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1. 发明授权

US10727400B2 Magnetic random access memory with perpendicular enhancement layer 有权
公开(公告)号：US10727400B2
公开(公告)日：2020-07-28
申请号：US16112323
申请日：2018-08-24
申请人： Avalanche Technology, Inc.
发明人： Zihui Wang , Yiming Huai , Huadong Gan , Yuchen Zhou
IPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , H01L43/02 , H01L43/10 , H01F10/32 , H01F41/30 , H01L27/22 , H01L29/66 , B82Y40/00
摘要： The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; a non-magnetic metal layer formed adjacent to the magnetic free layer structure; an oxide layer formed adjacent to the non-magnetic metal layer; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure opposite the non-magnetic metal layer; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer separated from the first magnetic reference layer by a perpendicular enhancement layer; an antiferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the antiferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer structure has a second invariable magnetization direction substantially opposite to the first invariable magnetization direction.

2. 发明授权

US10032979B2 Magnetic memory element with iridium anti-ferromagnetic coupling layer 有权
公开(公告)号：US10032979B2
公开(公告)日：2018-07-24
申请号：US15816160
申请日：2017-11-17
申请人： Avalanche Technology, Inc.
发明人： Huadong Gan , Yiming Huai , Yuchen Zhou , Zihui Wang , Bing K. Yen , Xiaojie Hao , Pengfa Xu
IPC分类号： H01L43/08 , H01F10/32 , G11C11/16 , H01F41/30 , H01L29/66 , H01L43/10 , H01L27/22 , H01L43/02 , B82Y40/00
摘要： The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer comprising cobalt, iron, and boron formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer comprising cobalt separated from the first magnetic reference layer by a molybdenum layer; an iridium layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the iridium layer. The magnetic free layer structure includes a first and a second magnetic free layers with a perpendicular enhancement layer interposed therebetween. The first and second magnetic reference layers have a first invariable magnetization direction perpendicular to layer planes thereof. The magnetic fixed layer structure has a second invariable magnetization direction opposite to the first invariable magnetization direction.

3. 发明授权

US09780300B2 Magnetic memory element with composite perpendicular enhancement layer 有权
公开(公告)号：US09780300B2
公开(公告)日：2017-10-03
申请号：US15365371
申请日：2016-11-30
申请人： Avalanche Technology, Inc.
发明人： Yuchen Zhou , Bing K. Yen , Huadong Gan , Yiming Huai
IPC分类号： H01L43/08 , H01L43/02 , H01F10/32 , G11C11/16 , H01F41/30 , H01L29/66 , H01L43/10 , H01L27/22 , B82Y40/00
CPC分类号： H01L43/08 , B82Y40/00 , G11C11/161 , H01F10/3286 , H01F10/329 , H01F41/302 , H01L27/228 , H01L29/66984 , H01L43/02 , H01L43/10
摘要： The present invention is directed to an MTJ memory element comprising a magnetic free layer structure including one or more magnetic free layers that have a variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure including a first magnetic reference layer and a second magnetic reference layer with a perpendicular enhancement layer interposed therebetween, the first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The non-magnetic perpendicular enhancement layer includes a first perpendicular enhancement sublayer formed adjacent to the first magnetic reference layer and a second perpendicular enhancement sublayer formed adjacent to the second magnetic reference layer.

4. 发明授权

US09679625B2 Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer 有权
公开(公告)号：US09679625B2
公开(公告)日：2017-06-13
申请号：US14930523
申请日：2015-11-02
申请人： Avalanche Technology, Inc.
发明人： Jing Zhang , Yiming Huai , Rajiv Yadav Ranjan , Yuchen Zhou , Zihui Wang , Xiaojie Hao
IPC分类号： H01L29/82 , G11C11/16 , H01L43/08 , H01L43/02 , H01L43/10
CPC分类号： G11C11/161 , G11C11/16 , G11C11/1675 , H01L43/02 , H01L43/08 , H01L43/10
摘要： An STTMRAM element includes a magnetic tunnel junction (MTJ) having a perpendicular magnetic orientation. The MTJ includes a barrier layer, a free layer formed on top of the barrier layer and having a magnetic orientation that is perpendicular and switchable relative to the magnetic orientation of the fixed layer. The magnetic orientation of the free layer switches when electrical current flows through the STTMRAM element. A switching-enhancing layer (SEL), separated from the free layer by a spacer layer, is formed on top of the free layer and has an in-plane magnetic orientation and generates magneto-static fields onto the free layer, causing the magnetic moments of the outer edges of the free layer to tilt with an in-plane component while minimally disturbing the magnetic moment at the center of the free layer to ease the switching of the free layer and to reduce the threshold voltage/current.

