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    • 1. 发明授权
    • In-plane switching mode liquid crystal display device
    • 平面切换模式液晶显示装置
    • US07884910B2
    • 2011-02-08
    • US11166922
    • 2005-06-27
    • Do Sung KimByung Koo KangDo Young LeeSung Soo Chang
    • Do Sung KimByung Koo KangDo Young LeeSung Soo Chang
    • G02F1/1343
    • G02F1/134363G02F2201/122G02F2201/128G09G3/3614G09G3/3648G09G2300/0434G09G2300/0852G09G2320/0209
    • A liquid crystal display device includes a gate line formed on a substrate; first and second data lines crossing the gate line to form adjacent pixel regions in a direction of the gate line; pixel electrodes and common electrodes substantially parallel to each other and generating an in-plane electric field; a first pixel electrode line parallel to the first data line and spaced apart from the first data line by a first isolation distance; a second pixel electrode line spaced apart from the second data line by a second isolation distance; and a first common line parallel to the first data line and spaced apart from the first data line by a third isolation distance; a second common line spaced from the second data line by a fourth isolation distance, wherein the first isolation distance is shorter than the third isolation distance, and a parasitic capacitance between the first pixel electrode line and the first data line is greater than a parasitic capacitance between the second pixel electrode line and the second data line.
    • 液晶显示装置包括形成在基板上的栅极线; 第一和第二数据线与栅极线交叉以在栅极线的方向上形成相邻的像素区域; 像素电极和公共电极彼此平行并产生平面内的电场; 平行于所述第一数据线并与所述第一数据线间隔开第一隔离距离的第一像素电极线; 与第二数据线间隔第二隔离距离的第二像素电极线; 以及与第一数据线平行并且与第一数据线间隔第三隔离距离的第一公共线; 第二公共线与第二数据线间隔第四隔离距离,其中第一隔离距离短于第三隔离距离,并且第一像素电极线和第一数据线之间的寄生电容大于寄生电容 在第二像素电极线和第二数据线之间。
    • 2. 发明授权
    • In-plane switching mode liquid crystal display device
    • 平面切换模式液晶显示装置
    • US08102348B2
    • 2012-01-24
    • US11159299
    • 2005-06-23
    • Do Sung KimDo Young Lee
    • Do Sung KimDo Young Lee
    • G09G3/36
    • G02F1/134363G02F1/133784G02F1/136213G02F1/136227G09G3/3614G09G3/3648G09G2300/0434G09G2320/0209
    • An in-plane switching mode liquid crystal display device includes first and second substrates, a gate line on the first substrate, a data line crossing the gate line defining a unit pixel region, a thin film transistor at the crossing of the gate line and the data line, a pixel electrode line in parallel with the data line, a plurality of pixel electrodes formed to be protruded in an extended direction of the gate line from the pixel electrode line, a common electrode line adjacent to a data line of a neighboring pixel in the extended direction of the gate line and in parallel therewith, a plurality of common electrodes protruded from the common electrode line and alternately arranged in parallel with the plurality of pixel electrodes to generate an in-plane electric field, and a liquid crystal layer between the first and second substrates.
    • 面内切换模式液晶显示装置包括第一和第二基板,第一基板上的栅极线,与限定单位像素区域的栅极线交叉的数据线,在栅极线与第二基板的交叉处的薄膜晶体管 数据线,与数据线并行的像素电极线,形成为从像素电极线沿着栅极线的延伸方向突出的多个像素电极,与相邻像素的数据线相邻的公共电极线 在栅极线的延伸方向上与其平行地延伸的多个公共电极从公共电极线突出并与多个像素电极平行地交替布置以产生平面内电场,以及液晶层之间的液晶层, 第一和第二基板。
    • 4. 发明授权
    • Separation type unit pixel of 3-dimensional image sensor and manufacturing method thereof
    • 3维图像传感器的分离型单位像素及其制造方法
    • US08325221B2
    • 2012-12-04
    • US11917983
    • 2006-06-27
    • Do Young Lee
    • Do Young Lee
    • H04N13/02H04N13/00
    • H01L27/14634H01L27/14609H01L27/14623H01L27/14627H01L27/1464H01L27/14643H01L27/1469
    • A separation type unit pixel of an image sensor, which can control light that incidents onto a photodiode at various angles, and be suitable for a zoom function in a compact camera module by securing an incident angle margin, and a manufacturing method thereof are provided. The unit pixel of an image sensor includes: a first wafer including a photodiode containing impurities having an impurity type opposite to that of a semiconductor material and a pad for transmitting photoelectric charge of the photodiode to outside; a second wafer including a pixel array region in which transistors except the photodiode are arranged regularly, a peripheral circuit region having an image sensor structure except the pixel array, and a pad for connecting pixels with one another; and a connecting means connecting the pad of the first wafer and the pad of the second wafer. Accordingly, manufacturing processes can be simplified by constructing the upper wafer using only a photodiode and the lower wafer using the pixel array region except the photodiode, and costs are reduced since transistors are not included in the upper wafer portion, which in turn cannot affect the interaction with light.
