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1. 发明授权

US07573113B2 Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation 有权
标题翻译：具有超浅结的光电二极管，用于高量子效率CMOS图像传感器和形成方法
公开(公告)号：US07573113B2
公开(公告)日：2009-08-11
申请号：US11093286
申请日：2005-03-30
申请人： Chandra Mouli , Howard E. Rhodes , Richard A. Mauritzson
发明人： Chandra Mouli , Howard E. Rhodes , Richard A. Mauritzson
IPC分类号： H01L27/148 , H01L29/80
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14643 , H01L27/14689 , H01L31/0352 , H01L31/101
摘要： A pinned photodiode with an ultra-shallow highly-doped surface layer of a first conductivity type and a method of formation are disclosed. The ultra-shallow highly-doped surface layer has a thickness of about 100 Angstroms to about 500 Angstroms and a dopant concentration of about 5×1017 atoms per cm3 to about 1×1019 atoms per cm3. The ultra-shallow highly-doped surface layer is formed by diffusion of ions from a doped layer into the substrate or by a plasma doping process. The ultra-shallow pinned layer is in contact with a charge collection region of a second conductivity type.
摘要翻译：公开了具有第一导电类型的超浅高掺杂表面层和形成方法的钉扎光电二极管。超浅高掺杂表面层的厚度为约100埃至约500埃，掺杂剂浓度为约5×10 17原子/ cm 3至约1×10 19原子/ cm 3。超浅高掺杂表面层通过将离子从掺杂层扩散到衬底中或通过等离子体掺杂工艺形成。超浅钉扎层与第二导电类型的电荷收集区域接触。

2. 发明授权

US07226803B2 Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation 有权
标题翻译：具有超浅结的光电二极管，用于高量子效率CMOS图像传感器和形成方法
公开(公告)号：US07226803B2
公开(公告)日：2007-06-05
申请号：US11220670
申请日：2005-09-08
申请人： Chandra Mouli , Howard E. Rhodes , Richard A. Mauritzson
发明人： Chandra Mouli , Howard E. Rhodes , Richard A. Mauritzson
IPC分类号： H01L31/101
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14643 , H01L27/14689 , H01L31/0352 , H01L31/101
摘要： A pinned photodiode with an ultra-shallow highly-doped surface layer of a first conductivity type and a method of formation are disclosed. The ultra-shallow highly-doped surface layer has a thickness of about 100 Angstroms to about 500 Angstroms and a dopant concentration of about 5×1017 atoms per cm3 to about 1×1019 atoms per cm3. The ultra-shallow highly-doped surface layer is formed by diffusion of ions from a doped layer into the substrate or by a plasma doping process. The ultra-shallow pinned layer is in contact with a charge collection region of a second conductivity type.
摘要翻译：公开了具有第一导电类型的超浅高掺杂表面层和形成方法的钉扎光电二极管。超浅高掺杂表面层的厚度为约100埃至约500埃，掺杂剂浓度约5×10 17原子/ cm 3至约1×10 3原子/ SUP> 19个/ cm 3原子/ cm 3。超浅高掺杂表面层通过将离子从掺杂层扩散到衬底中或通过等离子体掺杂工艺形成。超浅钉扎层与第二导电类型的电荷收集区域接触。

3. 发明授权

US07662658B2 Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation 有权
标题翻译：具有超浅结的光电二极管，用于高量子效率CMOS图像传感器和形成方法
公开(公告)号：US07662658B2
公开(公告)日：2010-02-16
申请号：US11783040
申请日：2007-04-05
申请人： Chandra Mouli , Howard E. Rhodes , Richard A. Mauritzson
发明人： Chandra Mouli , Howard E. Rhodes , Richard A. Mauritzson
IPC分类号： H01L21/00
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14643 , H01L27/14689 , H01L31/0352 , H01L31/101
摘要： A pinned photodiode with an ultra-shallow highly-doped surface layer of a first conductivity type and a method of formation are disclosed. The ultra-shallow highly-doped surface latter has a thickness of about 100 Angstroms to about 500 Angstroms and a dopant concentration of about 5×1017 atoms per cm3 to about 1×1019 atoms per cm3. The ultra-shallow highly-doped surface layer is formed by diffusion of ions from a doped layer into the substrate or by a plasma doping process. The ultra-shallow pinned layer is in contact with a charge collection region of a second conductivity type.
摘要翻译：公开了具有第一导电类型的超浅高掺杂表面层和形成方法的钉扎光电二极管。超浅高掺杂表面层的厚度为约100埃至约500埃，掺杂剂浓度为约5×10 17原子/ cm 3至约1×10 19原子/ cm 3。超浅高掺杂表面层通过将离子从掺杂层扩散到衬底中或通过等离子体掺杂工艺形成。超浅钉扎层与第二导电类型的电荷收集区域接触。

