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1. 发明申请

US20190273487A1 Multi-Level Gate Control for Transistor Devices 审中-公开
公开(公告)号：US20190273487A1
公开(公告)日：2019-09-05
申请号：US15909126
申请日：2018-03-01
申请人： Dialog Semiconductor (UK) Limited
发明人： Horst Knoedgen , Christoph N. Nagl , Nebojsa Jelaca , Frank Kronmueller , Ambreesh Bhattad
IPC分类号： H03K17/06 , H03K3/57 , H03K17/687
摘要： A circuit for operating a transistor device that acts as a switch is presented. The circuit includes the transistor device and a control circuit coupled to a gate of the transistor device. The control circuit is adapted to selectively apply at least a first voltage level, a second voltage level, and a third voltage level to the gate of the transistor device, wherein the first, second, and third voltage levels are distinct voltage levels. The disclosure further relates to a method of operating a transistor device that acts as a switch. The proposed circuit provides additional gate voltages, by contrast to conventional two-level gate drivers. By appropriate choice of the additional gate voltages, reverse mode conductance losses of the transistor device can be reduced and/or to the Safe Operating Area (SOA) of the transistor device can be improved.

2. 发明授权

US10333408B1 Compensation of level-shift capacitance 有权
公开(公告)号：US10333408B1
公开(公告)日：2019-06-25
申请号：US15963633
申请日：2018-04-26
申请人： Dialog Semiconductor (UK) Limited
发明人： Horst Knoedgen , Christoph N. Nagl , Nebojsa Jelaca , Frank Kronmueller , Ambreesh Bhattad
IPC分类号： H02M3/158 , H02M1/088 , H03K3/037
摘要： A half bridge circuit and a method for its operation are presented. The half bridge circuit contains a high-side switch, a latch for providing a drive signal for the high-side switch, a first transistor device acting as a level shifter for shifting a voltage level at an input of the latch. The first transistor device is coupled between a supply voltage level and ground, and the voltage level at the input of the latch is shifted in accordance with a current that flows through the first transistor device. A second transistor device is coupled between the supply voltage level and ground, in parallel to the first transistor device. There is a current mirror for mirroring a current that flows through the second transistor device. There is a circuit path for feeding the mirrored current to an intermediate node between the supply voltage level and the first transistor device.

3. 发明申请

US20160119992A1 Accurate Mains Time-Base for LED Light Driver 有权
标题翻译： LED灯驱动器的精准电源时基
公开(公告)号：US20160119992A1
公开(公告)日：2016-04-28
申请号：US14884850
申请日：2015-10-16
申请人： Dialog Semiconductor (UK) Limited
发明人： Julian Tyrrell , Sander Heuvelmans , Nebojsa Jelaca , Gary Hague
IPC分类号： H05B33/08
CPC分类号： H05B33/0845 , H05B33/0815 , Y02B20/346
摘要： A controller for a driver circuit of a solid state lighting (SSL) device is described. The driver circuit comprises a power converter to transfer energy from AC mains voltage to the SSL device. The controller determines a dim level for the SSL device. The controller also determines a synchronization signal by comparing a voltage derived from the input voltage with a pre-determined threshold. The controller determines a sequence of PWM pulses based on the synchronization signal. The controller operates the power converter in a first operation mode for supplying energy to the SSL device at a first energy level within the sequence of PWM pulses, and operates the power converter in a second operation mode in between the PWM pulses. The second energy level is lower than the first energy level and the first energy level and/or a width of the PWM pulses depend on the dim level.
摘要翻译：描述了用于固态照明（SSL）装置的驱动电路的控制器。驱动电路包括一个功率转换器，用于将能量从交流电源电压传输到SSL设备。控制器确定SSL设备的昏暗级别。控制器还通过将从输入电压导出的电压与预定阈值进行比较来确定同步信号。控制器基于同步信号确定PWM脉冲序列。所述控制器以第一操作模式操作所述功率转换器，以在所述PWM脉冲序列内的第一能量级向所述SSL装置提供能量，并且在所述PWM脉冲之间的第二操作模式下操作所述功率转换器。第二能级低于第一能级，并且第一能级和/或PWM脉冲的宽度取决于昏暗级别。

