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1. 发明授权

US10566140B2 DVC utilizing MEMS resistive switches and MIM capacitors 有权
公开(公告)号：US10566140B2
公开(公告)日：2020-02-18
申请号：US14904855
申请日：2014-08-01
申请人： CAVENDISH KINETICS, INC.
发明人： Richard L. Knipe , Charles G. Smith , Roberto Gaddi , Robertus Petrus Van Kampen
IPC分类号： H01G5/00 , H01G5/40 , H01H59/00 , H01G5/38 , H01G5/18 , H01G5/16 , H01L49/02
摘要： The present invention generally relates to a MEMS DVC utilizing one or more MIM capacitors. The MIM capacitor may be disposed between the MEMS device and the RF pad or the MIM capacitor may be integrated into the MEMS device itself. The MIM capacitor ensures that a low resistance for the MEMS DVC is achieved.

2. 发明授权

US10707039B2 Current handling in legs and anchors of RF-switch 有权
公开(公告)号：US10707039B2
公开(公告)日：2020-07-07
申请号：US15771038
申请日：2016-11-14
申请人： CAVENDISH KINETICS, INC.
发明人： Robertus Petrus Van Kampen , Richard L. Knipe
IPC分类号： H01L27/14 , H01H59/00 , H01G5/38 , B81B7/00 , B81C1/00 , H01G5/16 , H01H1/00
摘要： The present invention generally relates to a mechanism for making the anchor of the MEMS switch more robust for current handling. The disclosure includes a modified leg and anchor design that allows for larger currents to be handled by the MEMS switch.

3. 发明授权

US09948212B2 Method and technique to control MEMS DVC control waveform for lifetime enhancement 有权
公开(公告)号：US09948212B2
公开(公告)日：2018-04-17
申请号：US14889118
申请日：2014-05-16
申请人： CAVENDISH KINETICS, INC.
发明人： Cong Quoc Khieu , James Douglas Huffman , Richard L. Knipe , Vikram Joshi , Robertus Petrus Van Kampen
IPC分类号： H02N1/00 , B81B7/00 , H01G5/18 , H01H59/00 , B81B7/02 , H01G5/011
CPC分类号： H02N1/006 , B81B7/008 , B81B7/02 , B81B2201/0221 , H01G5/011 , H01G5/18 , H01H59/0009 , H03J2200/39
摘要： The present invention generally relates to a method of operating a MEMS DVC while minimizing impact of the MEMS device on contact surfaces. By reducing the drive voltage upon the pull-in movement of the MEMS device, the acceleration of the MEMS device towards the contact surface is reduced and thus, the impact velocity is reduced and less damage of the MEMS DVC device occurs.

4. 发明授权

US09385594B2 Two-state charge-pump control-loop for MEMS DVC control 有权
标题翻译：用于MEMS DVC控制的双态电荷泵控制回路
公开(公告)号：US09385594B2
公开(公告)日：2016-07-05
申请号：US14783281
申请日：2014-04-02
申请人： CAVENDISH KINETICS, INC.
发明人： Robertus Petrus Van Kampen , Cong Quoc Khieu , James Douglas Huffman , Richard L. Knipe
IPC分类号： H02M3/07 , B81B7/00
CPC分类号： H02M3/07 , B81B7/00 , B81B7/008 , B81B2201/014 , B81B2203/0109
摘要： The present invention generally relates to a DVC having a charge-pump coupled to a MEMS device. The charge-pump is designed to control the output voltage delivered to the electrodes, such as the pull-in electrode or the pull-off electrode, that move the switching element within the MEMS device between locations spaced far from and disposed closely to the RF electrode.
摘要翻译：本发明一般涉及具有耦合到MEMS器件的电荷泵的DVC。电荷泵被设计成控制传递到电极的输出电压，例如拉入电极或拉出电极，其将MEMS器件内的开关元件移动到与RF紧密相邻的位置处电极。

5. 发明授权

US11114265B2 Thermal management in high power RF MEMS switches 有权
公开(公告)号：US11114265B2
公开(公告)日：2021-09-07
申请号：US15770698
申请日：2016-11-14
申请人： CAVENDISH KINETICS, INC.
发明人： Robertus Petrus Van Kampen , Richard L. Knipe
IPC分类号： H01H59/00 , H01H1/00
摘要： The present disclosure generally relates to a mechanism for making a MEMS switch that can switch large electrical powers. Extra landing electrodes are employed that provide added electrical contact along the MEMS device so that when in contact current and heat are removed from the MEMS structure close to the hottest points.

6. 发明授权

US10163566B2 DVC utilizing MIMS in the anchor 有权
公开(公告)号：US10163566B2
公开(公告)日：2018-12-25
申请号：US15548992
申请日：2016-01-28
申请人： CAVENDISH KINETICS, INC.
发明人： Robertus Petrus Van Kampen , Roberto Gaddi , Richard L. Knipe
IPC分类号： H01H59/00 , H01G5/16 , H01G4/005 , H01H1/00
摘要： The present disclosure generally relates to a MEMS DVC utilizing one or more MIM capacitors located in the anchor of the DVC and an Ohmic contact located on the RF-electrode. The MIM capacitor in combination with the ohmic MEMS device ensures that a stable capacitance for the MEMS DVC is achieved with applied RF power.

