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1. 发明授权

US09159434B2 Bit line bias circuit with varying voltage drop 有权
标题翻译：位线偏置电路具有变化的电压降
公开(公告)号：US09159434B2
公开(公告)日：2015-10-13
申请号：US13458485
申请日：2012-04-27
申请人： Chung-Kuang Chen , Han-Sung Chen , Chun-Hsiung Hung
发明人： Chung-Kuang Chen , Han-Sung Chen , Chun-Hsiung Hung
IPC分类号： G11C16/06 , G11C11/34 , G11C16/26 , G11C7/06 , G11C16/24 , G11C7/12
CPC分类号： G11C16/26 , G11C7/06 , G11C7/065 , G11C7/12 , G11C16/24
摘要： A bit line bias circuit of a memory architecture includes a varying voltage drop. In some embodiments, the voltage drop can depend on the threshold voltage of the memory cell selected to be read, or on the sense current flowing through the memory cell selected to be read.
摘要翻译：存储器架构的位线偏置电路包括变化的电压降。在一些实施例中，电压降可以取决于选择要读取的存储器单元的阈值电压，或取决于流经选择读取的存储器单元的检测电流。

2. 发明授权

US08879332B2 Flash memory with read tracking clock and method thereof 有权
标题翻译：具有读追踪时钟的闪存及其方法
公开(公告)号：US08879332B2
公开(公告)日：2014-11-04
申请号：US13370833
申请日：2012-02-10
申请人： Chung-Kuang Chen , Han-Sung Chen , Chun-Hsiung Hung
发明人： Chung-Kuang Chen , Han-Sung Chen , Chun-Hsiung Hung
IPC分类号： G11C16/06
CPC分类号： G11C16/28 , G11C16/06
摘要： The configurations of a flash memory having a read tracking clock and method thereof are provided. The proposed flash memory includes a first and a second storage capacitors, a first current source providing a first current flowing through the first storage capacitor, a second current source providing a second current flowing through the second storage capacitor, and a comparator electrically connected to the first and the second current sources, and sending out a signal indicating a developing time being accomplished when the second current is larger than the first current.
摘要翻译：提供具有读追踪时钟及其方法的闪速存储器的配置。所提出的闪速存储器包括第一和第二存储电容器，提供流过第一存储电容器的第一电流的第一电流源，提供流过第二存储电容器的第二电流的第二电流源，以及电连接到第一和第二电流源，并且当第二电流大于第一电流时发出指示正在完成的显影时间的信号。

3. 发明授权

US08736358B2 Current source with tunable voltage-current coefficient 有权
标题翻译：具有可调电压 - 电流系数的电流源
公开(公告)号：US08736358B2
公开(公告)日：2014-05-27
申请号：US12840943
申请日：2010-07-21
申请人： Chung-Kuang Chen , Han-Sung Chen , Chun-Hsiung Hung
发明人： Chung-Kuang Chen , Han-Sung Chen , Chun-Hsiung Hung
IPC分类号： G05F1/10 , G05F3/02
CPC分类号： G05F1/561
摘要： A current source providing an output current with a fixed current range includes a bias circuit, a resistor, a current mirror, and a controller. The bias circuit provides a first voltage weighted with a first tunable coefficient and a second voltage weighted with a second tunable coefficient. The resistor has a tunable resistance for determining a bias current according to a voltage difference between the first and the second voltages and the tunable resistance. The current mirror generates the output current according to the bias current. The controller adjusts the tunable resistance and one of the first and the second tunable coefficients to achieve a voltage-current coefficient with different values, while the bias current and the output current are kept within a fixed current range.
摘要翻译：提供具有固定电流范围的输出电流的电流源包括偏置电路，电阻器，电流镜和控制器。偏置电路提供用第一可调系数和第二可调系数加权的第二电压加权的第一电压。电阻器具有根据第一和第二电压之间的电压差以及可调谐电阻来确定偏置电流的可调电阻。电流镜根据偏置电流产生输出电流。控制器调节可调谐电阻和第一和第二可调谐系数之一，以实现具有不同值的电压 - 电流系数，而偏置电流和输出电流保持在固定电流范围内。