4. 发明授权

US10469065B2 Multi-level gate control for transistor devices 有权
公开(公告)号：US10469065B2
公开(公告)日：2019-11-05
申请号：US15909126
申请日：2018-03-01
申请人： Dialog Semiconductor (UK) Limited
发明人： Horst Knoedgen , Christoph N. Nagl , Nebojsa Jelaca , Frank Kronmueller , Ambreesh Bhattad
IPC分类号： H03K3/00 , H03K17/687 , H02M3/155 , H03K17/06 , H03K3/57 , H01L29/778
摘要： A circuit for operating a transistor device that acts as a switch is presented. The circuit includes the transistor device and a control circuit coupled to a gate of the transistor device. The control circuit is adapted to selectively apply at least a first voltage level, a second voltage level, and a third voltage level to the gate of the transistor device, wherein the first, second, and third voltage levels are distinct voltage levels. The disclosure further relates to a method of operating a transistor device that acts as a switch. The proposed circuit provides additional gate voltages, by contrast to conventional two-level gate drivers. By appropriate choice of the additional gate voltages, reverse mode conductance losses of the transistor device can be reduced and/or to the Safe Operating Area (SOA) of the transistor device can be improved.

5. 发明申请

US20190237967A1 Electrostatic Discharge Protection of Transistor Devices 审中-公开
公开(公告)号：US20190237967A1
公开(公告)日：2019-08-01
申请号：US15882461
申请日：2018-01-29
申请人： Dialog Semiconductor (UK) Limited
发明人： Horst Knoedgen , Christoph N. Nagl , Nebojsa Jelaca
IPC分类号： H02H9/04 , H01L27/06 , H01L27/02 , H01L29/20 , H01L21/66 , H01L25/00
CPC分类号： H02H9/046 , H01L22/14 , H01L25/50 , H01L27/0255 , H01L27/0266 , H01L27/0288 , H01L27/0605 , H01L27/0629 , H01L29/2003 , H01L29/778 , H01L29/866
摘要： An overvoltage protection circuit for a transistor device is presented. The overvoltage protection circuit comprises a first pin coupled to a gate terminal of the transistor device, an electrostatic discharge protection circuit coupled between a second pin and a source terminal of the transistor device, a first diode coupled between the first pin and the second pin, and a second diode coupled in parallel to the first diode between the first pin and the second pin. The forward direction of the first diode is opposite to the forward direction of the second diode. In addition, A method of measuring a gate leakage current of a transistor device and a method of bonding a transistor device coupled to such an overvoltage protection circuit are presented.

6. 发明授权

US10284078B1 Apparatus and method for limiting electromagnetic interferences in a switching converter 有权
公开(公告)号：US10284078B1
公开(公告)日：2019-05-07
申请号：US15841168
申请日：2017-12-13
申请人： Dialog Semiconductor (UK) Limited
发明人： Horst Knoedgen , Christoph N. Nagl , Nebojsa Jelaca
IPC分类号： H02M3/335 , H02M1/14 , H02M1/34 , H02M1/44 , H02M1/32
摘要： A method and apparatus for limiting or preventing electromagnetic interferences in a switching converter are presented. In particular, a power circuit provided with an active electromagnetic interference filter is presented. There is an electromagnetic interference EMI reduction circuit for use with a switching converter. This EMI reduction circuit has a current source and is adapted to regulate a voltage across the current source to provide a current having a constant average value. The switching converter is adapted to provide a converter current, and the current source constant average value may be substantially equal to an average value of the converter current. The circuit has a variable resistance; and an adjuster adapted to adjust the variable resistance based on the converter current. The adjuster may have a comparator, which is adapted to compare a voltage value at a terminal of a transistor switch, and a reference value.

