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1. 发明授权

US09461263B2 Organic light emitting display apparatus and method of manufacturing the same 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US09461263B2
公开(公告)日：2016-10-04
申请号：US13676707
申请日：2012-11-14
申请人： Chun-Gi You , Joon-Hoo Choi , Jong-Hyun Park , Kyung-Hoon Park , Jeong-Hwan Kim , Seong-Kweon Heo
发明人： Chun-Gi You , Joon-Hoo Choi , Jong-Hyun Park , Kyung-Hoon Park , Jeong-Hwan Kim , Seong-Kweon Heo
IPC分类号： H01L27/32 , H01L51/50 , H01L51/52
CPC分类号： H01L51/5092 , H01L27/3248 , H01L27/326 , H01L27/3265 , H01L51/5206 , H01L51/5212 , H01L2251/5392
摘要： The organic light emitting display apparatus includes a substrate; a buffer film on the substrate, the buffer film including a via hole, a thin film transistor (TFT) on the buffer film, the TFT including an active layer, a gate electrode, a source electrode, and a drain electrode, a first electrode electrically connected to one of the source electrode and the drain electrode and corresponding to the via hole; an intermediate layer on the first electrode, the intermediate layer including an organic emission layer, and a second electrode on the intermediate layer.
摘要翻译：有机发光显示装置包括：基板; 衬底上的缓冲膜，缓冲膜包括通孔，缓冲膜上的薄膜晶体管（TFT），包括有源层的TFT，栅电极，源电极和漏电极，第一电极电连接到源电极和漏电极中的一个并对应于通孔; 所述第一电极上的中间层，所述中间层包括有机发射层，以及在所述中间层上的第二电极。

2. 发明授权

US08754414B2 Organic light-emitting display device and method of manufacturing the same 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US08754414B2
公开(公告)日：2014-06-17
申请号：US13337569
申请日：2011-12-27
申请人： Sang-Ho Moon , Joon-Hoo Choi , Chun-Gi You , Kyu-Sik Cho , Jong-Hyun Park
发明人： Sang-Ho Moon , Joon-Hoo Choi , Chun-Gi You , Kyu-Sik Cho , Jong-Hyun Park
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00
CPC分类号： H01L51/5271 , H01L27/3248 , H01L27/326
摘要： An OLED device includes an active layer on a substrate; a first insulating layer covering the active layer, and including a first opening and a first insulation island in the first opening, separated from an inner surface of the first opening; a gate electrode on the first insulating layer including gate bottom and top electrodes; a pixel electrode on the first insulation island on the same layer as the gate bottom electrode; source and drain electrodes insulated from the gate electrode and electrically connected to the active layer; a second insulating layer between the gate and the source and drain electrodes, and including a second opening exposing the pixel electrode; a light-reflecting portion in the openings, and surrounding the pixel electrode; an intermediate layer on the pixel electrode and including an organic emissive layer; and an opposite electrode facing the pixel electrode with the intermediate layer interposed between them.
摘要翻译： OLED器件包括在衬底上的有源层; 覆盖所述有源层的第一绝缘层，并且包括在所述第一开口中的与所述第一开口的内表面分离的第一开口和第一绝缘岛; 包括栅极底部和顶部电极的第一绝缘层上的栅电极; 在与栅极底部电极相同的层上的第一绝缘岛上的像素电极; 源极和漏极与栅电极绝缘并电连接到有源层; 栅极和源极和漏极之间的第二绝缘层，并且包括暴露像素电极的第二开口; 在所述开口中的光反射部分，并围绕所述像素电极; 像素电极上的中间层，并且包括有机发光层; 以及面对像素电极的相对电极，其间插入中间层。