5. 发明申请

US20170162781A1 MAGNETIC RANDOM ACCESS MEMORY HAVING PERPENDICULAR ENHANCEMENT LAYER 有权
公开(公告)号：US20170162781A1
公开(公告)日：2017-06-08
申请号：US15440948
申请日：2017-02-23
申请人： Avalanche Technology, Inc.
发明人： Yuchen Zhou , Zihui Wang , Huadong Gan , Yiming Huai
IPC分类号： H01L43/02 , H01L43/10 , H01F10/32 , H01F10/14 , H01F10/16 , H01L43/08 , H01L27/22
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/161 , H01F10/14 , H01F10/16 , H01F10/3222 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01F41/302 , H01F41/307 , H01L27/222 , H01L27/228 , H01L29/66984 , H01L43/08 , H01L43/10
摘要： The present invention is directed to an STT-MRAM device comprising a plurality of memory elements. Each of the memory elements includes an MTJ structure that comprises a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; a first perpendicular enhancement layer (PEL) formed adjacent to the magnetic free layer structure; a magnetic dead layer formed adjacent to the first PEL; and a magnetic fixed layer exchange coupled to the magnetic reference layer structure through an anti-ferromagnetic coupling layer. The magnetic reference layer structure includes a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated from the first magnetic reference layer by a second PEL. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof.

6. 发明授权

US09634244B2 Magnetic random access memory with perpendicular interfacial anisotropy 有权
公开(公告)号：US09634244B2
公开(公告)日：2017-04-25
申请号：US15080208
申请日：2016-03-24
申请人： Avalanche Technology, Inc.
发明人： Huadong Gan , Yiming Huai , Zihui Wang , Yuchen Zhou
IPC分类号： H01L43/02 , H01L43/10 , H01F10/32 , G11C11/16 , H01F41/30 , H01L29/66 , H01L43/08 , H01L27/22 , B82Y40/00
CPC分类号： H01L43/10 , B82Y40/00 , G11C11/161 , H01F10/3286 , H01F10/329 , H01F41/302 , H01L27/228 , H01L29/66984 , H01L43/02 , H01L43/08
摘要： The present invention is directed to an MRAM element comprising a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween. The magnetic free layer structure has a variable magnetization direction substantially perpendicular to the layer plane thereof. The magnetic reference layer structure includes a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated from the first magnetic reference layer by a first non-magnetic perpendicular enhancement layer. The first and second magnetic reference layers have a first fixed magnetization direction substantially perpendicular to the layer plane thereof. The second magnetic reference layer has a multilayer structure comprising a first magnetic reference sublayer formed adjacent to the first non-magnetic perpendicular enhancement layer and a second magnetic reference sublayer separated from the first magnetic reference sublayer by an intermediate metallic layer.

7. 发明授权

US09444038B2 Magnetic random access memory with nickel/transition metal multilayered seed structure 有权
标题翻译：具有镍/过渡金属多层种子结构的磁性随机存取存储器
公开(公告)号：US09444038B2
公开(公告)日：2016-09-13
申请号：US14727642
申请日：2015-06-01
申请人： Avalanche Technology, Inc.
发明人： Yiming Huai , Huadong Gan , Bing K. Yen , Roger K. Malmhall , Yuchen Zhou
IPC分类号： H01L29/82 , H01L43/08 , H01L43/02 , H01L43/10 , H01L27/22
CPC分类号： H01L27/226 , G11C11/161 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
摘要： The present invention is directed to a magnetic random access memory element that includes a multilayered seed structure formed by interleaving a first type sublayer and a second type sublayer to form one or more repeats of a unit bilayer structure and a first magnetic layer formed on top of the multilayered seed structure. The unit bilayer structure is made of the first and second type sublayers with at least one of the first and second type sublayers including therein one or more ferromagnetic elements. The multilayered seed structure may be amorphous or non-magnetic or both. The unit bilayer structure may be made of CoFeB and Ta sublayers.
摘要翻译：本发明涉及一种磁性随机存取存储元件，其包括通过交织第一类型子层和第二类型子层而形成的多层种子结构，以形成单元双层结构的一个或多个重复和形成在单元双层结构之上的第一磁性层多层种子结构。单元双层结构由第一和第二类型子层制成，其中第一和第二类型子层中的至少一个包括一个或多个铁磁元件。多层种子结构可以是无定形的或非磁性的或两者。单元双层结构可以由CoFeB和Ta子层制成。