4. 发明授权

US07122408B2 Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation 有权
标题翻译：具有超浅结的光电二极管，用于高量子效率CMOS图像传感器和形成方法
公开(公告)号：US07122408B2
公开(公告)日：2006-10-17
申请号：US10648245
申请日：2003-08-27
申请人： Chandra Mouli , Howard E. Rhodes , Richard A. Mauritzson
发明人： Chandra Mouli , Howard E. Rhodes , Richard A. Mauritzson
IPC分类号： H01L21/332 , H01L21/338
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14643 , H01L27/14689 , H01L31/0352 , H01L31/101
摘要： A pinned photodiode with an ultra-shallow highly-doped surface layer of a first conductivity type and a method of formation are disclosed. The ultra-shallow highly-doped surface layer has a thickness of about 100 Angstroms to about 500 Angstroms and a dopant concentration of about 5×1017 atoms per cm3 to about 1×1019 atoms per cm3. The ultra-shallow highly-doped surface layer is formed by diffusion of ions from a doped layer into the substrate or by a plasma doping process. The ultra-shallow pinned layer is in contact with a charge collection region of a second conductivity type.
摘要翻译：公开了具有第一导电类型的超浅高掺杂表面层和形成方法的钉扎光电二极管。超浅高掺杂表面层的厚度为约100埃至约500埃，掺杂剂浓度约5×10 17原子/ cm 3至约1×10 3原子/ SUP> 19个/ cm 3原子/ cm 3。超浅高掺杂表面层通过将离子从掺杂层扩散到衬底中或通过等离子体掺杂工艺形成。超浅钉扎层与第二导电类型的电荷收集区域接触。

5. 发明授权

US07002231B2 Barrier regions for image sensors 有权
标题翻译：图像传感器的屏障区域
公开(公告)号：US07002231B2
公开(公告)日：2006-02-21
申请号：US10768652
申请日：2004-02-02
申请人： Howard E. Rhodes , Richard A. Mauritzson , William T. Quinlin
发明人： Howard E. Rhodes , Richard A. Mauritzson , William T. Quinlin
IPC分类号： H01L31/00
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14645
摘要： Embodiments of the invention provide a barrier region for isolating devices of an image sensor. The barrier region comprises a charge accumulation region of a particular conductivity type in a substrate electrically connected to a voltage source terminal. The charge accumulation region is adjacent to at least one pixel cell of a pixel array. The charge accumulation region accumulates charge and prevents charge transference from a pixel cell or peripheral circuitry on one side of the barrier region to a pixel cell on another side of the barrier region.
摘要翻译：本发明的实施例提供了用于隔离图像传感器的装置的屏障区域。阻挡区域包括在电连接到电压源端子的基板中的特定导电类型的电荷累积区域。电荷累积区域与像素阵列的至少一个像素单元相邻。电荷累积区域累积电荷并防止从阻挡区域一侧上的像素单元或外围电路到屏障区域另一侧上的像素单元的电荷转移。

6. 发明授权

US08105864B2 Method of forming barrier regions for image sensors 有权
标题翻译：形成图像传感器的屏障区域的方法
公开(公告)号：US08105864B2
公开(公告)日：2012-01-31
申请号：US11600891
申请日：2006-11-17
申请人： Howard E. Rhodes , Richard A. Mauritzson , William T. Quinlin
发明人： Howard E. Rhodes , Richard A. Mauritzson , William T. Quinlin
IPC分类号： H01L21/00
CPC分类号： H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/1463 , H01L27/14645 , H01L27/14654 , H01L27/14689
摘要： Embodiments of the invention provide an image sensor that includes a barrier region for isolating devices. The image sensor comprises a substrate and an array of pixel cells formed on the substrate. Each pixel cell comprises a photo-conversion device. The array comprises a first pixel cell having a first configuration, a second pixel cell having a second configuration, and at least one barrier region formed between the first and second pixel cells for capturing and removing charge. The barrier region comprises a charge accumulation region of a particular conductivity type in a substrate electrically connected to a voltage source terminal. The charge accumulation region accumulates charge and prevents charge transference from a pixel cell or peripheral circuitry on one side of the barrier region to a pixel cell on another side of the barrier region.
摘要翻译：本发明的实施例提供了一种图像传感器，其包括用于隔离装置的阻挡区域。图像传感器包括衬底和形成在衬底上的像素单元的阵列。每个像素单元包括光转换装置。该阵列包括具有第一配置的第一像素单元，具有第二配置的第二像素单元，以及形成在第一和第二像素单元之间用于捕获和去除电荷的至少一个势垒区域。阻挡区域包括在电连接到电压源端子的基板中的特定导电类型的电荷累积区域。电荷累积区域累积电荷并防止从阻挡区域一侧上的像素单元或外围电路到屏障区域另一侧上的像素单元的电荷转移。

