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1. 发明授权

US11852978B2 EUV lithography system with 3D sensing and tunning modules 有权
公开(公告)号：US11852978B2
公开(公告)日：2023-12-26
申请号：US17805695
申请日：2022-06-07
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Tai-Yu Chen , Tzu-Jung Pan , Kuan-Hung Chen , Sheng-Kang Yu , Shang-Chieh Chien , Li-Jui Chen , Heng-Hsin Liu
IPC分类号： G03F7/20 , G03F7/00
CPC分类号： G03F7/70091
摘要： The present disclosure provides a method for an extreme ultraviolet (EUV) lithography system that includes a radiation source having a laser device configured with a mechanism to generate an EUV radiation. The method includes collecting a laser beam profile of a laser beam from the laser device in a 3-dimensional (3D) mode; collecting an EUV energy distribution of the EUV radiation generated by the laser beam in the 3D mode; performing an analysis to the laser beam profile and the EUV energy distribution, resulting in an analysis data; and adjusting the radiation source according to the analysis data to enhance the EUV radiation.

2. 发明授权

US10871717B2 Optical system for a projection exposure apparatus 有权
公开(公告)号：US10871717B2
公开(公告)日：2020-12-22
申请号：US16731265
申请日：2019-12-31
申请人： Carl Zeiss SMT GmbH
发明人： Michael Patra
IPC分类号： G03F7/20 , G02B5/08 , G02B5/30 , G02B26/08
CPC分类号： G03F7/70566 , G02B5/08 , G02B5/3066 , G02B26/0816 , G03F7/702 , G03F7/70091 , G03F7/70191
摘要： An optical system for a microlithographic projection exposure apparatus for operation in the EUV includes a polarization-influencing arrangement having first and one second double reflection surface units, each having first and second reflection surfaces, in each case arranged directly adjacent at a distance d1 and at an angle of 0°±10° relative to one another. The first reflection surface of the first double reflection surface unit and the second reflection surface of the second double reflection surface unit are arranged directly adjacent at a distance d2 and at an angle of 0°±10° relative to one another, with d2>5*d1. Light incident on the first reflection surfaces forms an angle of 43°±10° with the first reflection surfaces. Light incident on the first reflection surface of the first double reflection surface unit is reflected toward the second reflection surface of the second double reflection surface unit.

3. 发明授权

US10281632B2 Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power to rotate linear polarization direction 有权
公开(公告)号：US10281632B2
公开(公告)日：2019-05-07
申请号：US13137342
申请日：2011-08-08
申请人： Mitsunori Toyoda
发明人： Mitsunori Toyoda
IPC分类号： G03F7/20 , G02B5/30 , G02B27/09 , G02B27/28 , G02B27/42
CPC分类号： G02B5/3025 , G02B27/0927 , G02B27/0944 , G02B27/28 , G02B27/4233 , G02B27/4261 , G03F7/70091 , G03F7/70108 , G03F7/70158 , G03F7/70566
摘要： An illumination optical apparatus illuminates a pattern on a mask with illumination light. The illumination optical apparatus includes an optical integrator arranged in an optical path of the illumination light, and a polarization member made of optical material with optical rotatory power, which is arranged in the optical path on an incidence side of the optical integrator, and which changes a polarization state of the illumination light. The illumination light from the polarization member is irradiated onto the pattern through a pupil plane of the illumination optical apparatus.

4. 发明申请

US20190086812A1 ILLUMINATION DEVICE 审中-公开
公开(公告)号：US20190086812A1
公开(公告)日：2019-03-21
申请号：US16192208
申请日：2018-11-15
申请人： NIKON CORPORATION
发明人： Hideki KOMATSUDA
IPC分类号： G03F7/20
CPC分类号： G03F7/70191 , G03F7/70058 , G03F7/70075 , G03F7/70091
摘要： An object is to provide an illumination apparatus that achieves illumination with a uniform illuminance distribution, while reducing a light quantity loss. An illumination apparatus for illuminating an illumination target surface has: a deflection member configured to form an illuminance distribution with a periodic pattern along a predetermined direction on a predetermined face traversing an optical path; and an optical integrator system having a plurality of wavefront division facets arrayed on the predetermined face and configured to form secondary light sources with use of a beam from the deflection member; the deflection member forms the illuminance distribution with the periodic pattern of an integer times or a unit fraction times an array period of the plurality of wavefront division facets.

