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1. 发明授权

US08952424B2 RF CMOS transistor design 有权
标题翻译：射频CMOS晶体管设计
公开(公告)号：US08952424B2
公开(公告)日：2015-02-10
申请号：US13948948
申请日：2013-07-23
申请人： Cambridge Silicon Radio Limited
发明人： Rainer Herberholz
IPC分类号： H01L27/118 , H01L23/528 , H01L29/06 , H01L29/40 , H01L29/417 , H01L23/482 , H01L23/00
CPC分类号： H01L23/5283 , H01L23/4824 , H01L24/06 , H01L29/0692 , H01L29/402 , H01L29/41758 , H01L2924/14 , H01L2924/00
摘要： An improved RF CMOS transistor design is described. Local, narrow interconnect lines, which are located substantially above the active area of the transistor, are each connected to either a source terminal or a drain terminal. The source and the drain terminal are arranged orthogonally to the local interconnect lines and each terminal is significantly wider than a local interconnect line. In an example, the local interconnect lines are formed in a first metal layer and the source and drain terminals are formed in one or more subsequent metal layers.
摘要翻译：描述了改进的RF CMOS晶体管设计。位于晶体管的有效面积上方的局部，窄的互连线分别连接到源极端子或漏极端子。源极和漏极端子与本地互连线正交配置，并且每个端子比局部互连线宽得多。在一个示例中，局部互连线形成在第一金属层中，并且源极和漏极端子形成在一个或多个后续金属层中。

2. 发明申请

US20150270367A1 Ultra Low Power Transistor for 40nm Processes 审中-公开
标题翻译：用于40nm工艺的超低功耗晶体管
公开(公告)号：US20150270367A1
公开(公告)日：2015-09-24
申请号：US14560504
申请日：2014-12-04
申请人： Cambridge Silicon Radio Limited
发明人： David Vigar , Dave Verity , Rainer Herberholz
IPC分类号： H01L29/66
CPC分类号： H01L21/2658 , H01L21/26586 , H01L29/1083 , H01L29/66575 , H01L29/78
摘要： Methods of fabricating ultra-low power transistors are described using advanced technology nodes (e.g. 40 nm or less). In an embodiment, by optimizing a MOSFET to a different point, i.e. for low junction off (or leakage) current rather than speed/on current, a MOSFET can be produced which still meets the HCl reliability specification but has significantly reduced power consumption when off, e.g. half to one third of the standard off current. At this new optimisation point, the LDD dose is reduced to a level (e.g. 10-20% of the standard LDD dose) such that if it is reduced further, the device will no longer pass the HCl reliability specification. This is in contrast to standard MOSFETs which are optimized for speed/on current and have an LDD dose which, if increased further, would cause the device to no longer pass the HCl reliability specification.
摘要翻译：使用先进的技术节点（例如40nm或更小）来描述制造超低功率晶体管的方法。在一个实施例中，通过将MOSFET优化到不同的点，即用于低接通（或泄漏）电流而不是速度/导通电流，可以生产仍然满足HCl可靠性规范的MOSFET，但是在关断时显着降低功耗，例如标准关闭电流的一半到三分之一。在这个新的优化点，LDD剂量降低到一个水平（例如标准LDD剂量的10-20％），这样，如果进一步降低，器件将不再通过HCl可靠性规范。这与针对速度/导通电流进行了优化的标准MOSFET相反，并具有LDD剂量，如果进一步增加，则会导致器件不再通过HCl可靠性规范。

