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1. 发明授权

US10727400B2 Magnetic random access memory with perpendicular enhancement layer 有权
公开(公告)号：US10727400B2
公开(公告)日：2020-07-28
申请号：US16112323
申请日：2018-08-24
申请人： Avalanche Technology, Inc.
发明人： Zihui Wang , Yiming Huai , Huadong Gan , Yuchen Zhou
IPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , H01L43/02 , H01L43/10 , H01F10/32 , H01F41/30 , H01L27/22 , H01L29/66 , B82Y40/00
摘要： The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; a non-magnetic metal layer formed adjacent to the magnetic free layer structure; an oxide layer formed adjacent to the non-magnetic metal layer; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure opposite the non-magnetic metal layer; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer separated from the first magnetic reference layer by a perpendicular enhancement layer; an antiferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the antiferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer structure has a second invariable magnetization direction substantially opposite to the first invariable magnetization direction.

2. 发明授权

US10438997B2 Multilayered seed structure for magnetic memory element including a CoFeB seed layer 有权
公开(公告)号：US10438997B2
公开(公告)日：2019-10-08
申请号：US16287987
申请日：2019-02-27
申请人： Avalanche Technology, Inc.
发明人： Zihui Wang , Yiming Huai
IPC分类号： H01L27/22 , H01L43/10 , H01L43/02 , H01L43/08 , G11C11/16
摘要： The present invention is directed to a magnetic structure including a first seed layer, which is made of a first transition metal, formed on top of a second seed layer comprising cobalt, iron, and boron; and a magnetic fixed layer structure formed on top of the first seed layer and having a first invariable magnetization direction substantially perpendicular to a layer plane thereof. The magnetic fixed layer structure includes layers of a first magnetic material interleaved with layers of a second transition metal. The first transition metal may be chromium or iridium. The second transition metal may be nickel, platinum, palladium, or iridium. The second seed layer which comprises cobalt, iron, and boron, may have a noncrystalline structure. Moreover, the second seed layer may be non-magnetic or superparamagnetic. The magnetic structure may further includes a third seed layer, which may comprise tantalum, formed adjacent to the second seed layer opposite the first seed layer.

3. 发明授权

US10032979B2 Magnetic memory element with iridium anti-ferromagnetic coupling layer 有权
公开(公告)号：US10032979B2
公开(公告)日：2018-07-24
申请号：US15816160
申请日：2017-11-17
申请人： Avalanche Technology, Inc.
发明人： Huadong Gan , Yiming Huai , Yuchen Zhou , Zihui Wang , Bing K. Yen , Xiaojie Hao , Pengfa Xu
IPC分类号： H01L43/08 , H01F10/32 , G11C11/16 , H01F41/30 , H01L29/66 , H01L43/10 , H01L27/22 , H01L43/02 , B82Y40/00
摘要： The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer comprising cobalt, iron, and boron formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer comprising cobalt separated from the first magnetic reference layer by a molybdenum layer; an iridium layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the iridium layer. The magnetic free layer structure includes a first and a second magnetic free layers with a perpendicular enhancement layer interposed therebetween. The first and second magnetic reference layers have a first invariable magnetization direction perpendicular to layer planes thereof. The magnetic fixed layer structure has a second invariable magnetization direction opposite to the first invariable magnetization direction.

4. 发明申请

US20180075891A1 Method for Sensing Memory Element Coupled to Selector Device 审中-公开
公开(公告)号：US20180075891A1
公开(公告)日：2018-03-15
申请号：US15264847
申请日：2016-09-14
申请人： Avalanche Technology, Inc.
发明人： Hongxin Yang , Xiaobin Wang , Jing Zhang , Xiaojie Hao , Zihui Wang , Kimihiro Satoh
IPC分类号： G11C11/16 , H01L27/22 , H01L43/02
CPC分类号： G11C11/1673 , G11C11/161 , G11C11/1659 , H01L27/224 , H01L27/2463 , H01L43/02 , H01L43/12
摘要： The present invention is directed to a method for sensing the resistance state of a memory cell that includes an MTJ memory element coupled to a two-terminal selector element in series. The method includes the steps of raising a cell voltage across the memory cell above a threshold voltage for the selector element to become conductive; decreasing the cell voltage to a first sensing voltage and measuring a first sensing current passing through the memory cell, the selector element being nominally conductive irrespective of the resistance state of the MTJ memory element at the first sensing voltage; and further decreasing the cell voltage to a second sensing voltage and measuring a second sensing current, the selector element being nominally conductive if the MTJ memory element is in the low resistance state or nominally insulative if the MTJ memory element is in the high resistance state at the second sensing voltage.