4. 发明授权

US08537630B2 Memory program discharge circuit of bit lines with multiple discharge paths 有权
标题翻译：具有多个放电路径的位线的存储器程序放电电路
公开(公告)号：US08537630B2
公开(公告)日：2013-09-17
申请号：US13722530
申请日：2012-12-20
申请人： Chung-Kuang Chen , Han-Sung Chen , Chun-Hsiung Hung
发明人： Chung-Kuang Chen , Han-Sung Chen , Chun-Hsiung Hung
IPC分类号： G11C7/00
CPC分类号： G11C7/12 , G11C7/06 , G11C16/24 , G11C16/26 , Y10T29/49117
摘要： A memory integrated circuit has an array of nonvolatile memory cells, bit lines accessing the array of nonvolatile memory cells, and bit line discharge circuitry. The bit lines have multiple discharge paths for a bit line at a same time, during a program operation.
摘要翻译：存储器集成电路具有非易失性存储单元的阵列，访问非易失性存储单元阵列的位线和位线放电电路。在编程操作期间，位线在同一时间对于位线具有多个放电路径。

5. 发明申请

US20130107637A1 Memory Program Discharge Circuit of Bit Lines With Multiple Discharge Paths 有权
标题翻译：具有多个放电路径的位线的存储器程序放电电路
公开(公告)号：US20130107637A1
公开(公告)日：2013-05-02
申请号：US13722530
申请日：2012-12-20
申请人： Chung-Kuang Chen , Han-Sung Chen , Chun-Hsiung Hung
发明人： Chung-Kuang Chen , Han-Sung Chen , Chun-Hsiung Hung
IPC分类号： G11C7/12 , G11C7/06
CPC分类号： G11C7/12 , G11C7/06 , G11C16/24 , G11C16/26 , Y10T29/49117
摘要： A memory integrated circuit has an array of nonvolatile memory cells, bit lines accessing the array of nonvolatile memory cells, and bit line discharge circuitry. The bit lines have multiple discharge paths for a bit line at a same time, during a program operation.
摘要翻译：存储器集成电路具有非易失性存储单元的阵列，访问非易失性存储单元阵列的位线和位线放电电路。在编程操作期间，位线在同一时间对于位线具有多个放电路径。

6. 发明授权

US08429335B2 Memory device and operation method to selectively invert data 有权
标题翻译：存储器件和操作方法选择性地反转数据
公开(公告)号：US08429335B2
公开(公告)日：2013-04-23
申请号：US12577891
申请日：2009-10-13
申请人： Chung-Kuang Chen , Han-Sung Chen , Chun-Hsiung Hung
发明人： Chung-Kuang Chen , Han-Sung Chen , Chun-Hsiung Hung
IPC分类号： G06F12/00
CPC分类号： G11C16/10 , G11C11/56 , G11C11/5642 , G11C2211/5647
摘要： Provided is a MLC (Multi-level cell) memory device, comprising: a memory array, including a plurality of groups each storing a plurality of bits; and an inverse bit storage section, storing a first inverse bit data including a plurality of inverse bits, the plurality of bits in the same group in the memory array being related to a respective inverse bit.
摘要翻译：提供了一种MLC（多级单元）存储器件，包括：存储器阵列，包括多个组，每组存储多个位; 以及反比特存储部，存储包括多个反比特的第一反比特数据，存储器阵列中的同一组中的多个比特与相应的反比特相关。

