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1. 发明申请

US20150028870A1 Two-Channel Magnetic Resonance Imaging 有权
标题翻译：双通道磁共振成像
公开(公告)号：US20150028870A1
公开(公告)日：2015-01-29
申请号：US14349419
申请日：2012-09-12
申请人： Chih-Chung Chen , Klaus Huber , Johannes Reinschke , Claus Seisenberger , Markus Vester , Christian Wünsch
发明人： Chih-Chung Chen , Klaus Huber , Johannes Reinschke , Claus Seisenberger , Markus Vester , Christian Wünsch
IPC分类号： G01R33/54 , A61B5/055 , A61B5/00 , G01R33/36
CPC分类号： G01R33/543 , A61B5/055 , A61B5/7225 , A61B5/7271 , G01R33/3614 , G01R33/365
摘要： A two-channel magnetic resonance tomography system is provided with a regulation circuit for an amplification system in order to be able to take into account different load situations of the MRI system in a flexible and efficient manner. It is thus possible to improve the MRI measurements greatly if the MRI system is set to the respective load situation beforehand by an idle state measurement. The adaptation may optionally also be carried out during the MRI measurement. Therefore, a multiplicity of completely different load situations may be taken into account in an optimized manner by the regulation circuit.
摘要翻译：双通道磁共振断层摄影系统具有用于放大系统的调节电路，以便能够以灵活和有效的方式考虑到MRI系统的不同负载情况。如果通过空闲状态测量将MRI系统预先设定为相应的负载状态，则可以大大改善MRI测量。也可以在MRI测量期间进行适应。因此，可以通过调节电路以优化的方式考虑多种完全不同的负载情况。

2. 发明授权

US09784811B2 Two-channel magnetic resonance imaging 有权
公开(公告)号：US09784811B2
公开(公告)日：2017-10-10
申请号：US14349419
申请日：2012-09-12
申请人： Chih-Chung Chen , Klaus Huber , Johannes Reinschke , Claus Seisenberger , Markus Vester , Christian Wünsch
发明人： Chih-Chung Chen , Klaus Huber , Johannes Reinschke , Claus Seisenberger , Markus Vester , Christian Wünsch
IPC分类号： G01R33/54 , G01R33/36 , A61B5/055 , A61B5/00
CPC分类号： G01R33/543 , A61B5/055 , A61B5/7225 , A61B5/7271 , G01R33/3614 , G01R33/365
摘要： A two-channel magnetic resonance tomography system is provided with a regulation circuit for an amplification system in order to be able to take into account different load situations of the MRI system in a flexible and efficient manner. It is thus possible to improve the MRI measurements greatly if the MRI system is set to the respective load situation beforehand by an idle state measurement. The adaptation may optionally also be carried out during the MRI measurement. Therefore, a multiplicity of completely different load situations may be taken into account in an optimized manner by the regulation circuit.

3. 发明授权

US08921238B2 Method for processing high-k dielectric layer 有权
标题翻译：高k电介质层的处理方法
公开(公告)号：US08921238B2
公开(公告)日：2014-12-30
申请号：US13235515
申请日：2011-09-19
申请人： Shao-Wei Wang , Yu-Ren Wang , Chien-Liang Lin , Wen-Yi Teng , Tsuo-Wen Lu , Chih-Chung Chen , Ying-Wei Yen
发明人： Shao-Wei Wang , Yu-Ren Wang , Chien-Liang Lin , Wen-Yi Teng , Tsuo-Wen Lu , Chih-Chung Chen , Ying-Wei Yen
IPC分类号： H01L21/31 , H01L21/3105 , H01L21/02
CPC分类号： H01L21/3105 , H01L21/02148 , H01L21/02178 , H01L21/02181 , H01L21/02183 , H01L21/02192 , H01L21/02197 , H01L21/0228
摘要： A method for processing a high-k dielectric layer includes the following steps. A semiconductor substrate is provided, and a high-k dielectric layer is formed thereon. The high-k dielectric layer has a crystalline temperature. Subsequently, a first annealing process is performed, and a process temperature of the first annealing process is substantially smaller than the crystalline temperature. A second annealing process is performed, and a process temperature of the second annealing process is substantially larger than the crystalline temperature.
摘要翻译：一种用于处理高k电介质层的方法包括以下步骤。提供半导体衬底，并且在其上形成高k电介质层。高k电介质层具有结晶温度。随后，进行第一退火处理，并且第一退火工艺的处理温度显着小于结晶温度。进行第二退火处理，第二退火处理的工艺温度显着大于结晶温度。

