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    • 3. 发明申请
    • METHOD FOR FORMING A MICROSTRUCTURE
    • 形成微结构的方法
    • US20120114903A1
    • 2012-05-10
    • US13231863
    • 2011-09-13
    • Da-Ren ChiouWei-Che HungShoh-Yue LinChiu-Fang ChenTzu-Ying Chen
    • Da-Ren ChiouWei-Che HungShoh-Yue LinChiu-Fang ChenTzu-Ying Chen
    • B32B3/00G03F7/20
    • G03F7/027G03F7/203G03F7/26
    • A method for forming a microstructure includes: (a) forming a photocurable layer on a substrate, the photocurable layer including at least one photocurable compound that has a photocurable functional group equivalent weight ranging from 70 to 700 g/mol; (b) covering partially the photocurable layer using a patterned mask; (c) exposing the photocurable layer through the patterned mask using a first light source so that the photocurable layer is cured at first regions which are exposed; (d) removing the patterned mask; and (e) illuminating the photocurable layer using a second light source to cure second regions of the photocurable layer which have not been cured. The first and second regions have different surface heights and provide a surface roughness for the microstructure.
    • 形成微结构的方法包括:(a)在基材上形成光固化层,所述光固化层包含至少一种光固化性的化合物,其光固化官能团当量为70-700g / mol; (b)使用图案化的掩模部分地覆盖光固化层; (c)使用第一光源使可光固化层通过图案化掩模曝光,使得可光固化层在暴露的第一区域固化; (d)去除图案化掩模; 和(e)使用第二光源照射光固化层以固化未固化的光固化层的第二区域。 第一和第二区域具有不同的表面高度并为微观结构提供表面粗糙度。
    • 5. 发明授权
    • Method for forming a microstructure
    • 微结构形成方法
    • US08703409B2
    • 2014-04-22
    • US13231863
    • 2011-09-13
    • Da-Ren ChiouWei-Che HungShoh-Yue LinChiu-Fang ChenTzu-Ying Chen
    • Da-Ren ChiouWei-Che HungShoh-Yue LinChiu-Fang ChenTzu-Ying Chen
    • G03F7/26
    • G03F7/027G03F7/203G03F7/26
    • A method for forming a microstructure includes: (a) forming a photocurable layer on a substrate, the photocurable layer including at least one photocurable compound that has a photocurable functional group equivalent weight ranging from 70 to 700 g/mol; (b) covering partially the photocurable layer using a patterned mask; (c) exposing the photocurable layer through the patterned mask using a first light source so that the photocurable layer is cured at first regions which are exposed; (d) removing the patterned mask; and (e) illuminating the photocurable layer using a second light source to cure second regions of the photocurable layer which have not been cured. The first and second regions have different surface heights and provide a surface roughness for the microstructure.
    • 形成微结构的方法包括:(a)在基材上形成光固化层,所述光固化层包含至少一种光固化性的化合物,其光固化官能团当量为70-700g / mol; (b)使用图案化掩模部分地覆盖光固化层; (c)使用第一光源使可光固化层通过图案化掩模曝光,使得可光固化层在暴露的第一区域固化; (d)去除图案化掩模; 和(e)使用第二光源照射光固化层以固化未固化的光固化层的第二区域。 第一和第二区域具有不同的表面高度并为微观结构提供表面粗糙度。