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1. 发明授权

US07951672B2 Measurement and control of strained devices 有权
标题翻译：应变装置的测量和控制
公开(公告)号：US07951672B2
公开(公告)日：2011-05-31
申请号：US12904731
申请日：2010-10-14
申请人： Daniel C. Wack , Ady Levy , John Fielden
发明人： Daniel C. Wack , Ady Levy , John Fielden
IPC分类号： H01L21/336
CPC分类号： G01B11/245 , G01B11/16 , G01B2210/56 , G01L5/0047
摘要： A method that includes measuring stress on at least one of a monitor substrate, a production substrate, and a proxy device on a production substrate to produce stress data, measuring shape on at least one of a proxy device on a production substrate and a production device on a production substrate to produce shape data, and inputting the stress data and the shape data into an elastic deformation calculation to determine a stress value for a production device.
摘要翻译：一种方法，其包括测量生产基板上的监视器基板，生产基板和代理装置中的至少一个上的应力，以产生应力数据，在生产基板上的代理装置和生产装置中的至少一个上测量形状在生产基板上产生形状数据，并将应力数据和形状数据输入到弹性变形计算中以确定生产装置的应力值。

2. 发明申请

US20110027919A1 Measurement and control of strained devices 有权
公开(公告)号：US20110027919A1
公开(公告)日：2011-02-03
申请号：US12904731
申请日：2010-10-14
申请人： Daniel C. Wack , Ady Levy , John Fielden
发明人： Daniel C. Wack , Ady Levy , John Fielden
IPC分类号： H01L21/66 , G06F19/00 , G01L1/00
CPC分类号： G01B11/245 , G01B11/16 , G01B2210/56 , G01L5/0047
摘要： A method that includes measuring stress on at least one of a monitor substrate, a production substrate, and a proxy device on a production substrate to produce stress data, measuring shape on at least one of a proxy device on a production substrate and a production device on a production substrate to produce shape data, and inputting the stress data and the shape data into an elastic deformation calculation to determine a stress value for a production device.

3. 发明授权

US07838309B1 Measurement and control of strained devices 有权
标题翻译：应变装置的测量和控制
公开(公告)号：US07838309B1
公开(公告)日：2010-11-23
申请号：US12199633
申请日：2008-08-27
申请人： Daniel C. Wack , Ady Levy , John Fielden
发明人： Daniel C. Wack , Ady Levy , John Fielden
IPC分类号： H01L21/00
CPC分类号： G01B11/245 , G01B11/16 , G01B2210/56 , G01L5/0047
摘要： A method that includes measuring stress on at least one of a monitor substrate, a production substrate, and a proxy device on a production substrate to produce stress data, measuring shape on at least one of a proxy device on a production substrate and a production device on a production substrate to produce shape data, and inputting the stress data and the shape data into an elastic deformation calculation to determine a stress value for a production device.
摘要翻译：一种方法，其包括测量生产基板上的监视器基板，生产基板和代理装置中的至少一个上的应力，以产生应力数据，在生产基板上的代理装置和生产装置中的至少一个上测量形状在生产基板上产生形状数据，并将应力数据和形状数据输入到弹性变形计算中以确定生产装置的应力值。

4. 发明授权

US07826071B2 Parametric profiling using optical spectroscopic systems 有权
标题翻译：使用光谱系统进行参数分析
公开(公告)号：US07826071B2
公开(公告)日：2010-11-02
申请号：US11868740
申请日：2007-10-08
申请人： Andrei V. Shchegrov , Anatoly Fabrikant , Mehrdad Nikoonahad , Ady Levy , Daniel C. Wack , Noah Bareket , Walter Mieher , Ted Dziura
发明人： Andrei V. Shchegrov , Anatoly Fabrikant , Mehrdad Nikoonahad , Ady Levy , Daniel C. Wack , Noah Bareket , Walter Mieher , Ted Dziura
IPC分类号： G01B11/14
CPC分类号： G03F7/70616 , G01N21/211 , G01N21/47 , G01N21/4788 , G01N21/9501 , G01N21/956 , G01N21/95607 , G01N2021/213 , G03F7/70625 , G03F7/70641
摘要： A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.
摘要翻译：构建种子轮廓的画廊，并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点，由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较，以便达到参数的值。也可以考虑在周期性结构之上或之下的膜层。可以使用诸如反射率Rs，Rp和椭偏参数的不同辐射参数来测量衍射结构和相关膜。一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数，以获得更准确的测量。可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺，以便补偿轮廓参数中的任何误差。

