专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07675068B2 Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices 有权
标题翻译：处理碳化硅衬底以改善外延沉积以及所得结构和器件的方法
公开(公告)号：US07675068B2
公开(公告)日：2010-03-09
申请号：US11243581
申请日：2005-10-05
申请人： Davis Andrew McClure , Alexander Suvorov , John Adam Edmond , David Beardsley Slater, Jr.
发明人： Davis Andrew McClure , Alexander Suvorov , John Adam Edmond , David Beardsley Slater, Jr.
IPC分类号： H01L31/0312
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02658 , H01L21/046 , H01L21/2003 , H01L29/6606 , H01L33/0062 , Y10S438/931
摘要： A silicon carbide structure is disclosed that is suitable for use as a substrate in the manufacture of electronic devices such as light emitting diodes. The structure includes a silicon carbide wafer having a first and second surface and having a predetermined conductivity type and an initial carrier concentration; a region of implanted dopant atoms extending from the first surface into the silicon carbide wafer to a predetermined depth, with the region having a higher carrier concentration than the initial carrier concentration in the remainder of the wafer; and an epitaxial layer on the first surface of the silicon carbide wafer.
摘要翻译：公开了一种碳化硅结构，其适用于制造诸如发光二极管的电子器件中的基板。该结构包括具有第一表面和第二表面并具有预定导电类型和初始载流子浓度的碳化硅晶片; 注入掺杂剂原子的区域从第一表面延伸到碳化硅晶片到预定深度，该区域具有比晶片剩余部分中的初始载流子浓度更高的载流子浓度; 以及在碳化硅晶片的第一表面上的外延层。

2. 发明授权

US07138291B2 Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices 有权
公开(公告)号：US07138291B2
公开(公告)日：2006-11-21
申请号：US10248586
申请日：2003-01-30
申请人： Davis Andrew McClure , Alexander Suvorov , John Adam Edmond , David Beardsley Slater, Jr.
发明人： Davis Andrew McClure , Alexander Suvorov , John Adam Edmond , David Beardsley Slater, Jr.
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02658 , H01L21/046 , H01L21/2003 , H01L29/6606 , H01L33/0062 , Y10S438/931
摘要： A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and implant energies to form a dopant profile, annealing the implanted wafer, and growing an epitaxial layer on the implanted first surface of the wafer.

3. 发明授权

US08822315B2 Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices 有权
标题翻译：处理碳化硅衬底以改善外延沉积以及所得结构和器件的方法
公开(公告)号：US08822315B2
公开(公告)日：2014-09-02
申请号：US11022496
申请日：2004-12-22
申请人： Davis Andrew McClure , Alexander Suvorov , John Adam Edmond , David Beardsley Slater, Jr.
发明人： Davis Andrew McClure , Alexander Suvorov , John Adam Edmond , David Beardsley Slater, Jr.
IPC分类号： H01L21/425 , H01L33/00 , H01L21/20 , H01L21/04 , H01L29/66
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02658 , H01L21/046 , H01L21/2003 , H01L29/6606 , H01L33/0062 , Y10S438/931
摘要： A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and implant energies to form a dopant profile, annealing the implanted wafer, and growing an epitaxial layer on the implanted first surface of the wafer.
摘要翻译：公开了一种用于处理碳化硅衬底以改进其上的外延沉积并用作制造诸如发光二极管的器件中的前体的方法。该方法包括以下步骤：将第一导电类型的掺杂剂原子注入具有与一种或多种预定掺杂剂浓度的注入离子相同的导电类型的导电碳化硅晶片的第一表面，并且注入能量以形成掺杂剂分布，退火所述植入的晶片，以及在所述晶片的植入的第一表面上生长外延层。

4. 发明授权

US07294859B2 Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices 有权
标题翻译：处理碳化硅衬底以改善外延沉积以及所得结构和器件的方法
公开(公告)号：US07294859B2
公开(公告)日：2007-11-13
申请号：US11057661
申请日：2005-02-14
申请人： Davis Andrew McClure , Alexander Suvorov , John Adam Edmond , David Beardsley Slater, Jr.
发明人： Davis Andrew McClure , Alexander Suvorov , John Adam Edmond , David Beardsley Slater, Jr.
IPC分类号： H01L29/15
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02658 , H01L21/046 , H01L21/2003 , H01L29/6606 , H01L33/0062 , Y10S438/931
摘要： A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and implant energies to form a dopant profile, annealing the implanted wafer, and growing an epitaxial layer on the implanted first surface of the wafer.
摘要翻译：公开了一种用于处理碳化硅衬底以改进其上的外延沉积并用作制造诸如发光二极管的器件中的前体的方法。该方法包括以下步骤：将第一导电类型的掺杂剂原子注入具有与一种或多种预定掺杂剂浓度的注入离子相同的导电类型的导电碳化硅晶片的第一表面，并且注入能量以形成掺杂剂分布，退火所述植入的晶片，以及在所述晶片的植入的第一表面上生长外延层。