3. 发明授权

US09036756B2 Receiver and methods for calibration thereof 有权
标题翻译：接收器及其校准方法
公开(公告)号：US09036756B2
公开(公告)日：2015-05-19
申请号：US13750830
申请日：2013-01-25
申请人： CAMBRIDGE SILICON RADIO LIMITED
发明人： Simon Chang , Erik Lindskog , Hong Wan , Rainer Herberholz
IPC分类号： H04L7/00 , H04L7/04 , H04L7/033
CPC分类号： H04L7/042 , H04L7/0337
摘要： There is disclosed a receiver and associated methods in which a received signal can be sampled at the symbol rate rather than oversampled. This reduction in the sampling frequency compared with conventional receivers lowers power consumption. Quality metrics in receiving the data (e.g. packet error rate, etc) are not adversely affected by setting a programmable phase shift in the sampling frequency. The programmable shift can be selected through a calibration process using a known sequence of symbols, such as the short training field in 802.11 standards.
摘要翻译：公开了一种接收机和相关联的方法，其中可以以符号率对接收信号进行采样，而不是过采样。与常规接收器相比，采样频率的这种降低降低了功耗。通过设置采样频率的可编程相移，不会不利地影响接收数据的质量度量（例如分组错误率等）。可以使用已知的符号序列（例如802.11标准中的短训练场）通过校准过程来选择可编程移位。

4. 发明申请

US20150213180A1 INTEGRAL FABRICATION OF ASYMMETRIC CMOS TRANSISTORS FOR AUTONOMOUS WIRELESS STATE RADIOS AND SENSOR/ACTUATOR NODES 有权
标题翻译：用于自动无线状态无线电和传感器/执行器编号的不对称CMOS晶体管的集成制造
公开(公告)号：US20150213180A1
公开(公告)日：2015-07-30
申请号：US14168665
申请日：2014-01-30
申请人： CAMBRIDGE SILICON RADIO LIMITED
发明人： Rainer Herberholz
IPC分类号： G06F17/50
CPC分类号： G06F17/5072 , H01L21/823814 , H01L23/00 , H01L27/0207 , H01L27/092 , H01L29/1045 , H01L29/7835 , H01L2924/0002 , H01L2924/00
摘要： A method of arranging asymmetrically doped CMOS transistors in a semiconductor wafer that forms base cells within a plurality of logic standard cells in a CMOS process technology that includes conventional symmetric CMOS transistors having different threshold voltages. The asymmetrically doped CMOS transistors have a gate length exceeding 1.5 times the minimum gate length of the symmetric CMOS transistors. Regions defined by electrical junctions directly adjacent to the gate of the asymmetric transistors are formed by an implant mask exposing an area of the wafer on the source side of the transistor to receive the junction implant of the symmetric CMOS transistors with a higher threshold voltage while shielding the drain area, and a further implant mask exposing an area of the wafer on the drain side of the transistor to receive the junction implant of the symmetric CMOS transistors with a lower threshold voltage while shielding the source area.
摘要翻译：在半导体晶片中布置不对称掺杂的CMOS晶体管的方法，该半导体晶片在包括具有不同阈值电压的常规对称CMOS晶体管的CMOS工艺技术中在多个逻辑标准单元内形成基本单元。非对称掺杂的CMOS晶体管的栅极长度超过对称CMOS晶体管的最小栅极长度的1.5倍。由不对称晶体管的栅极直接相邻的电接点限定的区域由在晶体管的源极侧暴露晶片的区域的注入掩模形成，以接收具有较高阈值电压的对称CMOS晶体管的结注入，同时屏蔽漏极区域和另外的植入掩模，暴露晶体管的漏极侧的晶片的区域，以在屏蔽源极区域的同时接收具有较低阈值电压的对称CMOS晶体管的结注入。

5. 发明申请

US20140027862A1 RF CMOS TRANSISTOR DESIGN 有权
标题翻译：射频CMOS晶体管设计
公开(公告)号：US20140027862A1
公开(公告)日：2014-01-30
申请号：US13948948
申请日：2013-07-23
申请人： Cambridge Silicon Radio Limited
发明人： Rainer Herberholz
IPC分类号： H01L23/528
CPC分类号： H01L23/5283 , H01L23/4824 , H01L24/06 , H01L29/0692 , H01L29/402 , H01L29/41758 , H01L2924/14 , H01L2924/00
摘要： An improved RF CMOS transistor design is described. Local, narrow interconnect lines, which are located substantially above the active area of the transistor, are each connected to either a source terminal or a drain terminal. The source and the drain terminal are arranged orthogonally to the local interconnect lines and each terminal is significantly wider than a local interconnect line, in an example, the local interconnect lines are formed in a first metal layer and the source and drain terminals are formed in one or more subsequent metal layers.
摘要翻译：描述了改进的RF CMOS晶体管设计。位于晶体管的有效面积上方的局部，窄的互连线分别连接到源极端子或漏极端子。源极和漏极端子被布置成与局部互连线正交，并且每个端子比局部互连线明显宽，在一个示例中，局部互连线形成在第一金属层中，并且源极和漏极端子形成在一个或多个后续金属层。

