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1. 发明授权

US08350485B2 Modular LED light bulb 有权
标题翻译：模块化LED灯泡
公开(公告)号：US08350485B2
公开(公告)日：2013-01-08
申请号：US13073726
申请日：2011-03-28
申请人： Ghulam Hasnain
发明人： Ghulam Hasnain
IPC分类号： H05B39/06 , H05B1/02
CPC分类号： H05B33/0815 , F21K9/232 , F21K9/238 , F21K9/64 , F21V3/12 , F21V17/002 , F21V17/164 , F21V23/005 , F21V23/0442 , F21V23/0457 , F21V29/74 , F21V29/85 , F21V29/90 , F21Y2115/10 , H01L2224/48091 , H01L2224/48137 , H01L2224/73265 , H01L2924/181 , H05B33/0803 , H05B33/0869 , H01L2924/00014 , H01L2924/00012
摘要： An LED-based lighting device and method for making the same are disclosed. The lighting device includes an LED light source mounted on a heat sink, a power adaptor, and a controller. The power adaptor is configured to be interchangeable with a conventional incandescent bulb power adapter. The controller provides an average current to the LED light source when power is coupled to the device via the power adaptor. The average current causes the LED light source to generate light of a predetermined standard intensity that is substantially independent of variations in the LED light source from device to device. In one aspect of the invention, the LED light source includes a plurality of LEDs connected in series, the LEDs are bonded to the heat sink and connected to one another in series by wire bonds and to conducting traces on the heat sink.
摘要翻译：公开了一种基于LED的照明装置及其制造方法。照明装置包括安装在散热器上的LED光源，电源适配器和控制器。电源适配器配置为可与传统白炽灯电源适配器互换。当电源通过电源适配器耦合到设备时，控制器提供平均电流到LED光源。平均电流使得LED光源产生基本上与LED光源从器件到器件的变化无关的预定标准强度的光。在本发明的一个方面，LED光源包括串联连接的多个LED，LED被结合到散热器并且通过引线接合而彼此串联连接并且在散热片上导电迹线。

2. 发明授权

US07939839B2 Series connected segmented LED 有权
标题翻译：串联连接分段LED
公开(公告)号：US07939839B2
公开(公告)日：2011-05-10
申请号：US12208502
申请日：2008-09-11
申请人： Ghulam Hasnain
发明人： Ghulam Hasnain
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , H01L33/385 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light source and method for making the same are disclosed. The light source includes a substrate, and a light emitting structure that is divided into segments. The light emitting structure includes a first layer of semiconductor material of a first conductivity type deposited on the substrate, an active layer overlying the first layer, and a second layer of semiconductor material of an opposite conductivity type from the first conductivity type overlying the active layer. A barrier divides the light emitting structure into first and second segments that are electrically isolated from one another. A serial connection electrode connects the first layer in the first segment to the second layer in the second segment. A power contact is electrically connected to the second layer in the first segment, and a second power contact electrically connected to the first layer in the second segment.
摘要翻译：公开了一种光源及其制造方法。光源包括基板和被分割成段的发光结构。发光结构包括沉积在衬底上的第一导电类型的第一层半导体材料，覆盖第一层的有源层和覆盖有源层的第一导电类型的相反导电类型的第二半导体材料层。障碍物将发光结构分成彼此电隔离的第一和第二段。串联连接电极将第一段中的第一层连接到第二段中的第二层。电源触头电连接到第一段中的第二层，以及电连接到第二段中的第一层的第二电源触头。

