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1. 发明申请

US20050158892A1 Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices 有权
公开(公告)号：US20050158892A1
公开(公告)日：2005-07-21
申请号：US11022496
申请日：2004-12-22
申请人： Davis McClure , Alexander Suvorov , John Edmond , David Slater
发明人： Davis McClure , Alexander Suvorov , John Edmond , David Slater
IPC分类号： C30B1/00 , H01L21/00 , H01L21/04 , H01L21/20 , H01L21/336 , H01L33/00
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02658 , H01L21/046 , H01L21/2003 , H01L29/6606 , H01L33/0062 , Y10S438/931
摘要： A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and implant energies to form a dopant profile, annealing the implanted wafer, and growing an epitaxial layer on the implanted first surface of the wafer.

2. 发明申请

US20050151232A1 Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices 有权
标题翻译：处理碳化硅衬底以改善外延沉积以及所得结构和器件的方法
公开(公告)号：US20050151232A1
公开(公告)日：2005-07-14
申请号：US11057661
申请日：2005-02-14
申请人： Davis McClure , Alexander Suvorov , John Edmond , David Slater
发明人： Davis McClure , Alexander Suvorov , John Edmond , David Slater
IPC分类号： C30B1/00 , H01L21/00 , H01L21/04 , H01L21/20 , H01L21/336 , H01L33/00
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02658 , H01L21/046 , H01L21/2003 , H01L29/6606 , H01L33/0062 , Y10S438/931
摘要： A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and implant energies to form a dopant profile, annealing the implanted wafer, and growing an epitaxial layer on the implanted first surface of the wafer.
摘要翻译：公开了一种用于处理碳化硅衬底以改进其上的外延沉积并用作制造诸如发光二极管的器件中的前体的方法。该方法包括以下步骤：将第一导电类型的掺杂剂原子注入具有与一种或多种预定掺杂剂浓度的注入离子相同的导电类型的导电碳化硅晶片的第一表面，并且注入能量以形成掺杂剂分布，退火所述植入的晶片，以及在所述晶片的植入的第一表面上生长外延层。

3. 发明申请

US20050029526A1 Methods of Treating a Silicon Carbide Substrate for Improved Epitaxial Deposition and Resulting Structures and Devices 有权
标题翻译：处理碳化硅基板以改善外延沉积和结果结构和器件的方法
公开(公告)号：US20050029526A1
公开(公告)日：2005-02-10
申请号：US10709780
申请日：2004-05-27
申请人： Davis McClure , Alexander Suvorov , John Edmond , David Slater
发明人： Davis McClure , Alexander Suvorov , John Edmond , David Slater
IPC分类号： C30B1/00 , H01L21/00 , H01L21/04 , H01L21/20 , H01L21/336 , H01L33/00
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02658 , H01L21/046 , H01L21/2003 , H01L29/6606 , H01L33/0062 , Y10S438/931
摘要： A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and implant energies to form a dopant profile, annealing the implanted wafer, and growing an epitaxial layer on the implanted first surface of the wafer.
摘要翻译：公开了一种用于处理碳化硅衬底以改进其上的外延沉积并用作制造诸如发光二极管的器件中的前体的方法。该方法包括以下步骤：将第一导电类型的掺杂剂原子注入具有与一种或多种预定掺杂剂浓度的注入离子相同的导电类型的导电碳化硅晶片的第一表面，并且注入能量以形成掺杂剂分布，退火所述植入的晶片，以及在所述晶片的植入的第一表面上生长外延层。

4. 发明申请

US20060033111A1 Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices 有权
标题翻译：处理碳化硅衬底以改善外延沉积以及所得结构和器件的方法
公开(公告)号：US20060033111A1
公开(公告)日：2006-02-16
申请号：US11243581
申请日：2005-10-05
申请人： Davis McClure , Alexander Suvorov , John Edmond , David Slater
发明人： Davis McClure , Alexander Suvorov , John Edmond , David Slater
IPC分类号： H01L31/0312
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02658 , H01L21/046 , H01L21/2003 , H01L29/6606 , H01L33/0062 , Y10S438/931
摘要： A silicon carbide structure is disclosed that is suitable for use as a substrate in the manufacture of electronic devices such as light emitting diodes. The structure includes a silicon carbide wafer having a first and second surface and having a predetermined conductivity type and an initial carrier concentration; a region of implanted dopant atoms extending from the first surface into the silicon carbide wafer to a predetermined depth, with the region having a higher carrier concentration than the initial carrier concentration in the remainder of the wafer; and an epitaxial layer on the first surface of the silicon carbide wafer.
摘要翻译：公开了一种碳化硅结构，其适用于制造诸如发光二极管的电子器件中的基板。该结构包括具有第一表面和第二表面并具有预定导电类型和初始载流子浓度的碳化硅晶片; 注入掺杂剂原子的区域从第一表面延伸到碳化硅晶片到预定深度，该区域具有比晶片剩余部分中的初始载流子浓度更高的载流子浓度; 以及在碳化硅晶片的第一表面上的外延层。