3. 发明申请

US20130032803A1 ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US20130032803A1
公开(公告)日：2013-02-07
申请号：US13337569
申请日：2011-12-27
申请人： Sang-Ho Moon , Joon-Hoo Choi , Chun-Gi You , Kyu-Sik Cho , Jong-Hyun Park
发明人： Sang-Ho Moon , Joon-Hoo Choi , Chun-Gi You , Kyu-Sik Cho , Jong-Hyun Park
IPC分类号： H01L33/08 , H01L51/56 , H01L33/16
CPC分类号： H01L51/5271 , H01L27/3248 , H01L27/326
摘要： An OLED device includes an active layer on a substrate; a first insulating layer covering the active layer, and including a first opening and a first insulation island in the first opening, separated from an inner surface of the first opening; a gate electrode on the first insulating layer including gate bottom and top electrodes; a pixel electrode on the first insulation island on the same layer as the gate bottom electrode; source and drain electrodes insulated from the gate electrode and electrically connected to the active layer; a second insulating layer between the gate and the source and drain electrodes, and including a second opening exposing the pixel electrode; a light-reflecting portion in the openings, and surrounding the pixel electrode; an intermediate layer on the pixel electrode and including an organic emissive layer; and an opposite electrode facing the pixel electrode with the intermediate layer interposed between them.
摘要翻译： OLED器件包括在衬底上的有源层; 覆盖所述有源层的第一绝缘层，并且包括在所述第一开口中的与所述第一开口的内表面分离的第一开口和第一绝缘岛; 包括栅极底部和顶部电极的第一绝缘层上的栅电极; 在与栅极底部电极相同的层上的第一绝缘岛上的像素电极; 源极和漏极与栅电极绝缘并电连接到有源层; 栅极和源极和漏极之间的第二绝缘层，并且包括暴露像素电极的第二开口; 在所述开口中的光反射部分，并围绕所述像素电极; 像素电极上的中间层，并且包括有机发光层; 以及面对像素电极的相对电极，其间插入中间层。

4. 发明授权

US08168981B2 Display substrate having stepped data line and a liquid crystal display device having the same 有权
标题翻译：具有阶梯式数据线的显示基板和具有该数据线的液晶显示装置
公开(公告)号：US08168981B2
公开(公告)日：2012-05-01
申请号：US12346969
申请日：2008-12-31
申请人： Seong-Kweon Heo , Chun-Gi You
发明人： Seong-Kweon Heo , Chun-Gi You
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L27/124
摘要： A display substrate includes; a gate line disposed on a substrate, a first insulating layer disposed on the substrate including the gate line, the first insulating layer including an opening part extended in a direction crossing the gate line, a data line disposed on the first insulating layer and an inner surface of the opening part, the data line extending in a direction substantially parallel with an extension direction of the opening part, a protective layer disposed on the first insulating layer and the data line, a switching element electrically connected to the gate line and the data line and a pixel electrode electrically connected to the switching element.
摘要翻译：显示基板包括：设置在基板上的栅极线，设置在包括栅极线的基板上的第一绝缘层，第一绝缘层包括沿与栅极线交叉的方向延伸的开口部，布置在第一绝缘层上的数据线和内部所述数据线在与所述开口部的延伸方向大致平行的方向上延伸，所述保护层配置在所述第一绝缘层和所述数据线上，所述开关元件电连接到所述栅极线和所述数据线和与开关元件电连接的像素电极。

5. 发明授权

US07888674B2 Thin-film transistor substrate and method of manufacturing the same 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US07888674B2
公开(公告)日：2011-02-15
申请号：US12605647
申请日：2009-10-26
申请人： Seong-Kweon Heo , Chun-Gi You
发明人： Seong-Kweon Heo , Chun-Gi You
IPC分类号： H01L29/04
CPC分类号： H01L27/124 , H01L27/1255 , H01L27/1288
摘要： A thin-film transistor substrate includes a gate line, a capacitor dielectric layer, a gate insulation layer, an active pattern, a data line, a protection layer, and a pixel electrode. The gate wiring including a gate electrode, a lower storage electrode, and a gate metal pad is disposed on a substrate. The capacitor dielectric layer is disposed on the lower storage electrode and the gate insulation layer is disposed on the substrate. The active pattern includes an active layer and a dummy active layer disposed on the gate insulation layer in a gate electrode region and a gate metal pad region, respectively. A portion of the upper storage electrode is disposed on the capacitor dielectric layer exposed through a first contact hole in the gate insulation layer.
摘要翻译：薄膜晶体管基板包括栅极线，电容器电介质层，栅极绝缘层，有源图案，数据线，保护层和像素电极。包括栅电极，下存储电极和栅极金属焊盘的栅极布线设置在基板上。电容器电介质层设置在下部存储电极上，栅极绝缘层设置在基板上。有源图案包括分别设置在栅极电极区域和栅极金属焊盘区域中的栅极绝缘层上的有源层和伪有源层。上部存储电极的一部分设置在通过栅极绝缘层中的第一接触孔露出的电容器电介质层上。

