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1. 发明授权

US09876139B2 Light-emitting device 有权
公开(公告)号：US09876139B2
公开(公告)日：2018-01-23
申请号：US15345185
申请日：2016-11-07
申请人： EPISTAR CORPORATION
发明人： Tzu-Chieh Hsu , Ching-San Tao , Chen Ou , Min-Hsun Hsieh , Chao-Hsing Chen
IPC分类号： H01L33/10 , H01L33/22 , H01L33/38 , H01L33/40 , H01L33/42
CPC分类号： H01L33/105 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/42
摘要： A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first dielectric layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first dielectric layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first dielectric layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.

2. 发明授权

US08866174B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08866174B2
公开(公告)日：2014-10-21
申请号：US13772149
申请日：2013-02-20
申请人： Epistar Corporation
发明人： Tzu-Chieh Hsu , Ching-San Tao , Chen Ou , Min-Hsun Hsieh , Chao Hsing Chen
IPC分类号： H01L33/00 , H01L33/20 , H01L33/22 , H01L33/42 , H01L33/40 , H01L33/38 , H01L33/10
CPC分类号： H01L33/20 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/42
摘要： A light-emitting device having a light-emitting stacked layer with a first conductivity type semiconductor layer is provided. A light-emitting layer is formed on the first conductivity type semiconductor layer. A second conductivity type semiconductor layer is formed on the light-emitting layer. The upper surface of the second conductivity type semiconductor layer is a textured surface. A planarization layer is formed on a first part of the second conductivity type semiconductor layer. A transparent conductive oxide layer is formed on the planarization layer and a second part of the second conductivity type semiconductor layer, including a first portion on the planarization layer and a second portion having a first plurality of cavities on the second conductivity type semiconductor layer. An electrode is formed on the first portion of the transparent conductive oxide layer, and a reflective metal layer is formed between the transparent conductive oxide layer and the electrode.
摘要翻译：提供具有第一导电型半导体层的发光层叠层的发光装置。在第一导电型半导体层上形成发光层。在发光层上形成第二导电型半导体层。第二导电类型半导体层的上表面是纹理表面。在第二导电型半导体层的第一部分上形成平坦化层。透明导电氧化物层形成在平坦化层和第二导电类型半导体层的第二部分上，包括平坦化层上的第一部分和在第二导电类型半导体层上具有第一多个空腔的第二部分。在透明导电氧化物层的第一部分上形成电极，并且在透明导电氧化物层和电极之间形成反射金属层。

3. 发明授权

US10686106B2 Optoelectronic element 有权
公开(公告)号：US10686106B2
公开(公告)日：2020-06-16
申请号：US15973091
申请日：2018-05-07
申请人： Epistar Corporation
发明人： Cheng-Nan Han , Tsung-Xian Lee , Min-Hsun Hsieh , Hung-Hsuan Chen , Hsin-Mao Liu , Hsing-Chao Chen , Ching-San Tao , Chih-Peng Ni , Tzer-Perng Chen , Jen-Chau Wu
IPC分类号： H01L33/58 , H01L33/38 , H01L33/46 , H01L33/44 , H01L33/20 , H01L23/00 , H01L33/48
摘要： The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.

4. 发明申请

US20150137167A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20150137167A1
公开(公告)日：2015-05-21
申请号：US14589683
申请日：2015-01-05
申请人： Epistar Corporation
发明人： Tzu-Chieh Hsu , Ching-San Tao , Chen Ou , Min-Hsun Hsieh , Chao-Hsing Chen
IPC分类号： H01L33/24 , H01L33/46 , H01L33/60
CPC分类号： H01L33/105 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/42
摘要： A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first planarization layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first planarization layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.
摘要翻译：一种发光器件，包括：包含第一导电类型半导体层的发光层叠层; 形成在所述第一导电型半导体层上的发光层; 以及形成在所述发光层上并且包括第一多个空腔的第二导电类型半导体层; 形成在所述第二导电类型半导体层的第一部分上的第一平坦化层; 第一透明导电氧化物层，其形成在所述第一平坦化层上和所述第二导电类型半导体层的第二部分上，所述第一透明导电氧化物层包括与所述第一平坦化层接触的第一部分，第二导电型半导体层的上表面; 形成在所述第一部分上的第一电极; 以及形成在第一透明导电氧化物层和第一电极之间的第一反射金属层。

