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1. 发明授权

US06909119B2 Low temperature formation of backside ohmic contacts for vertical devices 有权
标题翻译：低温形成用于垂直器件的背面欧姆接触
公开(公告)号：US06909119B2
公开(公告)日：2005-06-21
申请号：US10799140
申请日：2004-03-12
申请人： David B. Slater, Jr. , Alexander Suvorov
发明人： David B. Slater, Jr. , Alexander Suvorov
IPC分类号： H01L21/04 , H01L31/0224 , H01L33/00 , H01L33/34 , H01L33/36 , H01L31/0312
CPC分类号： H01L31/022408 , H01L21/046 , H01L21/0485 , H01L33/0095 , H01L33/34 , H01L33/36
摘要： A semiconductor device is disclosed that includes a semiconductor substrate having a first surface and a second surface and a first conductivity type and at least one epitaxial layer on the first surface of the semiconductor substrate. The epitaxial layer is formed of a material with a dissociation temperature below that of the semiconductor substrate. A zone of increased carrier concentration is in the semiconductor substrate and extends from the second surface of the semiconductor material toward the first surface. A layer of metal is deposited on the second surface of the semiconductor substrate and forms an ohmic contact at the interface of the metal and the zone of increased carrier concentration.
摘要翻译：公开了一种半导体器件，其包括在半导体衬底的第一表面上具有第一表面和第二表面以及第一导电类型和至少一个外延层的半导体衬底。外延层由解离温度低于半导体衬底的材料形成。增加载流子浓度的区域在半导体衬底中并从半导体材料的第二表面朝向第一表面延伸。金属层沉积在半导体衬底的第二表面上，并在金属界面和载流子浓度增加的区域形成欧姆接触。

2. 发明授权

US2014121A Dump body 失效
公开(公告)号：US2014121A
公开(公告)日：1935-09-10
申请号：US75148434
申请日：1934-11-05
申请人： ALEXANDER SUVOROV
发明人： ALEXANDER SUVOROV
IPC分类号： B61D9/02
CPC分类号： B61D9/02

3. 发明授权

US07943954B2 LED fabrication via ion implant isolation 有权
标题翻译：通过离子注入隔离制造LED
公开(公告)号：US07943954B2
公开(公告)日：2011-05-17
申请号：US12507288
申请日：2009-07-22
申请人： Yifeng Wu , Gerald H. Negley , David B. Slater, Jr. , Valeri F. Tsvetkov , Alexander Suvorov
发明人： Yifeng Wu , Gerald H. Negley , David B. Slater, Jr. , Valeri F. Tsvetkov , Alexander Suvorov
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/305
摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.
摘要翻译：半导体发光二极管包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型外延层形成pn结，型层和n型外延层上的电阻性氮化镓区，并且邻近p型外延层，用于电隔离pn结的部分。在p型外延层上形成金属接触层。在公开的方法实施例中，通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻性氮化镓边界。可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。

4. 发明授权

US07675068B2 Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices 有权
标题翻译：处理碳化硅衬底以改善外延沉积以及所得结构和器件的方法
公开(公告)号：US07675068B2
公开(公告)日：2010-03-09
申请号：US11243581
申请日：2005-10-05
申请人： Davis Andrew McClure , Alexander Suvorov , John Adam Edmond , David Beardsley Slater, Jr.
发明人： Davis Andrew McClure , Alexander Suvorov , John Adam Edmond , David Beardsley Slater, Jr.
IPC分类号： H01L31/0312
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02658 , H01L21/046 , H01L21/2003 , H01L29/6606 , H01L33/0062 , Y10S438/931
摘要： A silicon carbide structure is disclosed that is suitable for use as a substrate in the manufacture of electronic devices such as light emitting diodes. The structure includes a silicon carbide wafer having a first and second surface and having a predetermined conductivity type and an initial carrier concentration; a region of implanted dopant atoms extending from the first surface into the silicon carbide wafer to a predetermined depth, with the region having a higher carrier concentration than the initial carrier concentration in the remainder of the wafer; and an epitaxial layer on the first surface of the silicon carbide wafer.
摘要翻译：公开了一种碳化硅结构，其适用于制造诸如发光二极管的电子器件中的基板。该结构包括具有第一表面和第二表面并具有预定导电类型和初始载流子浓度的碳化硅晶片; 注入掺杂剂原子的区域从第一表面延伸到碳化硅晶片到预定深度，该区域具有比晶片剩余部分中的初始载流子浓度更高的载流子浓度; 以及在碳化硅晶片的第一表面上的外延层。

