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1. 发明授权

US08494088B2 Transmitting/receiving apparatus and method thereof in codebook based multiple antenna system 有权
标题翻译：发射/接收装置及其方法在基于码本的多天线系统中
公开(公告)号：US08494088B2
公开(公告)日：2013-07-23
申请号：US12768061
申请日：2010-04-27
申请人： David Mazzarese , Bruno Clerckx , Sang-Woo Lee
发明人： David Mazzarese , Bruno Clerckx , Sang-Woo Lee
IPC分类号： H04B7/04
CPC分类号： H04B7/0417 , H04B7/0478 , H04B7/0486 , H04B7/063 , H04B7/0632
摘要： A transmission/reception apparatus and a method thereof in a codebook-based multiple antenna system is provided. In a transmission method in a codebook-based Multiple Input Multiple Output (MIMO) system, feedback information is received from a receiver. A downlink Open-Loop Single User MIMO (OL SU-MIMO) codebook subset is determined within a base cookbook based on the feedback information. At least one data stream is transmitted via at least one antenna using the determined downlink OL SU-MIMO codebook subset.
摘要翻译：提供了一种基于码本的多天线系统的发送/接收装置及其方法。在基于码本的多输入多输出（MIMO）系统中的传输方法中，从接收机接收反馈信息。基于反馈信息，在基本食谱中确定下行链路开环单用户MIMO（OL SU-MIMO）码本子集。使用所确定的下行链路OL SU-MIMO码本子集，经由至少一个天线发送至少一个数据流。

2. 发明申请

US20110053633A1 Method and apparatus for triggering multicell MIMO schemes in multiple antenna system 有权
标题翻译：用于在多天线系统中触发多单元MIMO方案的方法和装置
公开(公告)号：US20110053633A1
公开(公告)日：2011-03-03
申请号：US12807117
申请日：2010-08-27
申请人： Shuangfeng Han , David Mazzarese , Sang-Woo Lee
发明人： Shuangfeng Han , David Mazzarese , Sang-Woo Lee
IPC分类号： H04B7/00
CPC分类号： H04B7/024 , H04B7/0619 , H04B7/0632 , H04B7/0639 , H04B7/0643 , H04B17/345
摘要： A method for triggering multicell MIMO schemes in a multiple antenna system includes transmitting, at a Mobile Station (MS), a first feedback information for single-cell closed-loop MIMO to a Base Station (BS); requesting, at the BS, Normalized Interference Power (NIP) feedback from the MS based on the first feedback information; feeding, at the MS, the NIP back to the BS; selecting, at the BS, a first NIP threshold and a second NIP threshold based on the NIP fed back from the MS; and requesting, at the MS, one of a first MIMO scheme and a second MIMO scheme by comparing the calculated first and second NIPs with the first NIP threshold and the second NIP threshold.
摘要翻译：用于在多天线系统中触发多单元MIMO方案的方法包括在移动站（MS）向基站（BS）发送用于单小区闭环MIMO的第一反馈信息; 基于第一反馈信息，从BS请求从MS获得的归一化干扰功率（NIP）反馈; 在MS处将NIP送回BS; 基于从MS反馈的NIP，在BS处选择第一NIP阈值和第二NIP阈值; 以及通过将计算的第一和第二NIP与第一NIP阈值和第二NIP阈值进行比较，在MS处请求第一MIMO方案和第二MIMO方案之一。

3. 发明授权

US08626070B2 Apparatus and method for mitigating inter-cell interference in multiple antenna system 有权
标题翻译：减轻多天线系统中小区间干扰的装置和方法
公开(公告)号：US08626070B2
公开(公告)日：2014-01-07
申请号：US13045922
申请日：2011-03-11
申请人： Sang-Woo Lee , Hee-Won Kang , Syuangfeng Han , David Mazzarese
发明人： Sang-Woo Lee , Hee-Won Kang , Syuangfeng Han , David Mazzarese
IPC分类号： H04B1/00 , H04B15/00
CPC分类号： H04L5/0032 , H04B7/024 , H04B7/0417 , H04B7/0456 , H04B7/0639 , H04W24/02 , H04W72/0406 , H04W72/082
摘要： An apparatus and method for mitigating inter-cell interference in a Multiple Input Multiple Output (MIMO) system are provided. The method includes allocating a serving band for providing service to at least one Mobile Station (MS) through scheduling, receiving at least one request set for at least one neighboring cell, from at least one MS, updating the at least one request set considering a serving band of each MS, and transmitting the updated at least one request set to the at least one neighboring cell. The request set includes at least one piece of information among a band and Precoding Matrix Index (PMI) for making a use restriction request to a neighboring cell that exerts interference on an MS.
摘要翻译：提供了一种用于减轻多输入多输出（MIMO）系统中的小区间干扰的装置和方法。该方法包括：通过调度来分配用于向至少一个移动台（MS）提供服务的服务频带，从至少一个MS接收至少一个相邻小区的至少一个请求集，从而考虑到并且将更新的至少一个请求集发送到至少一个相邻小区。请求集合包括用于对在MS上施加干扰的相邻小区进行使用限制请求的频带和预编码矩阵索引（PMI）中的至少一条信息。

