分类号： H01L21/321 , H01L21/285 , H01L21/768 , H01L21/67 , H01L29/40 , H01L21/02 , H01L23/532 , H01L21/8234 , H01L21/3205 , H01L29/417
摘要： Methods and apparatuses for processing substrates, such as during metal silicide applications, are provided. In one or more embodiments, a method of processing a substrate includes depositing an epitaxial layer on the substrate, depositing a metal silicide seed layer on the epitaxial layer, and exposing the metal silicide seed layer to a nitridation process to produce a metal silicide nitride layer from at least a portion of the metal silicide seed layer. The method also includes depositing a metal silicide bulk layer on the metal silicide nitride layer and forming or depositing a nitride capping layer on the metal silicide bulk layer, where the nitride capping layer contains a metal nitride, a silicon nitride, a metal silicide nitride, or a combination thereof.

4. 发明申请

US20210280418A1 SYSTEM AND METHOD FOR RADICAL AND THERMAL PROCESSING OF SUBSTRATES 有权
公开(公告)号：US20210280418A1
公开(公告)日：2021-09-09
申请号：US17123386
申请日：2020-12-16
申请人： Applied Materials, Inc.
发明人： Xinming ZHANG , Abhilash J. MAYUR , Shashank SHARMA , Norman L. TAM , Matthew SPULLER , Zeqiong ZHAO
IPC分类号： H01L21/02 , H01L27/11556
摘要： The present disclosure provides systems and methods for processing channel structures of substrates that include positioning the substrate in a first processing chamber having a first processing volume being in fluid communication with a plasma source. The substrate can include a channel structure with high aspect ratio features having aspect ratios greater than about 20:1. The method can also include forming an oxide cap layer over a silicon-containing layer of the channel structure and exposing the oxide cap layer to a hydrogen-or-deuterium radical to nucleate the silicon-containing layer of the channel structures of the substrate. Forming the oxide cap layer and exposing the channel structure with the hydrogen radical occurs in the first processing chamber to form a nucleated substrate. The method can also include positioning the nucleated substrate in a second processing chamber with a second processing volume and heating the nucleated substrate in the second processing chamber.

5. 发明申请

US20170365512A1 HYDROGENATION AND NITRIDIZATION PROCESSES FOR REDUCING OXYGEN CONTENT IN A FILM 审中-公开
公开(公告)号：US20170365512A1
公开(公告)日：2017-12-21
申请号：US15438490
申请日：2017-02-21
申请人： Applied Materials, Inc.
发明人： Johanes S. SWENBERG , Wei LIU , Houda GRAOUI , Shashank SHARMA , Shankar MUTHUKRISHNAN , Rene GEORGE
IPC分类号： H01L21/768 , H01L21/285
CPC分类号： H01L21/76856 , H01L21/28556 , H01L21/28568 , H01L21/7685 , H01L21/76889
摘要： Embodiments described herein generally relate to a sequential hydrogenation and nitridization process for reducing interfacial and bulk O atoms in a conductive structure in a semiconductor device. A hydrogenation and plasma nitridization process is performed on a metal nitride layer in a conductive structure prior to deposition of a second metal layer, thereby reducing interfacial oxygen atoms formed on a surface of the metal nitride and oxygen atoms present in the bulk metal layers of the conductive structure. As a result, adhesion of the second metal layer to the metal nitride layer is improved and the electrical resistance of the contact structure is reduced.

6. 发明申请

US20230127138A1 PLASMA PROCESSING WITH TUNABLE NITRIDATION 有权
公开(公告)号：US20230127138A1
公开(公告)日：2023-04-27
申请号：US17892968
申请日：2022-08-22
申请人： Applied Materials, Inc.
发明人： Wei LIU , Shashank SHARMA , Matthew SPULLER , Vladimir NAGORNY
IPC分类号： C23C8/36 , H01J37/32 , H01L21/02 , C23C8/24
摘要： In an embodiment, a method for nitriding a substrate is provided. The method includes flowing a nitrogen-containing source and a carrier gas into a plasma processing source coupled to a chamber such that a flow rate of the nitrogen-containing source is from about 3% to 20% of a flow rate of the carrier gas; generating an inductively-coupled plasma (ICP) in the plasma processing source by operating an ICP source, the ICP comprising a radical species formed from the nitrogen-containing source, the carrier gas, or both; and nitriding the substrate within the chamber, wherein nitriding includes operating a heat source within the chamber at a temperature from about 150° C. to about 650° C. to heat the substrate; maintaining a pressure of the chamber from about 50 mTorr to about 2 Torr; introducing the ICP to the chamber; and adjusting a characteristic of the substrate by exposing the substrate to the radical species.

