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1. 发明授权

US08753982B2 Method for producing a connection region on a side wall of a semiconductor body 有权
标题翻译：在半导体主体的侧壁上制造连接区域的方法
公开(公告)号：US08753982B2
公开(公告)日：2014-06-17
申请号：US13468748
申请日：2012-05-10
申请人： Carsten Ahrens , Berthold Schuderer , Stefan Willkofer
发明人： Carsten Ahrens , Berthold Schuderer , Stefan Willkofer
IPC分类号： H01L21/44
CPC分类号： H01L24/03 , H01L24/05 , H01L2224/02371 , H01L2224/05008 , H01L2224/05019 , H01L2224/05027 , H01L2224/05147 , H01L2224/05548 , H01L2224/05562 , H01L2224/05572 , H01L2224/05644 , H01L2224/05655 , H01L2224/94 , H01L2924/00014 , H01L2924/01029 , H01L2924/01015 , H01L2924/01046 , H01L2224/05552 , H01L2224/03
摘要： A method for producing a connection region on a side wall of a semiconductor body is disclosed. A first trench is produced on a first surface of a semiconductor body and extends into the semiconductor body. An insulation layer is formed on the side walls and on the bottom of the first trench, and the first trench is only partially filled. The unfilled part of the first trench is filled with an electrically conductive material. A separating trench is produced along the first trench in such a way that a side wall of the separating trench directly adjoins the first trench. The part of the insulation layer which adjoins the separating trench is at least partially removed, with the result that at least some of the electrically conductive material in the first trench is exposed.
摘要翻译：公开了一种在半导体本体的侧壁上制造连接区域的方法。第一沟槽在半导体本体的第一表面上产生并延伸到半导体本体中。绝缘层形成在第一沟槽的侧壁和底部上，并且第一沟槽仅部分填充。第一沟槽的未填充部分填充有导电材料。沿着第一沟槽产生分离沟槽，使得分离沟槽的侧壁直接邻接第一沟槽。邻接分离沟槽的绝缘层的部分至少部分地被去除，结果是暴露第一沟槽中的至少一些导电材料。

2. 发明申请

US20120289023A1 Method for Producing a Semiconductor Device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120289023A1
公开(公告)日：2012-11-15
申请号：US13365774
申请日：2012-02-03
申请人： Carsten Ahrens , Rudolf Berger , Manfred Frank , Uwe Hoeckele , Bernhard Knott , Ulrich Krumbein , Wolfgang Lehnert , Berthold Schuderer , Juergen Wagner , Stefan Willkofer
发明人： Carsten Ahrens , Rudolf Berger , Manfred Frank , Uwe Hoeckele , Bernhard Knott , Ulrich Krumbein , Wolfgang Lehnert , Berthold Schuderer , Juergen Wagner , Stefan Willkofer
IPC分类号： H01L21/762
CPC分类号： H01L21/76224 , H01L21/762 , H01L21/76232 , H01L21/78 , H01L23/31 , H01L23/3185 , H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： A method for producing a semiconductor device having a sidewall insulation includes providing a semiconductor body having a first side and a second side lying opposite the first side. At least one first trench is at least partly filled with insulation material proceeding from the first side in the direction toward the second side into the semiconductor body. The at least one first trench is produced between a first semiconductor body region for a first semiconductor device and a second semiconductor body region for a second semiconductor device. An isolating trench extends from the first side of the semiconductor body in the direction toward the second side of the semiconductor body between the first and second semiconductor body regions in such a way that at least part of the insulation material of the first trench adjoins at least a sidewall of the isolating trench. The second side of the semiconductor body is partly removed as far as the isolating trench.
摘要翻译：一种制造具有侧壁绝缘体的半导体器件的方法包括提供具有第一侧和与第一侧相对的第二侧的半导体本体。至少一个第一沟槽至少部分地填充有绝缘材料，该绝缘材料从朝向第二侧的方向的第一侧进入半导体本体。在第一半导体器件的第一半导体体区域和第二半导体器件的第二半导体本体区域之间产生至少一个第一沟槽。隔离沟槽从半导体本体的第一侧沿第一和第二半导体主体区域之间的半导体本体的第二侧的方向延伸，使得第一沟槽的绝缘材料的至少一部分至少邻接隔离沟槽的侧壁。半导体主体的第二面部分地被去除到隔离沟槽的一侧。

