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1. 发明申请

US20210104585A1 ORGANIC LIGHT-EMITTING DIODE DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS 有权
公开(公告)号：US20210104585A1
公开(公告)日：2021-04-08
申请号：US16462850
申请日：2018-09-04
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Tao Gao
IPC分类号： H01L27/32 , H01L51/52
摘要： An organic light-emitting diode display substrate, a method of manufacturing the same, and a display apparatus are provided. The organic light-emitting diode display substrate includes: a base substrate; a pixel defining layer on the base substrate and defining a plurality of pixel regions, wherein a first electrode, a second electrode and an organic light-emitting functional layer between the first electrode and the second electrode are disposed in each of at least two adjacent ones of the plurality of pixel regions; and a conducting wire on the pixel defining layer and configured to connect the second electrodes located in the at least two adjacent pixel regions.

2. 发明授权

US10707077B2 Method and device for manufacturing low temperature poly-silicon, and laser assembly 有权
公开(公告)号：US10707077B2
公开(公告)日：2020-07-07
申请号：US16113776
申请日：2018-08-27
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Tao Gao , Weifeng Zhou
IPC分类号： H01L21/02 , B23K26/08 , H01L21/67 , B23K26/354 , B23K103/00 , B23K101/40 , H01L27/12
摘要： A method and device for manufacturing low temperature poly-silicon, and a laser assembly are provided. A method for manufacturing low temperature poly-silicon includes forming an amorphous silicon layer on a substrate; controlling a relative movement of a laser assembly to the substrate in a direction perpendicular to a thickness of the substrate, and controlling a laser beam emitted from the laser assembly to irradiate the amorphous silicon layer on the substrate, to recrystallize an amorphous silicon in a region to be irradiated with the laser beam in the amorphous silicon layer. In a direction of the substrate moving relative to the laser assembly, energy of the laser beam emitted by the laser assembly in a same period of time decreases gradually.

3. 发明申请

US20190304782A1 METHOD AND DEVICE FOR MANUFACTURING LOW TEMPERATURE POLY-SILICON, AND LASER ASSEMBLY 审中-公开
公开(公告)号：US20190304782A1
公开(公告)日：2019-10-03
申请号：US16113776
申请日：2018-08-27
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Tao Gao , Weifeng Zhou
IPC分类号： H01L21/02 , H01L21/67 , B23K26/08
摘要： A method and device for manufacturing low temperature poly-silicon, and a laser assembly are provided. A method for manufacturing low temperature poly-silicon includes forming an amorphous silicon layer on a substrate; controlling a relative movement of a laser assembly to the substrate in a direction perpendicular to a thickness of the substrate, and controlling a laser beam emitted from the laser assembly to irradiate the amorphous silicon layer on the substrate, to recrystallize an amorphous silicon in a region to be irradiated with the laser beam in the amorphous silicon layer. In a direction of the substrate moving relative to the laser assembly, energy of the laser beam emitted by the laser assembly in a same period of time decreases gradually.

