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1. 发明授权

US09711290B2 Curved RF electrode for improved Cmax 有权
公开(公告)号：US09711290B2
公开(公告)日：2017-07-18
申请号：US15024931
申请日：2014-09-24
申请人： CAVENDISH KINETICS, INC.
发明人： Mickael Renault , Vikram Joshi , Robertus Petrus Van Kampen , Thomas L. Maguire , Richard L. Knipe
IPC分类号： H01L29/84 , H01G5/16 , H01H59/00 , B81B3/00 , B81C1/00 , H01G5/011
CPC分类号： H01G5/16 , B81B3/0086 , B81B2201/0221 , B81B2203/04 , B81C1/00166 , B81C2201/0104 , B81C2201/0109 , H01G5/011 , H01H59/0009
摘要： The present invention generally relates to a MEMS device and a method of manufacture thereof. The RF electrode, and hence, the dielectric layer thereover, has a curved upper surface that substantially matches the contact area of the bottom surface of the movable plate. As such, the movable plate is able to have good contact with the dielectric layer and thus, good capacitance is achieved.

2. 发明授权

US09487395B2 Method of forming planar sacrificial material in a MEMS device 有权
标题翻译：在MEMS器件中形成平面牺牲材料的方法
公开(公告)号：US09487395B2
公开(公告)日：2016-11-08
申请号：US14914504
申请日：2014-09-02
申请人： CAVENDISH KINETICS, INC.
发明人： Brian I. Troy , James F. Bobey , Mickael Renault , Joseph Damian Gordon Lacey , Thomas L. Maguire
IPC分类号： H01L21/00 , B81C1/00 , H01G5/16
CPC分类号： B81C1/00611 , H01G5/16
摘要： The present invention generally relates to a method of fabricating a MEMS device. In the MEMS device, a movable plate is disposed within a cavity such that the movable plate is movable within the cavity. To form the cavity, sacrificial material may be deposited and then the material of the movable plate is deposited thereover. The sacrificial material is removed to free the mov able plate to move within the cavity. The sacrificial material, once deposited, may not be sufficiently planar because the height difference between the lowest point and the highest point of the sacrificial material may be quite high. To ensure the movable plate is sufficiently planar, the planarity of the sacrificial material should be maximized. To maximize the surface planarity of the sacrificial material, the sacrificial material may be deposited and then conductive heated to permit the sacrificial material to reflow and thus, be planarized.
摘要翻译：本发明一般涉及制造MEMS器件的方法。在MEMS装置中，可动板设置在空腔内，使得可移动板可在空腔内移动。为了形成空腔，可以沉积牺牲材料，然后将可移动板的材料沉积在其上。去除牺牲材料以使可移动板在空腔内移动。由于牺牲材料的最低点和最高点之间的高度差可能相当高，牺牲材料一旦被沉积就可能不够平坦。为了确保可动板足够平坦，牺牲材料的平面度应该被最大化。为了使牺牲材料的表面平坦度最大化，可以沉积牺牲材料，然后进行导电加热，以使牺牲材料回流并因此被平坦化。

3. 发明授权

US08921953B2 Method for MEMS device fabrication and device formed 有权
标题翻译： MEMS器件制造方法及器件形成
公开(公告)号：US08921953B2
公开(公告)日：2014-12-30
申请号：US13946479
申请日：2013-07-19
申请人： Cavendish Kinetics Inc.
发明人： Mickael Renault , Joseph Damian Gordon Lacey , Vikram Joshi , Thomas L. Maguire
IPC分类号： H01L29/84 , B81C1/00 , B81B3/00
CPC分类号： B81B3/0072 , B81B2203/0118 , B81B2203/0307 , B81B2207/096 , B81C1/00039 , B81C1/00333 , B81C1/00476 , B81C2201/0132 , B81C2201/014 , B81C2203/0145 , B81C2203/0714
摘要： The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.
摘要翻译：本发明一般涉及用于生产MEMS或NEMS装置和装置本身的方法。与悬臂结构相比，具有较低复合系数的材料的薄层可以沉积在悬臂结构，RF电极和拉出电极上。薄层允许引入空腔的蚀刻气体降低空腔内的整体蚀刻剂复合速率，从而提高空腔内的牺牲材料的蚀刻速率。蚀刻剂本身可以通过与悬臂结构的锚固部分线性对准的封装层中的开口引入，使得首先蚀刻最顶层的牺牲材料。此后，密封材料可以密封空腔并且一直延伸到空腔中，以锚定部分，以向锚固部分提供额外的强度。

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