5. 发明申请

US20090309124A1 LED Fabrication via Ion Implant Isolation 有权
标题翻译：通过离子植入隔离制造LED
公开(公告)号：US20090309124A1
公开(公告)日：2009-12-17
申请号：US12507288
申请日：2009-07-22
申请人： Yifeng Wu , Gerald H. Negley , David B. Slater, JR. , Valeri F. Tsvetkov , Alexander Suvorov
发明人： Yifeng Wu , Gerald H. Negley , David B. Slater, JR. , Valeri F. Tsvetkov , Alexander Suvorov
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/305
摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.
摘要翻译：半导体发光二极管包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型外延层形成pn结，型层和n型外延层上的电阻性氮化镓区，并且邻近p型外延层，用于电隔离pn结的部分。在p型外延层上形成金属接触层。在公开的方法实施例中，通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻性氮化镓边界。可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。

6. 发明授权

US07138291B2 Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices 有权
公开(公告)号：US07138291B2
公开(公告)日：2006-11-21
申请号：US10248586
申请日：2003-01-30
申请人： Davis Andrew McClure , Alexander Suvorov , John Adam Edmond , David Beardsley Slater, Jr.
发明人： Davis Andrew McClure , Alexander Suvorov , John Adam Edmond , David Beardsley Slater, Jr.
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02658 , H01L21/046 , H01L21/2003 , H01L29/6606 , H01L33/0062 , Y10S438/931
摘要： A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and implant energies to form a dopant profile, annealing the implanted wafer, and growing an epitaxial layer on the implanted first surface of the wafer.

7. 发明申请

US20050285126A1 LED fabrication via ion implant isolation 有权
公开(公告)号：US20050285126A1
公开(公告)日：2005-12-29
申请号：US11154619
申请日：2005-06-16
申请人： Yifeng Wu , Gerald Negley , David Slater , Valeri Tsvetkov , Alexander Suvorov
发明人： Yifeng Wu , Gerald Negley , David Slater , Valeri Tsvetkov , Alexander Suvorov
IPC分类号： H01L29/22 , H01L33/30 , H01L33/32
CPC分类号： H01L33/32 , H01L33/305
摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.

8. 发明申请

US20050158892A1 Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices 有权
公开(公告)号：US20050158892A1
公开(公告)日：2005-07-21
申请号：US11022496
申请日：2004-12-22
申请人： Davis McClure , Alexander Suvorov , John Edmond , David Slater
发明人： Davis McClure , Alexander Suvorov , John Edmond , David Slater
IPC分类号： C30B1/00 , H01L21/00 , H01L21/04 , H01L21/20 , H01L21/336 , H01L33/00
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02658 , H01L21/046 , H01L21/2003 , H01L29/6606 , H01L33/0062 , Y10S438/931
摘要： A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and implant energies to form a dopant profile, annealing the implanted wafer, and growing an epitaxial layer on the implanted first surface of the wafer.

9. 发明申请

US20050151232A1 Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices 有权
标题翻译：处理碳化硅衬底以改善外延沉积以及所得结构和器件的方法
公开(公告)号：US20050151232A1
公开(公告)日：2005-07-14
申请号：US11057661
申请日：2005-02-14
申请人： Davis McClure , Alexander Suvorov , John Edmond , David Slater
发明人： Davis McClure , Alexander Suvorov , John Edmond , David Slater
IPC分类号： C30B1/00 , H01L21/00 , H01L21/04 , H01L21/20 , H01L21/336 , H01L33/00
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02658 , H01L21/046 , H01L21/2003 , H01L29/6606 , H01L33/0062 , Y10S438/931
摘要： A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and implant energies to form a dopant profile, annealing the implanted wafer, and growing an epitaxial layer on the implanted first surface of the wafer.
摘要翻译：公开了一种用于处理碳化硅衬底以改进其上的外延沉积并用作制造诸如发光二极管的器件中的前体的方法。该方法包括以下步骤：将第一导电类型的掺杂剂原子注入具有与一种或多种预定掺杂剂浓度的注入离子相同的导电类型的导电碳化硅晶片的第一表面，并且注入能量以形成掺杂剂分布，退火所述植入的晶片，以及在所述晶片的植入的第一表面上生长外延层。

10. 发明授权

US10541306B2 Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device 有权
公开(公告)号：US10541306B2
公开(公告)日：2020-01-21
申请号：US13610993
申请日：2012-09-12
申请人： Michael John O'Loughlin , Lin Cheng , Albert Augustus Burk, Jr. , Anant Kumar Agarwal , Alexander Suvorov
发明人： Michael John O'Loughlin , Lin Cheng , Albert Augustus Burk, Jr. , Anant Kumar Agarwal , Alexander Suvorov
IPC分类号： H01L29/16 , H01L21/02 , H01L21/322 , H01L21/265
摘要： A semiconductor die and a process for fabricating the semiconductor die are disclosed. The semiconductor die has a substrate and a silicon carbide (SiC) epitaxial structure on the substrate. The SiC epitaxial structure includes at least a first N-type SiC layer, at least a first P-type SiC layer, and carbon vacancy reduction material, which has been implanted into a surface of the SiC epitaxial structure. Further, the SiC epitaxial structure has been annealed to mobilize the carbon vacancy reduction material to diffuse carbon atoms substantially throughout the SiC epitaxial structure, thereby increasing an average carrier lifetime in the SiC epitaxial structure.

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