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1. 发明授权

US5610416A Avalanche photodiode with epitaxially regrown guard rings 失效
标题翻译：雪崩光电二极管外延重新生长保护环
公开(公告)号：US5610416A
公开(公告)日：1997-03-11
申请号：US389375
申请日：1995-02-16
申请人： Chung-Yi Su , Ghulam Hasnain , James N. Hollenhorst
发明人： Chung-Yi Su , Ghulam Hasnain , James N. Hollenhorst
IPC分类号： H01L31/107 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L31/1075
摘要： A SAM avalanche photodiode formed with an epitaxially regrown guard ring and a planar P-N junction defined between a cap layer and a multiplication layer. The multiplication layer is part of a multi-layer semiconductor platform having a conductivity opposite to the conductivity type of the cap layer, including a light absorption layer, a substrate and an intermediate layer. A second embodiment of the present invention is disclosed including a SAM avalanche photodiode having a guard ring with a variable distribution of impurity dopant concentrations. In addition, a third embodiment of the present invention is disclosed in which a narrow band gap layer completely covers the cap layer and a non-alloy metal contact is formed to completely cover the narrow band gap layer, forming a mirror junction. In this embodiment, incident light is shined through the substrate and reflected from the mirror junction, enhancing the absorption efficiency.
摘要翻译： SAM雪崩光电二极管形成有外延重新生长的保护环和在盖层和乘法层之间限定的平面P-N结。倍增层是具有与覆盖层的导电类型相反的导电性的多层半导体平台的一部分，包括光吸收层，衬底和中间层。公开了本发明的第二实施例，其包括具有杂质掺杂剂浓度可变分布的保护环的SAM雪崩光电二极管。此外，公开了本发明的第三实施例，其中窄带隙层完全覆盖盖层，并且形成非合金金属接触以完全覆盖窄带隙层，形成镜结。在本实施例中，入射光通过衬底照射并从镜结点反射，提高了吸收效率。

2. 发明授权

US5866936A Mesa-structure avalanche photodiode having a buried epitaxial junction 失效
标题翻译：具有掩埋外延结的Mesa结构雪崩光电二极管
公开(公告)号：US5866936A
公开(公告)日：1999-02-02
申请号：US831843
申请日：1997-04-01
申请人： Ghulam Hasnain , James N. Hollenhorst , Chung-Yi Su
发明人： Ghulam Hasnain , James N. Hollenhorst , Chung-Yi Su
IPC分类号： H01L21/22 , H01L31/00 , H01L31/107 , H01L29/861
CPC分类号： H01L31/1075
摘要： A mesa-structure avalanche photodiode in which a buffer region in the surface of the mesa structure effectively eliminates the sharply-angled, heavily doped part of the cap layer that existed adjacent the lightly-doped n-type multiplication layer and p-type guard ring before the buffer region was formed. This reduces electric field strength at the ends of the planar epitaxial P-N junction and prevents edge breakdown in this junction. The lateral extent of the guard ring is defined by a window formed in a masking layer prior to regrowth of the guard ring. This guard ring structure eliminates the need to perform additional processing steps to define the lateral extent of the guard ring and passivate the periphery of the guard ring.
摘要翻译：台面结构雪崩光电二极管，其中台面结构表面中的缓冲区域有效地消除了存在于轻掺杂n型倍增层和p型保护环附近的覆盖层的锐角重掺杂部分在缓冲区形成之前。这降低了在平面外延P-N结的端部处的电场强度，并防止在该结中的边缘击穿。保护环的横向范围由在保护环的再生长之前在掩模层中形成的窗口限定。该保护环结构消除了进行附加处理步骤以限定保护环的横向范围并钝化保护环的周边的需要。