5. 发明授权

US09530940B2 Light-emitting device with high light extraction 有权
标题翻译：具有高光提取功能的发光装置
公开(公告)号：US09530940B2
公开(公告)日：2016-12-27
申请号：US14589683
申请日：2015-01-05
申请人： EPISTAR CORPORATION
发明人： Tzu-Chieh Hsu , Ching-San Tao , Chen Ou , Min-Hsun Hsieh , Chao-Hsing Chen
IPC分类号： H01L33/42 , H01L33/22 , H01L33/10 , H01L33/38 , H01L33/40
CPC分类号： H01L33/105 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/42
摘要： A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first planarization layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first planarization layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.
摘要翻译：一种发光器件，包括：包含第一导电类型半导体层的发光层叠层; 形成在所述第一导电型半导体层上的发光层; 以及形成在所述发光层上并且包括第一多个空腔的第二导电类型半导体层; 形成在所述第二导电类型半导体层的第一部分上的第一平坦化层; 第一透明导电氧化物层，其形成在所述第一平坦化层上和所述第二导电类型半导体层的第二部分上，所述第一透明导电氧化物层包括与所述第一平坦化层接触的第一部分，第二导电型半导体层的上表面; 形成在所述第一部分上的第一电极; 以及形成在第一透明导电氧化物层和第一电极之间的第一反射金属层。

6. 发明授权

US11482651B2 Optoelectronic element having reflective layer in contact with transparent layer covering side and bottom surfaces of the optoelectronic element 有权
公开(公告)号：US11482651B2
公开(公告)日：2022-10-25
申请号：US16900557
申请日：2020-06-12
申请人： EPISTAR CORPORATION
发明人： Cheng-Nan Han , Tsung-Xian Lee , Min-Hsun Hsieh , Hung-Hsuan Chen , Hsin-Mao Liu , Hsing-Chao Chen , Ching-San Tao , Chih-Peng Ni , Tzer-Perng Chen , Jen-Chau Wu
IPC分类号： H01L33/58 , H01L33/38 , H01L33/46 , H01L33/44 , H01L23/00 , H01L33/20 , H01L33/48
摘要： The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.

7. 发明授权

US09142740B2 Optoelectronic element and manufacturing method thereof 有权
标题翻译：光电元件及其制造方法
公开(公告)号：US09142740B2
公开(公告)日：2015-09-22
申请号：US13886083
申请日：2013-05-02
申请人： EPISTAR CORPORATION
发明人： Cheng-Nan Han , Tsung-Xian Lee , Min-Hsun Hsieh , Hung-Hsuan Chen , Hsin-Mao Liu , Hsing-Chao Chen , Ching-San Tao , Chih-Peng Ni , Tzer-Perng Chen , Jen-Chau Wu , Masafumi Sano , Chih-Ming Wang
IPC分类号： H01L33/58 , H01L33/62 , H01L33/50 , H01L33/54 , H01L33/64
CPC分类号： H01L33/502 , H01L21/568 , H01L33/38 , H01L33/387 , H01L33/44 , H01L33/46 , H01L33/50 , H01L33/54 , H01L33/58 , H01L33/62 , H01L33/647 , H01L2224/04105 , H01L2224/19 , H01L2224/32245 , H01L2224/48091 , H01L2224/73265 , H01L2224/73267 , H01L2224/9222 , H01L2933/005 , H01L2933/0066 , H01L2924/00014
摘要： An optoelectronic element includes an optoelectronic unit having a first top surface; a first metal layer on the first top surface; a first transparent structure surrounding the optoelectronic unit and exposing the first top surface; and a first contact layer on the first transparent structure, including a connective part electrically connected with the first metal layer.
摘要翻译：光电子元件包括具有第一顶表面的光电单元; 第一顶表面上的第一金属层; 围绕光电单元并暴露第一顶表面的第一透明结构; 以及在第一透明结构上的第一接触层，包括与第一金属层电连接的连接部分。

8. 发明申请

US20130313594A1 OPTOELECTRONIC ELEMENT AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：光电元件及其制造方法
公开(公告)号：US20130313594A1
公开(公告)日：2013-11-28
申请号：US13886083
申请日：2013-05-02
申请人： EPISTAR CORPORATION
发明人： Cheng-Nan HAN , Tsung-Xian Lee , Min-Hsun Hsieh , Hung-Hsuan Chen , Hsin-Mao Liu , Hsing-Chao Chen , Ching-San Tao , Chih-Peng Ni , Tzer-Perng Chen , Jen-Chau Wu , Masafumi Sano , Chih-Ming Wang
IPC分类号： H01L33/58 , H01L33/50
CPC分类号： H01L33/502 , H01L21/568 , H01L33/38 , H01L33/387 , H01L33/44 , H01L33/46 , H01L33/50 , H01L33/54 , H01L33/58 , H01L33/62 , H01L33/647 , H01L2224/04105 , H01L2224/19 , H01L2224/32245 , H01L2224/48091 , H01L2224/73265 , H01L2224/73267 , H01L2224/9222 , H01L2933/005 , H01L2933/0066 , H01L2924/00014
摘要： An optoelectronic element includes an optoelectronic unit having a first top surface; a first metal layer on the first top surface; a first transparent structure surrounding the optoelectronic unit and exposing the first top surface; and a first contact layer on the first transparent structure, including a connective part electrically connected with the first metal layer.
摘要翻译：光电子元件包括具有第一顶表面的光电单元; 第一顶表面上的第一金属层; 围绕光电单元并暴露第一顶表面的第一透明结构; 以及在第一透明结构上的第一接触层，包括与第一金属层电连接的连接部分。

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