5. 发明申请

US20180364586A1 METHODS AND SYSTEMS FOR PRINTING ARRAYS OF FEATURES 审中-公开
公开(公告)号：US20180364586A1
公开(公告)日：2018-12-20
申请号：US16061041
申请日：2016-12-14
申请人： FRANCIS CLUBE , HARUN SOLAK
发明人： FRANCIS CLUBE , HARUN SOLAK
IPC分类号： G03F7/20
CPC分类号： G03F7/70408 , G03F7/70091 , G03F7/7035
摘要： A method for printing a desired periodic pattern into a photosensitive layer on a substrate includes providing a mask bearing a periodic pattern whose period is a multiple of that of the desired pattern. The substrate is disposed in proximity to the mask, at least one beam is provided for illuminating the mask pattern to generate a transmitted light-field described by a Talbot distance. The layer is exposed to time-integrated intensity distributions in a number of sub-exposures by illuminating the mask pattern with the at least one beam while changing the separation between substrate and mask by at least a certain fraction of, but less than, the Talbot distance. The illumination or the substrate is configured relative to the mask for the different sub-exposures so that the layer is exposed to the same time-integrated intensity distributions that are mutually laterally offset by a certain distance and in a certain direction.

6. 发明申请

US20180164691A1 PROJECTION EXPOSURE METHODS AND SYSTEMS 审中-公开
公开(公告)号：US20180164691A1
公开(公告)日：2018-06-14
申请号：US15875752
申请日：2018-01-19
申请人： Carl Zeiss SMT GmbH
发明人： Paul Graeupner
IPC分类号： G03F7/20
CPC分类号： G03F7/70091 , G03F7/70066 , G03F7/70083 , G03F7/701 , G03F7/70108 , G03F7/70116 , G03F7/70125 , G03F7/70891
摘要： Projection exposure methods, systems, sub-systems and components are disclosed. Methods can include performing a first exposure to image a first sub-pattern of the pattern, where the first sub-pattern includes a plurality of first features extending in a first direction and spaced apart essentially periodically at a predominant periodicity length P in a second direction perpendicular to the first direction. The first exposure can be performed using a multipolar illumination mode that includes at least one substantially dipolar intensity distribution having two illumination poles positioned on a pole orientation axis substantially parallel to the second direction and spaced apart from each other.

7. 发明申请

US20180040456A1 METHOD FOR MEASURING RESOLUTION OF CHARGED PARTICLE BEAM AND CHARGED PARTICLE BEAM DRAWING APPARATUS 审中-公开
公开(公告)号：US20180040456A1
公开(公告)日：2018-02-08
申请号：US15662495
申请日：2017-07-28
申请人： NuFlare Technology, Inc.
发明人： Yukitaka SHIMIZU
IPC分类号： H01J37/305 , H01J37/04 , G01N21/95 , H01L21/027 , G01N21/21 , G01N21/956 , G03F7/20 , H01J37/22
CPC分类号： H01J37/305 , G01N21/21 , G01N21/9501 , G01N21/956 , G03F7/20 , G03F7/70091 , G03F7/70258 , H01J37/04 , H01J37/22 , H01L21/027
摘要： In one embodiment, a method for measuring a resolution of a charged particle beam includes changing a focus position of the charged particle beam in a height direction, and scanning a dot mark formed on a substrate with the charged particle beam for each focus position, detecting a reflected charged particle reflected from the dot mark for each focus position, calculating a scattered charged particle distribution from a detection result of the reflected charged particle for each height corresponding to the focus position, performing a convolution operation on an approximate expression of a beam waveform of the charged particle beam and a mark shape of the dot mark, the approximate expression including an aperture angle and a resolution of the charged particle beam as parameters, and calculating the aperture angle and the resolution by fitting the scattered charged particle distribution by height and a calculation result of the convolution operation.

