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1. 发明授权

US11024768B2 Semiconductor device 有权
公开(公告)号：US11024768B2
公开(公告)日：2021-06-01
申请号：US16709369
申请日：2019-12-10
申请人： EPISTAR CORPORATION
发明人： Tzu-Chieh Hsu , Yi-Wen Huang , Shou-Lung Chen , Hsin-Kang Chen
IPC分类号： H01L33/10 , H01S5/02 , H01L33/60 , H01L33/20 , H01L33/62 , H01L33/38 , H01S5/42 , H01S5/042 , H01S5/183
摘要： The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor stack, a trench formed in the semiconductor stack, a current confinement layer, a first electrode and a second electrode. The semiconductor stack includes a first reflective structure, a second reflective structure, and a cavity region. The cavity is between the first reflective structure and the second reflective structure and has a first surface and a second surface opposite to the first surface. The current confinement layer is in the second reflective structure. The first electrode and the second electrode are on the first surface.

2. 发明授权

US10892380B2 Light-emitting device 有权
公开(公告)号：US10892380B2
公开(公告)日：2021-01-12
申请号：US16673312
申请日：2019-11-04
申请人： EPISTAR CORPORATION
发明人： Yi-Ming Chen , Hao-Min Ku , Chih-Chiang Lu , Tzu-Chieh Hsu
IPC分类号： H01L33/10 , H01L33/40 , H01L33/38
摘要： This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface. A critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface. The reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface in a top view.

3. 发明申请

US20200274022A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
公开(公告)号：US20200274022A1
公开(公告)日：2020-08-27
申请号：US16871303
申请日：2020-05-11
申请人： EPISTAR CORPORATION
发明人： Hsin-Chih Chiu , Chih-Chiang Lu , Chun-Yu Lin , Ching-Huai Ni , Yi-Ming Chen , Tzu-Chieh Hsu , Ching-Pei Lin
IPC分类号： H01L33/00 , H01L33/46 , H01L33/38 , H01L33/62 , H01L33/22 , H01L25/075 , H01L21/00
摘要： A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

4. 发明申请

US20170309774A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
公开(公告)号：US20170309774A1
公开(公告)日：2017-10-26
申请号：US15643807
申请日：2017-07-07
申请人： EPISTAR CORPORATION
发明人： Hsin-Chih Chiu , Chih-Chiang Lu , Chun-Yu Lin , Ching-Huai Ni , Yi-Ming Chen , Tzu-Chieh Hsu , Ching-Pei Lin
IPC分类号： H01L33/00 , H01L25/075 , H01L33/62 , H01L33/38 , H01L21/00 , H01L33/22 , H01L33/46
CPC分类号： H01L33/0025 , H01L21/00 , H01L25/0753 , H01L33/0062 , H01L33/0079 , H01L33/0095 , H01L33/22 , H01L33/382 , H01L33/387 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

5. 发明授权

US09640728B2 Optoelectronic device and the manufacturing method thereof 有权
公开(公告)号：US09640728B2
公开(公告)日：2017-05-02
申请号：US15176890
申请日：2016-06-08
申请人： EPISTAR CORPORATION
发明人： Chun-Yu Lin , Yi-Ming Chen , Shih-Chang Lee , Yao-Ning Chan , Tzu-Chieh Hsu
IPC分类号： H01L33/00 , H01L33/38 , H01L33/22 , H01L33/40 , H01L33/42 , H01L33/44
CPC分类号： H01L33/387 , H01L33/06 , H01L33/22 , H01L33/38 , H01L33/405 , H01L33/42 , H01L33/44 , H01L2933/0016 , H01L2933/0025
摘要： An optoelectronic device is provided. The optoelectronic device comprises: an optoelectronic system for emitting light; multiple contact regions on the optoelectronic system and separated from one another; and multiple fingers on the optoelectronic system and opposite to the multiple contact regions; wherein a first contact region in the multiple contact regions is between two adjacent fingers, and a first distance between the first contact region and one of the adjacent fingers is between 5% and 50% of a second distance between the two adjacent fingers.

6. 发明申请

US20160204305A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US20160204305A1
公开(公告)日：2016-07-14
申请号：US14442319
申请日：2013-07-03
申请人： EPISTAR CORPORATION
发明人： Hsin-Chih Chiu , Chih-Chiang Lu , Chun-Yu Lin , Ching-Huai Ni , Yi-Ming Chen , Tzu-Chieh Hsu , Ching-Pei Lin
IPC分类号： H01L33/00 , H01L33/38 , H01L33/62 , H01L33/46
CPC分类号： H01L33/0025 , H01L21/00 , H01L25/0753 , H01L33/0062 , H01L33/0079 , H01L33/0095 , H01L33/22 , H01L33/382 , H01L33/387 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor light-emitting device, comprises the steps of providing a first substrate; providing multiple epitaxial units on the first substrate, wherein the plurality of epitaxial units comprises: multiple first epitaxial units, wherein each of the first epitaxial units has a first geometric shape and a first area; and multiple second epitaxial units, wherein each of the second epitaxial units has a second geometric shape and a second area; providing a second substrate with a surface; transferring the multiple second epitaxial units to the surface of the second substrate; and dividing the first substrate to form multiple first semiconductor light-emitting devices, wherein each of the first semiconductor light-emitting devices has the first epitaxial unit; wherein the first geometric shape is different from the second geometric shape, or the first area is different from the second area.
摘要翻译：一种制造半导体发光器件的方法，包括以下步骤：提供第一衬底; 在所述第一衬底上提供多个外延单元，其中所述多个外延单元包括：多个第一外延单元，其中所述第一外延单元中的每一个具有第一几何形状和第一区域; 和多个第二外延单元，其中每个第二外延单元具有第二几何形状和第二区域; 提供具有表面的第二基底; 将所述多个第二外延单元转移到所述第二基板的表面; 并且分割所述第一基板以形成多个第一半导体发光器件，其中所述第一半导体发光器件中的每一个具有所述第一外延单元; 其中所述第一几何形状与所述第二几何形状不同，或者所述第一区域不同于所述第二区域。