3. 发明授权

US07915621B2 Inverted LED structure with improved light extraction 有权
标题翻译：倒立式LED结构，提高光强
公开(公告)号：US07915621B2
公开(公告)日：2011-03-29
申请号：US12779813
申请日：2010-05-13
申请人： Ghulam Hasnain
发明人： Ghulam Hasnain
IPC分类号： H01L21/02
CPC分类号： H01L33/20
摘要： A light source and method for fabricating the same are disclosed. The light source includes a substrate and a light emitting structure. The substrate has a first surface and a second surface, the second surface including a curved, convex surface with respect to the first surface of the substrate. The light emitting structure includes a first layer of a material of a first conductivity type overlying the first surface, an active layer overlying the first layer, the active layer generating light when holes and electrons recombine therein, and a second layer includes a material of a second conductivity type overlying the active layer and a second surface opposite to the first surface. A mirror layer overlies the light emitting structure.
摘要翻译：公开了一种光源及其制造方法。光源包括基板和发光结构。衬底具有第一表面和第二表面，第二表面包括相对于衬底的第一表面的弯曲的凸形表面。发光结构包括覆盖第一表面的第一导电类型的材料的第一层，覆盖第一层的有源层，当空穴和电子在其中复合时产生光的有源层，以及第二层包括覆盖有源层的第二导电类型和与第一表面相对的第二表面。镜面层覆盖发光结构。

4. 发明申请

US20050263780A1 Light emitting diodes with graded composition active regions 失效
公开(公告)号：US20050263780A1
公开(公告)日：2005-12-01
申请号：US11177670
申请日：2005-07-07
申请人： David Bour , Nathan Gardner , Werner Goetz , Stephen Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher Kocot , Mark Hueschen
发明人： David Bour , Nathan Gardner , Werner Goetz , Stephen Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher Kocot , Mark Hueschen
IPC分类号： H01L33/06 , H01L33/32 , H01L33/00
CPC分类号： H01L33/32 , H01L33/06
摘要： A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region.

5. 发明授权

US06534331B2 Method for making a vertical-cavity surface emitting laser with improved current confinement 失效
标题翻译：用于制造具有改进的电流限制的垂直腔表面发射激光器的方法
公开(公告)号：US06534331B2
公开(公告)日：2003-03-18
申请号：US09912803
申请日：2001-07-24
申请人： Andrew Shuh-Huei Liao , Ghulam Hasnain , Chihping Kuo , Hao-Chung Kuo , Zhiqing Shi , Minh Ngoc Trieu
发明人： Andrew Shuh-Huei Liao , Ghulam Hasnain , Chihping Kuo , Hao-Chung Kuo , Zhiqing Shi , Minh Ngoc Trieu
IPC分类号： H01L2100
CPC分类号： H01S5/18308 , H01L33/105 , H01L33/145 , H01S5/2059
摘要： A current confinement element that can be used in constructing light-emitting devices. The current confinement element includes a top layer and an aperture-defining layer. The top layer includes a top semiconducting material of a first conductivity type that is transparent to light. The aperture-defining layer includes an aperture region and a confinement region. The aperture region includes an aperture semiconducting material of the first conductivity type that is transparent to light. The confinement region surrounds the aperture region and includes a material that has been doped to provide a high resistance to the flow of current. The aperture-defining layer is constructed by implanting or diffusing elements into one or more of the mirror layers prior to depositing the remaining mirror layers on top of the aperture-defining layer.
摘要翻译：可用于构造发光器件的电流限制元件。电流限制元件包括顶层和孔限定层。顶层包括对光透明的第一导电类型的顶部半导体材料。孔径限定层包括孔区域和限制区域。开口区域包括对光透明的第一导电类型的孔径半导体材料。限制区域围绕开口区域并且包括被掺杂以提供对电流流动的高电阻的材料。在将剩余的镜面层沉积在孔限定层的顶部之前，通过将元件植入或漫射到一个或多个镜层中来构造光圈限定层。