5. 发明申请

US20050194584A1 LED fabrication via ion implant isolation 审中-公开
标题翻译：通过离子注入隔离制造LED
公开(公告)号：US20050194584A1
公开(公告)日：2005-09-08
申请号：US10987627
申请日：2004-11-12
申请人： David Slater , John Edmond , Alexander Suvorov , Iain Hamilton
发明人： David Slater , John Edmond , Alexander Suvorov , Iain Hamilton
IPC分类号： H01L29/06 , H01L31/0328
CPC分类号： H01L21/2654 , H01L33/025 , H01L33/145 , H01L33/24 , H01L33/32 , H01L33/44 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. Some embodiments include a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, wherein portions of the epitaxial region are patterned into a mesa and wherein the sidewalls of the mesa comprise a resistive Group III nitride region for electrically isolating portions of the p-n junction. In method embodiments disclosed, the resistive border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask. In some method embodiments, a mesa is formed in the epitaxial region prior to implantation. During implantation, the epiwafer is mounted at an angle such that ions are implanted directly into the sidewalls of the mesa, thereby rendering portions of the mesa semi-insulating. The epiwafer may be rotated during ion implantation.
摘要翻译：半导体发光二极管包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型外延层形成pn结，型层和n型外延层上的电阻性氮化镓区，并且邻近p型外延层，用于电隔离pn结的部分。在p型外延层上形成金属接触层。一些实施例包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型层形成pn结，其中所述外延区域的部分被图案化成台面，并且其中所述台面的侧壁包括用于电绝缘所述pn结的部分的电阻性III族氮化物区域。在公开的方法实施例中，通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻边界。可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。在一些方法实施例中，在植入之前在外延区域中形成台面。在植入期间，外延片安装成一定角度，使得离子直接注入到台面的侧壁中，从而使台面的部分半绝缘。在离子注入期间，外延膜可以旋转。

6. 发明申请

US20060060877A1 High efficiency group III nitride-silicon carbide light emitting diode 有权
标题翻译：高效率III族氮化硅 - 碳化硅发光二极管
公开(公告)号：US20060060877A1
公开(公告)日：2006-03-23
申请号：US10951042
申请日：2004-09-22
申请人： John Edmond , Jayesh Bharathan , David Slater
发明人： John Edmond , Jayesh Bharathan , David Slater
IPC分类号： H01L33/00
CPC分类号： H01L33/36 , H01L33/007
摘要： A method and resulting structures are disclosed for fabricating a high efficiency high extraction light emitting diode suitable for packaging. The method includes the steps of adding a light emitting active portion of wide-bandgap semiconductor material to a conductive silicon carbide substrate, joining the added active portion to a conductive sub-mounting structure, and removing a portion of the silicon carbide substrate opposite the added active portion to thereby reduce the overall thickness of the joined substrate, active portion and sub-mounting structure. The resulting the sub-mounting structure can be joined to a lead frame with the active portion positioned between the silicon carbide substrate and the sub-mounting structure to thereby use the sub-mounting structure to separate the active portion from the lead frame and avoid undesired electrical contact between the active portion and the lead frame.
摘要翻译：公开了一种制造适用于包装的高效率高抽提发光二极管的方法和结果。该方法包括以下步骤：将宽带隙半导体材料的发光有源部分添加到导电碳化硅基板，将添加的有源部分接合到导电子安装结构，并且将与添加的相邻的碳化硅基板相对的一部分从而减小接合的基板，有源部分和副安装结构的整体厚度。所得到的子安装结构可以连接到引线框架，其中有源部分位于碳化硅基板和子安装结构之间，从而使用子安装结构将有源部分与引线框架分开，并避免不必要的有源部分和引线框架之间的电接触。