4. 发明申请

US20160357044A1 Array Substrate And Manufacturing Method For The Same, And Totally Reflective Type Liquid Crystal Display 审中-公开
标题翻译：阵列基板及其制造方法及其全反射型液晶显示器
公开(公告)号：US20160357044A1
公开(公告)日：2016-12-08
申请号：US14891729
申请日：2015-05-22
申请人： BOE Technology Group Co., Ltd.
发明人： Zhijun Lv , Tailiang Li , Tao Gao , Ce Ning , Shuang Sun
IPC分类号： G02F1/1368 , G02F1/1343 , H01L29/417 , H01L29/45 , H01L29/423 , G02F1/1335 , H01L29/49
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/133553 , G02F1/13439 , G02F1/1362 , G02F1/136227 , G02F2201/123 , G02F2203/02 , H01L27/124 , H01L27/1248 , H01L29/41733 , H01L29/42384 , H01L29/458 , H01L29/4908
摘要： The present disclosure discloses an array substrate, comprising a substrate, a plurality of pixel regions on the substrate, and a thin-film transistor formed in each of the pixel regions, each of the pixel regions comprising a pixel electrode region, wherein, the thin-film transistor comprises a gate layer and a source/drain layer formed laminatedly on the substrate; the array substrate further comprises a flat layer and a reflective metal layer formed in sequence on the substrate and covering at least the pixel electrode region and the thin-film transistor; the reflective metal layer is electrically connected to a drain of the thin-film transistor; and at least one of the gate layer and the source/drain layer is formed of a single metal layer. The present disclosure further provides a method for manufacturing the array substrate and a totally reflective type liquid crystal display comprising the array substrate.
摘要翻译：本公开公开了一种阵列基板，包括基板，基板上的多个像素区域和形成在每个像素区域中的薄膜晶体管，每个像素区域包括像素电极区域，其中，薄的薄膜晶体管包括层叠在基板上的栅极层和源极/漏极层; 阵列基板还包括依次形成在基板上并覆盖至少像素电极区域和薄膜晶体管的平坦层和反射金属层; 反射金属层电连接到薄膜晶体管的漏极; 并且栅极层和源极/漏极层中的至少一个由单个金属层形成。本公开还提供了一种用于制造阵列基板的方法和包括阵列基板的全反射型液晶显示器。

5. 发明授权

US09391207B2 Thin film transistor, array substrate and manufacturing method thereof, and display device 有权
标题翻译：薄膜晶体管，阵列基板及其制造方法以及显示装置
公开(公告)号：US09391207B2
公开(公告)日：2016-07-12
申请号：US14422213
申请日：2014-06-12
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Tao Gao , Weifeng Zhou
IPC分类号： H01L21/336 , H01L29/10 , H01L29/786 , H01L29/66 , H01L27/12
CPC分类号： H01L29/786 , H01L27/1222 , H01L27/1255 , H01L27/1288 , H01L29/6675 , H01L29/66757 , H01L29/78675
摘要： The present invention provides a low-temperature polysilicon thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device. The present invention is related to display technology. The low-temperature polysilicon thin film transistor comprises: an active layer disposed on a substrate, and a source electrode and a drain electrode respectively connected to the active layer, the active layer comprises a source contact region, a drain contact region, and a semiconductor region disposed between the source contact region and the drain contact region, the source contact region and the drain contact region are both conductive, both of the source contact region and the drain contact region include a semiconductor substrate and ions distributed in the semiconductor substrate, the source electrode covers the source contact region directly, and the drain electrode covers the drain contact region directly.
摘要翻译：本发明提供一种低温多晶硅薄膜晶体管及其制造方法，阵列基板及其制造方法以及显示装置。本发明涉及显示技术。低温多晶硅薄膜晶体管包括：设置在基板上的有源层和分别连接到有源层的源电极和漏电极，有源层包括源极接触区域，漏极接触区域和半导体设置在源极接触区域和漏极接触区域之间的区域，源极接触区域和漏极接触区域都是导电的，源极接触区域和漏极接触区域都包括半导体衬底和分布在半导体衬底中的离子，源电极直接覆盖源极接触区域，漏电极直接覆盖漏极接触区域。

6. 发明授权

US11563033B2 Flexible array substrate, manufacturing method thereof, flexible display device 有权
公开(公告)号：US11563033B2
公开(公告)日：2023-01-24
申请号：US16905105
申请日：2020-06-18
申请人： CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
发明人： Yuanzheng Guo , Tao Gao
IPC分类号： H01L27/12 , H01L27/32 , H01L51/00
摘要： Embodiments of the present disclosure provide a flexible array substrate, a manufacturing method thereof, and a flexible display device, which relate to the field of display technology, and can reduce the difficulty of wiring, decrease the IR drop, and improve the problem that the wiring is prone to breakage when bent. The flexible array substrate includes a substrate, the substrate including a first sub-substrate and a second sub-substrate which are stacked, the second sub-substrate including at least one via hole; a wiring layer disposed between the first sub-substrate and the second sub-substrate; and a pixel array layer disposed on a side of the second sub-substrate facing away from the first sub-substrate; the wiring layer including a wiring, wherein the pixel array layer is electrically connected to the wiring through the at least one via hole.