8. 发明授权

US09349427B2 Method for screening arrays of magnetic memories 有权
标题翻译：磁记录阵列的方法
公开(公告)号：US09349427B2
公开(公告)日：2016-05-24
申请号：US13969250
申请日：2013-08-16
申请人： Avalanche Technology Inc.
发明人： Yuchen Zhou , Ebrahim Abedifard , Yiming Huai
IPC分类号： G11C11/16 , H01L43/08 , H01L27/22
CPC分类号： G11C11/16 , G11C11/165 , H01L27/222 , H01L43/08
摘要： A testing method is described that applies a sequence external magnetic fields of varying strength to MRAM cells (such as those with MTJ memory elements) in chips or wafers to selectively screen out cells with low or high thermal stability factor. The coercivity (Hc) is used as a proxy for thermal stability factor (delta). In the various embodiments the sequence, direction and strength of the external magnetic fields is used to determine the high coercivity cells that are not switched by a normal field and the low coercivity cells that are switched by a selected low field. In some embodiment the MRAM's standard internal electric current can be used to switch the cells. Standard circuit-based resistance read operations can be used to determine the response of each cell to these magnetic fields and identify the abnormal high and low coercivity cells.
摘要翻译：描述了一种测试方法，其将具有不同强度的序列外部磁场施加到芯片或晶片中的MRAM单元（例如具有MTJ存储元件的那些），以选择性地筛选具有低或高热稳定性因子的单元。矫顽力（Hc）用作热稳定因子（delta）的代表。在各种实施例中，外部磁场的顺序，方向和强度用于确定不被正常场切换的高矫顽力单元以及通过选定的低场切换的低矫顽力单元。在一些实施例中，MRAM的标准内部电流可用于切换电池。可以使用标准的基于电路的电阻读取操作来确定每个单元对这些磁场的响应并识别异常的高和低矫顽力单元。

9. 发明授权

US09318179B2 Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers 有权
标题翻译：具有垂直磁各向异性多层的自旋转矩磁性随机存取存储器
公开(公告)号：US09318179B2
公开(公告)日：2016-04-19
申请号：US14657608
申请日：2015-03-13
申请人： Avalanche Technology, Inc.
发明人： Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Yuchen Zhou , Roger Klas Malmhall
IPC分类号： G11C11/15 , G11C11/16 , H01L43/08
CPC分类号： H01L43/10 , B82Y40/00 , G11C11/15 , G11C11/16 , G11C11/161 , H01F10/3286 , H01F10/329 , H01F41/302 , H01L27/228 , H01L29/66984 , H01L43/02 , H01L43/08
摘要： A spin-transfer torque magnetic random access memory (STTMRAM) element includes a composite fixed layer formed on top of a substrate and a tunnel layer formed upon the fixed layer and a composite free layer formed upon the tunnel barrier layer. The magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate. The composite layers are made of multiple repeats of a bilayer unit which consists of a non-magnetic insulating layer and magnetic layer with thicknesses adjusted in a range that makes the magnetization having a preferred direction perpendicular to film plane.
摘要翻译：自旋传递转矩磁随机存取存储器（STTMRAM）元件包括形成在衬底上的复合固定层和形成在固定层上的隧道层和形成在隧道势垒层上的复合自由层。复合自由层和固定层中的每一个的磁化方向基本上垂直于衬底的平面。复合层由双层单元的多个重复构成，该双层单元由非磁性绝缘层和厚度调节在使磁化具有与膜平面垂直的优选方向的范围内的磁性层组成。

10. 发明授权

US09252187B2 Devices and methods for measurement of magnetic characteristics of MRAM wafers using magnetoresistive test strips 有权
标题翻译：使用磁阻测试条测量MRAM晶片的磁特性的装置和方法
公开(公告)号：US09252187B2
公开(公告)日：2016-02-02
申请号：US14195473
申请日：2014-03-03
申请人： Avalanche Technology Inc.
发明人： Zihui Wang , Yuchen Zhou , Yiming Huai
IPC分类号： H01L27/00 , H01L27/22 , H01L21/66 , G11C29/50 , G01R31/26 , G11C11/16
CPC分类号： H01L27/222 , G01R31/2648 , G11C11/16 , G11C29/50008 , G11C2029/5002 , H01L22/34
摘要： Methods for testing magnetoresistance of test devices with layer stacks, such as MTJs, fabricated on a wafer are described. The test devices can be fabricated along with arrays of similarly structured memory cells on a production wafer to allow in-process testing. The test devices with contact pads at opposite ends of the bottom electrode allow resistance across the bottom electrode to be measured as a surrogate for measuring resistance between the top and bottom electrodes. An MTJ test device according to the invention has a measurable magnetoresistance (MR) between the two contact pads that is a function of the magnetic orientation of the free layer and varies with the length and width of the MTJ strip in each test device. The set of test MTJs can include a selected range of lengths to allow the tunnel magnetoresistance (TMR) and resistance area product (RA) to be estimated or predicted.
摘要翻译：描述了在晶片上制造的具有层堆叠（例如MTJ）的测试装置的磁阻测试方法。测试装置可以与生产晶片上的类似结构的存储器单元的阵列一起制造，以允许进行中的测试。具有在底部电极的相对端的接触焊盘的测试装置允许要测量的底部电极的电阻作为用于测量顶部和底部电极之间的电阻的替代。根据本发明的MTJ测试装置在两个接触焊盘之间具有可测量的磁阻（MR），其是自由层的磁性取向的函数，并且随每个测试装置中的MTJ条的长度和宽度而变化。测试MTJ的集合可以包括所选择的长度范围，以允许估计或预测隧道磁阻（TMR）和电阻面积积（RA）。

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