5. 发明授权

US07943406B2 LED fabrication via ion implant isolation 有权
标题翻译：通过离子注入隔离制造LED
公开(公告)号：US07943406B2
公开(公告)日：2011-05-17
申请号：US12327882
申请日：2008-12-04
申请人： David Beardsley Slater, Jr. , John Adam Edmond , Alexander Suvorov , Iain Hamilton
发明人： David Beardsley Slater, Jr. , John Adam Edmond , Alexander Suvorov , Iain Hamilton
IPC分类号： H01L21/00
CPC分类号： H01L33/24 , H01L21/2654 , H01L33/025 , H01L33/145 , H01L33/32 , H01L33/44 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. Some embodiments include a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, wherein portions of the epitaxial region are patterned into a mesa and wherein the sidewalls of the mesa comprise a resistive Group III nitride region for electrically isolating portions of the p-n junction. In method embodiments disclosed, the resistive border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask. In some method embodiments, a mesa is formed in the epitaxial region prior to implantation. During implantation, the epiwafer is mounted at an angle such that ions are implanted directly into the sidewalls of the mesa, thereby rendering portions of the mesa semi-insulating. The epiwafer may be rotated during ion implantation.
摘要翻译：半导体发光二极管包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型外延层形成pn结，型层和n型外延层上的电阻性氮化镓区，并且邻近p型外延层，用于电隔离pn结的部分。在p型外延层上形成金属接触层。一些实施例包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型层形成pn结，其中所述外延区域的部分被图案化成台面，并且其中所述台面的侧壁包括用于电绝缘所述pn结的部分的电阻性III族氮化物区域。在公开的方法实施例中，通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻边界。可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。在一些方法实施例中，在植入之前在外延区域中形成台面。在植入期间，外延片安装成一定角度，使得离子直接注入到台面的侧壁中，从而使台面的部分半绝缘。在离子注入期间，外延膜可以旋转。

6. 发明申请

US20090104726A1 LED Fabrication Via Ion Implant Isolation 有权
标题翻译：通过离子植入物隔离制造LED
公开(公告)号：US20090104726A1
公开(公告)日：2009-04-23
申请号：US12327882
申请日：2008-12-04
申请人： David Beardsley Slater, JR. , John Adam Edmond , Alexander Suvorov , Iain Hamilton
发明人： David Beardsley Slater, JR. , John Adam Edmond , Alexander Suvorov , Iain Hamilton
IPC分类号： H01L21/00 , H01L21/04 , H01L21/18
CPC分类号： H01L33/24 , H01L21/2654 , H01L33/025 , H01L33/145 , H01L33/32 , H01L33/44 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. Some embodiments include a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, wherein portions of the epitaxial region are patterned into a mesa and wherein the sidewalls of the mesa comprise a resistive Group III nitride region for electrically isolating portions of the p-n junction. In method embodiments disclosed, the resistive border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask. In some method embodiments, a mesa is formed in the epitaxial region prior to implantation. During implantation, the epiwafer is mounted at an angle such that ions are implanted directly into the sidewalls of the mesa, thereby rendering portions of the mesa semi-insulating. The epiwafer may be rotated during ion implantation.
摘要翻译：半导体发光二极管包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型外延层形成pn结，型层和n型外延层上的电阻性氮化镓区，并且邻近p型外延层，用于电隔离pn结的部分。在p型外延层上形成金属接触层。一些实施例包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型层形成pn结，其中所述外延区域的部分被图案化成台面，并且其中所述台面的侧壁包括用于电绝缘所述pn结的部分的电阻性III族氮化物区域。在公开的方法实施例中，通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻边界。可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。在一些方法实施例中，在植入之前在外延区域中形成台面。在植入期间，外延片安装成一定角度，使得离子直接注入到台面的侧壁中，从而使台面的部分半绝缘。在离子注入期间，外延膜可以旋转。

