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1. 发明申请

US20130040245A1 Methods Of Processing Substrates 有权
标题翻译：基板加工方法
公开(公告)号：US20130040245A1
公开(公告)日：2013-02-14
申请号：US13205004
申请日：2011-08-08
申请人： Scott L. Light , Kaveri Jain , Zishu Zhang , Anton J. de Villiers , Dan Millward , Jianming Zhou , Michael D. Hyatt
发明人： Scott L. Light , Kaveri Jain , Zishu Zhang , Anton J. de Villiers , Dan Millward , Jianming Zhou , Michael D. Hyatt
IPC分类号： G03F7/20
CPC分类号： G03F7/0035
摘要： A method of processing a substrate includes forming first photoresist on a substrate. A portion of the first photoresist is selectively exposed to actinic energy and then the first photoresist is negative tone developed to remove an unexposed portion of the first photoresist. Second photoresist is formed on the substrate over the developed first photoresist. A portion of the second photoresist is selectively exposed to actinic energy and then the second photoresist is negative tone developed to remove an unexposed portion of the second photoresist and form a pattern on the substrate which comprises the developed first photoresist and the developed second photoresist. Other implementations are disclosed.
摘要翻译：一种处理衬底的方法包括在衬底上形成第一光致抗蚀剂。第一光致抗蚀剂的一部分选择性地暴露于光化能，然后第一光致抗蚀剂显影为负色调以除去第一光致抗蚀剂的未曝光部分。在显影的第一光致抗蚀剂上的基底上形成第二光致抗蚀剂。第二光致抗蚀剂的一部分选择性地暴露于光化能，然后第二光致抗蚀剂显色以除去第二光致抗蚀剂的未曝光部分，并在包含显影的第一光致抗蚀剂和显影的第二光致抗蚀剂的基板上形成图案。公开了其他实现。

2. 发明申请

US20090075488A1 BETA-DIKETIMINATE LIGAND SOURCES AND METAL-CONTAINING COMPOUNDS THEREOF, AND SYSTEMS AND METHODS INCLUDING SAME 有权
标题翻译： BETA-DIKETIMINATE配体源及其含金属化合物，以及包括其的系统和方法
公开(公告)号：US20090075488A1
公开(公告)日：2009-03-19
申请号：US12246772
申请日：2008-10-07
申请人： Dan Millward , Timothy A. Quick
发明人： Dan Millward , Timothy A. Quick
IPC分类号： H01L21/312 , C07F5/00 , C07F3/00 , C07C211/65 , C07C211/09 , B05D5/12 , C23C16/54
CPC分类号： C23C16/40 , C07C251/12 , C23C16/18 , H01L21/28556
摘要： The present invention provides metal-containing compounds that include at least one β-diketiminate ligand, and methods of making and using the same. In certain embodiments, the metal-containing compounds include at least one β-diketiminate ligand with at least one fluorine-containing organic group as substituent. In other certain embodiments, the metal-containing compounds include at least one β-diketiminate ligand with at least one aliphatic group as a substituent selected to have greater degrees of freedom than the corresponding substituent in the β-diketiminate ligands of certain metal-containing compounds known in the art. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for β-diketiminate ligands are also provided.
摘要翻译：本发明提供含有至少一种β-二酮亚胺配体的含金属化合物及其制备和使用方法。在某些实施方案中，含金属化合物包括至少一种具有至少一个含氟有机基团作为取代基的β-二酮亚胺配体。在其它某些实施方案中，含金属化合物包括至少一种具有至少一个脂族基团作为取代基的β-二酮酸酯配体，其被选择为具有比某些含金属化合物的β-二酮酸配体中的相应取代基更大的自由度本领域已知该化合物可用于使用气相沉积方法沉积含金属层。还提供了包括这些化合物的蒸镀系统。还提供了β-二酮酸配体的来源。