7. 发明授权

US07902624B2 Barrier regions for image sensors 有权
标题翻译：图像传感器的屏障区域
公开(公告)号：US07902624B2
公开(公告)日：2011-03-08
申请号：US11183853
申请日：2005-07-19
申请人： Howard E. Rhodes , Richard A. Mauritzson , William T. Quinlin
发明人： Howard E. Rhodes , Richard A. Mauritzson , William T. Quinlin
IPC分类号： H01L31/00
CPC分类号： H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/1463 , H01L27/14645 , H01L27/14654 , H01L27/14689
摘要： Embodiments of the invention provide an image sensor that includes a barrier region for isolating devices. The image sensor comprises a substrate and an array of pixel cells formed on the substrate. Each pixel cell comprises a photo-conversion device. The array comprises a first pixel cell having a first configuration, a second pixel cell having a second configuration, and at least one barrier region formed between the first and second pixel cells for capturing and removing charge. The barrier region comprises a charge accumulation region of a particular conductivity type in a substrate electrically connected to a voltage source terminal. The charge accumulation region accumulates charge and prevents charge transference from a pixel cell or peripheral circuitry on one side of the barrier region to a pixel cell on another side of the barrier region.
摘要翻译：本发明的实施例提供了一种图像传感器，其包括用于隔离装置的阻挡区域。图像传感器包括衬底和形成在衬底上的像素单元的阵列。每个像素单元包括光转换装置。该阵列包括具有第一配置的第一像素单元，具有第二配置的第二像素单元，以及形成在第一和第二像素单元之间用于捕获和去除电荷的至少一个势垒区域。阻挡区域包括在电连接到电压源端子的基板中的特定导电类型的电荷累积区域。电荷累积区域累积电荷并防止从阻挡区域一侧上的像素单元或外围电路到屏障区域另一侧上的像素单元的电荷转移。

8. 发明授权

US07190041B2 Well for CMOS imager 有权
标题翻译：对于CMOS成像器来说
公开(公告)号：US07190041B2
公开(公告)日：2007-03-13
申请号：US11025960
申请日：2005-01-03
申请人： Howard E. Rhodes , Inna Patrick , Richard A. Mauritzson
发明人： Howard E. Rhodes , Inna Patrick , Richard A. Mauritzson
IPC分类号： H01L29/00
CPC分类号： H01L27/1463 , H01L27/14601 , H01L27/14689
摘要： A well region of a first conductivity type located in a substrate of the first conductivity type and below about half the channel length of an electrically active portion of a transistor gate is disclosed. The well region is laterally displaced from a charge collection region of a second conductivity type of a pinned photodiode.
摘要翻译：公开了位于第一导电类型的衬底中并且低于晶体管栅极的电活性部分的沟道长度的约一半的第一导电类型的阱区。阱区域从第二导电类型的钉扎光电二极管的电荷收集区域横向移位。

9. 发明授权

US07847366B2 Well for CMOS imager 有权
标题翻译：对于CMOS成像器来说
公开(公告)号：US07847366B2
公开(公告)日：2010-12-07
申请号：US12402226
申请日：2009-03-11
申请人： Howard E. Rhodes , Inna Patrick , Richard A. Mauritzson
发明人： Howard E. Rhodes , Inna Patrick , Richard A. Mauritzson
IPC分类号： H01L29/00
CPC分类号： H01L27/1463 , H01L27/14601 , H01L27/14689
摘要： A well region of a first conductivity type located in a substrate of the first conductivity type and below about half the channel length of an electrically active portion of a transistor gate is disclosed. The well region is laterally displaced from a charge collection region of a second conductivity type of a pinned photodiode.
摘要翻译：公开了位于第一导电类型的衬底中并且低于晶体管栅极的电活性部分的沟道长度的约一半的第一导电类型的阱区。阱区域从第二导电类型的钉扎光电二极管的电荷收集区域横向移位。

10. 发明申请

US20090184345A1 CONTACTS FOR CMOS IMAGERS AND METHOD OF FORMATION 有权
标题翻译： CMOS图像接触器及其形成方法
公开(公告)号：US20090184345A1
公开(公告)日：2009-07-23
申请号：US12364433
申请日：2009-02-02
申请人： Xiaofeng Fan , Richard A. Mauritzson , Howard E. Rhodes
发明人： Xiaofeng Fan , Richard A. Mauritzson , Howard E. Rhodes
IPC分类号： H01L31/101 , H01L23/535 , H01L21/4763 , H01L31/18
CPC分类号： H01L27/14603 , H01L23/485 , H01L27/14636
摘要： Low leakage contacts on leakage sensitive areas of a CMOS imager, such as a floating diffusion region or a photodiode, are disclosed. At least one low leakage polysilicon contact is provided over a leakage sensitive area of a CMOS imager. The polysilicon contact comprises a polysilicon region in direct contact with the area of interest (the leakage sensitive area) and a metal region located over the polysilicon region. The polysilicon contact provides an improved ohmic contact with less leakage into the substrate. The polysilicon contact may be provided with other conventional metal contacts, which are employed in areas of the CMOS imager that do not require low leakage.
摘要翻译：公开了诸如浮动扩散区域或光电二极管的CMOS成像器的泄漏敏感区域上的低泄漏接触。在CMOS成像器的泄漏敏感区域上提供至少一个低泄漏多晶硅接触。多晶硅接触包括与感兴趣区域（泄漏敏感区域）直接接触的多晶硅区域和位于多晶硅区域上方的金属区域。多晶硅接触提供了改进的欧姆接触，而更少的泄漏到基板中。多晶硅接触可以设置有其他常规金属触点，其用于不需要低泄漏的CMOS成像器的区域。

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