7. 发明申请

US20120319756A1 Clock Integrated Circuit 有权
标题翻译：时钟集成电路
公开(公告)号：US20120319756A1
公开(公告)日：2012-12-20
申请号：US13596953
申请日：2012-08-28
申请人： Chung-Kuang Chen , Chun-Hsiung Hung , Han-Sung Chen
发明人： Chung-Kuang Chen , Chun-Hsiung Hung , Han-Sung Chen
IPC分类号： H03L5/00
CPC分类号： H03K19/018528 , G05F3/02 , G06F1/04 , G06F1/08 , G06F1/10 , G06F1/12 , H03K19/0175 , H03L5/00
摘要： The clock circuit of an integrated circuit operates with variations such as temperature, ground noise, and power noise. Various aspects of an improved clock integrated circuit address one or more of the variations in temperature, ground noise, and power noise.
摘要翻译：集成电路的时钟电路具有诸如温度，接地噪声和功率噪声的变化。改进的时钟集成电路的各个方面解决了温度，地面噪声和功率噪声中的一个或多个变化。

8. 发明申请

US20110157986A1 MEMORY AND OPERATING METHOD THEREOF 有权
标题翻译：其记忆和操作方法
公开(公告)号：US20110157986A1
公开(公告)日：2011-06-30
申请号：US13041642
申请日：2011-03-07
申请人： CHUNG-KUANG CHEN , Han-Sung Chen , Chun-Hsiung Hung
发明人： CHUNG-KUANG CHEN , Han-Sung Chen , Chun-Hsiung Hung
IPC分类号： G11C16/06
CPC分类号： G11C29/02 , G11C8/08 , G11C29/021 , G11C29/028 , G11C2029/1202
摘要： A memory and an operating method thereof are provided therein. When searching a boundary of a threshold voltage distribution of the memory, data errors resulted from tail bits of the memory would be corrected. Therefore, a sensing window could be broader, and the boundary of the threshold voltage distribution could be determined precisely.
摘要翻译：在其中提供存储器及其操作方法。当搜索存储器的阈值电压分布的边界时，将校正由存储器的尾部位产生的数据错误。因此，感测窗口可以更宽，并且可以精确地确定阈值电压分布的边界。

9. 发明申请

US20110085384A1 CURRENT SINK SYSTEM FOR SOURCE-SIDE SENSING 有权
标题翻译：用于源端感测的电流源系统
公开(公告)号：US20110085384A1
公开(公告)日：2011-04-14
申请号：US12833523
申请日：2010-07-09
申请人： CHUNG-KUANG CHEN , Han-Sung Chen , Chun-Hsiung Hung
发明人： CHUNG-KUANG CHEN , Han-Sung Chen , Chun-Hsiung Hung
IPC分类号： G11C16/06
CPC分类号： G11C16/26 , G11C7/062 , G11C7/067 , G11C2207/063
摘要： Source-side sensing techniques described herein determine the data value stored in a memory cell based on the difference in current between the read current from the source terminal of the memory cell and a sink current drawn from the read current. The sink current is drawn in response to the magnitude of a reference current provided by a reference current source such as a reference cell.
摘要翻译：基于来自存储单元的源极端子的读取电流与从读出电流抽取的吸收电流之间的电流差，确定存储单元中存储的源极侧感测技术。吸收电流响应于由参考电流源（例如参考单元）提供的参考电流的大小来绘制。

10. 发明授权

US07924614B2 Memory and boundary searching method thereof 有权
标题翻译：其内存及边界搜索方法
公开(公告)号：US07924614B2
公开(公告)日：2011-04-12
申请号：US12355962
申请日：2009-01-19
申请人： Chung-Kuang Chen , Han-Sung Chen , Chun-Hsiung Hung
发明人： Chung-Kuang Chen , Han-Sung Chen , Chun-Hsiung Hung
IPC分类号： G11C16/04
CPC分类号： G11C29/02 , G11C8/08 , G11C29/021 , G11C29/028 , G11C2029/1202
摘要： A memory and a boundary searching method thereof are provided therein. When searching a boundary of a threshold voltage distribution of the memory, data errors resulted from tail bits of the memory would be corrected. Therefore, a sensing window could be broader, and the boundary of the threshold voltage distribution could be determined precisely.
摘要翻译：其中提供了一种存储器及其边界搜索方法。当搜索存储器的阈值电压分布的边界时，将校正由存储器的尾部位产生的数据错误。因此，感测窗口可以更宽，并且可以精确地确定阈值电压分布的边界。

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