8. 发明申请

US20170307982A1 IMAGING OPTICAL UNIT FOR EUV PROJECTION LITHOGRAPHY 有权
公开(公告)号：US20170307982A1
公开(公告)日：2017-10-26
申请号：US15451555
申请日：2017-03-07
申请人： Carl Zeiss SMT GmbH
发明人： Johannes Ruoff , Josef Rapp
IPC分类号： G03F7/20 , G21K1/02 , G02B26/02 , G02B5/00 , G02B17/06 , G02B13/22 , G02B5/08 , G21K1/06
CPC分类号： G03F7/702 , G02B5/005 , G02B5/0891 , G02B13/22 , G02B17/0652 , G02B17/0663 , G02B26/02 , G03F7/70091 , G03F7/701 , G03F7/7025 , G21K1/02 , G21K1/067
摘要： An imaging optical unit for EUV projection lithography serves to image an object field into an image field. Mirrors guide imaging light from the object field to the image field. An aperture stop is tilted by at least 1° in relation to a normal plane which is perpendicular to an optical axis. The aperture stop has a circular stop contour. In mutually perpendicular planes, a deviation of a numerical aperture NAx measured in one plane from a numerical aperture NAy measured in the other plane is less than 0.003, averaged over the field points of the image field. What emerges is an imaging optical unit, in which homogenization of an image-side numerical aperture is ensured so that an unchanging high structure resolution in the image plane is made possible, independently of an orientation of a plane of incidence of the imaging light in the image field.

9. 发明授权

US09551942B2 Controller for optical device, exposure method and apparatus, and method for manufacturing device 有权
标题翻译：用于光学装置的控制器，曝光方法和装置以及制造装置的方法
公开(公告)号：US09551942B2
公开(公告)日：2017-01-24
申请号：US14991667
申请日：2016-01-08
申请人： NIKON CORPORATION
发明人： Soichi Owa
IPC分类号： G03F7/20
CPC分类号： G03F7/70191 , G03F7/20 , G03F7/70091 , G03F7/70108 , G03F7/70116 , G03F7/70141 , G03F7/702 , G03F7/70291
摘要： An exposure method for exposing a mask pattern, which includes plural types of patterns, with a high throughput and optimal illumination conditions for each type of pattern. The method includes guiding light from a first spatial light modulator illuminated with pulse lights of illumination light to a second spatial light modulator and exposing a wafer with light from the second spatial light modulator, accompanied by: controlling a conversion state of the second spatial light modulator including a plurality of second mirror elements; and controlling a conversion state of the first spatial light modulator including a plurality of first mirror elements to control intensity distribution of the illumination light on a predetermined plane between the first spatial light modulator and the second spatial light modulator.
摘要翻译：一种曝光方法，用于以每种类型图案的高通量和最佳照明条件曝光包括多种图案的掩模图案。该方法包括将来自照明光的脉冲光照射的第一空间光调制器的光引导到第二空间光调制器，并且用来自第二空间光调制器的光曝光晶片，伴随着：控制第二空间光调制器包括多个第二镜元件; 以及控制包括多个第一反射镜元件的第一空间光调制器的转换状态，以控制照明光在第一空间光调制器和第二空间光调制器之间的预定平面上的强度分布。

10. 发明申请

US20160299433A1 ILLUMINATION SYSTEM AND METHOD OF FORMING FIN STRUCTURE USING THE SAME 有权
标题翻译：照明系统及使用其形成细微结构的方法
公开(公告)号：US20160299433A1
公开(公告)日：2016-10-13
申请号：US14714357
申请日：2015-05-18
申请人： United Microelectronics Corp.
发明人： En-Chiuan Liou , Yu-Cheng Tung
IPC分类号： G03F7/20 , G03F7/36
CPC分类号： G03F7/203 , G03F7/2002 , G03F7/70091 , G03F7/70125 , G03F7/7025
摘要： An illumination system includes a light source used to generate a light and an opaque plate. The opaque plate is disposed between the light source and a photomask and includes an annular aperture and an aperture dipole. The annular aperture has an inner side and an outer side. The aperture dipole includes at least one first aperture and at least one second aperture. The first aperture and the second aperture connected to the annular aperture respectively and protruding out from the outer side of the annular aperture are disposed symmetrically with respect to a center of the annular aperture.
摘要翻译：照明系统包括用于产生光和不透明板的光源。不透明板设置在光源和光掩模之间，并且包括环形孔和孔偶极子。环形孔具有内侧和外侧。孔径偶极子包括至少一个第一孔径和至少一个第二孔径。分别连接到环形孔并从环形孔的外侧突出的第一孔和第二孔相对于环形孔的中心对称设置。

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