5. 发明申请

US20170236868A1 SPIN-ORBITRONICS DEVICE AND APPLICATIONS THEREOF 有权
公开(公告)号：US20170236868A1
公开(公告)日：2017-08-17
申请号：US15586638
申请日：2017-05-04
申请人： Avalanche Technology, Inc.
发明人： Parviz Keshtbod , Xiaobin Wang , Kimihiro Satoh , Zihui Wang , Huadong Gan
IPC分类号： H01L27/22 , H01L43/08
CPC分类号： H01L27/228 , H01L43/08
摘要： The present invention is directed to a spin-orbitronics device including an array of MTJs with each of the MTJs coupled to a respective one of a plurality of selection transistors; a plurality of transverse polarizing lines with each of the transverse polarizing lines coupled to a row of the MTJs along a first direction; a plurality of word lines with each of the word lines coupled to gates of a row of the selection transistors along a second direction; and a plurality of source lines with each of the source lines coupled to a row of the selection transistors along a direction substantially perpendicular to the second direction. Each MTJ includes a magnetic comparison layer structure having a pseudo-invariable magnetization direction, which is configured to switch between two stable states by passing a comparison current through one of the plurality of transverse polarizing lines formed adjacent to the magnetic comparison layer structure.

6. 发明授权

US09679625B2 Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer 有权
公开(公告)号：US09679625B2
公开(公告)日：2017-06-13
申请号：US14930523
申请日：2015-11-02
申请人： Avalanche Technology, Inc.
发明人： Jing Zhang , Yiming Huai , Rajiv Yadav Ranjan , Yuchen Zhou , Zihui Wang , Xiaojie Hao
IPC分类号： H01L29/82 , G11C11/16 , H01L43/08 , H01L43/02 , H01L43/10
CPC分类号： G11C11/161 , G11C11/16 , G11C11/1675 , H01L43/02 , H01L43/08 , H01L43/10
摘要： An STTMRAM element includes a magnetic tunnel junction (MTJ) having a perpendicular magnetic orientation. The MTJ includes a barrier layer, a free layer formed on top of the barrier layer and having a magnetic orientation that is perpendicular and switchable relative to the magnetic orientation of the fixed layer. The magnetic orientation of the free layer switches when electrical current flows through the STTMRAM element. A switching-enhancing layer (SEL), separated from the free layer by a spacer layer, is formed on top of the free layer and has an in-plane magnetic orientation and generates magneto-static fields onto the free layer, causing the magnetic moments of the outer edges of the free layer to tilt with an in-plane component while minimally disturbing the magnetic moment at the center of the free layer to ease the switching of the free layer and to reduce the threshold voltage/current.

7. 发明申请

US20170162781A1 MAGNETIC RANDOM ACCESS MEMORY HAVING PERPENDICULAR ENHANCEMENT LAYER 有权
公开(公告)号：US20170162781A1
公开(公告)日：2017-06-08
申请号：US15440948
申请日：2017-02-23
申请人： Avalanche Technology, Inc.
发明人： Yuchen Zhou , Zihui Wang , Huadong Gan , Yiming Huai
IPC分类号： H01L43/02 , H01L43/10 , H01F10/32 , H01F10/14 , H01F10/16 , H01L43/08 , H01L27/22
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/161 , H01F10/14 , H01F10/16 , H01F10/3222 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01F41/302 , H01F41/307 , H01L27/222 , H01L27/228 , H01L29/66984 , H01L43/08 , H01L43/10
摘要： The present invention is directed to an STT-MRAM device comprising a plurality of memory elements. Each of the memory elements includes an MTJ structure that comprises a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; a first perpendicular enhancement layer (PEL) formed adjacent to the magnetic free layer structure; a magnetic dead layer formed adjacent to the first PEL; and a magnetic fixed layer exchange coupled to the magnetic reference layer structure through an anti-ferromagnetic coupling layer. The magnetic reference layer structure includes a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated from the first magnetic reference layer by a second PEL. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof.

