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1. 发明申请

US20110272004A1 Solar panels with opaque EVA film backseets 审中-公开
标题翻译：太阳能电池板采用不透明EVA膜背衬
公开(公告)号：US20110272004A1
公开(公告)日：2011-11-10
申请号：US12800004
申请日：2010-05-06
申请人： Robert F. Davis , E. David Santoleri
发明人： Robert F. Davis , E. David Santoleri
IPC分类号： H01L31/048
CPC分类号： B32B17/10788 , B32B17/10018 , B32B2327/12 , B32B2367/00 , H01L31/049 , Y02E10/50
摘要： Laminates of ethylene-vinyl acetate copolymer resin with opacifying pigment provide excellent performance as backing sheets for photovoltaic cells.
摘要翻译：具有不透明颜料的乙烯 - 乙酸乙烯酯共聚物树脂的层压材料作为光伏电池的背衬片提供优异的性能。

2. 发明授权

US10720539B2 Coextruded solar panel backsheet and method of manufacture 有权
公开(公告)号：US10720539B2
公开(公告)日：2020-07-21
申请号：US13626838
申请日：2012-09-25
申请人： E. David Santoleri , Robert F. Davis
发明人： E. David Santoleri , Robert F. Davis
IPC分类号： H01L31/049 , B32B27/34 , B32B27/20 , B32B27/08 , B32B27/28 , B32B27/04 , B32B27/06 , B32B27/18 , B32B7/00 , B32B7/10 , B32B7/02 , B29C48/49 , B29C48/08 , B29C48/025 , B29C48/10 , B29C48/305 , B29C48/30 , B29C48/28 , B29C48/285
摘要： An improved backsheet used in the construction of solar panels is disclosed. A method of manufacturing the backsheet and solar panel comprising the backsheet, including coextrusion processes are also disclosed. Additionally, a photovoltaic solar panel module comprising the backsheet of the invention is disclosed. The backsheet of the instant invention may comprise an exterior layer having inner and outer surfaces, a middle layer, having inner and outer surfaces, and an interior layer having inner and outer surfaces. In one embodiment of the invention, the outer surface of the middle layer may be adjoined to the inner surface of the exterior layer, and the inner surface of the middle layer may be adjoined to the outer surface of the interior layer. The exterior layer, middle layer, and interior layer may be adjoined via a co-extrusion process, thereby eliminating the need for the use of adhesives for bonding the layers of the backsheet together. The backsheet of the invention improves upon the efficiency, strength, weather resistance, cost, and useful life of the solar panels in which the backsheet is incorporated.

3. 发明申请

US20140083487A1 COEXTRUDED SOLAR PANEL BACKSHEET AND METHOD OF MANUFACTURE 审中-公开
标题翻译： COEXTREDED SOLAR PANEL BACKSHEET AND METHOD OF MANUFACTURE
公开(公告)号：US20140083487A1
公开(公告)日：2014-03-27
申请号：US13626838
申请日：2012-09-25
申请人： E. David Santoleri , Robert F. Davis
发明人： E. David Santoleri , Robert F. Davis
IPC分类号： H01L31/048 , B32B27/34 , B29C49/04 , B32B7/02 , B32B27/04 , B29C47/06 , H01L31/0203 , B32B27/06
摘要： An improved backsheet used in the construction of solar panels is disclosed. A method of manufacturing the backsheet and solar panel comprising the backsheet, including coextrusion processes are also disclosed. Additionally, a photovoltaic solar panel module comprising the backsheet of the invention is disclosed. The backsheet of the instant invention may comprise an exterior layer having inner and outer surfaces, a middle layer, having inner and outer surfaces, and an interior layer having inner and outer surfaces. In one embodiment of the invention, the outer surface of the middle layer may be adjoined to the inner surface of the exterior layer, and the inner surface of the middle layer may be adjoined to the outer surface of the interior layer. The exterior layer, middle layer, and interior layer may be adjoined via a co-extrusion process, thereby eliminating the need for the use of adhesives for bonding the layers of the backsheet together. The backsheet of the invention improves upon the efficiency, strength, weather resistance, cost, and useful life of the solar panels in which the backsheet is incorporated.
摘要翻译：公开了一种用于建造太阳能电池板的改进的底片。还公开了一种制造包括底片的底片和太阳能面板的方法，包括共挤出工艺。另外，公开了包括本发明的背板的光伏太阳能电池板组件。本发明的底片可以包括具有内表面和外表面的外层，具有内表面和外表面的中间层，以及具有内表面和外表面的内层。在本发明的一个实施例中，中间层的外表面可以与外层的内表面邻接，并且中间层的内表面可以邻接于内层的外表面。外层，中间层和内层可以通过共挤出方法邻接，由此不需要使用用于将底片的层粘合在一起的粘合剂。本发明的底片改善了其中结合有底片的太阳能面板的效率，强度，耐候性，成本和使用寿命。