4. 发明授权

US09432102B2 Apparatus and method for eliminating inter cell interference in multiple input multiple output wireless communication system 有权
标题翻译：用于消除多输入多输出无线通信系统中的小区间干扰的装置和方法
公开(公告)号：US09432102B2
公开(公告)日：2016-08-30
申请号：US12907291
申请日：2010-10-19
申请人： Sang-Woo Lee , Hee-Won Kang , Shuangfeng Han , David Mazzarese
发明人： Sang-Woo Lee , Hee-Won Kang , Shuangfeng Han , David Mazzarese
IPC分类号： H04B1/00 , H04B7/06 , H04B15/00 , H04B17/327 , H04B17/345
CPC分类号： H04B7/0639 , H04B17/327 , H04B17/345
摘要： Provided is a device and a method for eliminating inter-cell interference in Multiple Input Multiple Output (MIMO) wireless communication system. The method for operating a user equipment for eliminating the inter-cell interference includes determining one or more optimum bands among bands not requested to be restricted from a neighboring cell, determining at least one of band and Precoding Matrix Index (PMI) to be requested to be restricted to the neighboring cell among the determined one or more optimum bands, and feeding back at least one of the band and PMI to be requested to be restricted to the neighboring cell to a serving base station.
摘要翻译：提供了一种用于消除多输入多输出（MIMO）无线通信系统中的小区间干扰的装置和方法。用于操作用于消除小区间干扰的用户设备的方法包括：确定从邻近小区未被请求的限制的频带中的一个或多个最佳频带，确定要请求的频带和预编码矩阵索引（PMI）中的至少一个在所确定的一个或多个最佳频带中被限制到相邻小区，并将要被限制的要被限制的频带和PMI中的至少一个反馈给服务基站。

5. 发明授权

US08615198B2 Method and apparatus for triggering multicell MIMO schemes in multiple antenna system 有权
标题翻译：用于在多天线系统中触发多单元MIMO方案的方法和装置
公开(公告)号：US08615198B2
公开(公告)日：2013-12-24
申请号：US12807117
申请日：2010-08-27
申请人： Shuangfeng Han , David Mazzarese , Sang-Woo Lee
发明人： Shuangfeng Han , David Mazzarese , Sang-Woo Lee
IPC分类号： H04B1/00
CPC分类号： H04B7/024 , H04B7/0619 , H04B7/0632 , H04B7/0639 , H04B7/0643 , H04B17/345
摘要： A method for triggering multicell MIMO schemes in a multiple antenna system includes transmitting, at a Mobile Station (MS), a first feedback information for single-cell closed-loop MIMO to a Base Station (BS); requesting, at the BS, Normalized Interference Power (NIP) feedback from the MS based on the first feedback information; feeding, at the MS, the NIP back to the BS; selecting, at the BS, a first NIP threshold and a second NIP threshold based on the NIP fed back from the MS; and requesting, at the MS, one of a first MIMO scheme and a second MIMO scheme by comparing the calculated first and second NIPs with the first NIP threshold and the second NIP threshold.
摘要翻译：一种用于在多天线系统中触发多单元MIMO方案的方法包括在移动站（MS）向基站（BS）发送用于单小区闭环MIMO的第一反馈信息; 基于第一反馈信息，从BS请求从MS获得的归一化干扰功率（NIP）反馈; 在MS上将NIP送回BS; 基于从MS反馈的NIP，在BS处选择第一NIP阈值和第二NIP阈值; 以及通过将计算的第一和第二NIP与第一NIP阈值和第二NIP阈值进行比较，在MS处请求第一MIMO方案和第二MIMO方案之一。

