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1. 发明授权

US09102579B2 Method for producing fluorinated organic compounds 有权
标题翻译：氟化有机化合物的制备方法
公开(公告)号：US09102579B2
公开(公告)日：2015-08-11
申请号：US11619589
申请日：2007-01-03
申请人： Barbara A. Light , Steven D. Phillips , Kim M. Fleming , Susan A. Ferguson , Jing Ji Ma , Cheryl L. Bortz , Michael Van Der Puy , Daniel C. Merkel , Hsueh S. Tung , Sudip Mukhopadhyay
发明人： Barbara A. Light , Steven D. Phillips , Kim M. Fleming , Susan A. Ferguson , Jing Ji Ma , Cheryl L. Bortz , Michael Van Der Puy , Daniel C. Merkel , Hsueh S. Tung , Sudip Mukhopadhyay
IPC分类号： C07C17/00 , C07C19/08 , C07C21/18 , C07C23/00 , C07C25/13 , C07C17/21 , C07C17/087 , C07C17/10 , C07C17/20 , C07C17/25
CPC分类号： C07C17/23 , C07C17/087 , C07C17/10 , C07C17/206 , C07C17/21 , C07C17/25 , C07C19/08 , C07C19/10 , C07C21/18
摘要： Disclosed is a process for producing fluorinated organic compounds, including hydrofluoropropenes, which preferably comprises converting at least one compound of Formula (I): C(X)3CF2C(X)3 (I) to at least one compound of Formula (II) CF3CF═CHZ (II) where each X and Z is independently H, F, Cl, I or Br, said process preferably not including any substantial amount of oxygen-containing catalyst in certain embodiments. Preferably Z is H.
摘要翻译：公开了一种制备氟化有机化合物的方法，包括氢氟丙烯，其优选包括将至少一种式（I）化合物：C（X）3CF 2 C（X）3（I）转化为至少一种式（II）化合物CF 3 CF ≡CHZ（II）其中每个X和Z独立地为H，F，Cl，I或Br，在某些实施方案中，所述方法优选不包括任何显着量的含氧催化剂。 Z优选为

2. 发明授权

US4822722A Process of using high contrast photoresist developer with enhanced sensitivity to form positive resist image 失效
标题翻译：使用增强灵敏度的高对比度光刻胶显影剂形成正光刻胶图像的方法
公开(公告)号：US4822722A
公开(公告)日：1989-04-18
申请号：US119295
申请日：1987-11-06
申请人： James M. Lewis , Robert A. Owens , Susan A. Ferguson , Roland L. Chin , Valentine T. Zuba
发明人： James M. Lewis , Robert A. Owens , Susan A. Ferguson , Roland L. Chin , Valentine T. Zuba
IPC分类号： G03F7/32 , G03F7/26
CPC分类号： G03F7/322
摘要： High contrast, sensitivity and bath life is obtainable by the addition of inorganic salts, preferably a carbonate, to an aqueous alkali metal base containing a carboxylated surfactant. The preferred alkali metal bases are potassium hydroxide or sodium hydroxide. The carboxylated surfactants contemplated by the invention are those encompassed with the formula:R--O--(CH.sub.2 H.sub.4 O).sub.n --CH.sub.2 --COOXwherein R is a hydrocarbon radical of 6-18 carbon atoms alkyl radical, n has a value of 1-24 and X is a cation such as K.sup.+, Na.sup.+, or H.sup.+. The gain in sensitivity with the incorporation of an inorganic compound furnishing ions, typically an inorganic salt, to the developer with the carboxylated surfactant compared to the sensitivity obtained with developers with carboxylated surfactant and inorganic salts omitted was typically two fold and greater without a corresponding film loss. Examples of salts are those that contain the anions SO.sub.4.sup.2-, CO.sub.3.sup.2-, Cl.sup.-, PO.sub.4.sup.3-, Br.sup.-, NO.sub.3.sup.-, borates or silicates and the cations K.sup.+, Na.sup.+, Ca.sup.2+, Mg.sup.2+, Li.sup.+, or H.sup.+. Additionally, reagents capable of generating these anions and cations in solution are applicable provided that no substantial change in pH of the developer solution results. The extended bath life which is obtainable with the incorporation of the carboxylated surfactant is not adversely affected by the addition of the inorganic salts in the surfactant-containing developer compositions.
摘要翻译：通过向包含羧化表面活性剂的碱金属碱水溶液中添加无机盐，优选碳酸盐，可以获得高对比度，灵敏度和浴寿命。优选的碱金属碱是氢氧化钾或氢氧化钠。本发明考虑的羧化表面活性剂是包含下式的那些：RO-（CH2H4O）n-CH2-COOX，其中R是6-18个碳原子烷基的烃基，n的值是1-24，X是阳离子如K +，Na +或H +。与通过羧化表面活性剂的显影剂提供离子（通常为无机盐）的无机化合物相比，通过省略了具有羧化表面活性剂和无机盐的显影剂获得的灵敏度，灵敏度的增加通常为两倍和更大，而没有相应的膜失利。盐的实例是含有阴离子SO42-，CO32-，Cl-，PO43-，Br-，NO3-，硼酸盐或硅酸盐和阳离子K +，Na +，Ca2 +，Mg2 +，Li +或H +的盐。另外，只要不产生显影剂溶液的pH显着变化，就可以使用能够在溶液中产生这些阴离子和阳离子的试剂。通过加入羧化表面活性剂可获得的延长的浴寿命不受在含表面活性剂的显影剂组合物中加入无机盐的不利影响。