3. 发明授权

US5843804A Method of making avalanche photodiodes with epitaxially-regrown guard rings 失效
标题翻译：用外延再生长的防护环制造雪崩光电二极管的方法
公开(公告)号：US5843804A
公开(公告)日：1998-12-01
申请号：US812465
申请日：1997-03-06
申请人： Chung-Yi Su , Ghulam Hasnain , James N. Hollenhorst
发明人： Chung-Yi Su , Ghulam Hasnain , James N. Hollenhorst
IPC分类号： H01L31/107 , H01L31/18
CPC分类号： H01L31/1075
摘要： A SAM avalanche photodiode formed with an epitaxially regrown guard ring and a planar P-N junction defined between a cap layer and a multiplication layer. The multiplication layer is part of a multi-layer semiconductor platform having a conductivity opposite to the conductivity type of the cap layer, including a light absorption layer, a substrate and an intermediate layer. A second embodiment of the present invention is disclosed including a SAM avalanche photodiode having a guard ring with a variable distribution of impurity dopant concentrations. In addition, a third embodiment of the present invention is disclosed in which a narrow band gap layer completely covers the cap layer and a non-alloy metal contact is formed to completely cover the narrow band gap layer, forming a mirror junction. In this embodiment, incident light is shined through the substrate and reflected from the mirror junction, enhancing the absorption efficiency.
摘要翻译： SAM雪崩光电二极管形成有外延重新生长的保护环和在盖层和乘法层之间限定的平面P-N结。倍增层是具有与覆盖层的导电类型相反的导电性的多层半导体平台的一部分，包括光吸收层，衬底和中间层。公开了本发明的第二实施例，其包括具有杂质掺杂剂浓度可变分布的保护环的SAM雪崩光电二极管。此外，公开了本发明的第三实施例，其中窄带隙层完全覆盖盖层，并且形成非合金金属接触以完全覆盖窄带隙层，形成镜结。在本实施例中，入射光通过衬底照射并从镜结点反射，提高了吸收效率。

4. 发明授权

US07586480B2 Hybrid pointing device 失效
标题翻译：混合指点装置
公开(公告)号：US07586480B2
公开(公告)日：2009-09-08
申请号：US11069341
申请日：2005-02-28
申请人： Todd Stephen Sachs , Jonah Alexander Harley , James N. Hollenhorst , Farid Matta
发明人： Todd Stephen Sachs , Jonah Alexander Harley , James N. Hollenhorst , Farid Matta
IPC分类号： G06F3/033
CPC分类号： G06F3/038 , G05G2009/04714 , G06F3/0338 , G06F3/03548 , G06F3/0485
摘要： An input device having a movable puck and display screen is disclosed. The puck is confined to move on a puck surface having a puck field of motion defined thereon. The puck field of motion is divided into a pointing region and a function region. A controller determines a position for the puck within the field of motion. The display screen displays a two-dimensional scene and a cursor that moves within the scene in a manner controlled by the position of the puck when the puck is in the pointing region. The controller causes the scene to change when the puck is in the function region. A deformable barrier that inhibits the movement of the puck into the function region can be used to prevent inadvertent changing of the display scene. The inhibition is overcome by a user applying additional force to the puck in a direction parallel to the surface.
摘要翻译：公开了一种具有可动盘和显示屏的输入装置。圆盘被限制在具有定义在其上的圆盘运动场的圆盘表面上移动。冰球运动区域分为指向区域和功能区域。控制器确定在运动场内的圆盘的位置。显示屏幕显示二维场景和光标，当游标位于指示区域中时，游标以由游戏者的位置控制的方式在场景内移动。当游丝在功能区域时，控制器会导致场景改变。可以使用抑制圆盘移动到功能区域中的可变形屏障来防止显示场景的无意改变。使用者通过在平行于表面的方向向圆盘施加额外的力来克服抑制。

