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1. 发明授权

US07807996B2 Test pattern of CMOS image sensor and method of measuring process management using the same 失效
标题翻译： CMOS图像传感器的测试图案和使用其的测量过程管理方法
公开(公告)号：US07807996B2
公开(公告)日：2010-10-05
申请号：US11545462
申请日：2006-10-11
申请人： Eun Sang Cho , Kee Ho Kim
发明人： Eun Sang Cho , Kee Ho Kim
IPC分类号： H01L23/58
CPC分类号： H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： The test pattern according to the present invention consists of an opaque metal film pattern formed on a semiconductor substrate, an insulating film formed on the semiconductor substrate and the metal film pattern, a red color filter formed on the insulating film, a planarization layer formed on the insulating film and the red color filter, and a number of micro-lenses formed on the planarization layer.
摘要翻译：根据本发明的测试图案包括形成在半导体衬底上的不透明金属膜图案，形成在半导体衬底上的绝缘膜和金属膜图案，形成在绝缘膜上的红色滤色器，形成在绝缘膜上的平坦化层绝缘膜和红色滤色器以及形成在平坦化层上的多个微透镜。

2. 发明授权

US08076729B2 Semiconductor device having a dual gate electrode and methods of making the same 有权
标题翻译：具有双栅电极的半导体器件及其制造方法
公开(公告)号：US08076729B2
公开(公告)日：2011-12-13
申请号：US12122531
申请日：2008-05-16
申请人： Eun Sang Cho
发明人： Eun Sang Cho
IPC分类号： H01L29/66
CPC分类号： H01L21/82345 , H01L21/823842
摘要： Disclosed is a method for forming a dual gate electrode of a semiconductor device, which may improve manufacturing productivity by simplifying a process of forming gate electrodes in PMOS and NMOS regions, respectively, and may provide improvement in performance by making the two gate electrodes have a different thickness and material state in a manner that one of the two gate electrodes has a single-layer structure and the other one has a two-layer structure.
摘要翻译：公开了一种用于形成半导体器件的双栅电极的方法，其可以通过简化在PMOS和NMOS区域中形成栅电极的工艺来提高制造生产率，并且可以通过使两个栅电极具有不同的厚度和材料状态，使得两个栅电极之一具有单层结构，另一个具有双层结构。

3. 发明授权

US07642118B2 Image sensor fabricating method 失效
标题翻译：图像传感器制造方法
公开(公告)号：US07642118B2
公开(公告)日：2010-01-05
申请号：US12002097
申请日：2007-12-14
申请人： Eun Sang Cho
发明人： Eun Sang Cho
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L27/14627
摘要： A method of fabricating an image sensor includes forming a first SiO2 layer on a color filter layer, patterning a photosensitive layer on first SiO2 layer, patterning the first SiO2 layer through a first etching process, forming a second SiO2 layer on the first SiO2 layer, and forming a micro-lens by etching the second SiO2 layer.
摘要翻译：制作图像传感器的方法包括在滤色器层上形成第一SiO 2层，在第一SiO 2层上形成感光层，通过第一蚀刻工艺对第一SiO 2层进行构图，在第一SiO 2层上形成第二SiO 2层，以及通过蚀刻第二SiO 2层形成微透镜。

4. 发明申请

US20090248526A1 METHOD AND PORTABLE APPARATUS FOR SETTLING TRANSACTION 审中-公开
标题翻译：用于结算交易的方法和便携式设备
公开(公告)号：US20090248526A1
公开(公告)日：2009-10-01
申请号：US12412365
申请日：2009-03-27
申请人： Kyung Yang PARK , Chul Ki Kim , Que Min Hwang , Bong Sung Jung , Kwang Hyun Sung , Do Ha Kim , Hoon Joon Jung , Bog Heui Kang , Eun Sang Cho , Won Dong Kim , Dae Yeon Kim , Kwang Su Chang , Hee Gu Woo
发明人： Kyung Yang PARK , Chul Ki Kim , Que Min Hwang , Bong Sung Jung , Kwang Hyun Sung , Do Ha Kim , Hoon Joon Jung , Bog Heui Kang , Eun Sang Cho , Won Dong Kim , Dae Yeon Kim , Kwang Su Chang , Hee Gu Woo
IPC分类号： G06Q20/00 , G06Q40/00 , H04M1/66
CPC分类号： G06Q20/322 , G06Q20/10 , G06Q20/102 , G06Q20/20 , G06Q20/32 , G06Q20/325 , G06Q20/327 , G06Q20/341 , G06Q20/342 , G06Q20/351 , G06Q20/355 , G06Q20/363 , G06Q20/367 , G06Q20/3672 , G06Q20/382 , G06Q20/40 , G06Q20/4014 , G06Q30/0213 , G06Q30/0222 , G06Q40/00 , G07F7/025 , G07F7/0866 , G07F7/1008
摘要： A method and portable apparatus for settling a transaction are provided, in which the portable apparatus may be used as a card substitute payment device for settling a transaction. Information to conduct a settlement may be stored in the portable apparatus. The portable apparatus may be, for example, a portable phone or a PDA. A transaction inquiry machine may read or receive the information from the portable apparatus, similar to that of a card reader reading a magnetic card, and transmit the information to a VAN company server or a card company server, to then request for an approval to settle the transaction.
摘要翻译：提供了一种用于结算交易的方法和便携式设备，其中便携式设备可以用作用于结算交易的卡替代支付设备。进行结算的信息可以存储在便携式设备中。便携式装置可以是例如便携式电话或PDA。交易查询机器可以从便携式设备读取或接收读取磁卡的读卡器的信息，并将该信息发送到VAN公司服务器或卡公司服务器，然后请求批准结算交易。