4. 发明授权

US08536038B2 Manufacturing method for metal gate using ion implantation 有权
标题翻译：使用离子注入的金属栅的制造方法
公开(公告)号：US08536038B2
公开(公告)日：2013-09-17
申请号：US13164781
申请日：2011-06-21
申请人： Shao-Wei Wang , Yu-Ren Wang , Chien-Liang Lin , Wen-Yi Teng , Tsuo-Wen Lu , Chih-Chung Chen , Ying-Wei Yen , Yu-Min Lin , Chin-Cheng Chien , Jei-Ming Chen , Chun-Wei Hsu , Chia-Lung Chang , Yi-Ching Wu , Shu-Yen Chan
发明人： Shao-Wei Wang , Yu-Ren Wang , Chien-Liang Lin , Wen-Yi Teng , Tsuo-Wen Lu , Chih-Chung Chen , Ying-Wei Yen , Yu-Min Lin , Chin-Cheng Chien , Jei-Ming Chen , Chun-Wei Hsu , Chia-Lung Chang , Yi-Ching Wu , Shu-Yen Chan
IPC分类号： H01L21/3205 , H01L21/425
CPC分类号： H01L29/7833 , H01L21/265 , H01L21/3215 , H01L21/823842 , H01L29/4966 , H01L29/517 , H01L29/665 , H01L29/66545 , H01L29/6659
摘要： A manufacturing method for a metal gate includes providing a substrate having at least a semiconductor device with a conductivity type formed thereon, forming a gate trench in the semiconductor device, forming a work function metal layer having the conductivity type and an intrinsic work function corresponding to the conductivity type in the gate trench, and performing an ion implantation to adjust the intrinsic work function of the work function metal layer to a target work function.
摘要翻译：一种金属栅极的制造方法，包括提供具有至少形成有导电类型的半导体器件的衬底，在该半导体器件中形成栅极沟槽，形成具有导电类型的功函数金属层和对应于栅极沟槽中的导电类型，并且执行离子注入以将功函数金属层的固有功函数调整到目标功函数。

5. 发明申请

US20130089443A1 Compressor 有权
标题翻译：压缩机
公开(公告)号：US20130089443A1
公开(公告)日：2013-04-11
申请号：US13253184
申请日：2011-10-05
申请人： Wen-Ho Yu , Fu-Rong Chen , Hung-Ming Liao , Chih-Chung Chen
发明人： Wen-Ho Yu , Fu-Rong Chen , Hung-Ming Liao , Chih-Chung Chen
IPC分类号： F04B17/03
CPC分类号： H02K3/38 , F04B39/06 , F04B39/12 , F04C18/356 , F04C23/008 , F04C29/0085 , F04C29/06 , F04C29/068 , H02K3/522
摘要： A power driven component inside a compressor is disposed with a stator and rotors. The stator has an iron core in a circular ring and a plurality of stator coils in concentrated winding manner. An interval vertically passing through is formed between adjacent stator coils. A cover body is formed on the stator and a shield member that is formed with an upper portion along each stator coil and bending curve portions at two sides of the upper portion. Each bending curve portion is extended toward the interval from the upper portion. A sealed cover portion is connected between the bending curve portions of the upper portion and correspondingly seals each interval to reduce noise of the compressor and oil circle rate.
摘要翻译：压缩机内部的动力驱动部件与定子和转子一起设置。定子具有圆环的铁芯和集中绕线的多个定子线圈。在相邻的定子线圈之间形成垂直通过的间隔。盖体形成在定子上，屏蔽构件形成有沿着每个定子线圈的上部和在上部两侧的弯曲曲线部分。每个弯曲曲线部分从上部向间隔延伸。密封盖部分连接在上部的弯曲曲线部分之间，并且相应地密封每个间隔以减小压缩机的噪音和油循环速率。

6. 发明申请

US20130072030A1 METHOD FOR PROCESSING HIGH-K DIELECTRIC LAYER 有权
标题翻译：用于处理高K介电层的方法
公开(公告)号：US20130072030A1
公开(公告)日：2013-03-21
申请号：US13235515
申请日：2011-09-19
申请人： Shao-Wei Wang , Yu-Ren Wang , Chien-Liang Lin , Wen-Yi Teng , Tsuo-Wen Lu , Chih-Chung Chen , Ying-Wei Yen
发明人： Shao-Wei Wang , Yu-Ren Wang , Chien-Liang Lin , Wen-Yi Teng , Tsuo-Wen Lu , Chih-Chung Chen , Ying-Wei Yen
IPC分类号： H01L21/314
CPC分类号： H01L21/3105 , H01L21/02148 , H01L21/02178 , H01L21/02181 , H01L21/02183 , H01L21/02192 , H01L21/02197 , H01L21/0228
摘要： A method for processing a high-k dielectric layer includes the following steps. A semiconductor substrate is provided, and a high-k dielectric layer is formed thereon. The high-k dielectric layer has a crystalline temperature. Subsequently, a first annealing process is performed, and a process temperature of the first annealing process is substantially smaller than the crystalline temperature. A second annealing process is performed, and a process temperature of the second annealing process is substantially larger than the crystalline temperature.
摘要翻译：一种用于处理高k电介质层的方法包括以下步骤。提供半导体衬底，并且在其上形成高k电介质层。高k电介质层具有结晶温度。随后，进行第一退火处理，并且第一退火工艺的处理温度显着小于结晶温度。进行第二退火处理，第二退火处理的工艺温度显着大于结晶温度。