6. 发明授权

US5843804A Method of making avalanche photodiodes with epitaxially-regrown guard rings 失效
标题翻译：用外延再生长的防护环制造雪崩光电二极管的方法
公开(公告)号：US5843804A
公开(公告)日：1998-12-01
申请号：US812465
申请日：1997-03-06
申请人： Chung-Yi Su , Ghulam Hasnain , James N. Hollenhorst
发明人： Chung-Yi Su , Ghulam Hasnain , James N. Hollenhorst
IPC分类号： H01L31/107 , H01L31/18
CPC分类号： H01L31/1075
摘要： A SAM avalanche photodiode formed with an epitaxially regrown guard ring and a planar P-N junction defined between a cap layer and a multiplication layer. The multiplication layer is part of a multi-layer semiconductor platform having a conductivity opposite to the conductivity type of the cap layer, including a light absorption layer, a substrate and an intermediate layer. A second embodiment of the present invention is disclosed including a SAM avalanche photodiode having a guard ring with a variable distribution of impurity dopant concentrations. In addition, a third embodiment of the present invention is disclosed in which a narrow band gap layer completely covers the cap layer and a non-alloy metal contact is formed to completely cover the narrow band gap layer, forming a mirror junction. In this embodiment, incident light is shined through the substrate and reflected from the mirror junction, enhancing the absorption efficiency.
摘要翻译： SAM雪崩光电二极管形成有外延重新生长的保护环和在盖层和乘法层之间限定的平面P-N结。倍增层是具有与覆盖层的导电类型相反的导电性的多层半导体平台的一部分，包括光吸收层，衬底和中间层。公开了本发明的第二实施例，其包括具有杂质掺杂剂浓度可变分布的保护环的SAM雪崩光电二极管。此外，公开了本发明的第三实施例，其中窄带隙层完全覆盖盖层，并且形成非合金金属接触以完全覆盖窄带隙层，形成镜结。在本实施例中，入射光通过衬底照射并从镜结点反射，提高了吸收效率。

7. 发明授权

US5136603A Self-monitoring semiconductor laser device 失效
标题翻译：自我监测半导体激光器件
公开(公告)号：US5136603A
公开(公告)日：1992-08-04
申请号：US692746
申请日：1991-04-29
申请人： Ghulam Hasnain , Kuochou Tai
发明人： Ghulam Hasnain , Kuochou Tai
IPC分类号： H01L27/15 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/183 , H01S5/187 , H01S5/50
CPC分类号： H01S5/0264 , H01S5/183 , H01S5/0427 , H01S5/18302
摘要： The present invention is a semiconductor laser having an integral photodiode and/or modulator. The integrated structure comprises a quantum well active region sandwiched between a pair of distributed Bragg reflector stacks for emitting laser light transverse to the planes of growth. An intrinsic layer and a doped semiconductor layer are disposed on one of the reflector stacks for forming, in combination with the outer layer of the stack, a photodiode in the path of emitted light. The diode can be used either to monitor the laser power or to modulate the laser output. The device is particularly suited for fabrication and testing in large arrays and, in addition, has the advantages of a circular, low divergence optical output, inherently single mode operation, and a high two-dimensional packing density.
摘要翻译：本发明是具有整体光电二极管和/或调制器的半导体激光器。集成结构包括夹在一对分布布拉格反射器叠层之间的量子阱有源区域，用于发射横切于生长平面的激光。本征层和掺杂半导体层设置在一个反射器叠层上，用于与发射光的路径中的叠层的外层结合形成光电二极管。二极管可用于监视激光功率或调制激光输出。该器件特别适用于大阵列的制造和测试，另外具有圆形，低发散光输出，固有单模操作和高二维封装密度的优点。