8. 发明授权

US09647032B2 Spin-orbitronics device and applications thereof 有权
公开(公告)号：US09647032B2
公开(公告)日：2017-05-09
申请号：US14831546
申请日：2015-08-20
申请人： Avalanche Technology, Inc.
发明人： Xiaobin Wang , Parviz Keshtbod , Kimihiro Satoh , Zihui Wang , Huadong Gan
IPC分类号： H01L27/22 , H01L43/08
CPC分类号： H01L27/228 , H01L43/08
摘要： The present invention is directed to a spin-orbitronics device including a magnetic comparison layer structure having a pseudo-invariable magnetization direction; a magnetic free layer structure whose variable magnetization direction can be switched by a switching current passing between the magnetic comparison layer structure and the magnetic free layer structure; an insulating tunnel junction layer interposed between the magnetic comparison layer structure and the magnetic free layer structure; and a non-magnetic transverse polarizing layer formed adjacent to the magnetic comparison layer structure. The pseudo-invariable magnetization direction of the magnetic comparison layer structure may be switched by passing a comparison current through the transverse polarizing layer along a direction that is substantially parallel to a layer plane of the transverse polarizing layer. The pseudo-invariable magnetization direction of the magnetic comparison layer structure is not switched by the switching current. The variable magnetization direction of the magnetic free layer structure is not switched by the comparison current.

9. 发明授权

US09634244B2 Magnetic random access memory with perpendicular interfacial anisotropy 有权
公开(公告)号：US09634244B2
公开(公告)日：2017-04-25
申请号：US15080208
申请日：2016-03-24
申请人： Avalanche Technology, Inc.
发明人： Huadong Gan , Yiming Huai , Zihui Wang , Yuchen Zhou
IPC分类号： H01L43/02 , H01L43/10 , H01F10/32 , G11C11/16 , H01F41/30 , H01L29/66 , H01L43/08 , H01L27/22 , B82Y40/00
CPC分类号： H01L43/10 , B82Y40/00 , G11C11/161 , H01F10/3286 , H01F10/329 , H01F41/302 , H01L27/228 , H01L29/66984 , H01L43/02 , H01L43/08
摘要： The present invention is directed to an MRAM element comprising a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween. The magnetic free layer structure has a variable magnetization direction substantially perpendicular to the layer plane thereof. The magnetic reference layer structure includes a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated from the first magnetic reference layer by a first non-magnetic perpendicular enhancement layer. The first and second magnetic reference layers have a first fixed magnetization direction substantially perpendicular to the layer plane thereof. The second magnetic reference layer has a multilayer structure comprising a first magnetic reference sublayer formed adjacent to the first non-magnetic perpendicular enhancement layer and a second magnetic reference sublayer separated from the first magnetic reference sublayer by an intermediate metallic layer.

10. 发明授权

US09252187B2 Devices and methods for measurement of magnetic characteristics of MRAM wafers using magnetoresistive test strips 有权
标题翻译：使用磁阻测试条测量MRAM晶片的磁特性的装置和方法
公开(公告)号：US09252187B2
公开(公告)日：2016-02-02
申请号：US14195473
申请日：2014-03-03
申请人： Avalanche Technology Inc.
发明人： Zihui Wang , Yuchen Zhou , Yiming Huai
IPC分类号： H01L27/00 , H01L27/22 , H01L21/66 , G11C29/50 , G01R31/26 , G11C11/16
CPC分类号： H01L27/222 , G01R31/2648 , G11C11/16 , G11C29/50008 , G11C2029/5002 , H01L22/34
摘要： Methods for testing magnetoresistance of test devices with layer stacks, such as MTJs, fabricated on a wafer are described. The test devices can be fabricated along with arrays of similarly structured memory cells on a production wafer to allow in-process testing. The test devices with contact pads at opposite ends of the bottom electrode allow resistance across the bottom electrode to be measured as a surrogate for measuring resistance between the top and bottom electrodes. An MTJ test device according to the invention has a measurable magnetoresistance (MR) between the two contact pads that is a function of the magnetic orientation of the free layer and varies with the length and width of the MTJ strip in each test device. The set of test MTJs can include a selected range of lengths to allow the tunnel magnetoresistance (TMR) and resistance area product (RA) to be estimated or predicted.
摘要翻译：描述了在晶片上制造的具有层堆叠（例如MTJ）的测试装置的磁阻测试方法。测试装置可以与生产晶片上的类似结构的存储器单元的阵列一起制造，以允许进行中的测试。具有在底部电极的相对端的接触焊盘的测试装置允许要测量的底部电极的电阻作为用于测量顶部和底部电极之间的电阻的替代。根据本发明的MTJ测试装置在两个接触焊盘之间具有可测量的磁阻（MR），其是自由层的磁性取向的函数，并且随每个测试装置中的MTJ条的长度和宽度而变化。测试MTJ的集合可以包括所选择的长度范围，以允许估计或预测隧道磁阻（TMR）和电阻面积积（RA）。

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