3. 发明授权

US09236290B2 Method for producing a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US09236290B2
公开(公告)日：2016-01-12
申请号：US13365774
申请日：2012-02-03
申请人： Carsten Ahrens , Rudolf Berger , Manfred Frank , Uwe Hoeckele , Bernhard Knott , Ulrich Krumbein , Wolfgang Lehnert , Berthold Schuderer , Juergen Wagner , Stefan Willkofer
发明人： Carsten Ahrens , Rudolf Berger , Manfred Frank , Uwe Hoeckele , Bernhard Knott , Ulrich Krumbein , Wolfgang Lehnert , Berthold Schuderer , Juergen Wagner , Stefan Willkofer
IPC分类号： H01L21/762 , H01L23/31 , H01L21/78 , H01L23/48
CPC分类号： H01L21/76224 , H01L21/762 , H01L21/76232 , H01L21/78 , H01L23/31 , H01L23/3185 , H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： A method for producing a semiconductor device having a sidewall insulation includes providing a semiconductor body having a first side and a second side lying opposite the first side. At least one first trench is at least partly filled with insulation material proceeding from the first side in the direction toward the second side into the semiconductor body. The at least one first trench is produced between a first semiconductor body region for a first semiconductor device and a second semiconductor body region for a second semiconductor device. An isolating trench extends from the first side of the semiconductor body in the direction toward the second side of the semiconductor body between the first and second semiconductor body regions in such a way that at least part of the insulation material of the first trench adjoins at least a sidewall of the isolating trench. The second side of the semiconductor body is partly removed as far as the isolating trench.
摘要翻译：一种制造具有侧壁绝缘体的半导体器件的方法包括提供具有第一侧和与第一侧相对的第二侧的半导体本体。至少一个第一沟槽至少部分地填充有绝缘材料，该绝缘材料从朝向第二侧的方向的第一侧进入半导体本体。在第一半导体器件的第一半导体体区域和第二半导体器件的第二半导体本体区域之间产生至少一个第一沟槽。隔离沟槽从半导体本体的第一侧沿第一和第二半导体主体区域之间的半导体本体的第二侧的方向延伸，使得第一沟槽的绝缘材料的至少一部分至少与第一沟槽的绝缘材料相邻隔离沟槽的侧壁。半导体主体的第二面部分地被去除到隔离沟槽的一侧。

4. 发明申请

US20120034760A1 Metallization for Chip Scale Packages in Wafer Level Packaging 有权
标题翻译：晶圆级封装芯片尺寸封装的金属化
公开(公告)号：US20120034760A1
公开(公告)日：2012-02-09
申请号：US12851292
申请日：2010-08-05
申请人： Berthold Schuderer , Carsten Ahrens
发明人： Berthold Schuderer , Carsten Ahrens
IPC分类号： H01L21/78
CPC分类号： H01L21/78 , H01L2224/02371
摘要： In one embodiment, a method for forming the semiconductor device includes forming a first trench from a front side of a substrate. The substrate has a front side and an opposite back side, and the first trench having sidewalls and a bottom surface. A insulator layer is formed over the sidewalls and the bottom surface. A first conductive layer is formed over a top portion of the sidewalls of the first trench. The substrate is separated along the first trench.
摘要翻译：在一个实施例中，用于形成半导体器件的方法包括从衬底的前侧形成第一沟槽。衬底具有前侧和相对的后侧，并且第一沟槽具有侧壁和底表面。在侧壁和底表面上形成绝缘体层。第一导电层形成在第一沟槽的侧壁的顶部上方。衬底沿着第一沟槽分离。

5. 发明授权

US08163629B2 Metallization for chip scale packages in wafer level packaging 有权
标题翻译：晶圆级封装中芯片级封装的金属化
公开(公告)号：US08163629B2
公开(公告)日：2012-04-24
申请号：US12851292
申请日：2010-08-05
申请人： Berthold Schuderer , Carsten Ahrens
发明人： Berthold Schuderer , Carsten Ahrens
IPC分类号： H01L21/301
CPC分类号： H01L21/78 , H01L2224/02371
摘要： In one embodiment, a method for forming the semiconductor device includes forming a first trench from a front side of a substrate. The substrate has a front side and an opposite back side, and the first trench having sidewalls and a bottom surface. A insulator layer is formed over the sidewalls and the bottom surface. A first conductive layer is formed over a top portion of the sidewalls of the first trench. The substrate is separated along the first trench.
摘要翻译：在一个实施例中，用于形成半导体器件的方法包括从衬底的前侧形成第一沟槽。衬底具有前侧和相对的后侧，并且第一沟槽具有侧壁和底表面。在侧壁和底表面上形成绝缘体层。第一导电层形成在第一沟槽的侧壁的顶部上方。衬底沿着第一沟槽分离。