6. 发明授权

US08145248B2 Apparatus and method for uplink beamforming and Space-Division Multiple Access (SDMA) in Multiple Input Multiple Output (MIMO) wireless communication systems 有权
标题翻译：用于多输入多输出（MIMO）无线通信系统中的上行波束成形和空分多址（SDMA）的装置和方法
公开(公告)号：US08145248B2
公开(公告)日：2012-03-27
申请号：US12407951
申请日：2009-03-20
申请人： Ki-Young Han , Sang-Woo Lee , June Moon , Byoung-Ha Yi , Cheol Mun
发明人： Ki-Young Han , Sang-Woo Lee , June Moon , Byoung-Ha Yi , Cheol Mun
IPC分类号： H04B7/00 , H04B1/38 , H04L27/00 , H04W4/00
CPC分类号： H04B7/0417 , H04B7/0404 , H04B7/0632 , H04B7/0634 , H04B7/0639 , H04L25/0204 , H04L25/0224
摘要： An apparatus and method for beamforming of a terminal in a Multiple Input Multiple Output (MIMO) wireless communication system are provided. The method includes transmitting sounding signals beamformed through a plurality of beamforming weight vectors in sequence, receiving control information indicative of an uplink weight vector determined by a base station and a maximum channel quality value using the sounding signals and transmitting a transmit signal beamformed with the uplink weight vector via a plurality of antennas.
摘要翻译：提供了一种用于在多输入多输出（MIMO）无线通信系统中的终端的波束成形的装置和方法。该方法包括：依次发送通过多个波束成形权重向量形成的波束信号，接收指示由基站确定的上行链路权重向量的控制信息和使用该探测信号的最大信道质量值，并发送与上行链路形成的发射信号波束权重向量经由多个天线。

7. 发明授权

US08124524B2 Methods of forming metal interconnection structures 有权
标题翻译：形成金属互连结构的方法
公开(公告)号：US08124524B2
公开(公告)日：2012-02-28
申请号：US12711812
申请日：2010-02-24
申请人： Kyung-In Choi , Sang-Woo Lee , Jong-Myeong Lee , Jong-Won Hong , Hyun-Bae Lee
发明人： Kyung-In Choi , Sang-Woo Lee , Jong-Myeong Lee , Jong-Won Hong , Hyun-Bae Lee
IPC分类号： H01L21/4763
CPC分类号： H01L23/5226 , H01L21/76846 , H01L21/76858 , H01L23/53223 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming a metal interconnection structure are provided. The methods include forming an insulating layer on a semiconductor substrate including a first metal interconnection. The insulating layer is patterned to form an opening that exposes the first metal interconnection. A first diffusion barrier layer is formed on the exposed first metal interconnection. After forming the first diffusion barrier layer, a second diffusion barrier layer is formed on the first diffusion barrier layer in the opening, the second diffusion barrier layer contacting a sidewall of the opening. A second metal interconnection is formed on the second diffusion barrier layer.
摘要翻译：提供形成金属互连结构的方法。所述方法包括在包括第一金属互连的半导体衬底上形成绝缘层。图案化绝缘层以形成露出第一金属互连的开口。在暴露的第一金属互连上形成第一扩散阻挡层。在形成第一扩散阻挡层之后，在开口中的第一扩散阻挡层上形成第二扩散阻挡层，第二扩散阻挡层与开口的侧壁接触。第二金属互连形成在第二扩散阻挡层上。

8. 发明申请

US20120024228A1 APPARATUS FOR FORMING THIN FILM 有权
标题翻译：用于形成薄膜的装置
公开(公告)号：US20120024228A1
公开(公告)日：2012-02-02
申请号：US13179463
申请日：2011-07-08
申请人： Sang-Woo Lee
发明人： Sang-Woo Lee
IPC分类号： C23C16/455
CPC分类号： C23C14/243 , C23C14/12
摘要： A thin film forming apparatus according to the embodiment includes a plurality of vapor deposition sources respectively separated from each other, a plurality of nozzle bodies connected to upper portions of the respective vapor deposition sources, and a plurality of nozzles connected to upper portions of the respective nozzle bodies. A nozzle hole of each of the nozzles is formed on a same vapor deposition line. Thus, according to the embodiment, the first organic material and the second organic material respectively sprayed through a first nozzle hole and a second nozzle hole can be uniformly mixed by disposing the first nozzle hole and the second nozzle on the same vapor deposition line.
摘要翻译：根据实施例的薄膜形成装置包括分别彼此分离的多个气相沉积源，连接到各个蒸镀源的上部的多个喷嘴体，以及连接到各个蒸镀源的上部的多个喷嘴喷嘴体。每个喷嘴的喷嘴孔形成在相同的蒸镀线上。因此，根据本实施例，通过将第一喷嘴孔和第二喷嘴设置在相同的蒸镀线上，能够均匀地混合通过第一喷嘴孔和第二喷嘴孔喷射的第一有机材料和第二有机材料。