7. 发明申请

US20100052004A1 LED Bonding Structures and Methods of Fabricating LED Bonding Structures 有权
标题翻译： LED接合结构和LED结合结构的制造方法
公开(公告)号：US20100052004A1
公开(公告)日：2010-03-04
申请号：US12614700
申请日：2009-11-09
申请人： David Beardsley Slater, JR. , John Adam Edmond
发明人： David Beardsley Slater, JR. , John Adam Edmond
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/38 , H01L33/62 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： An LED is disclosed that includes a conductive submount, a bond pad having a total volume less than 3×10−5 mm3 conductively joined to the submount, a first ohmic contact on the bond pad opposite from the submount, an epitaxial region comprising at least a p-type layer and an n-type layer on the first ohmic contact, and an electrode to the epitaxial region opposite from the first ohmic contact.
摘要翻译：公开了一种LED，其包括导电基座，导电接合到基座的总体积小于3×10-5mm 3的接合焊盘，在与基座相反的接合焊盘上的第一欧姆接触，至少包括外延区域第一欧姆接触上的p型层和n型层，以及与第一欧姆接触相对的外延区的电极。

8. 发明授权

US06825501B2 Robust Group III light emitting diode for high reliability in standard packaging applications 有权
标题翻译：坚固的III类发光二极管，用于标准封装应用中的高可靠性
公开(公告)号：US06825501B2
公开(公告)日：2004-11-30
申请号：US10145222
申请日：2002-05-14
申请人： John Adam Edmond , Brian Thibeault , David Beardsley Slater, Jr. , Gerald H. Negley , Van Allen Mieczkowski
发明人： John Adam Edmond , Brian Thibeault , David Beardsley Slater, Jr. , Gerald H. Negley , Van Allen Mieczkowski
IPC分类号： H01L3300
CPC分类号： H01L33/44 , H01L33/32 , H01L33/40 , H01L33/42
摘要： A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity condition. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contract layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. A method of manufacturing a light emitting diode and an LED lamp incorporating the diode are also disclosed.
摘要翻译：公开了一种物理上坚固的发光二极管，其在标准封装中提供高可靠性并且将经受住高温和高湿度条件。二极管包括具有p型III族氮化物收缩层的III族氮化物异质结二极管，与p型接触层的欧姆接触，以及在欧姆接触上的溅射沉积的氮化硅组合物钝化层。还公开了一种制造发光二极管的方法和结合二极管的LED灯。

9. 发明申请

US20110284875A1 HIGH EFFICIENCY GROUP III NITRIDE LED WITH LENTICULAR SURFACE 有权
标题翻译：高效率III类氮化物LED与光泽表面
公开(公告)号：US20110284875A1
公开(公告)日：2011-11-24
申请号：US13188361
申请日：2011-07-21
申请人： John Adam Edmond , David Beardsley Slater, JR. , Jayesh Bharathan , Matthew Donofrio
发明人： John Adam Edmond , David Beardsley Slater, JR. , Jayesh Bharathan , Matthew Donofrio
IPC分类号： H01L33/34
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region, and extending to said light emitting region.
摘要翻译：公开了一种高效率III族氮化物发光二极管。二极管包括选自由半导体材料和导电材料组成的组的衬底，在衬底上或衬底上的III族氮化物基发光区域，以及在发光区域上或上方含有碳化硅的透镜表面，并延伸到所述发光区域。

10. 发明授权

US07642121B2 LED bonding structures and methods of fabricating LED bonding structures 有权
标题翻译： LED结合结构和制造LED结合结构的方法
公开(公告)号：US07642121B2
公开(公告)日：2010-01-05
申请号：US12268466
申请日：2008-11-11
申请人： David Beardsley Slater, Jr. , John Adam Edmond
发明人： David Beardsley Slater, Jr. , John Adam Edmond
IPC分类号： H01L21/00 , H01L21/28
CPC分类号： H01L33/40 , H01L33/38 , H01L33/62 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： A method is disclosed for fabricating an LED The method includes providing an LED chip having an epitaxial region comprising at least a p-type layer and an n-type layer, an ohmic contact formed on at least one of the p-type layer or the n-type layer, and a bond pad formed on the ohmic contact. The bond pad has a total volume less than about 3×10−5 mm3. The LED chip is bonded to a submount via thermocompression or thermosonic bonding.
摘要翻译：公开了一种用于制造LED的方法。该方法包括提供具有包括至少p型层和n型层的外延区域的LED芯片，形成在p型层或者p型层中的至少一个上的欧姆接触 n型层和形成在欧姆接触上的接合焊盘。接合垫的总体积小于约3×10 -5 mm 3。 LED芯片通过热压或热超声键合键合到底座上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式