7. 发明授权

US10218258B1 Apparatus and method for driving a power stage 有权
公开(公告)号：US10218258B1
公开(公告)日：2019-02-26
申请号：US15865802
申请日：2018-01-09
申请人： Dialog Semiconductor (UK) Limited
发明人： Christoph N. Nagl , Horst Knoedgen , Nebojsa Jelaca
IPC分类号： H02M1/088 , H02M1/08 , H02M1/38 , H02M3/158 , H02M1/00
摘要： A method and apparatus for driving a power stage is presented. In particular, the power stage is a half-bridge. In the method, there is a first power switch coupled to a second power switch via a switching node. The method steps include sensing a first control-terminal voltage of one of the first power switch and the second power switch and turning on the first power switch based on the first control-terminal voltage and sensing a second control-terminal voltage of one of the first power switch and the second power switch and turning on the second power switch based on the second control-terminal voltage. Optionally, the first power switch is turned on when the first control-terminal voltage has reached a first threshold value, and the second power switch is turned on when the second control-terminal voltage has reached a second threshold value.

8. 发明授权

US10965281B2 Circuit based on a III/V semiconductor and a method of operating the same 有权
公开(公告)号：US10965281B2
公开(公告)日：2021-03-30
申请号：US15714251
申请日：2017-09-25
申请人： Dialog Semiconductor (UK) Limited
发明人： Christoph Nagl , Nebojsa Jelaca , Horst Knoedgen
IPC分类号： H03B1/00 , H03K3/00 , H03K17/30 , H01L27/06 , H01L29/20 , H01L29/778 , H03K17/0814 , H01L29/872 , H03K17/0812 , H03K17/14 , G11C27/02
摘要： An electronic circuit provided with a III/V semiconductor domain, and a method of operating such a circuit is presented. In particular, the present application relates to electronic circuit based on a Gallium Nitride (GaN) semiconductor. GaN components must be controlled in a way that ensures proper operation over a wide variation of GaN parameters. There is a circuit comprising a first domain coupled to a second domain, the first domain being based on a III/V semiconductor; wherein the first domain comprises a first component and a second component. The second component being representative of an electrical characteristic of the first component. The second domain contains a sensor adapted to sense an electrical quantity of the second component and an input generator coupled to the sensor. The input generator is adapted to provide at least one input, based on the electrical quantity, to the first domain.

9. 发明授权

US10680614B1 Circuit and method for ultra-high-voltage to low-voltage level shifting 有权
公开(公告)号：US10680614B1
公开(公告)日：2020-06-09
申请号：US16568878
申请日：2019-09-12
申请人： Dialog Semiconductor (UK) Limited
发明人： Horst Knoedgen , Nebojsa Jelaca , Christoph N. Nagl
IPC分类号： H03L5/00 , H03K3/00 , H03K19/0185 , H03K5/24 , H03K3/037
摘要： The present document describes a level-shifter circuit and method to transmit data from a high-voltage domain to a low-voltage domain. The level-shifter circuit has a first current path with a first current control unit to set a first current based on a high-voltage data signal in the high-voltage domain; and a second current path with a second current control unit to set a second current based on the high-voltage data signal. Furthermore, the circuit has an isolation unit to transfer the first current and the second current from the high-voltage domain to the low-voltage domain; and a current comparator unit to compare the first current with the second current to provide a low-voltage data signal in the low-voltage domain, which corresponds to the high-voltage data signal.

10. 发明授权

US10381828B1 Overvoltage protection of transistor devices 有权
公开(公告)号：US10381828B1
公开(公告)日：2019-08-13
申请号：US15882461
申请日：2018-01-29
申请人： Dialog Semiconductor (UK) Limited
发明人： Horst Knoedgen , Christoph N. Nagl , Nebojsa Jelaca
IPC分类号： H02H9/04 , H01L27/06 , H01L27/02 , H01L29/20 , H01L21/66 , H01L25/00 , H01L29/866 , H01L29/778
摘要： An overvoltage protection circuit for a transistor device is presented. The overvoltage protection circuit comprises a first pin coupled to a gate terminal of the transistor device, an electrostatic discharge protection circuit coupled between a second pin and a source terminal of the transistor device, a first diode coupled between the first pin and the second pin, and a second diode coupled in parallel to the first diode between the first pin and the second pin. The forward direction of the first diode is opposite to the forward direction of the second diode. In addition, A method of measuring a gate leakage current of a transistor device and a method of bonding a transistor device coupled to such an overvoltage protection circuit are presented.

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