9. 发明申请

US20110306205A1 Semiconductor Device and Method of Fabricating the Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110306205A1
公开(公告)日：2011-12-15
申请号：US13105195
申请日：2011-05-11
申请人： Byung-Hak Lee , Yu-Gyun Shin , Sang-Woo Lee , Sun-Ghil Lee , Jin-Bum Kim , Joon-Gon Lee
发明人： Byung-Hak Lee , Yu-Gyun Shin , Sang-Woo Lee , Sun-Ghil Lee , Jin-Bum Kim , Joon-Gon Lee
IPC分类号： H01L21/3205
CPC分类号： H01L21/28518 , H01L21/823807 , H01L21/823814
摘要： Methods of forming a semiconductor device include providing a substrate having an area including a source and a drain region of a transistor. A nickel (Ni) metal film is formed on the substrate area including the source and the drain region. A first heat-treatment process is performed including heating the substrate including the metal film from a first temperature to a second temperature at a first ramping rate and holding the substrate including the metal film at the second temperature for a first period of time. A second heat-treatment process is then performed including heating the substrate including the metal film from a third temperature to a fourth temperature at a second ramping rate and holding the substrate at the fourth temperature for a second period of time. The fourth temperature is different from the second temperature and the second period of time is different from the first period of time. The sequentially performed first and second heat-treatment processes convert the Ni metal layer on the source and drain regions into a NiSi layer on the source and drain regions and a NiSi2 layer between the NiSi layer and the source and drain regions.
摘要翻译：形成半导体器件的方法包括提供具有包括晶体管的源极和漏极区域的区域的衬底。在包括源极和漏极区域的衬底区域上形成镍（Ni）金属膜。执行第一热处理工艺，包括以第一斜率从第一温度至第二温度加热包括金属膜的基板，并将包含金属膜的基板在第二温度下保持第一时间段。然后执行第二热处理工艺，包括以第二斜率从第三温度至第四温度加热包括金属膜的衬底，并将衬底保持在第四温度第二时间段。第四温度与第二温度不同，第二时间段与第一时间段不同。依次执行的第一和第二热处理工艺将源极和漏极区域上的Ni金属层转换成源极和漏极区域上的NiSi层以及NiSi层与源极和漏极区域之间的NiSi 2层。

10. 发明授权

US07816257B2 Methods of fabricating semiconductor devices including contact plugs having laterally extending portions 有权
标题翻译：制造半导体器件的方法，包括具有横向延伸部分的接触插塞
公开(公告)号：US07816257B2
公开(公告)日：2010-10-19
申请号：US11409685
申请日：2006-04-24
申请人： Seong-Hwee Cheong , Gil-Heyun Choi , Sang-Woo Lee , Jin-Ho Park
发明人： Seong-Hwee Cheong , Gil-Heyun Choi , Sang-Woo Lee , Jin-Ho Park
IPC分类号： H01L21/4763
CPC分类号： H01L27/1108 , H01L21/28562 , H01L21/76802 , H01L21/76843 , H01L21/76846 , H01L27/0688 , H01L27/11
摘要： In a method of forming an integrated circuit device, an opening is formed extending through a first and a second insulating layers and through a semiconductor layer therebetween to a surface of a substrate. The opening includes a recess in a sidewall thereof between the first and second insulating layers adjacent the semiconductor layer. A conductive plug is formed on the sidewall of the opening and on the surface of the substrate and laterally extending into the recess between the first and second insulating layers to contact the semiconductor layer. The semiconductor layer may be selectively etched at the sidewall without substantially etching the first and second insulating layers at the sidewall of the opening to form the recess between the first and second insulating layers. Related devices are also discussed.
摘要翻译：在形成集成电路器件的方法中，形成延伸穿过第一和第二绝缘层并且穿过其间的半导体层到基板表面的开口。该开口包括在与半导体层相邻的第一和第二绝缘层之间的侧壁中的凹部。导电插塞形成在开口的侧壁和基板的表面上，并横向延伸到第一和第二绝缘层之间的凹部中以接触半导体层。可以在侧壁处选择性地蚀刻半导体层，而不必在开口的侧壁基本上蚀刻第一和第二绝缘层，以在第一和第二绝缘层之间形成凹部。还讨论了相关设备。

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