5. 发明申请

US20090135416A1 Parametric Profiling Using Optical Spectroscopic Systems 有权
标题翻译：使用光谱系统进行参数分析
公开(公告)号：US20090135416A1
公开(公告)日：2009-05-28
申请号：US11868740
申请日：2007-10-08
申请人： Andrei V. Shchegrov , Anatoly Fabrikant , Mehrdad Nikoonahad , Ady Levy , Daniel C. Wack , Noah Bareket , Walter Mieher , Ted Dziura
发明人： Andrei V. Shchegrov , Anatoly Fabrikant , Mehrdad Nikoonahad , Ady Levy , Daniel C. Wack , Noah Bareket , Walter Mieher , Ted Dziura
IPC分类号： G01B11/28 , G01J3/00 , G01B11/00
CPC分类号： G03F7/70616 , G01N21/211 , G01N21/47 , G01N21/4788 , G01N21/9501 , G01N21/956 , G01N21/95607 , G01N2021/213 , G03F7/70625 , G03F7/70641
摘要： A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.
摘要翻译：构建种子轮廓的画廊，并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点，由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较，以便达到参数的值。也可以考虑在周期性结构之上或之下的膜层。可以使用诸如反射率Rs，Rp和椭偏参数的不同辐射参数来测量衍射结构和相关膜。一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数，以获得更准确的测量。可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺，以便补偿轮廓参数中的任何误差。

6. 发明授权

US07280230B2 Parametric profiling using optical spectroscopic systems 有权
标题翻译：使用光谱系统进行参数分析
公开(公告)号：US07280230B2
公开(公告)日：2007-10-09
申请号：US10327466
申请日：2002-12-19
申请人： Andrei V. Shchegrov , Anatoly Fabrikant , Mehrdad Nikoonahad , Ady Levy , Daniel C. Wack , Noah Bareket , Walter Mieher , Ted Dziura
发明人： Andrei V. Shchegrov , Anatoly Fabrikant , Mehrdad Nikoonahad , Ady Levy , Daniel C. Wack , Noah Bareket , Walter Mieher , Ted Dziura
IPC分类号： G01B11/28
CPC分类号： G03F7/70616 , G01N21/211 , G01N21/47 , G01N21/4788 , G01N21/9501 , G01N21/956 , G01N21/95607 , G01N2021/213 , G03F7/70625 , G03F7/70641
摘要： A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.
摘要翻译：构建种子轮廓的画廊，并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点，由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较，以便达到参数的值。也可以考虑在周期性结构之上或之下的膜层。不同的辐射参数，例如反射率R S，R P和椭偏参数可用于测量衍射结构和相关膜。一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数，以获得更准确的测量。可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺，以便补偿轮廓参数中的任何误差。

