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1. 发明授权

US06959228B2 Method of protecting data stored in a memory of welding controller 失效
标题翻译：保护存储在焊接控制器存储器中的数据的方法
公开(公告)号：US06959228B2
公开(公告)日：2005-10-25
申请号：US10134267
申请日：2002-04-29
申请人： Daisuke Higuchi , Yasuhiro Obara , Akihiro Kaburagi
发明人： Daisuke Higuchi , Yasuhiro Obara , Akihiro Kaburagi
IPC分类号： B23K11/24 , B23K9/095 , G06F12/14 , G06F12/16 , G06F21/24 , G06F19/00
CPC分类号： G06F12/1433 , B23K9/0953
摘要： A method of protecting data stored in a memory of a welding controller provided with an EEPROM as a storage element capable of storing welding control data in a welding controller, thereby enhancing reliable protection of data stored in the EEPROM. The method of protecting data stored in a memory of a welding controller comprises the steps of providing the EEPROM having write validity control function means in the controller, using the EEPROM as a storage element for storing welding control data therein, writing the welding control data into the EEPROM and storing the same in the EEPROM, reading the welding control data from the EEPROM when the welding controller is used, and rendering the EEPROM transitive from a write disable state to a write enable state by the write validity control function when the welding control data is changed.
摘要翻译：保存存储在具有EEPROM的焊接控制器的存储器中的数据的方法作为能够将焊接控制数据存储在焊接控制器中的存储元件，从而增强对存储在EEPROM中的数据的可靠保护。保护存储在焊接控制器的存储器中的数据的方法包括以下步骤：在控制器中提供具有写入有效性控制功能装置的EEPROM，使用EEPROM作为其中存储焊接控制数据的存储元件，将焊接控制数据写入 EEPROM并将其存储在EEPROM中，当使用焊接控制器时从EEPROM读取焊接控制数据，并且当焊接控制时通过写入有效性控制功能使EEPROM传递从写入禁止状态到写入使能状态数据更改。

2. 发明授权

US06813538B2 Welding system 失效
标题翻译：焊接系统
公开(公告)号：US06813538B2
公开(公告)日：2004-11-02
申请号：US10128124
申请日：2002-04-23
申请人： Daisuke Higuchi , Yasuhiro Obara , Yoshihiro Sato
发明人： Daisuke Higuchi , Yasuhiro Obara , Yoshihiro Sato
IPC分类号： G06F1900
CPC分类号： B23K11/241 , B23K9/0953 , B23K9/0956 , B23K9/1056 , B23K11/252
摘要： A welding system is capable of shortening length of connection lines and of effectively utilizing devices as a whole. The system includes a welding controller provided with an I/O interface, a controller unit provided with a programmable logic controller and connected to the I/O interface of the welding controller through a field bus interface serving as a communication link, a welding machine and general-purpose peripheral equipment. The welding controller controls the welding machine and the general-purpose peripheral equipment upon receipt of instructions from the programmable logic controller through the field bus interface.
摘要翻译：一种焊接系统能够缩短连接线的长度并有效地利用整体装置。该系统包括具有I / O接口的焊接控制器，具有可编程逻辑控制器的控制器单元，并通过用作通信链路的现场总线接口连接到焊接控制器的I / O接口，焊接机和通用外围设备。焊接控制器通过现场总线接口接收到来自可编程逻辑控制器的指令时，控制焊机和通用外围设备。