7. 发明申请

US20120292720A1 METAL GATE STRUCTURE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：金属门结构及其制造方法
公开(公告)号：US20120292720A1
公开(公告)日：2012-11-22
申请号：US13109999
申请日：2011-05-18
申请人： Chih-Chung Chen , Yu-Ren Wang , Tsuo-Wen Lu , Wen-Yi Teng
发明人： Chih-Chung Chen , Yu-Ren Wang , Tsuo-Wen Lu , Wen-Yi Teng
IPC分类号： H01L29/772 , H01L21/336
CPC分类号： H01L29/4983 , H01L29/66545 , H01L29/7833 , H01L29/7843
摘要： A metal gate structure includes a high dielectric constant (high-K) gate dielectric layer, a metal gate having at least a U-shaped work function metal layer positioned on the high-K gate dielectric layer, and a silicon carbonitride (SiCN) seal layer positioned on sidewalls of the high-K gate dielectric layer and of the metal gate.
摘要翻译：金属栅极结构包括高介电常数（高K）栅极电介质层，至少具有位于高K栅极介电层上的U形功函数金属层的金属栅极和碳氮化硅（SiCN）密封层位于高K栅极电介质层和金属栅极的侧壁上。

8. 发明授权

US08203538B2 Sensor structure of touch panel and method for determining touch signal generating by sensor structure of touch panel 有权
标题翻译：触摸面板的传感器结构及触摸面板传感器结构产生触摸信号的方法
公开(公告)号：US08203538B2
公开(公告)日：2012-06-19
申请号：US12566676
申请日：2009-09-25
申请人： Chien-Ming Lin , Ming-Ta Hsieh , Chih-Chung Chen , Hsueh-Fang Yin , Chia-Lin Liu
发明人： Chien-Ming Lin , Ming-Ta Hsieh , Chih-Chung Chen , Hsueh-Fang Yin , Chia-Lin Liu
IPC分类号： G06F3/044
CPC分类号： G06F3/044
摘要： A sensor structure of a touch panel and a method of determining a touch signal generated by the same are disclosed. The sensor structure includes a plurality of sensor lines disposed on a surface of a substrate, and a control circuit electrically connected to the sensor lines. Each of the sensor lines has a plurality of conductive pads and a conductive line electrically connected the conductive pads. The control circuit receives a touch signal from one of the sensor lines. The touch signal is resulting from a touch capacitance generated between a touch and one of the conductive pads of the sensor line. The control circuit calculates the position of the touch based on the touch capacitance. In addition, the touch capacitance generated by a conductive pad close to the control circuit is larger than the touch capacitance generated by another conductive pad further away from the control circuit.
摘要翻译：公开了触摸面板的传感器结构和确定由其产生的触摸信号的方法。传感器结构包括设置在基板的表面上的多个传感器线以及与传感器线电连接的控制电路。每个传感器线具有多个导电焊盘，并且导电线与导电焊盘电连接。控制电路接收来自传感器线之一的触摸信号。触摸信号是由触摸和传感器线路的一个导电焊盘之间产生的触摸电容产生的。控制电路基于触摸电容来计算触摸的位置。此外，靠近控制电路的导电焊盘产生的触摸电容大于远离控制电路的另一个导电焊盘产生的触摸电容。

9. 外观设计

USD659733S1 Webcam 有权
公开(公告)号：USD659733S1
公开(公告)日：2012-05-15
申请号：US29396230
申请日：2011-06-28
申请人： Chih-Chung Chen
设计人： Chih-Chung Chen

10. 外观设计

USD648319S1 Wireless speaker 有权
标题翻译：无线扬声器
公开(公告)号：USD648319S1
公开(公告)日：2011-11-08
申请号：US29381556
申请日：2010-12-20
申请人： Chih-Chung Chen
设计人： Chih-Chung Chen

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