6. 发明申请

US20120289047A1 Method for Producing a Connection Region on a Side Wall of a Semiconductor Body 有权
标题翻译：在半导体主体的侧壁上产生连接区域的方法
公开(公告)号：US20120289047A1
公开(公告)日：2012-11-15
申请号：US13468748
申请日：2012-05-10
申请人： Carsten Ahrens , Berthold Schuderer , Stefan Willkofer
发明人： Carsten Ahrens , Berthold Schuderer , Stefan Willkofer
IPC分类号： H01L21/768
CPC分类号： H01L24/03 , H01L24/05 , H01L2224/02371 , H01L2224/05008 , H01L2224/05019 , H01L2224/05027 , H01L2224/05147 , H01L2224/05548 , H01L2224/05562 , H01L2224/05572 , H01L2224/05644 , H01L2224/05655 , H01L2224/94 , H01L2924/00014 , H01L2924/01029 , H01L2924/01015 , H01L2924/01046 , H01L2224/05552 , H01L2224/03
摘要： A method for producing a connection region on a side wall of a semiconductor body is disclosed. A first trench is produced on a first surface of a semiconductor body and extends into the semiconductor body. An insulation layer is formed on the side walls and on the bottom of the first trench, and the first trench is only partially filled. The unfilled part of the first trench is filled with an electrically conductive material. A separating trench is produced along the first trench in such a way that a side wall of the separating trench directly adjoins the first trench. The part of the insulation layer which adjoins the separating trench is at least partially removed, with the result that at least some of the electrically conductive material in the first trench is exposed.
摘要翻译：公开了一种在半导体本体的侧壁上制造连接区域的方法。第一沟槽在半导体本体的第一表面上产生并延伸到半导体本体中。绝缘层形成在第一沟槽的侧壁和底部上，并且第一沟槽仅部分填充。第一沟槽的未填充部分填充有导电材料。沿着第一沟槽产生分离沟槽，使得分离沟槽的侧壁直接邻接第一沟槽。邻接分离沟槽的绝缘层的部分至少部分地被去除，结果是暴露第一沟槽中的至少一些导电材料。

7. 发明授权

US07816791B2 Bonding pad for contacting a device 有权
标题翻译：用于接触设备的接合垫
公开(公告)号：US07816791B2
公开(公告)日：2010-10-19
申请号：US11854296
申请日：2007-09-12
申请人： Carsten Ahrens , Sven Albers , Klaus Gnannt , Ulrich Krumbein , Gunther Mackh , Patrick Schelauske , Berthold Schuderer , Georg Seidemann
发明人： Carsten Ahrens , Sven Albers , Klaus Gnannt , Ulrich Krumbein , Gunther Mackh , Patrick Schelauske , Berthold Schuderer , Georg Seidemann
IPC分类号： H01L23/48 , H01L23/52
CPC分类号： H01L24/05 , H01L24/45 , H01L2224/04042 , H01L2224/05147 , H01L2224/05164 , H01L2224/05556 , H01L2224/05624 , H01L2224/05644 , H01L2224/45144 , H01L2224/48624 , H01L2224/48644 , H01L2924/01005 , H01L2924/01013 , H01L2924/01015 , H01L2924/0102 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/19043 , H01L2924/00014 , H01L2924/00
摘要： A bonding pad on a substrate has a first metal structure establishing an electrical connection between a device and a bonding area, and a second metal structure arranged at the bonding area. The first metal structure extends, within the bonding area, at least over part of the bonding area between the substrate and the second metal structure, so as to contact the second metal structure, the second metal structure being harder than the first metal structure.
摘要翻译：衬底上的接合焊盘具有在器件和接合区域之间建立电连接的第一金属结构和布置在接合区域处的第二金属结构。所述第一金属结构在所述接合区域内延伸所述基板与所述第二金属结构之间的所述接合区域的至少一部分以与所述第二金属结构接触，所述第二金属结构比所述第一金属结构硬。