7. 发明授权

US08045179B1 Bright and dark field scatterometry systems for line roughness metrology 有权
标题翻译：用于线粗糙度计量的明暗场景散射系统
公开(公告)号：US08045179B1
公开(公告)日：2011-10-25
申请号：US12275078
申请日：2008-11-20
申请人： Guorong Vera Zhuang , Steven R. Spielman , Leonid Poslavsky , Daniel C. Wack , John Fielden
发明人： Guorong Vera Zhuang , Steven R. Spielman , Leonid Poslavsky , Daniel C. Wack , John Fielden
IPC分类号： G01B11/30
CPC分类号： G01B11/303 , G01B2210/56
摘要： Line edge roughness or line width roughness of a feature on a sample may be determined from incident radiation scattered from the feature. An amount of ordered scattered radiation characterized by a discrete diffraction order is determined and a diffuse scattered radiation signal is measured. A ratio between an intensity of the ordered scattered incident radiation and an intensity of the diffuse scattered radiation signal is determined. The line edge roughness or line width roughness is determined from the ratio.
摘要翻译：样品上特征的线边缘粗糙度或线宽粗糙度可以从从特征散射的入射辐射来确定。确定以离散衍射级为特征的有序散射辐射量，并测量漫散射辐射信号。确定有序散射入射辐射的强度与漫散射辐射信号的强度之间的比率。线边缘粗糙度或线宽粗糙度由该比率确定。

8. 发明授权

US07515253B2 System for measuring a sample with a layer containing a periodic diffracting structure 有权
$System for measuring a sample with a layer containing a periodic diffracting structure$
标题翻译：用含有周期性衍射结构的层测量样品的系统
公开(公告)号：US07515253B2
公开(公告)日：2009-04-07
申请号：US11329500
申请日：2006-01-10
申请人： Noah Bareket , Daniel C. Wack , Guoheng Zhao
发明人： Noah Bareket , Daniel C. Wack , Guoheng Zhao
IPC分类号： G01B11/02
CPC分类号： G01N21/211 , G01N21/8422 , G01N2021/213
摘要： To measure the critical dimensions and other parameters of a one- or two-dimensional diffracting structure of a film, the calculation may be simplified by first performing a measurement of the thickness of the film, employing a film model that does not vary the critical dimension or parameters related to other characteristics of the structure. The thickness of the film may be estimated using the film model sufficiently accurately so that such estimate may be employed to simplify the structure model for deriving the critical dimension and other parameters related to the two-dimensional diffracting structure.
摘要翻译：为了测量膜的一维或二维衍射结构的临界尺寸和其它参数，可以通过首先进行薄膜厚度的测量来简化计算，使用不改变临界尺寸的膜模型或与结构的其他特征相关的参数。可以使用膜模型来充分准确地估计膜的厚度，使得可以采用这种估计来简化用于导出临界尺寸和与二维衍射结构相关的其它参数的结构模型。

9. 发明授权

US07511830B2 System for scatterometric measurements and applications 有权
标题翻译：散射测量和应用系统
公开(公告)号：US07511830B2
公开(公告)日：2009-03-31
申请号：US11945949
申请日：2007-11-27
申请人： Anatloy Fabrikant , Guoheng Zhao , Daniel C. Wack , Mehrdad Nikoonahad
发明人： Anatloy Fabrikant , Guoheng Zhao , Daniel C. Wack , Mehrdad Nikoonahad
IPC分类号： G01B11/24 , G01B11/14
CPC分类号： G01N21/45 , G01N21/21 , G01N21/4788 , G01N21/9501 , G01N2021/213 , G01N2021/217 , G01N2021/8416 , G02B5/18
摘要： Instead of constructing a full multi-dimensional look-up-table as a model to find the critical dimension or other parameters in scatterometry, regression or other optimized estimation methods are employed starting from a “best guess” value of the parameter. Eigenvalues of models that are precalculated may be stored and reused later for other structures having certain common characteristics to save time. The scatterometric data that is used to find the value of the one or more parameter can be limited to those at wavelengths that are less sensitive to the underlying film characteristics. A model for a three-dimensional grating may be constructed by slicing a representative structure into a stack of slabs and creating an array of rectangular blocks to approximate each slab. One dimensional boundary problems may be solved for each block which are then matched to find a two-dimensional solution for the slab. A three-dimensional solution can then be constructed from the two-dimensional solutions for the slabs to yield the diffraction efficiencies of the three-dimensional grating. This model can then be used for finding the one or more parameters of the diffracting structure in scatterometry. Line roughness of a surface can be measured by directing a polarized incident beam in an incident plane normal to the line grating and measuring the cross-polarization coefficient. The value of the one or more parameters may then be supplied to a stepper or etcher to adjust a lithographic or etching process.
摘要翻译：不需要构建一个完整的多维查找表作为模型来查找散点图中的关键维度或其他参数，而是从参数的“最佳猜测”值开始采用回归或其他优化的估计方法。预先计算的模型的特征值可以稍后存储并重用于具有某些共同特征的其他结构以节省时间。用于查找一个或多个参数的值的散点数据可以限于那些对底层薄膜特性较不敏感的波长数据。三维光栅的模型可以通过将代表性结构切片成一叠平板并且产生矩形块阵列来近似每个平板来构造。可以为每个块解决一维边界问题，然后将其匹配以找到板的二维解。然后可以从板的二维解决方案中构建三维解，以产生三维光栅的衍射效率。然后，该模型可用于在散射测量中找到衍射结构的一个或多个参数。可以通过将垂直于线光栅的入射平面中的偏振入射光束引导并测量交叉极化系数来测量表面的线粗糙度。然后可以将一个或多个参数的值提供给步进器或蚀刻器以调整光刻或蚀刻工艺。