3. 发明申请

US20050048708A1 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20050048708A1
公开(公告)日：2005-03-03
申请号：US10923045
申请日：2004-08-23
申请人： Kentaro Yamada , Masato Takahashi , Tatsuyuki Konagaya , Takeshi Katoh , Masaki Sakashita , Koichiro Takei , Yasuhiro Obara , Yoshio Fukayama
发明人： Kentaro Yamada , Masato Takahashi , Tatsuyuki Konagaya , Takeshi Katoh , Masaki Sakashita , Koichiro Takei , Yasuhiro Obara , Yoshio Fukayama
IPC分类号： H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L21/8234 , H01L21/8238 , H01L21/8242 , H01L21/8247 , H01L27/088 , H01L27/092 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/788 , H01L29/792 , H01L21/311
CPC分类号： H01L27/11526 , H01L21/28035 , H01L21/28525 , H01L21/32053 , H01L21/76886 , H01L21/82345 , H01L21/823462 , H01L21/823842 , H01L21/823857 , H01L27/105 , H01L27/115 , H01L27/11546 , H01L29/4916 , H01L29/6659 , H01L29/7833
摘要： For improving the reliability of a semiconductor device having a stacked structure of a polycrystalline silicon film and a tungsten silicide film, the device is manufactured by forming a polycrystalline silicon film, a tungsten silicide film and an insulating film successively over a gate insulating film disposed over the main surface of a semiconductor substrate, and patterning them to form a gate electrode having a stacked structure consisting of the polycrystalline silicon film and tungsten silicide film. The polycrystalline silicon film has two regions, one region formed by an impurity-doped polycrystalline silicon and the other one formed by non-doped polycrystalline silicon. The tungsten silicide film is deposited so that the resistivity of it upon film formation would exceed 1000 μΩcm.
摘要翻译：为了提高具有多晶硅膜和硅化钨膜的堆叠结构的半导体器件的可靠性，通过在布置在其上的栅极绝缘膜上依次形成多晶硅膜，硅化钨膜和绝缘膜来制造器件半导体衬底的主表面，并将其图形化以形成具有由多晶硅膜和硅化钨膜组成的堆叠结构的栅电极。多晶硅膜具有两个区域，一个区域由杂质掺杂多晶硅形成，另一个区域由非掺杂多晶硅形成。沉积硅化钨膜使其在成膜时的电阻率将超过1000微克。

4. 发明授权

US07601635B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07601635B2
公开(公告)日：2009-10-13
申请号：US11822191
申请日：2007-07-03
申请人： Kentaro Yamada , Masato Takahashi , Tatsuyuki Konagaya , Takeshi Katoh , Masaki Sakashita , Koichiro Takei , Yasuhiro Obara , Yoshio Fukayama
发明人： Kentaro Yamada , Masato Takahashi , Tatsuyuki Konagaya , Takeshi Katoh , Masaki Sakashita , Koichiro Takei , Yasuhiro Obara , Yoshio Fukayama
IPC分类号： H01L21/4763 , H01L21/336
CPC分类号： H01L27/11526 , H01L21/28035 , H01L21/28525 , H01L21/32053 , H01L21/76886 , H01L21/82345 , H01L21/823462 , H01L21/823842 , H01L21/823857 , H01L27/105 , H01L27/115 , H01L27/11546 , H01L29/4916 , H01L29/6659 , H01L29/7833
摘要： For improving the reliability of a semiconductor device having a stacked structure of a polycrystalline silicon film and a tungsten silicide film, the device is manufactured by forming a polycrystalline silicon film, a tungsten silicide film and an insulating film successively over a gate insulating film disposed over the main surface of a semiconductor substrate, and patterning them to form a gate electrode having a stacked structure consisting of the polycrystalline silicon film and tungsten silicide film. The polycrystalline silicon film has two regions, one region formed by an impurity-doped polycrystalline silicon and the other one formed by non-doped polycrystalline silicon. The tungsten silicide film is deposited so that the resistivity of it upon film formation would exceed 1000 μΩcm.
摘要翻译：为了提高具有多晶硅膜和硅化钨膜的堆叠结构的半导体器件的可靠性，通过在布置在其上的栅极绝缘膜上依次形成多晶硅膜，硅化钨膜和绝缘膜来制造器件半导体衬底的主表面，并将其图形化以形成具有由多晶硅膜和硅化钨膜组成的堆叠结构的栅电极。多晶硅膜具有两个区域，一个区域由杂质掺杂多晶硅形成，另一个区域由非掺杂多晶硅形成。沉积硅化钨膜使其在成膜时的电阻率将超过1000微克。