5. 发明授权

US06858829B2 Avalanche photodiode array biasing device and avalanche photodiode structure 有权
标题翻译：雪崩光电二极管阵列偏置装置和雪崩光电二极管结构
公开(公告)号：US06858829B2
公开(公告)日：2005-02-22
申请号：US09885906
申请日：2001-06-20
申请人： Ken A. Nishimura , Brian E. Lemoff , James N. Hollenhorst
发明人： Ken A. Nishimura , Brian E. Lemoff , James N. Hollenhorst
IPC分类号： H01L27/146 , H01L31/02 , H01L31/107 , H01J40/14
CPC分类号： H01L31/107 , H01L27/14643 , H01L31/02027
摘要： A photodiode array includes a plurality of arrayed individual diode devices. The arrayed diode devices include at least one active photodiode and at least one reference diode. A bias control circuit for the array monitors operation of the reference diode at an applied first bias voltage and adjusts that applied first bias voltage until optimal reference diode operation is reached. A second bias voltage having predetermined relationship to the first bias voltage is applied to the active photodiode to optimally configure array operation. More specifically, an operational characteristic of the reference diode at the first bias voltage is monitored and compared to a reference value. As a result of this comparison, the circuit adjusts the applied first and second bias voltage in order to drive the reference diode measured characteristic to substantially match the reference value. The operational characteristic that is measured may comprise reference diode responsivity or reference diode output current, and may be based on either electrical or optical device operation. Each avalanche photodiode semiconductor structure may have a conventional reverse biased pn junction semiconductor structure providing a high field region as is well known in the art. An enhanced semiconductor structure may also be utilized wherein a heavily doped layer that is physically separate from the pn junction is also included to provide a source of charge carriers that are swept into the high field region.
摘要翻译：光电二极管阵列包括多个排列的独立二极管器件。阵列二极管器件包括至少一个有源光电二极管和至少一个参考二极管。用于阵列的偏置控制电路监视所施加的第一偏置电压下的参考二极管的操作，并调整所施加的第一偏置电压，直到达到最佳参考二极管操作。将具有与第一偏置电压具有预定关系的第二偏置电压施加到有源光电二极管以最佳地配置阵列操作。更具体地，监视第一偏置电压下的参考二极管的工作特性并将其与参考值进行比较。作为该比较的结果，电路调整所施加的第一和第二偏置电压，以驱动参考二极管测量的特性，使其基本上与参考值相匹配。测量的操作特性可以包括参考二极管响应度或参考二极管输出电流，并且可以基于电或光器件操作。每个雪崩光电二极管半导体结构可以具有常规的反向偏置pn结半导体结构，其提供本领域公知的高场区域。还可以使用增强的半导体结构，其中与pn结物理分离的重掺杂层也被包括在内，以提供扫描到高场区域中的电荷载流子源。

6. 发明授权

US5075749A Optical device including a grating 失效
标题翻译：光学装置包括光栅
公开(公告)号：US5075749A
公开(公告)日：1991-12-24
申请号：US680612
申请日：1991-04-01
申请人： Gou-Chung Chi , James N. Hollenhorst , Robert A. Morgan , Dirk J. Muehlner
发明人： Gou-Chung Chi , James N. Hollenhorst , Robert A. Morgan , Dirk J. Muehlner
IPC分类号： H01L31/0232 , H01L31/0236
CPC分类号： H01L31/0232 , H01L31/0236 , Y02E10/50
摘要： Substrate-supported optical device structures such as, e.g., quantum-well infrared detectors/detector arrays are provided with a grating for optical coupling. Preferred gratings are formed in a nonepitaxial layer which, preferably, consists of a material which is different from underlying semiconductor material. Conveniently, a grating pattern is formed by etching, with the underlying material serving as an etch stop. For example, on a GaAs--AlGaAs device, polycrystalline silicon can be deposited and etched in this fashion.
摘要翻译：基板支持的光学器件结构例如量子阱红外检测器/检测器阵列设置有用于光耦合的光栅。优选的光栅形成在非外延层中，其优选地由与下面的半导体材料不同的材料组成。方便地，通过蚀刻形成光栅图案，底层材料用作蚀刻停止。例如，在GaAs-AlGaAs器件上，可以以这种方式沉积和蚀刻多晶硅。

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