7. 发明申请

US20070241360A1 LIGHT EMITTING DEVICES SUITABLE FOR FLIP-CHIP BONDING 有权
标题翻译：适用于片芯接合的发光装置
公开(公告)号：US20070241360A1
公开(公告)日：2007-10-18
申请号：US11772419
申请日：2007-07-02
申请人： David Slater, Jr. , Jayesh Bharathan , John Edmond , Mark Raffetto , Anwar Mohammed , Peter Andrews , Gerald Negley
发明人： David Slater, Jr. , Jayesh Bharathan , John Edmond , Mark Raffetto , Anwar Mohammed , Peter Andrews , Gerald Negley
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L33/38 , H01L2224/04026 , H01L2224/26175 , H01L2224/291 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/014 , H01L2924/00
摘要： Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.
摘要翻译：通过在电极和底座中的至少一个上形成预定图案的导电芯片附着材料，并将其安装在基板上，并将底板上的电极和底板上的电极的底板配置在倒装芯片结构的底座上，发光器件死到底座。选择导电芯片附着材料的预定图案，以便当发光器件裸片安装到底座时，防止导电芯片附着材料接触具有相反导电类型的区域。导电芯片附接材料的预定图案可以提供小于由电极区域限定的体积以及电极和底座之间的距离的管芯附着材料的体积。还提供具有预定图案的导电芯片附着材料的发光器件裸片。在碳化硅基板等基板上具有氮化镓系发光区域的发光元件也可以通过将氮化镓系发光区域的电极安装在利用B的基板的倒装芯片配置中级环氧树脂。还提供了具有B级可固化模具环氧树脂的发光器件模具。

8. 发明申请

US20050095737A1 Robust group III light emitting diode for high reliability in standard packaging applications 有权
标题翻译：坚固的III类发光二极管，用于标准封装应用中的高可靠性
公开(公告)号：US20050095737A1
公开(公告)日：2005-05-05
申请号：US10983983
申请日：2004-11-08
申请人： John Edmond , Brian Thibeault , David Slater , Gerald Negley , Van Mieczkowski
发明人： John Edmond , Brian Thibeault , David Slater , Gerald Negley , Van Mieczkowski
IPC分类号： H01L21/318 , H01L33/32 , H01L33/40 , H01L33/42 , H01L33/44 , H01L21/00
CPC分类号： H01L33/44 , H01L33/32 , H01L33/40 , H01L33/42
摘要： A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. A method of manufacturing a light emitting diode and an LED lamp incorporating the diode are also disclosed.
摘要翻译：公开了一种物理上坚固的发光二极管，其在标准包装中提供高可靠性并且将承受高温和高湿度条件。二极管包括具有p型III族氮化物接触层的III族氮化物异质结二极管，与p型接触层的欧姆接触，以及在欧姆接触上的溅射沉积的氮化硅组合物钝化层。还公开了一种制造发光二极管的方法和结合二极管的LED灯。

9. 发明申请

US20100140636A1 Light Emitting Diode with Improved Light Extraction 有权
标题翻译：具有改进的光提取的发光二极管
公开(公告)号：US20100140636A1
公开(公告)日：2010-06-10
申请号：US12329713
申请日：2008-12-08
申请人： Matthew Donofrio , Hua-Shuang Kong , David Slater, JR. , John Edmond
发明人： Matthew Donofrio , Hua-Shuang Kong , David Slater, JR. , John Edmond
IPC分类号： H01L27/00 , F21V7/00
CPC分类号： H01L33/22 , H01L33/20 , H01L33/46
摘要： A light emitting diode is disclosed that includes an active region and a plurality of exterior surfaces. A light enhancement feature is present on at least portions of one of the exterior surfaces of the diode, with the light enhancement feature being selected from the group consisting of shaping and texturing. A light enhancement feature is present on at least portions of each of the other exterior surfaces of the diode, with these light enhancement features being selected from the group consisting of shaping, texturing, and reflectors.
摘要翻译：公开了一种包括有源区和多个外表面的发光二极管。光增强特征存在于二极管的一个外表面的至少一部分上，光增强特征选自由成形和纹理组成的组。在二极管的每个其它外表面的至少一部分上存在光增强特征，这些光增强特征选自由成形，纹理和反射器组成的组。

10. 发明申请

US20070085104A1 Robust Group III Light Emitting Diode for High Reliability in Standard Packaging Applications 有权
标题翻译：强大的III类发光二极管在标准封装应用中具有高可靠性
公开(公告)号：US20070085104A1
公开(公告)日：2007-04-19
申请号：US11539423
申请日：2006-10-06
申请人： John Edmond , Brian Thibeault , David Slater , Gerald Negley , Van Allen Mieczkowski
发明人： John Edmond , Brian Thibeault , David Slater , Gerald Negley , Van Allen Mieczkowski
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/44 , H01L33/32 , H01L33/40 , H01L33/42
摘要： A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. The contact layer, the ohmic contact and the passivation layer are made of materials that transmit light generated in the active heterojunction.
摘要翻译：公开了一种物理上坚固的发光二极管，其在标准包装中提供高可靠性并且将承受高温和高湿度条件。二极管包括具有p型III族氮化物接触层的III族氮化物异质结二极管，与p型接触层的欧姆接触，以及在欧姆接触上的溅射沉积的氮化硅组合物钝化层。接触层，欧姆接触和钝化层由透射在活性异质结中产生的光的材料制成。

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