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1. 发明授权

US07728384B2 Magnetic random access memory using single crystal self-aligned diode 有权
标题翻译：使用单晶自对准二极管的磁性随机存取存储器
公开(公告)号：US07728384B2
公开(公告)日：2010-06-01
申请号：US11420930
申请日：2006-05-30
申请人： Chiahua Ho , Yenhao Shih , Hsiang-Lan Lung
发明人： Chiahua Ho , Yenhao Shih , Hsiang-Lan Lung
IPC分类号： H01L23/62
CPC分类号： G11C11/16 , H01L27/224 , H01L43/08 , H01L43/12
摘要： A magnetic random access memory (MRAM) cell comprises a MRAM device and a single crystal self-aligned diode. The MRAM device and the single crystal self-aligned diode are connected through a contact. Only one metal line is positioned above the MRAM device of the MRAM cell. A first and second spacers positioned adjacent to the opposite sidewalls of the contact define the size of the single crystal self-aligned diode. A first and second metal silicide lines are positioned adjacent to the first and second spacers, respectively. The single crystal self-aligned diode, defined in a silicon substrate, includes a bottom implant (BI) region and a contact implant (CI) region. The CI region is surrounded by the BI region except for a side of the CI region that aligns the surface of the silicon substrate. A fabrication method, a read method, two programming methods for the MRAM cell are also disclosed.
摘要翻译：磁性随机存取存储器（MRAM）单元包括MRAM器件和单晶自对准二极管。 MRAM器件和单晶自对准二极管通过触点连接。在MRAM单元的MRAM器件上方只有一条金属线。靠近触点的相对侧壁定位的第一和第二间隔限定了单晶自对准二极管的尺寸。第一和第二金属硅化物线分别定位成与第一和第二间隔物相邻。限定在硅衬底中的单晶自对准二极管包括底部植入（BI）区域和接触植入（CI）区域。除了将硅衬底的表面对准的CI区域的一侧之外，CI区域被BI区域围绕。还公开了一种用于MRAM单元的制造方法，读取方法，两种编程方法。

2. 发明申请

US20070279978A1 MAGNETIC RANDOM ACCESS MEMORY USING SINGLE CRYSTAL SELF-ALIGNED DIODE 有权
标题翻译：使用单晶自对准二极管的磁性随机存取存储器
公开(公告)号：US20070279978A1
公开(公告)日：2007-12-06
申请号：US11420930
申请日：2006-05-30
申请人： Chiahua Ho , Yenhao Shih , Hsiang-Lan Lung
发明人： Chiahua Ho , Yenhao Shih , Hsiang-Lan Lung
IPC分类号： G11C11/14
CPC分类号： G11C11/16 , H01L27/224 , H01L43/08 , H01L43/12
摘要： A magnetic random access memory (MRAM) cell comprises a MRAM device and a single crystal self-aligned diode. The MRAM device and the single crystal self-aligned diode are connected through a contact. Only one metal line is positioned above the MRAM device of the MRAM cell. A first and second spacers positioned adjacent to the opposite sidewalls of the contact define the size of the single crystal self-aligned diode. A first and second metal silicide lines are positioned adjacent to the first and second spacers, respectively. The single crystal self-aligned diode, defined in a silicon substrate, includes a bottom implant (BI) region and a contact implant (CI) region. The CI region is surrounded by the BI region except for a side of the CI region that aligns the surface of the silicon substrate. A fabrication method, a read method, two programming methods for the MRAM cell are also disclosed.
摘要翻译：磁性随机存取存储器（MRAM）单元包括MRAM器件和单晶自对准二极管。 MRAM器件和单晶自对准二极管通过触点连接。在MRAM单元的MRAM器件上方只有一条金属线。靠近触点的相对侧壁定位的第一和第二间隔限定了单晶自对准二极管的尺寸。第一和第二金属硅化物线分别定位成与第一和第二间隔物相邻。限定在硅衬底中的单晶自对准二极管包括底部植入（BI）区域和接触植入（CI）区域。除了将硅衬底的表面对准的CI区域的一侧之外，CI区域被BI区域围绕。还公开了一种用于MRAM单元的制造方法，读取方法，两种编程方法。

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