5. 发明申请

US20070259512A1 Method of manufacturing a semiconductor device 有权
公开(公告)号：US20070259512A1
公开(公告)日：2007-11-08
申请号：US11822191
申请日：2007-07-03
申请人： Kentaro Yamada , Masato Takahashi , Tatsuyuki Konagaya , Takeshi Katoh , Masaki Sakashita , Koichiro Takei , Yasuhiro Obara , Yoshio Fukayama
发明人： Kentaro Yamada , Masato Takahashi , Tatsuyuki Konagaya , Takeshi Katoh , Masaki Sakashita , Koichiro Takei , Yasuhiro Obara , Yoshio Fukayama
IPC分类号： H01L21/3205
CPC分类号： H01L27/11526 , H01L21/28035 , H01L21/28525 , H01L21/32053 , H01L21/76886 , H01L21/82345 , H01L21/823462 , H01L21/823842 , H01L21/823857 , H01L27/105 , H01L27/115 , H01L27/11546 , H01L29/4916 , H01L29/6659 , H01L29/7833
摘要： For improving the reliability of a semiconductor device having a stacked structure of a polycrystalline silicon film and a tungsten silicide film, the device is manufactured by forming a polycrystalline silicon film, a tungsten silicide film and an insulating film successively over a gate insulating film disposed over the main surface of a semiconductor substrate, and patterning them to form a gate electrode having a stacked structure consisting of the polycrystalline silicon film and tungsten silicide film. The polycrystalline silicon film has two regions, one region formed by an impurity-doped polycrystalline silicon and the other one formed by non-doped polycrystalline silicon. The tungsten silicide film is deposited so that the resistivity of it upon film formation would exceed 1000 μΩcm.

6. 发明授权

US07256125B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07256125B2
公开(公告)日：2007-08-14
申请号：US10923045
申请日：2004-08-23
申请人： Kentaro Yamada , Masato Takahashi , Tatsuyuki Konagaya , Takeshi Katoh , Masaki Sakashita , Koichiro Takei , Yasuhiro Obara , Yoshio Fukayama
发明人： Kentaro Yamada , Masato Takahashi , Tatsuyuki Konagaya , Takeshi Katoh , Masaki Sakashita , Koichiro Takei , Yasuhiro Obara , Yoshio Fukayama
IPC分类号： H01L21/44 , H01L21/4763 , H01L21/336
CPC分类号： H01L27/11526 , H01L21/28035 , H01L21/28525 , H01L21/32053 , H01L21/76886 , H01L21/82345 , H01L21/823462 , H01L21/823842 , H01L21/823857 , H01L27/105 , H01L27/115 , H01L27/11546 , H01L29/4916 , H01L29/6659 , H01L29/7833
摘要： For improving the reliability of a semiconductor device having a stacked structure of a polycrystalline silicon film and a tungsten silicide film, the device is manufactured by forming a polycrystalline silicon film, a tungsten silicide film and an insulating film successively over a gate insulating film disposed over the main surface of a semiconductor substrate, and patterning them to form a gate electrode having a stacked structure consisting of the polycrystalline silicon film and tungsten silicide film. The polycrystalline silicon film has two regions, one region formed by an impurity-doped polycrystalline silicon and the other one formed by non-doped polycrystalline silicon. The tungsten silicide film is deposited so that the resistivity of it upon film formation would exceed 1000 μΩcm.
摘要翻译：为了提高具有多晶硅膜和硅化钨膜的堆叠结构的半导体器件的可靠性，通过在布置在其上的栅极绝缘膜上依次形成多晶硅膜，硅化钨膜和绝缘膜来制造器件半导体衬底的主表面，并将其图形化以形成具有由多晶硅膜和硅化钨膜组成的堆叠结构的栅电极。多晶硅膜具有两个区域，一个区域由杂质掺杂多晶硅形成，另一个区域由非掺杂多晶硅形成。沉积硅化钨膜使其在成膜时的电阻率将超过1000微克。

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