4. 发明申请

US20120167955A1 Solar panels with clear encapsulant layer 审中-公开
标题翻译：太阳能电池板具有透明的密封层
公开(公告)号：US20120167955A1
公开(公告)日：2012-07-05
申请号：US12807423
申请日：2010-09-02
申请人： Robert F. Davis , E. David Santoleri
发明人： Robert F. Davis , E. David Santoleri
IPC分类号： H01L31/048
CPC分类号： H01L31/049 , Y02E10/50
摘要： Solar panels of ethylene-vinyl acetate copolymer resin having at least one layer of substantially clear encapsulant and a second layer of laminar encapsulant having a substantially clear layer and a pigmented layer provide excellent long term performance.
摘要翻译：具有至少一层基本上清楚的密封剂的乙烯 - 乙酸乙烯酯共聚物树脂的太阳能电池板和具有基本透明的层和着色层的第二层层状密封剂提供了优异的长期性能。

5. 发明申请

US20110120522A1 BRIGHT WHITE PROTECTIVE LAMINATES 审中-公开
标题翻译：明亮的白色保护层压板
公开(公告)号：US20110120522A1
公开(公告)日：2011-05-26
申请号：US13017504
申请日：2011-01-31
申请人： Carl P. Kernander , Robert F. Davis , Frank A. Mannarino , Marina Temchenko
发明人： Carl P. Kernander , Robert F. Davis , Frank A. Mannarino , Marina Temchenko
IPC分类号： H01L31/042 , B32B27/36 , B32B27/08 , B32B27/06
CPC分类号： B32B27/08 , B32B7/12 , B32B15/08 , B32B17/10623 , B32B17/10788 , B32B27/06 , B32B27/20 , B32B27/30 , B32B27/304 , B32B27/306 , B32B2307/712 , B32B2457/00 , H01L31/049 , H02S40/22 , Y02E10/52 , Y10T428/26 , Y10T428/269 , Y10T428/3154 , Y10T428/31544 , Y10T428/31678 , Y10T428/31681 , Y10T428/31699 , Y10T428/31786 , Y10T428/31797 , Y10T428/31935
摘要： Laminates of having a first outer layer of weatherable film, at least one mid layer, and a second outer layer containing an opacifying quantity of white pigment. The laminates are particularly useful for protecting photovoltaic cells, solar panels, and circuit boards. In photovoltaic cells, the laminates result in increased power generation.
摘要翻译：具有耐候性薄膜的第一外层，至少一个中间层和含有不透明量的白色颜料的第二外层的层压体。层压板特别适用于保护光伏电池，太阳能电池板和电路板。在光伏电池中，层压板导致发电量增加。

6. 发明授权

US07723154B1 Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities 失效
标题翻译：形成具有浅受主电导率的氧化锌基II-VI化合物半导体层的方法
公开(公告)号：US07723154B1
公开(公告)日：2010-05-25
申请号：US11551058
申请日：2006-10-19
申请人： Bunmi T. Adekore , Jonathan M. Pierce , Robert F. Davis , George B. Kenney
发明人： Bunmi T. Adekore , Jonathan M. Pierce , Robert F. Davis , George B. Kenney
IPC分类号： H01L21/00
CPC分类号： H01L21/02565 , H01L21/0237 , H01L21/02554 , H01L21/02573 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/425
摘要： A p-type ZnO-based II-VI compound semiconductor layer has silver, potassium and/or gold dopants therein at a net p-type dopant concentration of greater than about 1×1017 cm−3. A method of forming the layer includes using an atomic layer deposition (ALD) technique. This technique includes exposing a substrate to a combination of gases: a first reaction gas containing zinc at a concentration that is repeatedly transitioned between at least two concentration levels during a processing time interval, a second reaction gas containing oxygen and a p-type dopant gas containing at least one p-type dopant species selected from a group consisting of silver, potassium and gold. A concentration of oxygen in the second reaction gas may also be repeatedly transitioned between at least two concentration levels. The concentration of zinc in the first reaction gas and the concentration of oxygen in the second reaction gas may be transitioned in an alternating sequence, so that relatively high zinc concentrations in the first reaction gas overlap with relatively low oxygen concentrations in the second reaction gas and vice versa.
摘要翻译： p型ZnO基II-VI化合物半导体层在其中具有大于约1×1017cm-3的净p型掺杂剂浓度的银，钾和/或金掺杂剂。形成层的方法包括使用原子层沉积（ALD）技术。这种技术包括将基底暴露于气体组合中：在处理时间间隔内以至少两个浓度水平重复过渡浓度的锌的第一反应气体，含有氧的第二反应气体和p型掺杂气体含有选自银，钾和金的至少一种p型掺杂剂物质。第二反应气体中的氧浓度也可以在至少两个浓度水平之间重复地转变。第一反应气体中的锌的浓度和第二反应气体中的氧浓度可以以交替的顺序转变，使得第一反应气体中相对较高的锌浓度与第二反应气体中相对较低的氧浓度重叠，反之亦然。

