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1. 发明授权

US09080991B2 Illuminating a specimen for metrology or inspection 有权
标题翻译：照亮样本进行计量或检查
公开(公告)号：US09080991B2
公开(公告)日：2015-07-14
申请号：US13073986
申请日：2011-03-28
申请人： Yung-Ho (Alex) Chuang , Vladimir Levinski , Xuefeng Liu , John Fielden
发明人： Yung-Ho (Alex) Chuang , Vladimir Levinski , Xuefeng Liu , John Fielden
IPC分类号： G01N21/00 , G01N21/95 , G01N21/47
CPC分类号： G01N21/9501 , G01N2021/479
摘要： Illumination subsystems of a metrology or inspection system, metrology systems, inspection systems, and methods for illuminating a specimen for metrology measurements or for inspection are provided. One illumination subsystem includes a light source configured to generate coherent pulses of light and a dispersive element positioned in the path of the coherent pulses of light, which is configured to reduce coherence of the pulses of light by mixing spatial and temporal characteristics of light distribution in the pulses of light. The illumination subsystem also includes an electro-optic modulator positioned in the path of the pulses of light exiting the dispersive element and which is configured to reduce the coherence of the pulses of light by temporally modulating the light distribution in the pulses of light. The illumination subsystem is configured to direct the pulses of light from the electro-optic modulator to a specimen.
摘要翻译：提供了计量或检查系统的照明子系统，计量系统，检查系统和用于计量测量或检查的照明样本的方法。一个照明子系统包括被配置为产生相干的光脉冲的光源和位于相干脉冲光的路径中的色散元件，该色散元件被配置为通过将光分布的空间和时间特征混合在一起来减小光脉冲的相干性光的脉冲。照明子系统还包括位于离开色散元件的光的脉冲的路径中的电光调制器，其被配置为通过暂时调制光脉冲中的光分布来减小光脉冲的相干性。照明子系统被配置为将来自电光调制器的光脉冲引导到样本。

2. 发明申请

US20120281275A1 Systems and Methods for Determining One or More Characteristics of a Specimen Using Radiation in the Terahertz Range 审中-公开
标题翻译：用于确定在太赫兹范围内使用辐射的样品的一个或多个特性的系统和方法
公开(公告)号：US20120281275A1
公开(公告)日：2012-11-08
申请号：US13552642
申请日：2012-07-19
申请人： Ady Levy , Samuel Ngai , Christopher F. Bevis , Stefano Concina , John Fielden , Walter Mieher , Dieter Mueller , Neil Richardson , Dan Wack , Larry Wagner
发明人： Ady Levy , Samuel Ngai , Christopher F. Bevis , Stefano Concina , John Fielden , Walter Mieher , Dieter Mueller , Neil Richardson , Dan Wack , Larry Wagner
IPC分类号： G06K7/10 , B05C11/00 , B05C9/00 , B05C11/02 , B05C5/02 , C23C16/44
CPC分类号： G01N21/9505 , G01N21/3581 , H01L22/12
摘要： Systems and methods for determining one or more characteristics of a specimen using radiation in the terahertz range are provided. One system includes an illumination subsystem configured to illuminate the specimen with radiation. The system also includes a detection subsystem configured to detect radiation propagating from the specimen in response to illumination of the specimen and to generate output responsive to the detected radiation. The detected radiation includes radiation in the terahertz range. In addition, the system includes a processor configured to determine the one or more characteristics of the specimen using the output.
摘要翻译：提供了使用太赫兹范围内的辐射来确定样本的一个或多个特征的系统和方法。一个系统包括被配置为用辐射照射样本的照明子系统。该系统还包括检测子系统，该检测子系统被配置为响应于样本的照射来检测从样本传播的辐射，并响应于检测到的辐射产生输出。检测到的辐射包括太赫兹范围内的辐射。另外，该系统包括配置成使用该输出来确定样本的一个或多个特性的处理器。

