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    • 5. 发明授权
    • Flexible display substrate and manufacturing method thereof, and flexible display device
    • 灵活的显示基板及其制造方法,以及柔性显示装置
    • US09337212B2
    • 2016-05-10
    • US14408073
    • 2014-04-25
    • BOE TECHNOLOGY GROUP CO., LTD.
    • Liqiang ChenTao GaoWeifeng ZhouXue Mao
    • H01L27/14H01L27/12
    • H01L27/1218H01L27/1222H01L27/1266
    • The present invention provides a flexible display substrate, comprising a flexible base; an ultraviolet reflecting layer disposed on the flexible base and capable of reflecting ultraviolet light and transmitting visible light, comprising a stacked structure consisting of alternate first transparent material layers and second transparent material layers, wherein the numbers of the two kinds of transparent material layers are equal, and are at least two respectively, and the two kinds of transparent material layers also satisfy: 4nd=λ, wherein d is the thickness of any one of the transparent material layers, n is a refractive index of the transparent material layer and λ is the wavelength of ultraviolet light; and a display structure disposed above the ultraviolet reflecting layer. The present invention is applicable to flexible display substrates, particularly flexible array substrates comprising low-temperature polycrystalline silicon thin film transistors.
    • 本发明提供了一种柔性显示基板,包括柔性基座; 紫外线反射层,设置在柔性基底上并能够反射紫外光并透射可见光,包括由交替的第一透明材料层和第二透明材料层组成的层叠结构,其中两种透明材料层的数量相等 ,并且分别为至少两个,并且两种透明材料层还满足:4nd =λ,其中d是透明材料层中的任一个的厚度,n是透明材料层的折射率,λ是 紫外线的波长; 以及设置在紫外线反射层上方的显示结构。 本发明可应用于柔性显示基板,特别是包括低温多晶硅薄膜晶体管的柔性阵列基板。
    • 6. 发明申请
    • METHOD FOR MANUFACTURING LOW-TEMPERATURE POLYSILICON THIN FILM TRANSISTOR AND ARRAY SUBSTRATE
    • 制造低温多晶硅薄膜晶体管和阵列基板的方法
    • US20150294869A1
    • 2015-10-15
    • US14436142
    • 2014-03-31
    • BOE Technology Group Co., Ltd.
    • Xue Mao
    • H01L21/225H01L49/02H01L27/12H01L29/66H01L21/02
    • The present invention discloses a method for manufacturing a low-temperature polysilicon thin film transistor and an array substrate, which is used for simplifying manufacturing process procedures of the thin film transistor. The method includes steps of: forming an a-Si layer on a substrate; forming an impurity film on the a-Si layer, positions of the impurity film corresponding to a source doping layer to be formed and a drain doping layer to be formed respectively; and converting the a-Si layer into a polysilicon layer, and during the conversion from the a-Si layer into the polysilicon layer, ions in the impurity film being implanted into regions in the polysilicon layer contacting with the impurity film to form the source doping layer and the drain doping layer. In particular, an excimer laser annealing process is performed on the a-Si layer and the impurity film, so that the source doping layer is formed in a region corresponding to the source doping layer to be formed, the drain doping layer is formed in a region corresponding to the drain doping layer to be formed and the polysilicon layer is formed in regions except the source doping layer and the drain doping layer.
    • 本发明公开了一种制造低温多晶硅薄膜晶体管和阵列基板的方法,其用于简化薄膜晶体管的制造工艺程序。 该方法包括以下步骤:在衬底上形成a-Si层; 在a-Si层上形成杂质膜,对应于待形成的源极掺杂层的杂质膜的位置和要形成的漏极掺杂层; 并且将a-Si层转化为多晶硅层,并且在从a-Si层转换成多晶硅层的过程中,将杂质膜中的离子注入到与杂质膜接触的多晶硅层中的区域中以形成源掺杂 层和漏极掺杂层。 特别地,对a-Si层和杂质膜进行准分子激光退火处理,使得源极掺杂层形成在与要形成的源极掺杂层对应的区域中,漏极掺杂层形成在 对应于要形成的漏极掺杂层的区域,并且多晶硅层形成在除了源极掺杂层和漏极掺杂层之外的区域中。