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1. 发明申请

US20230131390A1 METHOD FOR ASCERTAINING AN IMAGE OF AN OBJECT 有权
公开(公告)号：US20230131390A1
公开(公告)日：2023-04-27
申请号：US18089796
申请日：2022-12-28
申请人： Carl Zeiss SMT GmbH
发明人： Christoph Husemann , Dirk Seidel , Marco Mout
IPC分类号： G03F1/84 , G02B27/09
摘要： To ascertain an image of an object which emerges when the object is illuminated with illumination light from a partly coherent light source with a target illumination setting having an illumination-side numerical aperture NA_illu and an imaging-side numerical aperture NA_detection, the following procedure is performed: initially, a section of the object is illuminated with illumination light from a coherent measurement light source with an illumination setting having an illumination-side numerical aperture NA_i, which is at least as large as NA_detection. Then, a diffraction image of the illuminated section is recorded. This is implemented by way of a spatially resolved detection in a far field detection plane of a diffraction intensity of illumination light diffracted by the illuminated section with a recording-side numerical aperture NA by way of a plurality of sensor pixels. This recording-side aperture must be greater than or equal to the maximum of NA_illu and NA_detection. From the recorded diffraction image data, the image of the section of the object for the target illumination setting is then ascertained from the recorded diffraction image data. An apparatus for carrying out the method comprises a measurement light source for providing the illumination light and a spatially resolving detector, arranged in the detection plane, for recording the diffraction image. This yields a method and an apparatus by means of which a flexible image ascertainment of sections of the object is facilitated, in particular for different target illumination settings.

2. 发明授权

US11054305B2 Method and device for beam analysis 有权
公开(公告)号：US11054305B2
公开(公告)日：2021-07-06
申请号：US16694115
申请日：2019-11-25
申请人： Carl Zeiss SMT GmbH
发明人： Matthias Manger , Christoph Husemann , Matus Kalisky , Lars Stoppe
IPC分类号： B23K26/04 , G01J1/42 , G01J1/04 , G02B27/10 , B23K26/03 , B23K26/70
摘要： A method and an apparatus for beam analysis in an optical system are disclosed, wherein a plurality of beam parameters of a beam propagating along an optical axis are ascertained. The method includes: splitting the beam into a plurality of partial beams which have a focus offset in the longitudinal direction in relation to the optical axis; recording a measurement image produced by these partial beams; carrying out a forward simulation of the beam in the optical system on the basis of estimated initial values for the beam parameters in order to obtain a simulated image; and calculating a set of values for the beam parameters on the basis of the comparison between the simulated image and the measurement image.

3. 发明申请

US20190107776A1 METHOD AND APPLIANCE FOR PREDICTING THE IMAGING RESULT OBTAINED WITH A MASK WHEN A LITHOGRAPHY PROCESS IS CARRIED OUT 审中-公开
公开(公告)号：US20190107776A1
公开(公告)日：2019-04-11
申请号：US16197658
申请日：2018-11-21
申请人： Carl Zeiss SMT GmbH
发明人： Thomas Thaler , Holger Seitz , Ute Buttgereit , Thomas Trautzsch , Mame Kouna Top-Dial-Lo , Christoph Husemann
IPC分类号： G03F1/84
摘要： The invention relates to a method and an appliance for predicting the imaging result obtained with a mask when a lithography process is carried out, wherein the mask comprises mask structures to be imaged and the mask is destined to be illuminated in a lithography process in a projection exposure apparatus with a predetermined illumination setting for exposing a wafer comprising a photoresist. In accordance with one aspect of the invention, a method according to the invention comprises the following steps: measuring at least one intensity distribution obtained for the mask in the case of an illumination with illumination light in accordance with the illumination setting in a mask inspection apparatus using a sensor arrangement, ascertaining an electric field resulting from the interaction of the illumination light with the mask structures, both in respect of amplitude and in respect of phase, by way of this intensity measurement, and estimating an intensity distribution obtained in the photoresist when the lithography process is carried out on the basis of a mathematical simulation (forward calculation), in which the electric field ascertained is propagated in a layer system comprising at least the photoresist.