7. 发明授权

US06608327B1 Gallium nitride semiconductor structure including laterally offset patterned layers 失效
标题翻译：包括横向偏移的图案化层的氮化镓半导体结构
公开(公告)号：US06608327B1
公开(公告)日：2003-08-19
申请号：US09031843
申请日：1998-02-27
申请人： Robert F. Davis , Ok-Hyun Nam
发明人： Robert F. Davis , Ok-Hyun Nam
IPC分类号： H01L310256
CPC分类号： H01L21/0262 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/007
摘要： A gallium nitride semiconductor layer is fabricated by masking an underlying gallium nitride layer with a first mask that includes a first array of openings therein and growing the underlying gallium nitride layer through the first array of openings and onto the first mask, to thereby form a first overgrown gallium nitride semiconductor layer. The first overgrown layer is then masked with the second mask that includes a second array of openings therein. The second array of openings is laterally offset from the first array of openings. The first overgrown gallium nitride layer is then grown through the second array of openings and onto the second mask, to thereby form a second overgrown gallium nitride semiconductor layer. Microelectronic devices may then be formed in the second overgrown gallium nitride semiconductor layer.
摘要翻译：通过用包括第一阵列开口的第一掩模掩蔽下面的氮化镓层来制造氮化镓半导体层，并通过第一开口阵列生长下面的氮化镓层，并且形成第一掩模杂草生长的氮化镓半导体层。然后用包括其中的第二开口阵列的第二掩模掩蔽第一长满的层。第二阵列的开口横向偏离第一阵列的开口。然后通过第二阵列的开口将第一长满的氮化镓层生长到第二掩模上，从而形成第二长满的氮化镓半导体层。然后可以在第二长满的氮化镓半导体层中形成微电子器件。

8. 发明授权

US06462355B1 Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates 有权
公开(公告)号：US06462355B1
公开(公告)日：2002-10-08
申请号：US09717717
申请日：2000-11-21
申请人： Kevin J. Linthicum , Thomas Gehrke , Darren B. Thomson , Eric P. Carlson , Pradeep Rajagopal , Robert F. Davis
发明人： Kevin J. Linthicum , Thomas Gehrke , Darren B. Thomson , Eric P. Carlson , Pradeep Rajagopal , Robert F. Davis
IPC分类号： H01L29267
CPC分类号： C30B25/02 , C30B29/406 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/0265
摘要： An underlying gallium nitride layer on a silicon carbide substrate is masked with a mask that includes an array of openings therein, and the underlying gallium nitride layer is etched through the array of openings to define posts in the underlying gallium nitride layer and trenches therebetween. The posts each include a sidewall and a top having the mask thereon. The sidewalls of the posts are laterally grown into the trenches to thereby form a gallium nitride semiconductor layer. During this lateral growth, the mask prevents nucleation and vertical growth from the tops of the posts. Accordingly, growth proceeds laterally into the trenches, suspended from the sidewalls of the posts. The sidewalls of the posts may be laterally grown into the trenches until the laterally grown sidewalls coalesce in the trenches to thereby form a gallium nitride semiconductor layer. The lateral growth from the sidewalls of the posts may be continued so that the gallium nitride layer grows vertically through the openings in the mask and laterally overgrows onto the mask on the tops of the posts, to thereby form a gallium nitride semiconductor layer. The lateral overgrowth can be continued until the grown sidewalls coalesce on the mask to thereby form a continuous gallium nitride semiconductor layer. Microelectronic devices may be formed in the continuous gallium nitride semiconductor layer.

