专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10211365B2 Method for producing optoelectronic devices comprising light-emitting diodes 有权
公开(公告)号：US10211365B2
公开(公告)日：2019-02-19
申请号：US14916985
申请日：2014-09-30
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives , Aledia
发明人： Christophe Bouvier , Emilie Pougeoise , Xavier Hugon , Carlo Cagli , Tiphaine Dupont , Philippe Gibert , Nacer Aitmani
IPC分类号： H01L33/00 , H01L33/18 , H01L33/62 , H01L33/50 , H01L33/54 , H01L33/08 , H01L33/38 , H01L25/075
摘要： A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.

2. 发明申请

US20190326270A1 OPTO-ELECTRONIC DEVICE WITH LIGHT-EMITTING DIODES 审中-公开
公开(公告)号：US20190326270A1
公开(公告)日：2019-10-24
申请号：US16502443
申请日：2019-07-03
申请人： Aledia
发明人： Christophe Bouvier , Erwan Dornel , Xavier Hugon , Carlo Cagli
IPC分类号： H01L25/16 , H01L33/32 , H01L33/42 , H01L27/15 , H01L33/24 , H01L33/06 , H01L33/14 , H01L33/08
摘要： An optoelectronic device including a semiconductor substrate that is optionally doped with a first type of conductivity; a first semiconductor region that is electrically connected to the substrate, doped with the first type of conductivity or a second opposite type of conductivity and more strongly doped than the substrate; a first set of first light-emitting diodes resting on the first semiconductor region, the first light-emitting diodes comprising wire-like, conical or frustoconical semiconductor elements; and a conductive portion in contact with the first semiconductor region.

3. 发明授权

US09299882B2 Optimised method for producing electroluminescent nanowires 有权
标题翻译：用于制备电致发光纳米线的优化方法
公开(公告)号：US09299882B2
公开(公告)日：2016-03-29
申请号：US14653241
申请日：2013-10-10
申请人： ALEDIA
发明人： Carlo Cagli
IPC分类号： H01L21/00 , H01L33/00 , H01L33/06 , H01L33/08 , H01L33/18 , H01L29/06 , H01L21/02 , H01L33/24
CPC分类号： H01L33/0075 , H01L21/02603 , H01L29/0669 , H01L33/0095 , H01L33/06 , H01L33/08 , H01L33/18 , H01L33/24 , H01L2933/0016
摘要： A process for fabricating an array of nanowires on the surface of a substrate, the nanowires comprising a portion capable of emitting radiation under action of an electrical or optical control and at least partially connected to one another electrically via a conductive upper layer, comprises steps allowing a subset of defective nanowires to be identified among active nanowires, the steps comprising: producing a layer of negative photoresist sensitive to the emission wavelength, covering the array of the nanowires; activating the array of the nanowires under electrical control or optical control so the active nanowires emit the radiation, the radiation decreasing the solubility of the negative resist; developing the resist level with the defective nanowires, leaving zones made less soluble and encircling the active nanowires; and removing the conductive layer above the defective nanowires. A process for fabricating one or more light-emitting diodes using the process is provided.
摘要翻译：一种用于在衬底表面上制造纳米线阵列的方法，所述纳米线包括能够在电或光控制的作用下发射辐射并且至少部分地通过导电上层电连接的部分的纳米线，包括允许在活性纳米线中识别缺陷纳米线的子集，所述步骤包括：产生对发射波长敏感的负光致抗蚀剂层，覆盖纳米线的阵列; 在电气控制或光学控制下激活纳米线的阵列，使得活性纳米线发射辐射，辐射降低了负性抗蚀剂的溶解度; 用有缺陷的纳米线开发抗蚀剂水平，使得区域变得较少可溶并环绕活性纳米线; 并且去除导电层上方的有缺陷的纳米线。提供了使用该方法制造一个或多个发光二极管的工艺。

4. 发明授权

US10937777B2 Opto-electronic device with light-emitting diodes 有权
公开(公告)号：US10937777B2
公开(公告)日：2021-03-02
申请号：US16502443
申请日：2019-07-03
申请人： Aledia
发明人： Christophe Bouvier , Erwan Dornel , Xavier Hugon , Carlo Cagli
IPC分类号： H01L29/06 , H01L25/16 , H01L33/08 , H01L33/14 , H01L33/24 , H01L27/15 , H01L33/06 , H01L33/32 , H01L33/42 , H01L33/18 , H05B45/50
摘要： An optoelectronic device including a semiconductor substrate that is optionally doped with a first type of conductivity; a first semiconductor region that is electrically connected to the substrate, doped with the first type of conductivity or a second opposite type of conductivity and more strongly doped than the substrate; a first set of first light-emitting diodes resting on the first semiconductor region, the first light-emitting diodes comprising wire-like, conical or frustoconical semiconductor elements; and a conductive portion in contact with the first semiconductor region.

5. 发明授权

US09847446B2 Electroluminescent device with integrated sensor and method for controlling the emission of the device 有权
公开(公告)号：US09847446B2
公开(公告)日：2017-12-19
申请号：US14778017
申请日：2014-03-25
申请人： ALEDIA
发明人： Carlo Cagli , Giorgio Anania
IPC分类号： H01L33/00 , H01L33/06 , H01L27/15 , H01L33/08 , H01L33/16 , H01L33/24 , H01L31/153 , H01L33/32 , H05B33/08
CPC分类号： H01L33/06 , H01L27/15 , H01L27/156 , H01L31/153 , H01L33/08 , H01L33/16 , H01L33/24 , H01L33/32 , H05B33/0854 , H05B33/0872
摘要： An electroluminescent device comprises a structure comprising a set of nanowires on the surface of a substrate, comprising: a first series of primary so-called emission nanowires (NTie) comprising nanowires connected to first electrical contacts and capable of emitting light under the action of a forward first voltage from a forward voltage or current source; a second series of secondary detection nanowires (NTid) adjacent to the primary nanowires, connected to second electrical contacts and capable of generating a photocurrent under the action of an ambient light and/or of a portion of the light emitted by some of the primary nanowires, under the control of a second reverse voltage, from a voltage or current source; means for controlling the forward voltage as a function of the photocurrent. A method for controlling the luminance of an electroluminescent device is provided.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式