6. 发明授权

US07608493B2 Thin-film transistor substrate and method of manufacturing the same 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US07608493B2
公开(公告)日：2009-10-27
申请号：US11944010
申请日：2007-11-21
申请人： Seong-Kweon Heo , Chun-Gi You
发明人： Seong-Kweon Heo , Chun-Gi You
IPC分类号： H01L21/00
CPC分类号： H01L27/124 , H01L27/1255 , H01L27/1288
摘要： A thin-film transistor substrate includes a gate line, a capacitor dielectric layer, a gate insulation layer, an active pattern, a data line, a protection layer, and a pixel electrode. The gate wiring including a gate electrode, a lower storage electrode, and a gate metal pad is disposed on a substrate. The capacitor dielectric layer is disposed on the lower storage electrode and the gate insulation layer is disposed on the substrate. The active pattern includes an active layer and a dummy active layer disposed on the gate insulation layer in a gate electrode region and a gate metal pad region, respectively. A portion of the upper storage electrode is disposed on the capacitor dielectric layer exposed through a first contact hole in the gate insulation layer.
摘要翻译：薄膜晶体管基板包括栅极线，电容器电介质层，栅极绝缘层，有源图案，数据线，保护层和像素电极。包括栅电极，下存储电极和栅极金属焊盘的栅极布线设置在基板上。电容器电介质层设置在下部存储电极上，栅极绝缘层设置在基板上。有源图案包括分别设置在栅极电极区域和栅极金属焊盘区域中的栅极绝缘层上的有源层和伪有源层。上部存储电极的一部分设置在通过栅极绝缘层中的第一接触孔露出的电容器电介质层上。

7. 发明授权

US07560316B2 Thin film transistor panel and manufacturing method thereof 失效
标题翻译：薄膜晶体管面板及其制造方法
公开(公告)号：US07560316B2
公开(公告)日：2009-07-14
申请号：US11871027
申请日：2007-10-11
申请人： Seong-Kweon Heo , Chun-Gi You , Min-Hyuk Choi
发明人： Seong-Kweon Heo , Chun-Gi You , Min-Hyuk Choi
IPC分类号： H01L21/84 , H01L33/00
CPC分类号： G02F1/13458 , G02F1/133555 , G02F1/136227 , G02F2001/136222 , H01L27/12 , H01L27/124 , H01L27/1288
摘要： A thin film transistor array panel includes interconnection members interposed between the underlying gate pads made of an Al-containing metal and the overlying contact assistants made of a transparent conductor such as ITO thereon to prevent corrosion of Al due to ITO, or gate-layer signal transmission lines. Gate-layer signal transmission lines are directly connected to the data-layer signal transmission line to prevent corrosion of Al due to ITO in the thin film transistor array panel according to an embodiment of the present invention. The color filters are formed on the thin film transistor array panel to prevent misalignment between the two display panels so as to increase the aperture ratio.
摘要翻译：薄膜晶体管阵列面板包括插入在由含Al金属制成的下面的栅极焊盘之间的互连部件和由诸如ITO的透明导体制成的上覆触点辅助件，以防止由于ITO导致的Al的腐蚀或栅极层信号传输线。栅极层信号传输线直接连接到数据层信号传输线，以防止根据本发明实施例的薄膜晶体管阵列面板中由ITO引起的Al的腐蚀。滤色器形成在薄膜晶体管阵列面板上，以防止两个显示面板之间的不对准，从而增加开口率。

8. 发明申请

US20090026463A1 ARRAY SUBSTRATE FOR A DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：用于显示装置的阵列基板及其制造方法
公开(公告)号：US20090026463A1
公开(公告)日：2009-01-29
申请号：US12173476
申请日：2008-07-15
申请人： Jin-Hee Kang , Chun-Gi You , Seong-Kweon Heo
发明人： Jin-Hee Kang , Chun-Gi You , Seong-Kweon Heo
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L27/1248
摘要： An array substrate includes a thin-film transistor (TFT), a first insulation layer and a second insulation layer. The TFT is formed on the substrate. The TFT includes an active pattern, a gate metal pattern and a data metal pattern. The first insulation layer insulates the active pattern from the gate metal pattern. The second insulation layer is formed spaced apart by a predetermined width from at least one edge of the substrate. The second insulation layer insulates the gate metal pattern from the data metal pattern. Therefore, the second insulation layer is formed so that stress that is inflicted on a substrate may be decreased, thereby preventing deformation during a manufacturing process of the substrate.
摘要翻译：阵列衬底包括薄膜晶体管（TFT），第一绝缘层和第二绝缘层。在基板上形成TFT。 TFT包括有源图案，栅极金属图案和数据金属图案。第一绝缘层将活性图案与栅极金属图案绝缘。第二绝缘层与衬底的至少一个边缘间隔开预定的宽度。第二绝缘层将栅极金属图案与数据金属图案绝缘。因此，第二绝缘层形成为使得在基板上施加的应力可能降低，从而防止在基板的制造过程中的变形。

