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    • 1. 发明授权
    • Readout circuit with self-detection circuit and control method therefor
    • 具有自检电路的读出电路及其控制方法
    • US09466388B2
    • 2016-10-11
    • US15025846
    • 2014-10-10
    • CSMC TECHNOLOGIES FAB1 CO., LTD.
    • Shuming GuoGuoyi Zong
    • G11C7/00G11C16/26G11C16/24G11C16/32
    • G11C16/26G11C16/24G11C16/32
    • A readout circuit with a self-detection circuit and a control method therefor. The circuit comprises a pre-charging circuit and a control circuit, the pre-charging circuit and the control circuit being connected to a first node and used for charging a memory unit. The readout circuit also comprises a detection circuit, the detection circuit and the pre-charging circuit being connected to the first node. The detection circuit comprises a third NOT gate, a fourth NOT gate, a first NAND gate, a sixth NOT gate, a first trigger and an eighth NOT gate. In such a manner of detecting the reversal of the first NOT gate through the reversal of the third NOT gate, the charging duration of the first node (A) can be greatly reduced, thereby reducing the reading duration of the whole circuit. At the same time, the re-occurrence of a state of charging the circuit can be avoided after pre-charging has ended.
    • 一种具有自检电路及其控制方法的读出电路。 该电路包括预充电电路和控制电路,预充电电路和控制电路连接到第一节点并用于对存储器单元充电。 读出电路还包括检测电路,检测电路和预充电电路连接到第一节点。 检测电路包括第三NOT门,第四NOT门,第一NAND门,第六NOT门,第一触发器和第八NOT门。 以这样的方式,通过第三非门的反相来检测第一非门的反向,可以大大减少第一节点(A)的充电持续时间,从而减少整个电路的读取持续时间。 同时,在预充电结束之后可以避免电路充电状态的再次发生。