9. 发明授权

US06376339B2 PENDEOEPITAXIAL METHODS OF FABRICATING GALLIUM NITRIDE SEMICONDUCTOR LAYERS ON SILICON CARBIDE SUBSTRATES BY LATERAL GROWTH FROM SIDEWALLS OF MASKED POSTS, AND GALLIUM NITRIDE SEMICONDUCTOR STRUCTURES FABRICATED THEREBY 有权
标题翻译：通过边缘生长形成的硅碳化物基板上的氮化钛半导体层的制备方法和氮化钛半导体结构的制备方法
公开(公告)号：US06376339B2
公开(公告)日：2002-04-23
申请号：US09780072
申请日：2001-02-09
申请人： Kevin J. Linthicum , Thomas Gehrke , Darren B. Thomson , Eric P. Carlson , Pradeep Rajagopal , Robert F. Davis
发明人： Kevin J. Linthicum , Thomas Gehrke , Darren B. Thomson , Eric P. Carlson , Pradeep Rajagopal , Robert F. Davis
IPC分类号： H01L2120
CPC分类号： C30B25/02 , C30B29/406 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/0265
摘要： An underlying gallium nitride layer on a silicon carbide substrate is masked with a mask that includes an array of openings therein, and the underlying gallium nitride layer is etched through the array of openings to define posts in the underlying gallium nitride layer and trenches therebetween. The posts each include a sidewall and a top having the mask thereon. The sidewalls of the posts are laterally grown into the trenches to thereby form a gallium nitride semiconductor layer. During this lateral growth, the mask prevents nucleation and vertical growth from the tops of the posts. Accordingly, growth proceeds laterally into the trenches, suspended from the sidewalls of the posts. The sidewalls of the posts may be laterally grown into the trenches until the laterally grown sidewalls coalesce in the trenches to thereby form a gallium nitride semiconductor layer. The lateral growth from the sidewalls of the posts may be continued so that the gallium nitride layer grows vertically through the openings in the mask and laterally overgrows onto the mask on the tops of the posts, to thereby form a gallium nitride semiconductor layer. The lateral overgrowth can be continued until the grown sidewalls coalesce on the mask to thereby form a continuous gallium nitride semiconductor layer. Microelectronic devices may be formed in the continuous gallium nitride semiconductor layer.
摘要翻译：在碳化硅衬底上的下面的氮化镓层用掩模进行掩模，该掩模包括其中的开口阵列，并且通过开口阵列蚀刻下面的氮化镓层，以在下面的氮化镓层和沟槽之间形成沟槽。所述柱各自包括侧壁和其上具有掩模的顶部。柱的侧壁横向生长到沟槽中，从而形成氮化镓半导体层。在这种侧向生长期间，面罩防止从柱的顶部成核和垂直生长。因此，生长横向进入沟槽，从柱的侧壁悬挂。柱的侧壁可以横向生长到沟槽中，直到横向生长的侧壁在沟槽中聚结，从而形成氮化镓半导体层。可以继续从柱的侧壁的横向生长，使得氮化镓层垂直地通过掩模中的开口生长，并且横向过度地延伸到柱的顶部上的掩模上，从而形成氮化镓半导体层。横向过度生长可以继续，直到生长的侧壁在掩模上聚结，从而形成连续的氮化镓半导体层。微电子器件可以形成在连续的氮化镓半导体层中。

10. 发明授权

US06251506B1 Polyvinylidene fluoride coated articles from resins formable at high temperatures 有权
标题翻译：来自树脂的聚偏二氟乙烯涂层制品可在高温下成型
公开(公告)号：US06251506B1
公开(公告)日：2001-06-26
申请号：US09272841
申请日：1999-03-19
申请人： Robert F. Davis , Benjamin Simkin , Keith L. Truog
发明人： Robert F. Davis , Benjamin Simkin , Keith L. Truog
IPC分类号： B32B702
CPC分类号： B32B27/08 , B29C41/22 , B29C51/002 , B29C51/10 , B29C51/14 , B29K2027/08 , B29K2027/16 , B29L2009/00 , B32B27/20 , B32B27/281 , B32B27/286 , B32B27/288 , B32B27/304 , B32B38/12 , B32B2379/08 , B32B2605/003 , B32B2605/18 , Y10T428/2495 , Y10T428/3154 , Y10T428/31544
摘要： Laminates of polyvinylidene fluoride films and sheets of resins thermoformable at temperatures greater than about 500° F. (260° C.), three dimensional structures formed therefrom and processes for their manufacture and use are disclosed.
摘要翻译：公开了聚偏二氟乙烯膜的层压板和在大于约500°F（260℃）的温度下可热成型的树脂片，由其形成的三维结构及其制造和使用方法。

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