专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09768351B2 Optoelectronic semiconductor device with barrier layer 有权
公开(公告)号：US09768351B2
公开(公告)日：2017-09-19
申请号：US14475210
申请日：2014-09-02
申请人： EPISTAR CORPORATION
发明人： Tsung-Hsien Liu , Rong-Ren Lee , Shih-Chang Lee
IPC分类号： H01L33/30 , H01L33/08 , H01L33/06 , H01L33/02 , H01L33/04
CPC分类号： H01L33/08 , H01L33/025 , H01L33/04 , H01L33/06 , H01L33/305
摘要： An optoelectronic semiconductor device comprises a barrier layer, a first semiconductor layer on the barrier layer, the first semiconductor layer comprising a first dopant and a second dopant, and a second semiconductor layer beneath the barrier layer, the second semiconductor comprising the second dopant, wherein, in the first semiconductor layer, a concentration of the first dopant is larger than a concentration of the second dopant, and the concentration of the second dopant in the second semiconductor layer is larger than that in the first semiconductor layer.

2. 发明授权

US09276173B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US09276173B2
公开(公告)日：2016-03-01
申请号：US14474633
申请日：2014-09-02
申请人： Epistar Corporation
发明人： Chien-Fu Shen , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
IPC分类号： H01L33/38 , H01L23/00 , H01L33/20 , H01L33/62
CPC分类号： H01L33/38 , H01L24/02 , H01L33/20 , H01L33/62 , H01L2224/04042 , H01L2224/48463 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： A light-emitting device comprises: a light-emitting stack having an upper side, a first edge having an end point, and a second edge opposite to the first edge; a first bonding region arranged on the upper side, near the first edge, and far from the end point; a second bonding region separated from to the first bonding region by a first distance and being far from the end point; a third bonding region arranged on the upper side; a fourth bonding region separated from the third bonding region by a second distance longer than the first distance; a first electrode connected to the first bonding region; a second electrode connected to the second bonding region; a third electrode connected to the third bonding region; a fourth electrode connected to the fourth bonding region; and a fifth electrode connected to the first bonding region and pointing to the fourth bonding region.
摘要翻译：发光装置包括：具有上侧的发光叠层，具有端点的第一边缘和与第一边缘相对的第二边缘; 第一接合区域，其布置在上侧，靠近第一边缘并且远离端点; 第二接合区域，与第一接合区域分离第一距离并且远离端点; 布置在上侧的第三接合区域; 第四接合区域，与所述第三接合区域隔开比所述第一距离长的第二距离; 连接到所述第一接合区域的第一电极; 连接到所述第二接合区域的第二电极; 连接到所述第三接合区域的第三电极; 连接到第四接合区域的第四电极; 以及连接到第一接合区域并指向第四接合区域的第五电极。

3. 发明申请

US20140367733A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20140367733A1
公开(公告)日：2014-12-18
申请号：US14474633
申请日：2014-09-02
申请人： Epistar Corporation
发明人： Chien-Fu SHEN , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
IPC分类号： H01L33/38 , H01L23/00
CPC分类号： H01L33/38 , H01L24/02 , H01L33/20 , H01L33/62 , H01L2224/04042 , H01L2224/48463 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： A light-emitting device comprises: a light-emitting stack having an upper side, a first edge having an end point, and a second edge opposite to the first edge; a first bonding region arranged on the upper side, near the first edge, and far from the end point; a second bonding region separated from to the first bonding region by a first distance and being far from the end point; a third bonding region arranged on the upper side; a fourth bonding region separated from the third bonding region by a second distance longer than the first distance; a first electrode connected to the first bonding region; a second electrode connected to the second bonding region; a third electrode connected to the third bonding region; a fourth electrode connected to the fourth bonding region; and a fifth electrode connected to the first bonding region and pointing to the fourth bonding region.
摘要翻译：发光装置包括：具有上侧的发光叠层，具有端点的第一边缘和与第一边缘相对的第二边缘; 第一接合区域，其布置在上侧，靠近第一边缘并且远离端点; 第二接合区域，与第一接合区域分离第一距离并且远离端点; 布置在上侧的第三接合区域; 第四接合区域，与所述第三接合区域隔开比所述第一距离长的第二距离; 连接到所述第一接合区域的第一电极; 连接到所述第二接合区域的第二电极; 连接到所述第三接合区域的第三电极; 连接到第四接合区域的第四电极; 以及连接到第一接合区域并指向第四接合区域的第五电极。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式