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1. 发明申请

US20140264326A1 FIELD EFFECT TRANSISTOR 有权
标题翻译：场效应晶体管
公开(公告)号：US20140264326A1
公开(公告)日：2014-09-18
申请号：US14209024
申请日：2014-03-13
申请人： Huga Optotech Inc. , Epistar Corporation
发明人： Heng-Kuang Lin , Chien-Kai Tung
IPC分类号： H01L29/778
CPC分类号： H01L29/7785 , H01L29/2003 , H01L29/205 , H01L29/22 , H01L29/267 , H01L29/7783 , H01L29/7787
摘要： A FET disclosed herein comprises a substrate, a first semiconductor layer disposed over the substrate, a second semiconductor layer disposed over the first semiconductor layer, wherein an interface between the first semiconductor layer and the second semiconductor layer has a two-dimensional electron gas. The E-mode FET further comprises a p+ III-V semiconductor layer disposed over the second semiconductor layer and a depolarization layer disposed between the second semiconductor layer and the p+ III-V semiconductor layer.
摘要翻译：本文公开的FET包括衬底，设置在衬底上的第一半导体层，设置在第一半导体层上的第二半导体层，其中第一半导体层和第二半导体层之间的界面具有二维电子气。 E型FET还包括设置在第二半导体层上的p + III-V半导体层和设置在第二半导体层和p + III-V半导体层之间的去极化层。

2. 发明授权

US09647102B2 Field effect transistor 有权
公开(公告)号：US09647102B2
公开(公告)日：2017-05-09
申请号：US15065006
申请日：2016-03-09
申请人： EPISTAR CORPORATION , HUGA OPTOTECH INC.
发明人： Heng-Kuang Lin , Chien-Kai Tung
IPC分类号： H01L29/778 , H01L29/20 , H01L29/205 , H01L29/22 , H01L29/267
CPC分类号： H01L29/7785 , H01L29/2003 , H01L29/205 , H01L29/22 , H01L29/267 , H01L29/7783 , H01L29/7787
摘要： A field effect transistor includes a substrate; a first semiconductor layer, disposed over the substrate; a second semiconductor layer, disposed over the first semiconductor layer, wherein an interface between the first semiconductor layer and the second semiconductor layer has a two-dimensional electron gas; a p+ III-V semiconductor layer, disposed over the second semiconductor layer; and a depolarization layer, disposed between the second semiconductor layer and the p+ III-V semiconductor layer, wherein the depolarization layer includes a metal oxide layer.

3. 发明授权

US09711683B2 Semiconductor device and the method of manufacturing the same 有权
公开(公告)号：US09711683B2
公开(公告)日：2017-07-18
申请号：US14498104
申请日：2014-09-26
申请人： Epistar Corporation , HUGA OPTOTECH INC.
发明人： Heng-Kuang Lin , Ya-Yu Yang
IPC分类号： H01L33/12 , H01L21/02 , H01L29/20 , H01L33/32 , H01L21/265 , H01L29/812
CPC分类号： H01L33/12 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/26506 , H01L29/2003 , H01L29/812 , H01L33/32
摘要： The present application discloses a semiconductor device comprising a crystalline substrate having a first region and a second region, a nuclei structure on the first region, a first crystalline buffer layer on the nuclei structure, a void between the second region and the first crystalline buffer layer, a second crystalline buffer layer on the first crystalline buffer layer, an intermediate layer located between the first crystalline buffer layer and the second crystalline buffer layer, and a semiconductor device layer on the second crystalline buffer layer.

4. 发明授权

US09299824B2 Field effect transistor 有权
标题翻译：场效应晶体管
公开(公告)号：US09299824B2
公开(公告)日：2016-03-29
申请号：US14209024
申请日：2014-03-13
申请人： EPISTAR CORPORATION , HUGA OPTOTECH INC.
发明人： Heng-Kuang Lin , Chien-Kai Tung
IPC分类号： H01L31/072 , H01L29/778 , H01L29/20
CPC分类号： H01L29/7785 , H01L29/2003 , H01L29/205 , H01L29/22 , H01L29/267 , H01L29/7783 , H01L29/7787
摘要： A FET disclosed herein comprises a substrate, a first semiconductor layer disposed over the substrate, a second semiconductor layer disposed over the first semiconductor layer, wherein an interface between the first semiconductor layer and the second semiconductor layer has a two-dimensional electron gas. The E-mode FET further comprises a p+ III-V semiconductor layer disposed over the second semiconductor layer and a depolarization layer disposed between the second semiconductor layer and the p+ III-V semiconductor layer.
摘要翻译：本文公开的FET包括衬底，设置在衬底上的第一半导体层，设置在第一半导体层上的第二半导体层，其中第一半导体层和第二半导体层之间的界面具有二维电子气。 E型FET还包括设置在第二半导体层上的p + III-V半导体层和设置在第二半导体层和p + III-V半导体层之间的去极化层。

5. 发明授权

US09627523B2 High electron mobility transistor 有权
公开(公告)号：US09627523B2
公开(公告)日：2017-04-18
申请号：US15133207
申请日：2016-04-19
申请人： EPISTAR CORPORATION , HUGA OPTOTECH Inc.
发明人： Hsein-chin Chiu , Chien-Kai Tung , Heng-Kuang Lin , Chih-Wei Yang , Hsiang-Chun Wang
IPC分类号： H01L29/66 , H01L29/778 , H01L29/417 , H01L29/423 , H01L29/20 , H01L29/15 , H01L29/205
CPC分类号： H01L29/7784 , H01L29/157 , H01L29/2003 , H01L29/205 , H01L29/41758 , H01L29/42316 , H01L29/7787
摘要： A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region. The matrix electrode comprises a plurality of first electrodes arranged on the epitaxial stack, a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes, a plurality of third electrodes arranged adjacent to the plurality of first electrodes and second electrodes. One of the plurality of first electrodes comprises a first side, a second side, a third side and a fourth side. The first side and the third side are opposite sides, and the second side and the fourth side are opposite sides. Two of the plurality of second electrodes are arranged on the first side and the third side, and two of the plurality of third electrodes are arranged on the second side and the fourth side.