    • 提供了一种图像传感器的分离型单位像素,其制造方法可以通过确保入射角度边缘来控制以各种角度发生在光电二极管上的光并适用于小型照相机模块中的变焦功能。 图像传感器的单位像素包括:包括具有与半导体材料相反的杂质的杂质的光电二极管的第一晶片和用于将光电二极管的光电荷传输到外部的焊盘; 包括除了光电二极管之外的晶体管被​​规则地排列的像素阵列区域的第二晶片,具有除像素阵列之外的图像传感器结构的外围电路区域和用于彼此连接像素的焊盘; 以及连接装置,其连接第一晶片的焊盘和第二晶片的焊盘。 因此,通过仅使用光电二极管构造上晶片,使用除了光电二极管之外的像素阵列区域的下晶片,可以简化制造工艺,并且由于晶体管不包括在上晶片部分中而导致成本降低,这又不会影响 与光的互动
    • 5. 发明授权
    • Pixel for picking up image signal and method of manufacturing the pixel
    • 用于拾取图像信号的像素和制造像素的方法
    • US08304822B2
    • 2012-11-06
    • US12377651
    • 2007-08-10
    • Do Young Lee
    • Do Young Lee
    • H01L31/062H01L31/113
    • H01L27/1463H01L27/14641H01L27/14643H01L27/14689
    • Provided is a pixel for picking up an image signal capable of suppressing an occurrence of a cross-talk. The pixel for picking up an image signal includes a substrate surrounded by a trench, a photodiode, and a pass transistor. The photodiode is formed at an upper portion of the substrate and includes a P-type diffusion area and an N-type diffusion area which are joined with each other in a longitudinal direction. The pass transistor is formed at the upper portion of the substrate and includes the one terminal that is the joined P-type diffusion area and the N-type diffusion area, the other terminal that is a floating diffusion area, and a gate terminal disposed between the two terminals. The pixel for picking up an image signal is surrounded by the trench which penetrates the substrate from the upper portion to the lower portion of the substrate, and the trench is filled with an insulator.
    • 提供了用于拾取能够抑制串扰发生的图像信号的像素。 用于拾取图像信号的像素包括由沟槽,光电二极管和传输晶体管围绕的衬底。 光电二极管形成在基板的上部,并且包括在纵向彼此接合的P型扩散区域和N型扩散区域。 传输晶体管形成在基板的上部,并且包括作为接合的P型扩散区域和N型扩散区域的一个端子,作为浮动扩散区域的另一端子和设置在 两个终端。 用于拾取图像信号的像素被从衬底的上部到下部穿透衬底的沟槽包围,并且沟槽填充有绝缘体。
    • 6. 发明授权
    • Liquid crystal display device
    • 液晶显示装置
    • US07812910B2
    • 2010-10-12
    • US11638519
    • 2006-12-14
    • Do Young Lee
    • Do Young Lee
    • G02F1/1343
    • G02F1/136286G02F1/134363G02F2001/13606
    • A liquid crystal display device includes gate and data lines on a first substrate, wherein the gate lines cross the data lines to define sub-pixels, thin film transistors adjacent to where the gate lines cross the data lines, pixel electrodes connected to the thin film transistors, common electrodes at left and right sides of the sub-pixels, wherein a first parasitic capacitance between a first data line arranged at the left side of a first sub-pixel and an adjacent first common electrode is smaller than a second parasitic capacitance between a second data line arranged at the right side of the first sub-pixel and an adjacent second common electrode, and a second substrate bonded to the first substrate with a layer of liquid crystal molecules there between.
    • 液晶显示装置在第一基板上包括栅极和数据线,其中栅极线与数据线交叉以限定子像素,邻近栅极线与数据线交叉的薄膜晶体管,与薄膜连接的像素电极 晶体管,子像素的左侧和右侧的公共电极,其中布置在第一子像素的左侧的第一数据线与相邻的第一公共电极之间的第一寄生电容小于第二子像素之间的第二寄生电容 布置在第一子像素的右侧的第二数据线和相邻的第二公共电极,以及与第一基板结合的第二基板,其间具有液晶分子层。
    • 7. 发明授权
    • Optical image receiving device having wide dynamic range
    • 具有宽动态范围的光学图像接收装置
    • US07733400B2
    • 2010-06-08
    • US10544774
    • 2004-02-07
    • Do Young Lee
    • Do Young Lee
    • H04N3/14H04N9/73H01L27/00
    • H04N5/3745H01L27/14643H04N5/3559
    • Provided is an optical image receiving device having a high and rapid sensitivity and a wide dynamic range manufacture in a CMOS process. The image receiving device includes a capacitor transistor for a special purpose in addition to a general structure of three transistors and a light receiving portion. The capacitor transistor has first and second source/drain ports connected to the capacitance node and the floating diffusion node, respectively, and is gated in response to activation of a predetermined capacitor control signal. In the CMOS optical image receiving device, the floating diffusion node is pumped over an external power voltage. Thus, the electronic potential of the floating diffusion node in the initialization state is much higher than the maximum voltage of the light receiving portion. Thus, the CMOS active pixel has a very high sensitivity in a region where the intensity of light is weak. Furthermore, since the sensitivity decreases in a region where the intensity of light is strong, the dynamic range thereof can be increased very large.