3. 发明授权

US08179530B2 Methods and systems for determining a critical dimension and overlay of a specimen 有权
标题翻译：用于确定试样的临界尺寸和覆盖层的方法和系统
公开(公告)号：US08179530B2
公开(公告)日：2012-05-15
申请号：US12830408
申请日：2010-07-05
申请人： Ady Levy , Kyle A. Brown , Rodney Smedt , Gary Bultman , Mehrdad Nikoonahad , Dan Wack , John Fielden , Ibrahim Abdul-Halim
发明人： Ady Levy , Kyle A. Brown , Rodney Smedt , Gary Bultman , Mehrdad Nikoonahad , Dan Wack , John Fielden , Ibrahim Abdul-Halim
IPC分类号： G01B11/00 , G01B11/30 , G01B11/14 , G01B11/28
CPC分类号： G01N21/27 , G01N21/211 , G01N21/47 , G01N21/636 , G01N21/64 , G01N21/9501 , G01N21/956 , G01N2021/646 , G01N2021/8825 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F7/7065 , G03F7/70658 , G03F7/707 , G03F7/70708 , H01J2237/31701 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.
摘要翻译：提供了用于监测半导体制造工艺的方法和系统。系统可以包括被配置为支撑样本并耦合到测量装置的台。测量装置可以包括照明系统和检测系统。照明系统和检测系统可以被配置为使得系统可以被配置为确定样本的多个属性。例如，系统可以被配置为确定样本的多个属性，包括但不限于临界尺寸和重叠错位; 缺陷和薄膜特性; 临界尺寸和缺陷; 临界尺寸和薄膜特性; 临界尺寸，薄膜特性和缺陷; 宏观缺陷和微缺陷; 平整度，薄膜特性和缺陷; 重叠错位和平整度; 植入物特征和缺陷; 附着力和厚度。以这种方式，测量装置可以执行多个光学和/或非光学测量和/或检查技术。

4. 发明授权

US08045179B1 Bright and dark field scatterometry systems for line roughness metrology 有权
标题翻译：用于线粗糙度计量的明暗场景散射系统
公开(公告)号：US08045179B1
公开(公告)日：2011-10-25
申请号：US12275078
申请日：2008-11-20
申请人： Guorong Vera Zhuang , Steven R. Spielman , Leonid Poslavsky , Daniel C. Wack , John Fielden
发明人： Guorong Vera Zhuang , Steven R. Spielman , Leonid Poslavsky , Daniel C. Wack , John Fielden
IPC分类号： G01B11/30
CPC分类号： G01B11/303 , G01B2210/56
摘要： Line edge roughness or line width roughness of a feature on a sample may be determined from incident radiation scattered from the feature. An amount of ordered scattered radiation characterized by a discrete diffraction order is determined and a diffuse scattered radiation signal is measured. A ratio between an intensity of the ordered scattered incident radiation and an intensity of the diffuse scattered radiation signal is determined. The line edge roughness or line width roughness is determined from the ratio.
摘要翻译：样品上特征的线边缘粗糙度或线宽粗糙度可以从从特征散射的入射辐射来确定。确定以离散衍射级为特征的有序散射辐射量，并测量漫散射辐射信号。确定有序散射入射辐射的强度与漫散射辐射信号的强度之间的比率。线边缘粗糙度或线宽粗糙度由该比率确定。

5. 发明申请

US20110027919A1 Measurement and control of strained devices 有权
公开(公告)号：US20110027919A1
公开(公告)日：2011-02-03
申请号：US12904731
申请日：2010-10-14
申请人： Daniel C. Wack , Ady Levy , John Fielden
发明人： Daniel C. Wack , Ady Levy , John Fielden
IPC分类号： H01L21/66 , G06F19/00 , G01L1/00
CPC分类号： G01B11/245 , G01B11/16 , G01B2210/56 , G01L5/0047
摘要： A method that includes measuring stress on at least one of a monitor substrate, a production substrate, and a proxy device on a production substrate to produce stress data, measuring shape on at least one of a proxy device on a production substrate and a production device on a production substrate to produce shape data, and inputting the stress data and the shape data into an elastic deformation calculation to determine a stress value for a production device.