7. 发明申请

US20220320227A1 DISPLAY SUBSTRATE, DISPLAY PANEL, AND DISPLAY DEVICE 有权
公开(公告)号：US20220320227A1
公开(公告)日：2022-10-06
申请号：US17310401
申请日：2020-09-30
申请人： CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
发明人： Tao Gao , Peng Huang , Bingqiang Gui , Ke Yang
IPC分类号： H01L27/32
摘要： A display substrate, a display panel, and a display device are provided. The display substrate includes: a base substrate; a first semiconductor layer on the base substrate; and a second semiconductor layer on a side of the first semiconductor layer away from the base substrate. The display substrate further includes a plurality of thin film transistors on the base substrate, which at least include a first transistor, a second transistor and a third transistor. Each of the plurality of thin film transistors includes an active layer. The active layer of at least one of the first transistor and the second transistor is located in the second semiconductor layer and contains an oxide semiconductor material. The active layer of the third transistor is located in the first semiconductor layer and contains a polysilicon semiconductor material. At least one of the first transistor and the second transistor has a dual-gate structure.

8. 发明申请

US20210257392A1 DRIVE BACKPLANE AND DISPLAY PANEL 有权
公开(公告)号：US20210257392A1
公开(公告)日：2021-08-19
申请号：US17026503
申请日：2020-09-21
申请人： Chengdu BOE Optoelectronics Technology Co., Ltd. , BOE TECHNOLOGY GROUP CO., LTD.
发明人： Peng Huang , Tao Gao , Bingqiang Gui , Yucheng Chan
IPC分类号： H01L27/12 , H01L23/60 , H01L29/786
摘要： A drive backplane and a display panel are provided, the drive backplane includes: a substrate; and an oxide thin film transistor arranged on the substrate, wherein the oxide thin film transistor includes: an oxide active layer; a first gate structure disposed on a side of the oxide active layer away from the substrate; and a second gate structure disposed between the oxide active layer and the substrate; wherein at least one of the first gate structure and the second gate structure comprises a plurality of gate electrodes spaced apart along a direction in which the oxide active layer extends.

9. 发明申请

US20210098503A1 ARRAY SUBSTRATE, PREPARATION METHOD THEREOF AND DISPLAY PANEL 有权
公开(公告)号：US20210098503A1
公开(公告)日：2021-04-01
申请号：US17007477
申请日：2020-08-31
申请人： Chengdu BOE Optoelectronics Technology Co., Ltd. , BOE Technology Group Co., Ltd.
发明人： Xiaoqi Ding , Peng Huang , Guoyi Cui , Tao Gao , Li Jia , Zeliang Li , Ke Liu
IPC分类号： H01L27/12
摘要： A method for preparing an array substrate includes: forming first and second active layers, and first and second gate layers above a base substrate; forming first and second via holes for exposing the first active layer and etching the first active layer; forming a first source-drain electrode layer including a first source electrode layer contacting the first active layer through the first via hole and a first drain electrode layer contacting the first active layer through the second via hole; forming third and fourth via holes for exposing the second active layer; forming a second source-drain electrode layer including a second source electrode layer contacting the second active layer through the third via hole and a second drain electrode layer contacting the second active layer through the fourth via hole. The second source/drain electrode layer is electrically connected with the first source-drain electrode layer.

10. 发明授权

US10355032B2 Flexible base substrate and fabrication method thereof 有权
公开(公告)号：US10355032B2
公开(公告)日：2019-07-16
申请号：US14770892
申请日：2015-03-18
申请人： BOE Technology Group Co., Ltd.
发明人： Tao Gao , Xue Mao , Weifeng Zhou
IPC分类号： H01L51/56 , H01L27/12 , B32B27/06 , B32B27/28 , B32B27/36 , B32B37/14 , H01L21/683 , H01L23/13 , H01L23/18
摘要： Embodiments of the present invention provide a flexible base substrate and a fabrication method thereof. The flexible base substrate comprises: a first flexible film layer, having an upper surface and a lower surface opposite to each other, wherein a plurality of concave parts are arranged on the lower surface of the first flexible film layer.

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