8. 发明授权

US08455332B2 Method and apparatus for manufacturing LED devices using laser scribing 有权
标题翻译：使用激光划线制造LED器件的方法和装置
公开(公告)号：US08455332B2
公开(公告)日：2013-06-04
申请号：US12434208
申请日：2009-05-01
申请人： Norihito Hamaguchi , Ghulam Hasnain
发明人： Norihito Hamaguchi , Ghulam Hasnain
IPC分类号： H01L21/00
CPC分类号： H01L33/0095 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： A method of manufacturing a light-emitting device using laser scribing to improve overall light output is disclosed. Upon placing a semiconductor wafer having light emitting diode (“LED”) devices separated by streets on a wafer chuck, the process arranges a first surface of semiconductor wafer containing front sides of the LED devices facing up and a second surface of semiconductor wafer containing back sides of the LED devices facing toward the wafer chuck. After aligning a laser device over the first surface of the semiconductor wafer above a street, the process is configured to focus a high intensity portion of a laser beam generated by the laser device at a location in a substrate closer to the back sides of the LED devices.
摘要翻译：公开了一种使用激光划线制造发光装置以提高整体光输出的方法。在将具有由街道分隔开的发光二极管（“LED”）器件的半导体晶片放置在晶片卡盘上时，该工艺将包含LED器件的前侧的半导体晶片的第一表面朝上并且包含背面的半导体晶片的第二表面 LED器件的侧面朝向晶片卡盘。在将激光装置对准在街道上方的半导体晶片的第一表面上之后，该处理被配置为将由激光装置产生的激光束的高强度部分聚焦在更靠近LED背面的基板中的位置设备。

9. 发明授权

US08436549B2 Drive circuit for a color temperature tunable LED light source 有权
标题翻译：驱动电路，用于色温可调LED光源
公开(公告)号：US08436549B2
公开(公告)日：2013-05-07
申请号：US12856009
申请日：2010-08-13
申请人： Ghulam Hasnain
发明人： Ghulam Hasnain
IPC分类号： H05B37/02
CPC分类号： H05B33/086 , H05B33/0869 , H05B33/0872
摘要： A drive circuit for a color temperature tunable LED light source. An apparatus includes a current driver configured to output a first drive current to drive a first group of LED chips of the light source to emit first color temperature light and to output a second drive current to drive a second group of LED chips of the light source to emit second color temperature light. The apparatus also includes a controller coupled to the current driver and configured to control the first and second drive currents so that the first color temperature light and the second color temperature light combine to produce a resulting light having a selected color temperature and a selected intensity value.
摘要翻译：用于色温可调LED光源的驱动电路。一种装置包括电流驱动器，其被配置为输出第一驱动电流以驱动光源的第一组LED芯片以发射第一色温光并输出第二驱动电流以驱动光源的第二组LED芯片发出第二色温光。该装置还包括耦合到电流驱动器并被配置为控制第一和第二驱动电流的控制器，使得第一色温光和第二色温光结合以产生具有选定的色温和选定的亮度值的结果光。

10. 发明授权

US08324636B2 Method and apparatus for manufacturing LED devices using laser scribing 有权
标题翻译：使用激光划线制造LED器件的方法和装置
公开(公告)号：US08324636B2
公开(公告)日：2012-12-04
申请号：US12906349
申请日：2010-10-18
申请人： Norihito Hamaguchi , Ghulam Hasnain
发明人： Norihito Hamaguchi , Ghulam Hasnain
IPC分类号： H01L33/00
CPC分类号： H01L33/0095 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： A method of manufacturing a light-emitting device using laser scribing to improve overall light output is disclosed. Upon placing a semiconductor wafer having light emitting diode (“LED”) devices separated by streets on a wafer chuck, the process arranges a first surface of semiconductor wafer containing front sides of the LED devices facing up and a second surface of semiconductor wafer containing back sides of the LED devices facing toward the wafer chuck. After aligning a laser device over the first surface of the semiconductor wafer above a street, the process is configured to focus a high intensity portion of a laser beam generated by the laser device at a location in a substrate closer to the back sides of the LED devices.
摘要翻译：公开了一种使用激光划线制造发光装置以提高整体光输出的方法。在将具有由街道分隔开的发光二极管（LED）器件的半导体晶片放置在晶片卡盘上时，该处理将包含LED器件的前侧面向上的半导体晶片的第一表面和包含背面的半导体晶片的第二表面 LED器件面向晶片卡盘。在将激光装置对准在街道上方的半导体晶片的第一表面上之后，该处理被配置为将由激光装置产生的激光束的高强度部分聚焦在更靠近LED背面的基板中的位置设备。

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