4. 发明申请

US20210073969A1 METHOD AND APPARATUS FOR EVALUATING AN UNKNOWN EFFECT OF DEFECTS OF AN ELEMENT OF A PHOTOLITHOGRAPHY PROCESS 有权
公开(公告)号：US20210073969A1
公开(公告)日：2021-03-11
申请号：US17087970
申请日：2020-11-03
申请人： Carl Zeiss SMT GmbH
发明人： Alexander Freytag , Christoph Husemann , Dirk Seidel , Carsten Schmidt
IPC分类号： G06T7/00 , G06N20/00 , G06N3/08 , G06F30/20
摘要： The present invention relates to a method and an apparatus for determining at least one unknown effect of defects of an element of a photolithography process. The method comprises the steps of: (a) providing a model of machine learning for a relationship between an image, design data associated with the image and at least one effect of the defects of the element of the photolithography process arising from the image; (b) training the model of machine learning using a multiplicity of images used for training purposes, design data associated with the images used for training purposes and corresponding effects of the defects; and (c) determining the at least one unknown effect of the defects by applying the trained model to a measured image and the design data associated with the measured image.

5. 发明申请

US20190391087A1 METHOD FOR DETECTING A STRUCTURE OF A LITHOGRAPHY MASK AND DEVICE FOR CARRYING OUT THE METHOD 审中-公开
公开(公告)号：US20190391087A1
公开(公告)日：2019-12-26
申请号：US16451203
申请日：2019-06-25
申请人： Carl Zeiss SMT GmbH
发明人： Ulrich Matejka , Thomas Scheruebl , Markus Koch , Christoph Husemann , Lars Stoppe , Beat Marco Mout
IPC分类号： G01N21/956 , G01N21/33
摘要： In detecting the structure of a lithography mask, a portion of the lithography mask is firstly illuminated with illumination light of an at least partially coherent light source in the at least one preferred illumination direction. A diffraction image of the illuminated portion is then recorded by spatially resolved detection of a diffraction intensity of the illumination light diffracted from the illuminated portion in a detection plane. The steps of “illuminating” and “recording the diffraction image” are then carried out for further portions of the lithography mask. Between at least two portions of the lithography mask that are thereby detected, there is in each case an overlap region whose surface extent measures at least 5% or more of the smaller of the two portions of the lithography mask. The repetition takes place until the detected portions of the lithography mask completely cover a region of the lithography mask to be detected. The structure of the lithography mask is calculated from the recorded diffraction images of the illuminated portions. A device for carrying out the structure detection method is also specified, which comprises a light source, a spatially-resolving detector and a mask holder. This results in a method and a device for detecting the structure of a lithography mask, in which the demands placed on an optical unit arranged downstream in the beam path from the illumination light of the lithography mask are reduced.

6. 发明申请

US20170132782A1 METHOD FOR THREE-DIMENSIONALLY MEASURING A 3D AERIAL IMAGE OF A LITHOGRAPHY MASK 审中-公开
公开(公告)号：US20170132782A1
公开(公告)日：2017-05-11
申请号：US15410918
申请日：2017-01-20
申请人： Carl Zeiss SMT GmbH
发明人： Ulrich Matejka , Christoph Husemann , Johannes Ruoff , Sascha Perlitz , Hans-Jürgen Mann
IPC分类号： G06T7/00 , G06T7/11 , G06T3/40 , G03F1/84 , G06T11/60 , G02B27/22 , G02B27/09 , G06T7/60 , G06T3/00
CPC分类号： G06T7/0004 , G02B5/005 , G02B13/08 , G02B17/0647 , G02B17/0828 , G02B17/0848 , G02B21/04 , G02B21/361 , G02B27/0927 , G02B27/0988 , G02B27/2292 , G03F1/84 , G06T3/0093 , G06T3/40 , G06T7/11 , G06T7/60 , G06T11/60 , G06T2200/04 , G06T2207/10032 , G06T2207/20048 , G06T2207/20076 , G06T2207/30148 , G21K7/00
摘要： In a method for three-dimensionally measuring a 3D aerial image in the region around an image plane during the imaging of a lithography mask, which is arranged in an object plane, a selectable imaging scale ratio in mutually perpendicular directions (x, y) is taken into account. For this purpose, an electromagnetic wavefront of imaging light is reconstructed after interaction thereof with the lithography mask. An influencing variable that corresponds to the imaging scale ratio is included. Finally, the 3D aerial image measured with the inclusion of the influencing variable is output. This results in a measuring method with which lithography masks that are optimized for being used with an anamorphic projection optical unit during projection exposure can also be measured.