3. 发明授权

US4522886A Method of ion beam synthesis of thin silicon nitride films and resulting articles 失效
标题翻译：薄氮化硅薄膜和所得制品的离子束合成方法
公开(公告)号：US4522886A
公开(公告)日：1985-06-11
申请号：US659147
申请日：1984-10-09
申请人： Roland L. Chin , Susan A. Ferguson
发明人： Roland L. Chin , Susan A. Ferguson
IPC分类号： C04B41/50 , C04B41/87 , H01L21/318 , B32B9/04
CPC分类号： C04B41/009 , C04B41/5066 , C04B41/87 , H01L21/3185 , C04B2111/00844
摘要： A method is disclosed for the synthesis of ultra-thin silicon nitride (Si.sub.x N.sub.y) films by the direct interaction of a low energy noble ion beam (e.g. Ar.sup.+ or He.sup.+), with NH.sub.3 physically absorbed on a silicon surface. The method is directed toward applications which require the use of ultra-thin insulating layers, such as in MIS technology.The disclosed method provides for the synthesis of ultra-thin films of silicon nitride via the interaction of NH.sub.3 absorbed on a silicon substrate and a low energy nobel ion beam. Preferential absorption of NH.sub.3 is effected by cooling of the substrate below the boiling point of NH.sub.3. The ion beam is used to generate reactive N and Si species which combine to form compounds of silicon nitride. The physical appearance of the films formed by this method is comparable to those produced by low pressure chemical vapor deposition.
摘要翻译：公开了通过低能量的高价离子束（例如Ar +或He +）的直接相互作用与物理地吸收在硅表面上的NH 3来合成超薄氮化硅（SixNy）膜的方法。该方法针对需要使用超薄绝缘层的应用，例如在MIS技术中。所公开的方法提供了通过吸收在硅衬底上的NH 3和低能诺贝尔离子束的相互作用来合成氮化硅超薄膜。 NH 3的优先吸收通过将基底冷却至低于NH 3沸点来实现。离子束用于产生结合形成氮化硅化合物的反应性N和Si物质。通过该方法形成的膜的物理外观与由低压化学气相沉积产生的膜相当。