6. 发明授权

US07838309B1 Measurement and control of strained devices 有权
标题翻译：应变装置的测量和控制
公开(公告)号：US07838309B1
公开(公告)日：2010-11-23
申请号：US12199633
申请日：2008-08-27
申请人： Daniel C. Wack , Ady Levy , John Fielden
发明人： Daniel C. Wack , Ady Levy , John Fielden
IPC分类号： H01L21/00
CPC分类号： G01B11/245 , G01B11/16 , G01B2210/56 , G01L5/0047
摘要： A method that includes measuring stress on at least one of a monitor substrate, a production substrate, and a proxy device on a production substrate to produce stress data, measuring shape on at least one of a proxy device on a production substrate and a production device on a production substrate to produce shape data, and inputting the stress data and the shape data into an elastic deformation calculation to determine a stress value for a production device.
摘要翻译：一种方法，其包括测量生产基板上的监视器基板，生产基板和代理装置中的至少一个上的应力，以产生应力数据，在生产基板上的代理装置和生产装置中的至少一个上测量形状在生产基板上产生形状数据，并将应力数据和形状数据输入到弹性变形计算中以确定生产装置的应力值。

7. 发明申请

US20100271621A1 METHODS AND SYSTEMS FOR DETERMINING A CRITICAL DIMENSION AND OVERLAY OF A SPECIMEN 有权
标题翻译：确定标本的关键尺寸和覆盖物的方法和系统
公开(公告)号：US20100271621A1
公开(公告)日：2010-10-28
申请号：US12830408
申请日：2010-07-05
申请人： Ady Levy , Kyle A. Brown , Rodney Smedt , Gary Bultman , Mehrdad Nikoonahad , Dan Wack , John Fielden , Ibrahim Abdul-Halim
发明人： Ady Levy , Kyle A. Brown , Rodney Smedt , Gary Bultman , Mehrdad Nikoonahad , Dan Wack , John Fielden , Ibrahim Abdul-Halim
IPC分类号： G01N21/00 , G01B11/14 , G01B11/00
CPC分类号： G01N21/27 , G01N21/211 , G01N21/47 , G01N21/636 , G01N21/64 , G01N21/9501 , G01N21/956 , G01N2021/646 , G01N2021/8825 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F7/7065 , G03F7/70658 , G03F7/707 , G03F7/70708 , H01J2237/31701 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.
摘要翻译：提供了用于监测半导体制造工艺的方法和系统。系统可以包括被配置为支撑样本并耦合到测量装置的台。测量装置可以包括照明系统和检测系统。照明系统和检测系统可以被配置为使得系统可以被配置为确定样本的多个属性。例如，系统可以被配置为确定样本的多个属性，包括但不限于临界尺寸和重叠错位; 缺陷和薄膜特性; 临界尺寸和缺陷; 临界尺寸和薄膜特性; 临界尺寸，薄膜特性和缺陷; 宏观缺陷和微缺陷; 平整度，薄膜特性和缺陷; 重叠错位和平整度; 植入物特征和缺陷; 附着力和厚度。以这种方式，测量装置可以执行多个光学和/或非光学测量和/或检查技术。

8. 发明申请

US20100091284A1 APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY 有权
标题翻译：用于使用散射检测来检测重叠错误的装置和方法
公开(公告)号：US20100091284A1
公开(公告)日：2010-04-15
申请号：US12641663
申请日：2009-12-18
申请人： Walter D. Mieher , Ady Levy , Boris Golovanevsky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher F. Bevis , John Fielden , Noah Bareket , Kenneth P. Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus G. Dziura , Mark Ghinovker
发明人： Walter D. Mieher , Ady Levy , Boris Golovanevsky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher F. Bevis , John Fielden , Noah Bareket , Kenneth P. Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus G. Dziura , Mark Ghinovker
IPC分类号： G01B11/00
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a −1st diffraction order and a +1st diffraction order. It is determined whether there are any overlay error between the first structures and the second structures using a scatterometry technique based on the detected spectra by (i) for each target, determining a first differential intensity between the −1st diffraction order and a +1st diffraction order, (ii) for a plurality of pairs of targets each having a first target and a second target, determining a second differential intensity between the first differential intensity of the first target and the first differential intensity of the second target, and (iii) determining any overlay error between the first structures and the second structures using a scatterometry technique based on the second differential intensities determined from each target pair.
摘要翻译：公开了用于确定样品的两层之间的重叠误差的技术，装置和目标。提供多个目标。每个目标包括第一和第二结构的一部分，并且每个目标被设计成在其第一和第二结构部分之间具有偏移。用电磁辐射照射靶，从而以第一衍射级和+ 1衍射级获得每个靶的光谱。使用基于检测到的光谱的第一结构和第二结构之间是否存在任何覆盖误差（i）对于每个目标，确定第一衍射级和第+第一衍射之间的第一差分强度（ii）对于具有第一目标和第二目标的多对目标对，确定第一目标的第一差分强度与第二目标的第一差分强度之间的第二差分强度，以及（iii）使用基于从每个目标对确定的第二差分强度的散射测量技术来确定第一结构和第二结构之间的任何覆盖误差。