6. 发明申请

US20160190295A1 FIELD EFFECT TRANSISTOR 有权
标题翻译：场效应晶体管
公开(公告)号：US20160190295A1
公开(公告)日：2016-06-30
申请号：US15065006
申请日：2016-03-09
申请人： EPISTAR CORPORATION , HUGA OPTOTECH INC.
发明人： Heng-Kuang Lin , Chien-Kai Tung
IPC分类号： H01L29/778 , H01L29/267 , H01L29/22 , H01L29/20 , H01L29/205
CPC分类号： H01L29/7785 , H01L29/2003 , H01L29/205 , H01L29/22 , H01L29/267 , H01L29/7783 , H01L29/7787
摘要： A field effect transistor includes a substrate; a first semiconductor layer, disposed over the substrate; a second semiconductor layer, disposed over the first semiconductor layer, wherein an interface between the first semiconductor layer and the second semiconductor layer has a two-dimensional electron gas; a p+ III-V semiconductor layer, disposed over the second semiconductor layer; and a depolarization layer, disposed between the second semiconductor layer and the p+ III-V semiconductor layer, wherein the depolarization layer includes a metal oxide layer.
摘要翻译：场效应晶体管包括衬底; 设置在所述基板上的第一半导体层; 第二半导体层，设置在所述第一半导体层上，其中所述第一半导体层和所述第二半导体层之间的界面具有二维电子气; 设置在所述第二半导体层上的p + III-V半导体层; 和去极化层，设置在第二半导体层和p + III-V半导体层之间，其中去极化层包括金属氧化物层。

7. 发明授权

US09356128B2 Semiconductor power device 有权
标题翻译：半导体功率器件
公开(公告)号：US09356128B2
公开(公告)日：2016-05-31
申请号：US14256733
申请日：2014-04-18
申请人： EPISTAR CORPORATION , HUGA OPTOTECH INC.
发明人： Heng-Kuang Lin , Yih-Ting Kuo , Tsung-Cheng Chang
IPC分类号： H01L29/778 , H01L29/20 , H01L29/207 , H01L21/02 , H01L21/20 , H01L29/66 , H01L29/10
CPC分类号： H01L29/778 , H01L29/1075 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： A semiconductor power device, comprising: a substrate; a first semiconductor layer with a first lattice constant formed on the substrate; a first grading layer formed on the first semiconductor layer and comprising a first portion; a second grading layer formed on the first grading layer; a second semiconductor layer with a second lattice constant formed on the second grading layer; a first interlayer formed in the first grading layer and adjacent to the first portion of the first grading layer; and a second interlayer formed in the second grading layer; wherein the first interlayer comprises a first superlattice including a series of Alx1Ga1-x1N/Aly1Ga1-y1N alternate layers, (x1-y1)≧0.2, and the second interlayer comprises a second superlattice including a series of Alx2Ga1-x2N/Aly2Ga1-y2N alternate layers, (x2-y2)≧0.2, wherein the average of x1 and y1 is larger than that of x2 and y2.
摘要翻译：一种半导体功率器件，包括：衬底; 在基板上形成具有第一晶格常数的第一半导体层; 形成在所述第一半导体层上并包括第一部分的第一分级层; 形成在第一分级层上的第二分级层; 形成在所述第二分级层上的具有第二晶格常数的第二半导体层; 形成在第一分级层中并与第一分级层的第一部分相邻的第一中间层; 以及形成在所述第二分级层中的第二夹层; 其中所述第一夹层包括包括一系列Al x Ga 1-x N / Al y Ga 1-y 1 N交替层（x1-y1）≥0.2的第一超晶格，并且所述第二中间层包括第二超晶格，所述第二超晶格包括一系列Alx2Ga1-x2N / Aly2Ga1-y2N交替（x2-y2）≥0.2，其中x1和y1的平均值大于x2和y2的平均值。

8. 发明授权

US09331154B2 High electron mobility transistor 有权
标题翻译：高电子迁移率晶体管
公开(公告)号：US09331154B2
公开(公告)日：2016-05-03
申请号：US14328241
申请日：2014-07-10
申请人： EPISTAR CORPORATION , HUGA OPTOTECH, INC
发明人： Hsien-Chin Chiu , Chien-Kai Tung , Heng-Kuang Lin , Chih-Wei Yang , Hsiang-Chun Wang
IPC分类号： H01L29/66 , H01L29/20 , H01L29/417 , H01L29/423 , H01L29/778
CPC分类号： H01L29/7784 , H01L29/157 , H01L29/2003 , H01L29/205 , H01L29/41758 , H01L29/42316 , H01L29/7787
摘要： A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region, and a plurality of first bridges electrically connecting the plurality of second electrodes. The matrix electrode structure comprises a plurality of first electrodes arranged on the epitaxial stack and a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes. One of the bridges is arranged between two of the second electrodes and crossed over one of the first electrodes.
摘要翻译：高电子迁移率晶体管包括衬底，布置在衬底上方的外延层，并且具有第一区域和围绕第一区域的第二区域，布置在第一区域中的矩阵电极结构以及电连接多个第一区域的多个第一桥的第二电极。矩阵电极结构包括布置在外延堆叠上的多个第一电极和布置在外延堆叠上并与多个第一电极相邻的多个第二电极。其中一个桥被布置在两个第二电极之间并跨过第一电极中的一个。

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