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1. 发明授权

US09466388B2 Readout circuit with self-detection circuit and control method therefor 有权
标题翻译：具有自检电路的读出电路及其控制方法
公开(公告)号：US09466388B2
公开(公告)日：2016-10-11
申请号：US15025846
申请日：2014-10-10
申请人： CSMC TECHNOLOGIES FAB1 CO., LTD.
发明人： Shuming Guo , Guoyi Zong
IPC分类号： G11C7/00 , G11C16/26 , G11C16/24 , G11C16/32
CPC分类号： G11C16/26 , G11C16/24 , G11C16/32
摘要： A readout circuit with a self-detection circuit and a control method therefor. The circuit comprises a pre-charging circuit and a control circuit, the pre-charging circuit and the control circuit being connected to a first node and used for charging a memory unit. The readout circuit also comprises a detection circuit, the detection circuit and the pre-charging circuit being connected to the first node. The detection circuit comprises a third NOT gate, a fourth NOT gate, a first NAND gate, a sixth NOT gate, a first trigger and an eighth NOT gate. In such a manner of detecting the reversal of the first NOT gate through the reversal of the third NOT gate, the charging duration of the first node (A) can be greatly reduced, thereby reducing the reading duration of the whole circuit. At the same time, the re-occurrence of a state of charging the circuit can be avoided after pre-charging has ended.
摘要翻译：一种具有自检电路及其控制方法的读出电路。该电路包括预充电电路和控制电路，预充电电路和控制电路连接到第一节点并用于对存储器单元充电。读出电路还包括检测电路，检测电路和预充电电路连接到第一节点。检测电路包括第三NOT门，第四NOT门，第一NAND门，第六NOT门，第一触发器和第八NOT门。以这样的方式，通过第三非门的反相来检测第一非门的反向，可以大大减少第一节点（A）的充电持续时间，从而减少整个电路的读取持续时间。同时，在预充电结束之后可以避免电路充电状态的再次发生。

2. 发明授权

US09397106B2 Method for producing MROM memory based on OTP memory 有权
标题翻译：基于OTP存储器生成MROM存储器的方法
公开(公告)号：US09397106B2
公开(公告)日：2016-07-19
申请号：US14398753
申请日：2013-05-09
申请人： CSMC TECHNOLOGIES FAB1 CO., LTD.
发明人： Shuming Guo
IPC分类号： G06F17/50 , H01L27/115 , H01L27/02 , G11C17/12 , H01L27/112
CPC分类号： H01L27/115 , G06F17/5068 , G11C17/12 , H01L27/0207 , H01L27/11233
摘要： A method of producing a Macro Read Only Memory (MROM) memory based on a One Time Programmable (OTP) memory is provided. The method includes: removing a floating gate of a second P-type Metal Oxide Semiconductor (PMOS) transistor of an OTP memory cell for storing data “0” in an OTP memory map, such that the OTP memory cell being transferred to a MROM memory cell for storing data “0”, and retaining an original structure of the OTP memory cell for storing data “1” in the OTP memory map, such that the original structure being used as a MROM memory cell for storing data “1”, thus forming a MROM memory map; and producing a MROM memory according to a MROM memory map. The OTP memory map is debugged to determine data which can be changed into the MROM memory map, and an OTP process can be transferred into a MROM process by adjusting only one mask during a producing process.
摘要翻译：提供了一种基于一次可编程（OTP）存储器产生宏存储器（MROM）存储器的方法。该方法包括：移除OTP存储单元的第二P型金属氧化物半导体（PMOS）晶体管的浮置栅极，用于将数据“0”存储在OTP存储器映射中，使得OTP存储器单元被传送到MROM存储器用于存储数据“0”的单元，并将用于存储数据“1”的OTP存储单元的原始结构保留在OTP存储器映射中，使得原始结构用作用于存储数据“1”的MROM存储单元，因此形成MROM记忆图; 并根据MROM存储器映射产生MROM存储器。调试OTP存储器映射以确定可以改变为MROM存储器映射的数据，并且可以通过在生产过程中仅调整一个掩模将OTP处理传送到MROM过程。

3. 发明申请

US20150143320A1 METHOD FOR PRODUCING MROM MEMORY BASED ON OTP MEMORY 有权
标题翻译：基于OTP存储器生成MROM存储器的方法
公开(公告)号：US20150143320A1
公开(公告)日：2015-05-21
申请号：US14398753
申请日：2013-05-09
申请人： CSMC TECHNOLOGIES FAB1 CO., LTD.
发明人： Shuming Guo
IPC分类号： H01L27/115 , G06F17/50 , H01L27/02
CPC分类号： H01L27/115 , G06F17/5068 , G11C17/12 , H01L27/0207 , H01L27/11233
摘要： A method of producing a MROM memory based on an OTP memory is provided. The method includes: removing the floating gate of the second PMOS transistor of the OTP memory cell for storing data “0” in the OTP memory map, such that the OTP memory cell being transferred to a MROM memory cell for storing data “0”, and retaining the original structure of the OTP memory cell for storing data “1” in the OTP memory map, such that the original structure being used as a MROM memory cell for storing data “1”, thus forming a MROM memory map; and producing a MROM memory according to the MROM memory map. According to the present invention, the OTP memory map which is debugged and has determined data can be changed into the MROM memory map, and the OTP process can be transferred into the MROM process by adjusting only one mask during the producing process. The present invention greatly saves the time and cost of the device programming and testing, thus simplifying the process and saving the cost, increasing the profit.
摘要翻译：提供了一种基于OTP存储器生成MROM存储器的方法。该方法包括：移除OTP存储器单元中的第二PMOS晶体管的浮置栅极用于在OTP存储器映射中存储数据“0”，使得OTP存储器单元被传送到用于存储数据“0”的MROM存储单元，并且将OTP存储单元的原始结构保留在OTP存储器映射中，使得原始结构被用作用于存储数据“1”的MROM存储单元，从而形成MROM存储器映射; 并根据MROM存储器映射产生MROM存储器。根据本发明，调试并确定了数据的OTP存储器映射可以改变为MROM存储器映射，并且可以通过在生产过程中仅调整一个掩码来将OTP处理传送到MROM处理。本发明大大节省了设备编程和测试的时间和成本，从而简化了流程并节省了成本，增加了利润。

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