7. 发明授权

US11079338B2 Method for detecting a structure of a lithography mask and device for carrying out the method 有权
公开(公告)号：US11079338B2
公开(公告)日：2021-08-03
申请号：US16451203
申请日：2019-06-25
申请人： Carl Zeiss SMT GmbH
发明人： Ulrich Matejka , Thomas Scheruebl , Markus Koch , Christoph Husemann , Lars Stoppe , Beat Marco Mout
IPC分类号： G01N21/956 , G01N21/33 , G01B9/02 , G03F1/84
摘要： In detecting the structure of a lithography mask, a portion of the lithography mask is firstly illuminated with illumination light of an at least partially coherent light source in the at least one preferred illumination direction. A diffraction image of the illuminated portion is then recorded by spatially resolved detection of a diffraction intensity of the illumination light diffracted from the illuminated portion in a detection plane. The steps of “illuminating” and “recording the diffraction image” are then carried out for further portions of the lithography mask. Between at least two portions of the lithography mask that are thereby detected, there is in each case an overlap region whose surface extent measures at least 5% or more of the smaller of the two portions of the lithography mask. The repetition takes place until the detected portions of the lithography mask completely cover a region of the lithography mask to be detected. The structure of the lithography mask is calculated from the recorded diffraction images of the illuminated portions. A device for carrying out the structure detection method is also specified, which comprises a light source, a spatially-resolving detector and a mask holder. This results in a method and a device for detecting the structure of a lithography mask, in which the demands placed on an optical unit arranged downstream in the beam path from the illumination light of the lithography mask are reduced.

8. 发明申请

US20170115557A1 METHOD FOR LOCALIZING DEFECTS ON SUBSTRATES 审中-公开
公开(公告)号：US20170115557A1
公开(公告)日：2017-04-27
申请号：US15400221
申请日：2017-01-06
申请人： Carl Zeiss SMT GmbH , Carl Zeiss AG
发明人： Jan Hendrik Peters , Frederick Blumrich , Dirk Seidel , Christoph Husemann
IPC分类号： G03F1/84 , G01N21/88 , G01N21/33 , G03F1/22
CPC分类号： G03F1/84 , G01N21/33 , G01N21/88 , G03F1/22
摘要： In a method for localizing defects on a substrate for EUV masks, a phase contrast optical unit having a phase mask is used for examining the substrate.

9. 发明申请

US20210158215A1 METHOD AND DEVICE FOR EVALUATING A STATISTICALLY DISTRIBUTED MEASURED VALUE IN THE EXAMINATION OF AN ELEMENT OF A PHOTOLITHOGRAPHY PROCESS 有权
公开(公告)号：US20210158215A1
公开(公告)日：2021-05-27
申请号：US17140250
申请日：2021-01-04
申请人： Carl Zeiss SMT GmbH
发明人： Dirk Seidel , Alexander Freytag , Christian Wojek , Susanne Töpfer , Carsten Schmidt , Christoph Husemann
IPC分类号： G06N20/00 , G06F17/18 , G03F7/20
摘要： The present invention relates to a method for evaluating a statistically distributed measured value in the examination of an element for a photolithography process, comprising the following steps: (a) using a plurality of parameters in a trained machine learning model, wherein the parameters characterize a state of a measurement environment in a time period assigned to a measurement of the measured value; and (b) executing the trained machine learning model in order to evaluate the measured value.

10. 发明授权

US10788748B2 Method and appliance for predicting the imaging result obtained with a mask when a lithography process is carried out 有权
公开(公告)号：US10788748B2
公开(公告)日：2020-09-29
申请号：US16197658
申请日：2018-11-21
申请人： Carl Zeiss SMT GmbH
发明人： Thomas Thaler , Holger Seitz , Ute Buttgereit , Thomas Trautzsch , Mame Kouna Top-Diallo , Christoph Husemann
IPC分类号： G06F17/50 , G03F1/84 , G03F7/20 , G01N21/956
摘要： The invention relates to a method and an appliance for predicting the imaging result obtained with a mask when a lithography process is carried out, wherein the mask comprises mask structures to be imaged and the mask is destined to be illuminated in a lithography process in a projection exposure apparatus with a predetermined illumination setting for exposing a wafer comprising a photoresist. In accordance with one aspect of the invention, a method according to the invention comprises the following steps: measuring at least one intensity distribution obtained for the mask in the case of an illumination with illumination light in accordance with the illumination setting in a mask inspection apparatus using a sensor arrangement, ascertaining an electric field resulting from the interaction of the illumination light with the mask structures, both in respect of amplitude and in respect of phase, by way of this intensity measurement, and estimating an intensity distribution obtained in the photoresist when the lithography process is carried out on the basis of a mathematical simulation (forward calculation), in which the electric field ascertained is propagated in a layer system comprising at least the photoresist.

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