10. 发明授权

US07099005B1 System for scatterometric measurements and applications 有权
标题翻译：散射测量和应用系统
公开(公告)号：US07099005B1
公开(公告)日：2006-08-29
申请号：US09671715
申请日：2000-09-27
申请人： Anatoly Fabrikant , Guoheng Zhao , Daniel C. Wack , Mehrdad Nikoonahad
发明人： Anatoly Fabrikant , Guoheng Zhao , Daniel C. Wack , Mehrdad Nikoonahad
IPC分类号： G01J4/00
CPC分类号： G01N21/45 , G01N21/21 , G01N21/4788 , G01N21/9501 , G01N2021/213 , G01N2021/217 , G01N2021/8416 , G02B5/18
摘要： Instead of constructing a full multi-dimensional look up table as a model to find the critical dimension or other parameters in scatterometry, regression or other optimized estimation methods are employed starting from a “best guess” value of the parameter. Eigenvalues of models that are precalculated may be stored and reused later for other structures having certain common characteristics to save time. The scatterometric data that is used to find the value of the one or more parameter can be limited to those at wavelengths that are less sensitive to the underlying film characteristics. A model for a three-dimensional grating may be constructed by slicing a representative structure into a stack of slabs and creating an array of rectangular blocks to approximate each slab. One dimensional boundary problems may be solved for each block which are then matched to find a two-dimensional solution for the slab. A three-dimensional solution can then be constructed from the two-dimensional solutions for the slabs to yield the diffraction efficiencies of the three-dimensional grating. This model can then be used for finding the one or more parameters of the diffracting structure in scatterometry. Line roughness of a surface can be measured by directing a polarized incident beam in an incident plane normal to the line grating and measuring the cross-polarization coefficient. The value of the one or more parameters may then be supplied to a stepper or etcher to adjust a lithographic or etching process.
摘要翻译：而不是构建一个完整的多维查找表作为模型来查找散点图中的关键维度或其他参数，而是从参数的“最佳猜测”值开始采用回归或其他优化的估计方法。预先计算的模型的特征值可以稍后存储并重用于具有某些共同特征的其他结构以节省时间。用于查找一个或多个参数的值的散点数据可以限于那些对底层薄膜特性较不敏感的波长数据。三维光栅的模型可以通过将代表性结构切片成一叠平板并且产生矩形块阵列来近似每个平板来构造。可以为每个块解决一维边界问题，然后将其匹配以找到板的二维解。然后可以从板的二维解决方案中构建三维解，以产生三维光栅的衍射效率。然后，该模型可用于在散射测量中找到衍射结构的一个或多个参数。可以通过将垂直于线光栅的入射平面中的偏振入射光束引导并测量交叉极化系数来测量表面的线粗糙度。然后可以将一个或多个参数的值提供给步进器或蚀刻器以调整光刻或蚀刻工艺。

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