    • 提供了一种在CMOS工艺中具有高且快速灵敏度和宽动态范围制造的光学图像接收装置。 除了三个晶体管的一般结构和光接收部分之外,图像接收装置还包括用于特殊目的的电容晶体管。 电容晶体管具有分别连接到电容节点和浮动扩散节点的第一和第二源极/漏极端口,并响应于预定的电容器控制信号的激活而选通。 在CMOS光学图像接收装置中,浮动扩散节点被泵浦在外部电源电压上。 因此,处于初始化状态的浮动扩散节点的电位远高于光接收部分的最大电压。 因此,CMOS有源像素在光强弱的区域具有非常高的灵敏度。 此外,由于在强度强的区域中灵敏度降低,所以其动态范围可以非常大。
    • 8. 发明申请
    • PIXEL FOR PICKING UP IMAGE SIGNAL AND METHOD OF MANUFACTURING THE PIXEL
    • 用于拾取图像信号的像素和制造像素的方法
    • US20100127313A1
    • 2010-05-27
    • US12377651
    • 2007-08-10
    • Do Young Lee
    • Do Young Lee
    • H01L33/00H01L21/30
    • H01L27/1463H01L27/14641H01L27/14643H01L27/14689
    • Provided is a pixel for picking up an image signal capable of suppressing an occurrence of a cross-talk. The pixel for picking up an image signal includes a substrate surrounded by a trench, a photodiode, and a pass transistor. The photodiode is formed at an upper portion of the substrate and includes a P-type diffusion area and an N-type diffusion area which are joined with each other in a longitudinal direction. The pass transistor is formed at the upper portion of the substrate and includes the one terminal that is the joined P-type diffusion area and the N-type diffusion area, the other terminal that is a floating diffusion area, and a gate terminal disposed between the two terminals. The pixel for picking up an image signal is surrounded by the trench which penetrates the substrate from the upper portion to the lower portion of the substrate, and the trench is tilled with an insulator.
    • 提供了用于拾取能够抑制串扰发生的图像信号的像素。 用于拾取图像信号的像素包括由沟槽,光电二极管和传输晶体管围绕的衬底。 光电二极管形成在基板的上部,并且包括在纵向彼此接合的P型扩散区域和N型扩散区域。 传输晶体管形成在基板的上部,并且包括作为接合的P型扩散区域和N型扩散区域的一个端子,作为浮动扩散区域的另一端子和设置在 两个终端。 用于拾取图像信号的像素被从衬底的上部到下部穿透衬底的沟槽包围,并且沟槽用绝缘体填充。
    • 10. 发明授权
    • Separation type unit pixel of 3-dimensional image sensor and manufacturing method thereof
    • 3维图像传感器的分离型单位像素及其制造方法
    • US08669132B2
    • 2014-03-11
    • US13531530
    • 2012-06-23
    • Do Young Lee
    • Do Young Lee
    • H01L21/00
    • H01L27/14634H01L27/14609H01L27/14623H01L27/14627H01L27/1464H01L27/14643H01L27/1469
    • A separation type unit pixel of an image sensor, which can control light that incidents onto a photodiode at various angles, and be suitable for a zoom function in a compact camera module by securing an incident angle margin, and a manufacturing method thereof are provided. The unit pixel of an image sensor includes: a first wafer including a photodiode containing impurities having an impurity type opposite to that of a semiconductor material and a pad for transmitting photoelectric charge of the photodiode to outside; a second wafer including a pixel array region in which transistors except the photodiode are arranged regularly, a peripheral circuit region having an image sensor structure except the pixel array, and a pad for connecting pixels with one another; and a connecting means connecting the pad of the first wafer and the pad of the second wafer.
    • 提供了一种图像传感器的分离型单位像素,其制造方法可以通过确保入射角度边缘来控制以各种角度发生在光电二极管上的光并适用于小型照相机模块中的变焦功能。 图像传感器的单位像素包括:包括具有与半导体材料相反的杂质的杂质的光电二极管的第一晶片和用于将光电二极管的光电荷传输到外部的焊盘; 包括除了光电二极管之外的晶体管被​​规则地排列的像素阵列区域的第二晶片,具有除像素阵列之外的图像传感器结构的外围电路区域和用于彼此连接像素的焊盘; 以及连接装置,其连接第一晶片的焊盘和第二晶片的焊盘。