6. 发明授权

US09012998B2 Gate depletion drain extended MOS transistor 有权
标题翻译：栅极耗尽漏极扩展MOS晶体管
公开(公告)号：US09012998B2
公开(公告)日：2015-04-21
申请号：US14333334
申请日：2014-07-16
申请人： Cambridge Silicon Radio Limited
发明人： Rainer Herberholz , Ludovic Oddoart , David Vigar
IPC分类号： H01L21/8234 , H01L29/10 , H01L29/49 , H01L29/66 , H01L29/78 , H01L21/266 , H01L21/28 , H01L21/265 , H01L29/06
CPC分类号： H01L21/823418 , H01L21/26586 , H01L21/266 , H01L21/28035 , H01L21/823437 , H01L29/0653 , H01L29/1045 , H01L29/4916 , H01L29/66537 , H01L29/66583 , H01L29/66659 , H01L29/7835
摘要： A drain extended MOS transistor configured to operate in a gate-depletion regime. Devices comprising such transistors are described together with fabrication processes for such devices and transistors.
摘要翻译：漏极扩展MOS晶体管被配置为以栅极耗尽方式工作。包括这种晶体管的器件与这种器件和晶体管的制造工艺一起被描述。

7. 发明申请

US20150044838A1 GATE DEPLETION DRAIN EXTENDED MOS TRANSISTOR 有权
标题翻译：栅极泄漏漏极扩展MOS晶体管
公开(公告)号：US20150044838A1
公开(公告)日：2015-02-12
申请号：US14333334
申请日：2014-07-16
申请人： Cambridge Silicon Radio Limited
发明人： Rainer Herberholz , Ludovic Oddoart , David Vigar
IPC分类号： H01L21/8234 , H01L29/10 , H01L29/66 , H01L29/49 , H01L21/266 , H01L21/28
CPC分类号： H01L21/823418 , H01L21/26586 , H01L21/266 , H01L21/28035 , H01L21/823437 , H01L29/0653 , H01L29/1045 , H01L29/4916 , H01L29/66537 , H01L29/66583 , H01L29/66659 , H01L29/7835
摘要： A drain extended MOS transistor configured to operate in a gate-depletion regime. Devices comprising such transistors are described together with fabrication processes for such devices and transistors.
摘要翻译：漏极扩展MOS晶体管被配置为以栅极耗尽方式工作。包括这种晶体管的器件与这种器件和晶体管的制造工艺一起被描述。

8. 发明申请

US20140211896A1 Receiver and Methods for Calibration Thereof 有权
标题翻译：接收机及其校准方法
公开(公告)号：US20140211896A1
公开(公告)日：2014-07-31
申请号：US13750830
申请日：2013-01-25
申请人： CAMBRIDGE SILICON RADIO LIMITED
发明人： Simon Chang , Erik Lindskog , Hong Wan , Rainer Herberholz
IPC分类号： H04L7/00
CPC分类号： H04L7/042 , H04L7/0337
摘要： There is disclosed a receiver and associated methods in which a received signal can be sampled at the symbol rate rather than oversampled. This reduction in the sampling frequency compared with conventional receivers lowers power consumption. Quality metrics in receiving the data (e.g. packet error rate, etc) are not adversely affected by setting a programmable phase shift in the sampling frequency. The programmable shift can be selected through a calibration process using a known sequence of symbols, such as the short training field in 802.11 standards.
摘要翻译：公开了一种接收机和相关联的方法，其中可以以符号率对接收信号进行采样，而不是过采样。与常规接收器相比，采样频率的这种降低降低了功耗。通过设置采样频率的可编程相移，不会不利地影响接收数据的质量度量（例如分组错误率等）。可以使用已知的符号序列（例如802.11标准中的短训练场）通过校准过程来选择可编程移位。

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