3. 发明申请

US20080214001A9 Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same 有权
标题翻译：不对称配体源，对称含金属化合物，以及包括其的体系和方法
公开(公告)号：US20080214001A9
公开(公告)日：2008-09-04
申请号：US11169082
申请日：2005-06-28
申请人： Dan Millward , Stefan Uhlenbrock , Timothy Quick
发明人： Dan Millward , Stefan Uhlenbrock , Timothy Quick
IPC分类号： H01L21/44 , H01L21/31
CPC分类号： H01L21/0228 , C07C251/12 , C07F5/003 , C23C16/18 , C23C16/40 , H01L21/02175 , H01L21/02197 , H01L21/28556 , H01L21/3141 , H01L21/316
摘要： The present invention provides metal-containing compounds that include at least one β-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical β-diketiminate ligands. In other embodiments, the metal-containing compounds are heteroleptic complexes including at least one β-diketiminate ligand. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for β-diketiminate ligands are also provided.
摘要翻译：本发明提供含有至少一种β-二酮亚胺配体的含金属化合物及其制备和使用方法。在一些实施方案中，含金属的化合物是包含不对称的β-二酮亚胺配体的均聚配合物。在其它实施方案中，含金属化合物是包含至少一个β-二酮酸配体的杂光复合物。该化合物可用于使用气相沉积方法沉积含金属层。还提供了包括这些化合物的蒸镀系统。还提供了β-二酮酸配体的来源。

4. 发明申请

US20080064209A1 SYSTEMS AND METHODS FOR FORMING METAL-CONTAINING LAYERS USING VAPOR DEPOSITION PROCESSES 失效
标题翻译：使用蒸气沉积工艺形成含金属层的系统和方法
公开(公告)号：US20080064209A1
公开(公告)日：2008-03-13
申请号：US11943664
申请日：2007-11-21
申请人： Dan Millward
发明人： Dan Millward
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/308 , C23C16/34 , C23C16/40
摘要： A method of forming (and an apparatus for forming) a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or memory device structure, using one or more homoleptic and/or heteroleptic precursor compounds that include, for example, guanidinate, phosphoguanidinate, isoureate, thioisoureate, and/or selenoisoureate ligands using a vapor deposition process is provided.
摘要翻译：一种使用一种或多种排斥和/或杂散前体化合物在基底上，特别是用于制造半导体或存储器件结构的半导体衬底或衬底组件中形成（以及用于形成）含金属层的方法，其包括提供了使用蒸气沉积方法的胍，磷酸胍，异硫脲酸酯，硫代异构体和/或硒取代酯配体。

5. 发明申请

US20060292303A1 Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same 有权
标题翻译： β-二酮酸配体源及其含金属化合物，以及包括其的体系和方法
公开(公告)号：US20060292303A1
公开(公告)日：2006-12-28
申请号：US11169065
申请日：2005-06-28
申请人： Dan Millward , Timothy Quick
发明人： Dan Millward , Timothy Quick
IPC分类号： H01L21/00 , C07F5/00 , C23C16/00
CPC分类号： C23C16/40 , C07C251/12 , C23C16/18 , H01L21/28556
摘要： The present invention provides metal-containing compounds that include at least one β-diketiminate ligand, and methods of making and using the same. In certain embodiments, the metal-containing compounds include at least one β-diketiminate ligand with at least one fluorine-containing organic group as a substituent. In other certain embodiments, the metal-containing compounds include at least one β-diketiminate ligand with at least one aliphatic group as a substituent selected to have greater degrees of freedom than the corresponding substituent in the β-diketiminate ligands of certain metal-containing compounds known in the art. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for β-diketiminate ligands are also provided.
摘要翻译：本发明提供含有至少一种β-二酮亚胺配体的含金属化合物及其制备和使用方法。在某些实施方案中，含金属化合物包括至少一种具有至少一个含氟有机基团作为取代基的β-二酮亚胺配体。在其它某些实施方案中，含金属化合物包括至少一种具有至少一个脂族基团作为取代基的β-二酮酸酯配体，其被选择为具有比某些含金属化合物的β-二酮酸配体中的相应取代基更大的自由度本领域已知该化合物可用于使用气相沉积方法沉积含金属层。还提供了包括这些化合物的蒸镀系统。还提供了β-二酮酸配体的来源。