9. 发明申请

US20080252889A1 SYSTEMS AND METHODS FOR MEASUREMENT OF A SPECIMEN WITH VACUUM ULTRAVIOLET LIGHT 有权
标题翻译：用真空紫外线灯测量样品的系统和方法
公开(公告)号：US20080252889A1
公开(公告)日：2008-10-16
申请号：US12103320
申请日：2008-04-15
申请人： John Fielden , Gary Janik , Shing Lee
发明人： John Fielden , Gary Janik , Shing Lee
IPC分类号： G01J4/00
CPC分类号： G01J3/10 , G01J3/0286 , G01J3/36 , G01N21/211 , G01N2021/213
摘要： Various systems for measurement of a specimen are provided. One system includes an optical subsystem configured to perform measurements of a specimen using vacuum ultraviolet light and non-vacuum ultraviolet light. This system also includes a purging subsystem that is configured to maintain a purged environment around the optical subsystem during the measurements. Another system includes a cleaning subsystem configured to remove contaminants from a specimen prior to measurement. In one embodiment, the cleaning subsystem may be a laser-based cleaning subsystem that is configured to remove contaminants from a localized area on the specimen. The system also includes an optical subsystem that is configured to perform measurements of the specimen using vacuum ultraviolet light. The optical subsystem is disposed within a purged environment. In some embodiments, the system may include a differential purging subsystem that is configured to provide the purged environment for the optical subsystem.
摘要翻译：提供了用于测量样本的各种系统。一个系统包括被配置为使用真空紫外光和非真空紫外光进行样本的测量的光学子系统。该系统还包括清洗子系统，其被配置为在测量期间保持围绕光学子系统的净化环境。另一种系统包括清洁子系统，其构造成在测量之前从试样中去除污染物。在一个实施例中，清洁子系统可以是被配置为从样本上的局部区域去除污染物的基于激光的清洁子系统。该系统还包括被配置为使用真空紫外光进行样本的测量的光学子系统。光学子系统设置在净化的环境中。在一些实施例中，系统可以包括差分清洗子系统，其被配置为提供用于光学子系统的净化环境。

10. 发明授权

US07070476B2 In-situ metalization monitoring using eddy current measurements during the process for removing the film 有权
公开(公告)号：US07070476B2
公开(公告)日：2006-07-04
申请号：US11115835
申请日：2005-04-26
申请人： Kurt R. Lehman , Shing M. Lee , Walter Halmer Johnson, III , John Fielden
发明人： Kurt R. Lehman , Shing M. Lee , Walter Halmer Johnson, III , John Fielden
IPC分类号： B24B49/00
CPC分类号： G01N27/72
摘要： A method for measuring conductance of a sample using an eddy current probe with a sensing coil. The method includes N repetitions of measuring first and second voltage pairs including in-phase and quadrature components of an induced AC voltage in the sensing coil, calibrating the first signal based on the measured second signal at a different separation from the sample and reference material, determining a conductance function relating conductance with location along the selected curve, processing the calibrated first voltage pairs to generate a lift-off curve, determining an intersection voltage pair representing intersection of the lift-off curve with a selected curve, and determining the conductance of the sample from the intersection voltage pair and the conductance function.

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