7. 发明申请

US20220108914A1 Treatment methods for titanium nitride films 有权
公开(公告)号：US20220108914A1
公开(公告)日：2022-04-07
申请号：US17398899
申请日：2021-08-10
申请人： Applied Materials, Inc.
发明人： Xinming ZHANG , Shashank SHARMA , Abhilash J. MAYUR , Norman L. TAM , Matthew SPULLER
IPC分类号： H01L21/768 , H01L27/108
摘要： Embodiments herein are directed to methods of forming titanium nitride films suitable for use as a bulk fill material for conductive features in a semiconductor device, such as for capacitor electrodes and/or buried word lines in a dynamic random-access memory (DRAM) device. In one embodiment, a method of forming conductive features in a semiconductor device is provided. The method includes thermally treating a substrate surface comprising at least portions of a titanium nitride layer in the presence of hydrogen radicals. Thermally treating the substrate includes positioning the substrate in a processing volume of a processing chamber, heating the substrate to a treatment temperature of more than about 250° C., generating the hydrogen radicals using a remote plasma source fluidly coupled to the processing volume, and maintaining the substrate at the treatment temperature while concurrently exposing the at least portions of the titanium nitride layer to the generated hydrogen radicals. Here, the substrate includes a field surface having a plurality of openings formed therein and the at least portions of the titanium nitride layer are disposed in the plurality of openings.

8. 发明申请

US20220005704A1 METHODS AND APPARATUS FOR METAL SILICIDE DEPOSITION 有权
公开(公告)号：US20220005704A1
公开(公告)日：2022-01-06
申请号：US17477741
申请日：2021-09-17
申请人： Applied Materials, Inc.
发明人： Xuebin LI , Wei LIU , Gaurav THAREJA , Shashank SHARMA , Patricia M. LIU , Schubert CHU
IPC分类号： H01L21/321 , H01L21/285 , H01L21/768 , H01L21/67 , H01L29/40 , H01L21/02 , H01L23/532 , H01L21/8234 , H01L21/3205 , H01L29/417
摘要： Methods and apparatuses for processing substrates, such as during metal silicide applications, are provided. In one or more embodiments, a method of processing a substrate includes depositing an epitaxial layer on the substrate, depositing a metal silicide seed layer on the epitaxial layer, and exposing the metal silicide seed layer to a nitridation process to produce a metal silicide nitride layer from at least a portion of the metal silicide seed layer. The method also includes depositing a metal silicide bulk layer on the metal silicide nitride layer and forming or depositing a nitride capping layer on the metal silicide bulk layer, where the nitride capping layer contains a metal nitride, a silicon nitride, a metal silicide nitride, or a combination thereof.

9. 发明申请

US20210280428A1 SYSTEM AND METHOD FOR RADICAL AND THERMAL PROCESSING OF SUBSTRATES 有权
公开(公告)号：US20210280428A1
公开(公告)日：2021-09-09
申请号：US17174395
申请日：2021-02-12
申请人： Applied Materials, Inc.
发明人： Xinming ZHANG , Abhilash J. MAYUR , Shashank SHARMA , Norman L. TAM , Matthew SPULLER
IPC分类号： H01L21/30 , H01L21/02
摘要： The present disclosure provides systems and methods for processing channel structures of substrates that include positioning the substrate in a first processing chamber having a first processing volume. The substrate includes a channel structure with high aspect ratio features having aspect ratios greater than about 20:1. The method includes forming a silicon-containing layer over the channel structure to a hydrogen-or-deuterium plasma in the first processing volume at a flow rate of about 10 sccm to about 5000 sccm. The substrate is maintained at a temperature of about 100° C. to about 1100° C. during the exposing, the exposing forming a nucleated substrate. Subsequent to the exposing a thermal anneal operation is performed on the substrate.

10. 发明申请

US20200381248A1 METHODS OF POST TREATING DIELECTRIC FILMS WITH MICROWAVE RADIATION 审中-公开
公开(公告)号：US20200381248A1
公开(公告)日：2020-12-03
申请号：US16817007
申请日：2020-03-12
申请人： Applied Materials, Inc.
发明人： Yong SUN , Praket Prakash JHA , Jingmei LIANG , Martin Jay SEAMONS , DongQing LI , Shashank SHARMA , Abhilash J. MAYUR , Wolfgang R. ADERHOLD
IPC分类号： H01L21/02 , C23C16/455 , C23C16/50 , C23C16/30
摘要： A method of post-treating a dielectric film formed on a surface of a substrate includes positioning a substrate having a dielectric film formed thereon in a processing chamber and exposing the dielectric film to microwave radiation in the processing chamber at a frequency between 5 GHz and 7 GHz.

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