8. 发明申请

US20080067682A1 Bonding Pad for Contacting a Device 有权
标题翻译：用于接触设备的接合垫
公开(公告)号：US20080067682A1
公开(公告)日：2008-03-20
申请号：US11854296
申请日：2007-09-12
申请人： Carsten Ahrens , Sven Albers , Klaus Gnannt , Ulrich Krumbein , Gunther Mackh , Patrick Schelauske , Berthold Schuderer , Georg Seidemann
发明人： Carsten Ahrens , Sven Albers , Klaus Gnannt , Ulrich Krumbein , Gunther Mackh , Patrick Schelauske , Berthold Schuderer , Georg Seidemann
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L24/05 , H01L24/45 , H01L2224/04042 , H01L2224/05147 , H01L2224/05164 , H01L2224/05556 , H01L2224/05624 , H01L2224/05644 , H01L2224/45144 , H01L2224/48624 , H01L2224/48644 , H01L2924/01005 , H01L2924/01013 , H01L2924/01015 , H01L2924/0102 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/19043 , H01L2924/00014 , H01L2924/00
摘要： A bonding pad on a substrate has a first metal structure establishing an electrical connection between a device and a bonding area, and a second metal structure arranged at the bonding area. The first metal structure extends, within the bonding area, at least over part of the bonding area between the substrate and the second metal structure, so as to contact the second metal structure, the second metal structure being harder than the first metal structure.
摘要翻译：衬底上的接合焊盘具有在器件和接合区域之间建立电连接的第一金属结构和布置在接合区域处的第二金属结构。所述第一金属结构在所述接合区域内延伸所述基板与所述第二金属结构之间的所述接合区域的至少一部分以与所述第二金属结构接触，所述第二金属结构比所述第一金属结构硬。

9. 发明申请

US20140028192A1 Field Emission Devices and Methods of Making Thereof 有权
标题翻译：现场排放装置及其制造方法
公开(公告)号：US20140028192A1
公开(公告)日：2014-01-30
申请号：US13558265
申请日：2012-07-25
申请人： Alfons Dehe , Damian Sojka , Andre Schmenn , Carsten Ahrens
发明人： Alfons Dehe , Damian Sojka , Andre Schmenn , Carsten Ahrens
IPC分类号： H01J19/02 , H01J9/02
CPC分类号： H01L21/76289 , H01L21/764 , H01L23/60 , H01L24/32 , H01L24/48 , H01L24/73 , H01L27/0288 , H01L2224/32245 , H01L2224/45099 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/13091 , H01L2924/181 , H02H9/046 , H01L2924/00 , H01L2924/00012
摘要： In one embodiment of the present invention, an electronic device includes a first emitter/collector region and a second emitter/collector region disposed in a substrate. The first emitter/collector region has a first edge/tip, and the second emitter/collector region has a second edge/tip. A gap separates the first edge/tip from the second edge/tip. The first emitter/collector region, the second emitter/collector region, and the gap form a field emission device.
摘要翻译：在本发明的一个实施例中，电子器件包括设置在衬底中的第一发射极/集电极区域和第二发射极/集电极区域。第一发射极/集电极区域具有第一边缘/尖端，并且第二发射极/集电极区域具有第二边缘/尖端。间隙将第一边缘/尖端与第二边缘/尖端分开。第一发射极/集电极区域，第二发射极/集电极区域和间隙形成场致发射器件。

10. 发明授权

US08531011B2 Protective structure having a semiconductor substrate 有权
标题翻译：具有半导体衬底的保护结构
公开(公告)号：US08531011B2
公开(公告)日：2013-09-10
申请号：US13566039
申请日：2012-08-03
申请人： Andre Schmenn , Damian Sojka , Carsten Ahrens
发明人： Andre Schmenn , Damian Sojka , Carsten Ahrens
IPC分类号： H01L31/075 , H01L31/105 , H01L31/117
CPC分类号： H01L27/0255 , H01L21/22 , H01L21/265 , H01L29/66121 , H01L29/868
摘要： A protective structure is produced by providing a semiconductor substrate having doping of a first conductivity type. A semiconductor layer having doping of a second conductivity type is applied at a surface of the semiconductor substrate. A buried layer with doping of a second conductivity type is formed in a first region of the semiconductor layer, producing a layer at the junction between the semiconductor layer and semiconductor substrate. A first dopant zone having doping of a first conductivity type is formed in the first region of the semiconductor layer above the buried layer. A second dopant zone having doping of a second conductivity type is formed in a second region of the semiconductor layer. An electrical insulation is formed between the first and second regions of the semiconductor layer. A common connection device is formed for the first and second dopant zones.
摘要翻译：通过提供具有第一导电类型的掺杂的半导体衬底来制造保护结构。在半导体衬底的表面上施加具有第二导电类型掺杂的半导体层。在半导体层的第一区域中形成具有第二导电类型的掺杂的掩埋层，在半导体层和半导体衬底之间的接合处产生一层。在掩埋层上方的半导体层的第一区域中形成具有第一导电类型掺杂的第一掺杂区。在半导体层的第二区域中形成具有第二导电类型掺杂的第二掺杂区。在半导体层的第一和第二区域之间形成电绝缘。形成用于第一和第二掺杂剂区域的公共连接装置。

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