7. 发明授权

US09754724B2 Stress control during processing of a MEMS digital variable capacitor (DVC) 有权
公开(公告)号：US09754724B2
公开(公告)日：2017-09-05
申请号：US14898678
申请日：2014-06-04
申请人： CAVENDISH KINETICS, INC.
发明人： Robertus Petrus Van Kampen , Richard L. Knipe
IPC分类号： H01L49/02 , H01G5/16 , H01G5/18
CPC分类号： H01G5/16 , H01G5/18 , H01L28/60
摘要： The present invention generally relates to a MEMS digital variable capacitor (DVC) (900) and a method for manufacture thereof. The movable plate (938) within a MEMS DVC should have the same stress level to ensure proper operation of the MEMS DVC. To obtain the same stress level, the movable plate is decoupled from CMOS ground during fabrication. The movable plate is only electrically coupled to CMOS ground after the plate has been completely formed. The coupling occurs by using the same layer (948) that forms the pull-up electrode as the layer that electrically couples the movable plate to CMOS ground. As the same layer couples the movable plate to CMOS ground and also provides the pull-up electrode for the MEMS DVC, the deposition occurs in the same processing step. By electrically coupling the movable plate to CMOS ground after formation, the stress in each of the layers of the movable plate can be substantially identical.

8. 发明授权

US09711291B2 MEMS digital variable capacitor design with high linearity 有权
公开(公告)号：US09711291B2
公开(公告)日：2017-07-18
申请号：US14779542
申请日：2014-04-02
申请人： CAVENDISH KINETICS, INC.
发明人： Richard L. Knipe , Robertus Petrus Van Kampen
IPC分类号： H01G5/18 , B81B3/00 , H01G5/16 , H01H59/00 , H01G5/011 , H01G5/013
CPC分类号： H01G5/18 , B81B3/0051 , B81B3/007 , B81B2201/0221 , H01G5/011 , H01G5/0136 , H01G5/16 , H01H59/0009 , H01H2059/0072
摘要： The present invention generally relates to a MEMS DVC and a method for fabrication thereof. The MEMS DVC comprises a plate movable from a position spaced a first distance from an RF electrode and a second position spaced a second distance from the RF electrode that is less than the first distance. When in the second position, the plate is spaced from the RF electrode by a dielectric layer that has an RF plateau over the RF electrode. One or more secondary landing contacts and one or more plate bend contacts may be present as well to ensure that the plate obtains a good contact with the RF plateau and a consistent Cmax value can be obtained. On the figure PB contact is the plate bend contact, SL contact is the Second Landing contact and the PD electrode is the Pull Down electrode.

9. 发明申请

US20150235771A1 VARIABLE CAPACITOR COMPROMISING MEMS DEVICES FOR RADIO FREQUENCY APPLICATIONS 有权
标题翻译：可变电容器用于无线电频率应用的MEMS器件
公开(公告)号：US20150235771A1
公开(公告)日：2015-08-20
申请号：US14420152
申请日：2013-08-07
申请人： CAVENDISH KINETICS, INC.
发明人： Robertus Petrus Van Kampen , Richard L. Knipe
IPC分类号： H01G5/16 , H01G5/38
CPC分类号： H01G5/16 , H01G5/18 , H01G5/38 , H01L27/01 , H01L27/0207 , H01L27/0805 , H01L28/60 , H01L2924/0002 , H01L2924/19041 , H01L2924/19104 , H01L2924/0001
摘要： A variable capacitor (300) comprises cells (200, 400) that have an RF electrode (202, 402) coupled to a bond pad (30). Each cell comprises a plurality of MEMS devices (100) the capacitance of which can be changed by means of a movable electrode. The MEMS devices are placed in a sealed cavity of the cell and are arranged next to each other along the length of the RF electrode of the cell. The RF electrode of each cell can be trimmed so as to obtain an RF line (402) and a further ground electrode (404) and so as to scale the RF capacitance of the cell without impacting the mechanical performance of the MEMS cells. Each cell has the same control capacitance irrespective of the RF capacitance. This allows each cell to use the same isolation resistor required for RF operation and thus each cell has the same parasitic capacitance. This allows the CMOS control circuit to be optimized and the dynamic performance of the cells to be matched.
摘要翻译：可变电容器（300）包括具有耦合到接合焊盘（30）的RF电极（202,402）的电池（200,400）。每个单元包括多个MEMS器件（100），其电容可以通过可移动电极来改变。 MEMS器件被放置在电池的密封空腔中并且沿着电池的RF电极的长度彼此相邻地布置。可以对每个单元的RF电极进行修整，以获得RF线（402）和另外的接地电极（404），以便在不影响MEMS单元的机械性能的情况下缩放电池的RF电容。每个单元都具有与RF电容无关的相同的控制电容。这允许每个单元使用RF操作所需的相同的隔离电阻，因此每个单元具有相同的寄生电容。这允许CMOS控制电路被优化并且电池的动态性能匹配。

10. 发明授权

US11417487B2 MEMS RF-switch with near-zero impact landing 有权
公开(公告)号：US11417487B2
公开(公告)日：2022-08-16
申请号：US16343912
申请日：2017-09-14
申请人： CAVENDISH KINETICS, INC.
发明人： Richard L. Knipe , Robertus Petrus Van Kampen , James Douglas Huffman , Lance Barron
IPC分类号： H01H59/00 , H01H1/00
摘要： The present disclosure generally relates to the design of a MEMS ohmic switch which provides for a low-impact landing of the MEMS device movable plate on the RF contact and a high restoring force for breaking the contacts to improve the lifetime of the switch. The switch has at least one contact electrode disposed off-center of the switch device and also has a secondary landing post disposed near the center of the switch device. The secondary landing post extends to a greater height above the substrate as compared to the RF contact of the contact electrode so that the movable plate contacts the secondary landing post first and then gently lands on the RF contact. Upon release, the movable plate will disengage from the RF contact prior to disengaging from the secondary landing post and have a longer lifetime due to the high restoring force.

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