6. 发明申请

US20060035462A1 Systems and methods for forming metal-containing layers using vapor deposition processes 有权
标题翻译：使用气相沉积工艺形成含金属层的系统和方法
公开(公告)号：US20060035462A1
公开(公告)日：2006-02-16
申请号：US10918308
申请日：2004-08-13
申请人： Dan Millward
发明人： Dan Millward
IPC分类号： H01L21/20
CPC分类号： H01L21/28562 , C23C16/308 , C23C16/34 , C23C16/40
摘要： A method of forming (and an apparatus for forming) a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or memory device structure, using one or more homoleptic and/or heteroleptic precursor compounds that include, for example, guanidinate, phosphoguanidinate, isoureate, thioisoureate, and/or selenoisoureate ligands using a vapor deposition process is provided.
摘要翻译：一种使用一种或多种排斥和/或杂散前体化合物在基底上，特别是用于制造半导体或存储器件结构的半导体衬底或衬底组件中形成（以及用于形成）含金属层的方法，其包括提供了使用蒸气沉积方法的胍，磷酸胍，异硫脲酸酯，硫代异构体和/或硒取代酯配体。

7. 发明授权

US09235134B2 Lens heating compensation in photolithography 有权
标题翻译：光刻镜头加热补偿
公开(公告)号：US09235134B2
公开(公告)日：2016-01-12
申请号：US12857316
申请日：2010-08-16
申请人： Yuan He , Kaveri Jain , Lijing Gou , Zishu Zhang , Anton deVilliers , Michael Hyatt , Jianming Zhou , Scott Light , Dan Millward
发明人： Yuan He , Kaveri Jain , Lijing Gou , Zishu Zhang , Anton deVilliers , Michael Hyatt , Jianming Zhou , Scott Light , Dan Millward
IPC分类号： G03B27/42 , G03F7/20
CPC分类号： G03F7/70116 , G03F7/70891
摘要： Photolithographic apparatus and methods are disclosed. One such apparatus includes an optical path configured to provide a first diffraction pattern in a portion of an optical system and to provide a second diffraction pattern to the portion of the optical system after providing the first diffraction pattern. Meanwhile, one such method includes providing a first diffraction pattern onto a portion of an optical system, wherein a semiconductor article is imaged using the first diffraction pattern. A second diffraction pattern is also provided onto the portion of the optical system, but the second diffraction pattern is not used to image the semiconductor article.
摘要翻译：公开了光刻设备和方法。一种这样的设备包括光路，其被配置为在光学系统的一部分中提供第一衍射图案，并且在提供第一衍射图案之后，向光学系统的部分提供第二衍射图案。同时，一种这样的方法包括在光学系统的一部分上提供第一衍射图案，其中半导体制品使用第一衍射图案成像。第二衍射图案也提供到光学系统的部分上，但是第二衍射图案不用于对半导体制品进行成像。

8. 发明授权

US09234273B2 Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same 有权
标题翻译：不对称配体源，对称含金属化合物，以及包括其的体系和方法
公开(公告)号：US09234273B2
公开(公告)日：2016-01-12
申请号：US12954344
申请日：2010-11-24
申请人： Dan Millward , Stefan Uhlenbrock , Timothy A. Quick
发明人： Dan Millward , Stefan Uhlenbrock , Timothy A. Quick
IPC分类号： C07C251/08 , C23C16/18 , C07C251/12 , C07F5/00 , C23C16/40 , H01L21/314 , H01L21/316 , H01L21/285
CPC分类号： H01L21/0228 , C07C251/12 , C07F5/003 , C23C16/18 , C23C16/40 , H01L21/02175 , H01L21/02197 , H01L21/28556 , H01L21/3141 , H01L21/316
摘要： The present invention provides metal-containing compounds that include at least one β-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical β-diketiminate ligands. In other embodiments, the metal-containing compounds are heteroleptic complexes including at least one β-diketiminate ligand. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for β-diketiminate ligands are also provided.
摘要翻译：本发明提供含有金属的化合物，其包含至少一种β-二亚胺化物配体，以及制备和使用它们的方法。在一些实施方案中，含金属的化合物是包含不对称的重氮基配合物的均质配合物。在其它实施方案中，含金属的化合物是包含至少一个重铬酸配体的杂光配合物。该化合物可用于使用气相沉积方法沉积含金属层。还提供了包括这些化合物的蒸镀系统。还提供了二联体配位体的衍生物。