7. 发明申请

US20160005941A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20160005941A1
公开(公告)日：2016-01-07
申请号：US14853511
申请日：2015-09-14
申请人： Epistar Corporation
发明人： Min-Yen Tsai , Chao-Hsing Chen , Tsung-Hsun Chiang , Wen-Hung Chuang , Bo-Jiun Hu , Tzu-Yao Tseng , Jia-Kuen Wang , Kuan-Yi Lee , Yi-Ming Chen , Chun-Yu Lin , Tsung-Hsien Yang , Tzu-Chieh Hsu , Kun-De Lin , Yao-Ning Chan , Chih-Chiang Lu
IPC分类号： H01L33/62 , H01L33/60
CPC分类号： H01L33/382 , H01L33/0012 , H01L33/22 , H01L33/387 , H01L33/46 , H01L33/62 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A semiconductor light-emitting device includes a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a periphery surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; and a patterned metal layer formed on the plurality of vias and covered the periphery surface of the first semiconductor layer.
摘要翻译：半导体发光器件包括半导体堆叠，其包括第一半导体层，第二半导体层和在第一半导体层和第二半导体层之间的有源层，其中第一半导体层包括围绕有源层的外围表面; 穿过所述半导体堆叠以暴露所述第一半导体层的多个通孔; 以及形成在所述多个通路上并且覆盖所述第一半导体层的外围表面的图案化金属层。

8. 发明授权

US08941144B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08941144B2
公开(公告)日：2015-01-27
申请号：US13901191
申请日：2013-05-23
申请人： Epistar Corporation
发明人： Yi-Ming Chen , Tzu-Chieh Hsu , Jhih-Sian Wang , Chien-Fu Huang , Shih-I Chen
IPC分类号： H01L33/22 , H01L33/40 , H01L33/38 , H01L33/42 , H01L33/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/38 , H01L33/405 , H01L33/42
摘要： This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; and a first light-emitting unit comprising a plurality of light-emitting diodes electrically connected to each other on the substrate. A first light-emitting diode in the first light-emitting unit comprises a first semiconductor layer with a first conductivity-type, a second semiconductor layer with a second conductivity-type, and a light-emitting stack formed between the first and second semiconductor layers. The first light-emitting diode in the first light-emitting unit further comprises a first connecting layer on the first semiconductor layer for electrically connecting to a second light-emitting diode in the first light-emitting unit; a second connecting layer, separated from the first connecting layer, formed on the first semiconductor layer; and a third connecting layer on the second semiconductor layer for electrically connecting to a third light-emitting diode in the first light-emitting unit.
摘要翻译：本公开公开了一种发光装置。发光装置包括：基板; 以及包括在所述基板上彼此电连接的多个发光二极管的第一发光单元。第一发光单元中的第一发光二极管包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层和形成在第一和第二半导体层之间的发光叠层。第一发光单元中的第一发光二极管还包括在第一半导体层上的第一连接层，用于电连接到第一发光单元中的第二发光二极管; 与所述第一连接层分离的形成在所述第一半导体层上的第二连接层; 以及在第二半导体层上的第三连接层，用于电连接到第一发光单元中的第三发光二极管。

9. 发明申请

US20140162386A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20140162386A1
公开(公告)日：2014-06-12
申请号：US13707168
申请日：2012-12-06
申请人： EPISTAR CORPORATION
发明人： Chien-Fu HUANG , Yi-Ming Chen , Yi-Tang Lai , Chia-Liang Hsu , Tsung-Hsien Yang , Tzu-Chieh Hsu
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/007 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing semiconductor light-emitting devices comprising the steps of: providing a multi-layer semiconductor film comprising a surface; roughening the surface of the multi-layer semiconductor film to form a scattering surface; re-growing a semiconductor layer on the scattering surface; and roughening the semiconductor layer to form a sub-scattering portion on the scattering surface; wherein the sub-scattering portion is structurally smaller than the scattering surface.
摘要翻译：一种制造半导体发光器件的方法，包括以下步骤：提供包括表面的多层半导体膜; 使多层半导体膜的表面粗糙化，形成散射面; 在散射表面上重新生长半导体层; 并使所述半导体层变粗糙以在所述散射面上形成副散射部; 其中所述副散射部分在结构上小于所述散射表面。

10. 发明申请

US20220131029A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME 有权
公开(公告)号：US20220131029A1
公开(公告)日：2022-04-28
申请号：US17570206
申请日：2022-01-06
申请人： EPISTAR CORPORATION
发明人： Hsin-Chih Chiu , Chih-Chiang Lu , Chun-Yu Lin , Ching-Huai Ni , Yi-Ming Chen , Tzu-Chieh Hsu , Ching-Pei Lin
IPC分类号： H01L33/00 , H01L33/46 , H01L33/38 , H01L33/62 , H01L33/22 , H01L25/075 , H01L21/00
摘要： A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

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