9. 发明授权

US07638373B2 Method of manufacturing a thin-film transistor substrate 失效
标题翻译：制造薄膜晶体管基板的方法
公开(公告)号：US07638373B2
公开(公告)日：2009-12-29
申请号：US12015822
申请日：2008-01-17
申请人： Seong-Kweon Heo , Chun-Gi You
发明人： Seong-Kweon Heo , Chun-Gi You
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/1255 , H01L29/66765
摘要： According to a method of manufacturing a thin-film transistor (TFT) substrate, a gate insulation layer, a semiconductor layer, an ohmic contact layer, and a data metal layer are sequentially formed on a substrate. A photoresist pattern is formed in a source electrode area and a drain electrode area. A data metal layer is etched using the photoresist pattern as an etch-stop layer to form a data wire including a source electrode and a drain electrode. A photoresist pattern is reflowed to cover a channel region between a source electrode and the drain electrode. An ohmic contact layer and the semiconductor layer are etched using the reflowed photoresist pattern as an etch-stop layer to form an active pattern including an ohmic contact pattern and a semiconductor pattern. The reflowed photoresist pattern is etched back to expose a portion of the ohmic contact pattern in the channel region. The ohmic contact pattern is etched using the etched-back photoresist pattern as an etch-stop layer.
摘要翻译：根据薄膜晶体管（TFT）基板的制造方法，在衬底上依次形成栅极绝缘层，半导体层，欧姆接触层和数据金属层。在源电极区域和漏电极区域中形成光致抗蚀剂图案。使用光致抗蚀剂图案作为蚀刻停止层蚀刻数据金属层，以形成包括源电极和漏电极的数据线。光致抗蚀剂图案被回流以覆盖源电极和漏电极之间的沟道区域。使用回流光致抗蚀剂图案作为蚀刻停止层来蚀刻欧姆接触层和半导体层，以形成包括欧姆接触图案和半导体图案的有源图案。回流的光致抗蚀剂图案被回蚀以暴露通道区域中的欧姆接触图案的一部分。使用蚀刻后的光致抗蚀剂图案作为蚀刻停止层来蚀刻欧姆接触图案。

10. 发明申请

US20080284932A1 THIN FILM TRANSISTOR SUBSTRATE AND LIQUID CRYSTAL DISPLAY DEVICE COMPRISING THE SAME 审中-公开
标题翻译：薄膜晶体管衬底和包含其的液晶显示器件
公开(公告)号：US20080284932A1
公开(公告)日：2008-11-20
申请号：US11832950
申请日：2007-08-02
申请人： Seong-Kweon Heo , Chun-Gi You
发明人： Seong-Kweon Heo , Chun-Gi You
IPC分类号： G02F1/136 , H01L21/28 , H01L29/08
CPC分类号： G02F1/133555 , G02F1/1362
摘要： A thin film transistor including an insulating plate, a thin film transistor formed on the insulating plate, a first insulating layer formed on the insulating plate having the thin film transistor, a reflecting electrode formed on at least a portion of the first insulating layer, and a transparent electrode formed on at least a portion of the first insulating layer and on at least a portion of the reflecting electrode is disclosed. Up to about 85% of a total area of the transparent electrode overlaps with the reflecting electrode. About 10% to about 85% of the total area of the transparent electrode may overlap with the reflecting electrode. About 10% to about 20% of the total area of the transparent electrode may overlap with the reflecting electrode. About 40% to about 50% of the total area of the transparent electrode may overlap with the reflecting electrode. About 75% to about 85% of the total area of the transparent electrode may overlap with the reflecting electrode. Up to about 75% of a total area of the reflecting electrode overlaps with the transparent electrode. The first insulating layer includes an inorganic layer and an organic layer formed on the inorganic layer. At least a portion of the first insulating layer has an embossed surface.
摘要翻译：一种薄膜晶体管，包括绝缘板，形成在绝缘板上的薄膜晶体管，形成在具有薄膜晶体管的绝缘板上的第一绝缘层，形成在第一绝缘层的至少一部分上的反射电极，以及公开了形成在第一绝缘层的至少一部分上以及反射电极的至少一部分上的透明电极。高达约85％的透明电极的总面积与反射电极重叠。透明电极的总面积的约10％〜约85％可能与反射电极重叠。透明电极总面积的约10％至约20％可能与反射电极重叠。透明电极的总面积的约40％至约50％可能与反射电极重叠。透明电极的总面积的约75％至约85％可能与反射电极重叠。高达约75％的反射电极的总面积与透明电极重叠。第一绝缘层包括无机层和形成在无机层上的有机层。第一绝缘层的至少一部分具有压花表面。

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