9. 发明授权

US09177794B2 Methods of patterning substrates 有权
标题翻译：衬底图形化方法
公开(公告)号：US09177794B2
公开(公告)日：2015-11-03
申请号：US13350136
申请日：2012-01-13
申请人： Dan Millward
发明人： Dan Millward
IPC分类号： H01L21/311 , H01L21/027 , H01L21/312 , H01L21/033
CPC分类号： H01L21/0273 , H01L21/0337 , H01L21/31133 , H01L21/31138 , H01L21/312
摘要： A method of patterning a substrate includes forming spaced first features over a substrate. Individual of the spaced first features include sidewall portions of different composition than material that is laterally between the sidewall portions. A mixture of immiscible materials is provided between the spaced first features. At least two of the immiscible materials are laterally separated along at least one elevation between adjacent spaced first features. The laterally separating forms a laterally intermediate region including one of the immiscible materials between two laterally outer regions including another of the immiscible materials along the one elevation. The laterally outer regions are removed and material of the spaced first features is removed between the sidewall portions to form spaced second features over the substrate. Other embodiments are disclosed.
摘要翻译：图案化衬底的方法包括在衬底上形成间隔开的第一特征。间隔开的第一特征的个体包括不同于侧壁部分之间的材料的不同组成的侧壁部分。在间隔开的第一特征之间提供了不混溶材料的混合物。至少两个不混溶材料沿着相邻隔开的第一特征之间的至少一个高度侧向分开。横向分离形成横向中间区域，其包括在两个横向外部区域之间的不混溶材料之一，包括沿着一个高度的另一个不混溶材料。移除横向外部区域并且在侧壁部分之间移除间隔开的第一特征的材料，以在基底上方形成间隔开的第二特征。公开了其他实施例。

10. 发明授权

US08736814B2 Lithography wave-front control system and method 有权
标题翻译：光刻波前控制系统及方法
公开(公告)号：US08736814B2
公开(公告)日：2014-05-27
申请号：US13159245
申请日：2011-06-13
申请人： Yuan He , Jianming Zhou , Scott L. Light , Anton deVilliers , Kaveri Jain , Zishu Zhang , Dan Millward
发明人： Yuan He , Jianming Zhou , Scott L. Light , Anton deVilliers , Kaveri Jain , Zishu Zhang , Dan Millward
IPC分类号： G03B27/54 , G03B27/32 , G03F7/20
CPC分类号： G02B26/06 , G03F7/70091 , G03F7/70125 , G03F7/70258 , G03F7/70308 , G03F7/705 , G03F7/706
摘要： Some embodiments include system and methods to obtain information for adjusting variations in features formed on a substrate of a semiconductor device. Such methods can include determining a first pupil in an illumination system used to form a first feature, and determining a second pupil used to form a second feature. The methods can also include determining a pupil portion belonging to only one of the pupils, and generating a modified pupil portion from the pupil portion. Information associated with the modified pupil portion can be obtained for controlling a portion of a projection lens assembly of an illumination system. Other embodiments are described.
摘要翻译：一些实施例包括用于获得用于调整形成在半导体器件的衬底上的特征的变化的信息的系统和方法。这样的方法可以包括确定用于形成第一特征的照明系统中的第一光瞳，以及确定用于形成第二特征的第二光瞳。所述方法还可以包括确定属于仅一个瞳孔的瞳孔部分，并且从瞳孔部分产生修改的瞳孔部分。可以获得与修改的瞳孔部分相关联的信息，用于控制照明系统的投影透镜组件的一部分。描述其他实施例。

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