4. 发明授权

US4931380A Pre-exposure method for increased sensitivity in high contrast resist development of positive working diazo ketone photoresist 失效
标题翻译：预曝光方法，用于提高正性工作重氮酮光致抗蚀剂的高对比度抗蚀剂开发中的灵敏度
公开(公告)号：US4931380A
公开(公告)日：1990-06-05
申请号：US274648
申请日：1988-11-18
申请人： Robert A. Owens , Roland L. Chin , Susan A. Ferguson , James M. Lewis
发明人： Robert A. Owens , Roland L. Chin , Susan A. Ferguson , James M. Lewis
IPC分类号： G03F7/20
CPC分类号： G03F7/2022
摘要： A high contrast developing process is described for use after pre-exposure to UV-visible radiation to produce increased sensitivity during lithographic processing of positive resist layers. Compared to samples which have not been subjected to the methods of this invention, sensitivity increases of a factor of 2-4 are to be expected. An additional benefit of low film loss from unexposed resist is obtained. The system disclosed is applicable to lithographic exposures utilizing electrons, photon (e.g. UV-visible, x-rays, etc.) and atomic or molecular charged particles. Specifically, as a result of the increased sensitivity, higher throughput during lithographic processing for the fabrication of photomasks and semiconductor devices is realized.
摘要翻译：描述了高对比度显影方法，用于在预曝光到紫外 - 可见辐射之后，以在正性抗蚀剂层的光刻处理期间产生增加的灵敏度。与未进行本发明方法的样品相比，预期灵敏度提高了2-4倍。获得了未曝光抗蚀剂的低膜损失的另外的益处。所公开的系统适用于利用电子，光子（例如UV-可见光，X射线等）和原子或分子带电粒子的光刻曝光。具体地，作为灵敏度增加的结果，实现了用于制造光掩模和半导体器件的光刻处理期间的更高的通量。

5. 发明授权

US4595649A Glassy TiO.sub.2 polymer films as electron beam charge dissipation layers 失效
标题翻译：玻璃状TiO 2聚合物膜作为电子束电荷耗散层
公开(公告)号：US4595649A
公开(公告)日：1986-06-17
申请号：US703058
申请日：1985-02-19
申请人： Susan A. Ferguson , Roland L. Chin
发明人： Susan A. Ferguson , Roland L. Chin
IPC分类号： G03F7/09 , H01L21/027 , H01L21/316 , G03C5/00
CPC分类号： G03F7/094 , H01L21/0277 , H01L21/316 , Y10S430/143
摘要： The use of TiO.sub.2 spin-on glass films for reduction of electrostatic charging of a semiconductor substrate upon electron beam exposure is described. Specifically, the disclosure relates to electron beam lithographic processing during semiconductor device or mask fabrication. The TiO.sub.2 glass films may also be utilized for charge dissipation during ion implantation. A thin TiO.sub.2 composition spin-on glass film is used as a charge dissipation layer. This mechanism is effective as a resolution enhancement mechanism during electron beam or ion beam processing of semiconductors. The TiO.sub.2 composition films are prepared from spin-on materials that consist of partially hydrolyzed organotitanium species dissolved in organic solvents which produce glassy films of TiO.sub.2 upon application to silicon and other substrates and subsequent heating. The films are completely amorphous, have extremely low pinhole and particulate densities, are uniform in thickness and free of radial striations. These spin-cast films do not exhibit the moisture sensitivity typical of TiO.sub.2 produced from other liquid sources.
摘要翻译：描述了使用TiO 2旋涂玻璃膜以减少电子束暴露时的半导体衬底的静电充电。具体地，本公开涉及半导体器件或掩模制造期间的电子束光刻处理。在离子注入期间，TiO 2玻璃膜也可用于电荷耗散。使用薄的TiO 2组合物旋涂玻璃膜作为电荷耗散层。该机制作为半导体电子束或离子束处理期间的分辨率增强机制是有效的。 TiO 2组合物膜由旋涂材料制备，其由溶解在有机溶剂中的部分水解的有机钛物质制成，其在施加到硅和其它基材上并随后加热时产生TiO 2的玻璃质膜。这些膜是完全无定形的，具有极低的针孔和颗粒密度，厚度均匀且没有径向条纹。这些旋涂膜不表现出由其他液体源产生的TiO 2的湿度敏感性。

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