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    • 2. 发明授权
    • Evaporation coating apparatus
    • US09945025B2
    • 2018-04-17
    • US14768587
    • 2014-12-29
    • BOE TECHNOLOGY GROUP CO., LTD.
    • Dejiang ZhaoLu WangSeiji Fujino
    • C23C14/24C23C14/26
    • C23C14/243C23C14/26
    • An evaporation coating apparatus comprising a heating unit (3) and a cylindrical member (1) disposed within the heating unit (3), wherein the cylindrical member (1) comprises a hollow sleeve (13) and a barrel (12) disposed at an inner side of the hollow sleeve (13) in a fitting manner; wherein a top end area of the hollow sleeve (13) is provided with a first evaporation hole (131), and an external surface of the hollow sleeve (13) is provided with an internal heater strip (4) connected to a control unit; wherein an external surface of the barrel (12) is provided with a groove (1′) extending along an axial central line of the barrel (12), the groove (1′) is provided with a plurality of compartments (11) arranged at interval space, and each of the compartments (11) is provided with a crucible (2); wherein the crucible (2) comprises a main body (21) which is disposed within the compartment (11) and sealed all around with one side opened, and a cover (22) which is connected to the main body (21) in a fitting manner and provided with a second evaporation hole (221) corresponding to the first evaporation hole (131); and wherein the heating unit (3) has a hollow columnar structure, and an external surface of the heating unit (3) is provided with an external heater strip (5) and a nozzle (31) which is corresponding to the first evaporation hole (131). The evaporation coating apparatus is mainly configured to manufacture large-sized displays and can improve the uniformity of film-forming with organic material on the surface of the substrate.
    • 4. 发明授权
    • Photoelectric sensor and photoelectric touch panel
    • 光电传感器和光电触摸屏
    • US09261726B2
    • 2016-02-16
    • US14143484
    • 2013-12-30
    • BOE Technology Group Co., Ltd.
    • Shiming ShiYunfei LiLu Wang
    • G06F3/041G02F1/1333H01L27/12G09G3/00H01L31/00G06F3/042G02F1/133
    • G02F1/13338G02F2001/13312G06F3/0412G06F3/042G09G3/00G09G2360/144H01L27/1255H01L31/00
    • A photoelectric sensor, comprising: a first thin film transistor (T1) for converting a photo signal into an electrical signal; a second thin film transistor (T2) for performing an integration operation on the electrical signal; a third thin film transistor (T3) for reading the electrical signal; and a first capacitor (C1) for storing an energy of the electrical signal, wherein a drain electrode of the first thin film transistor (T1) is connected to one end of the first capacitor (C1) and a source electrode of the third thin film transistor (T3); a source electrode of the first thin film transistor (T1) is connected to a drain electrode of the second thin film transistor (T2); a gate electrode of the first thin film transistor (T1) is supplied with a bias signal; wherein a gate electrode of the second thin film transistor (T2) is supplied with an integration signal; a source electrode of the second thin film transistor (T2) is connected to a high level end of a power source; the other end of the first capacitor (C1) is connected to a low level end of the power source; and wherein a gate electrode of the third thin film transistor (T3) is supplied with a scan signal; a drain electrode of the third thin film transistor (T3) is configured to output the read electrical signal.
    • 一种光电传感器,包括:用于将光信号转换为电信号的第一薄膜晶体管(T1) 用于对电信号进行积分运算的第二薄膜晶体管(T2); 用于读取电信号的第三薄膜晶体管(T3); 以及用于存储电信号的能量的第一电容器(C1),其中第一薄膜晶体管(T1)的漏电极连接到第一电容器(C1)的一端和第三薄膜的源电极 晶体管(T3); 第一薄膜晶体管(T1)的源电极连接到第二薄膜晶体管(T2)的漏电极; 第一薄膜晶体管(T1)的栅电极被提供偏置信号; 其中所述第二薄膜晶体管(T2)的栅电极被提供积分信号; 第二薄膜晶体管(T2)的源电极连接到电源的高电平端; 第一电容器(C1)的另一端连接到电源的低电平端; 并且其中所述第三薄膜晶体管(T3)的栅电极被提供扫描信号; 第三薄膜晶体管(T3)的漏电极被配置为输出读取的电信号。
    • 6. 发明申请
    • PHOTOELECTRIC SENSOR AND PHOTOELECTRIC TOUCH PANEL
    • 光电传感器和光电触摸板
    • US20140211106A1
    • 2014-07-31
    • US14143484
    • 2013-12-30
    • BOE Technology Group Co., Ltd.
    • Shiming ShiYunfei LiLu Wang
    • G02F1/1333H01L27/12
    • G02F1/13338G02F2001/13312G06F3/0412G06F3/042G09G3/00G09G2360/144H01L27/1255H01L31/00
    • A photoelectric sensor, comprising: a first thin film transistor (T1) for converting a photo signal into an electrical signal; a second thin film transistor (T2) for performing an integration operation on the electrical signal; a third thin film transistor (T3) for reading the electrical signal; and a first capacitor (C1) for storing an energy of the electrical signal, wherein a drain electrode of the first thin film transistor (T1) is connected to one end of the first capacitor (C1) and a source electrode of the third thin film transistor (T3); a source electrode of the first thin film transistor (T1) is connected to a drain electrode of the second thin film transistor (T2); a gate electrode of the first thin film transistor (T1) is supplied with a bias signal; wherein a gate electrode of the second thin film transistor (T2) is supplied with an integration signal; a source electrode of the second thin film transistor (T2) is connected to a high level end of a power source; the other end of the first capacitor (C1) is connected to a low level end of the power source; and wherein a gate electrode of the third thin film transistor (T3) is supplied with a scan signal; a drain electrode of the third thin film transistor (T3) is configured to output the read electrical signal.
    • 一种光电传感器,包括:用于将光信号转换为电信号的第一薄膜晶体管(T1) 用于对电信号进行积分运算的第二薄膜晶体管(T2); 用于读取电信号的第三薄膜晶体管(T3); 以及用于存储电信号的能量的第一电容器(C1),其中第一薄膜晶体管(T1)的漏电极连接到第一电容器(C1)的一端和第三薄膜的源电极 晶体管(T3); 第一薄膜晶体管(T1)的源电极连接到第二薄膜晶体管(T2)的漏电极; 第一薄膜晶体管(T1)的栅电极被提供偏置信号; 其中所述第二薄膜晶体管(T2)的栅电极被提供积分信号; 第二薄膜晶体管(T2)的源电极连接到电源的高电平端; 第一电容器(C1)的另一端连接到电源的低电平端; 并且其中所述第三薄膜晶体管(T3)的栅电极被提供扫描信号; 第三薄膜晶体管(T3)的漏电极被配置为输出读取的电信号。