5. 发明授权

US07552094B2 Optical payment transceiver and system using the same 有权
公开(公告)号：US07552094B2
公开(公告)日：2009-06-23
申请号：US10148326
申请日：2001-03-16
申请人： Kyung Yang Park , Chul Ki Kim , Que Min Hwang , Bong Sung Jung , Kwang Hyun Sung , Do Ha Kim , Hoon Joon Jung , Bog Heui Kang , Eun Sang Cho , Won Dong Kim , Dae Yeon Kim , Kwang Su Chang , Hee Gu Woo
发明人： Kyung Yang Park , Chul Ki Kim , Que Min Hwang , Bong Sung Jung , Kwang Hyun Sung , Do Ha Kim , Hoon Joon Jung , Bog Heui Kang , Eun Sang Cho , Won Dong Kim , Dae Yeon Kim , Kwang Su Chang , Hee Gu Woo
IPC分类号： G06Q20/00 , G06Q30/00
CPC分类号： G06Q20/322 , G06Q20/10 , G06Q20/102 , G06Q20/20 , G06Q20/32 , G06Q20/325 , G06Q20/327 , G06Q20/341 , G06Q20/342 , G06Q20/351 , G06Q20/355 , G06Q20/363 , G06Q20/367 , G06Q20/3672 , G06Q20/382 , G06Q20/40 , G06Q20/4014 , G06Q30/0213 , G06Q30/0222 , G06Q40/00 , G07F7/025 , G07F7/0866 , G07F7/1008
摘要： An optical payment transceiver and an optical settlement system using the same uses a personal portable terminal incorporated with an optical transceiver as a card substitute payment unit for settlement. Here, card information is incorporated in a personal portable terminal incorporated with an optical transceiver such as a portable phone or a PDA and the optical transceiver is connected to a card inquiry machine to thereby optically transmit and receive card information. The card inquiry machine recognizes the received card information in the same manner as that of the card reader reading a magnetic card, and transmits the card information to a VAN company server or a card company server, to then request for an approval and settle transactions. The present invention is applied to most fields where financial transactions are performed as in a general commerce, a toll gate fee or tunnel passage fee collection system, a subway or bus fare levying system, a gas station, a department store, a drive-thru ordering system, a vending machine, and a fee payment system of kiosks. Also, the present invention can be applied to an entrance/exit security system requiring personal identification. Thus, the present invention can use a portable terminal as a payment unit without carrying a cash or cards, to thereby provide an effect of performing a safer and more reliable credit transaction.

6. 发明授权

US08008966B2 Start-up circuit for generating bandgap reference voltage 有权
标题翻译：用于产生带隙参考电压的启动电路
公开(公告)号：US08008966B2
公开(公告)日：2011-08-30
申请号：US12262057
申请日：2008-10-30
申请人： Eun Sang Cho
发明人： Eun Sang Cho
IPC分类号： G05F1/10
CPC分类号： G05F3/30
摘要： Disclosed is a start-up circuit that can stably and rapidly start up a bandgap reference voltage generating circuit when the bandgap reference voltage generating circuit is switched from a sleep mode to an operation mode, even if a difference in electrical characteristic, such as DC offset or the like, occurs due to, e.g, a physical difference between input transistors of an operational amplifier.
摘要翻译：公开了一种启动电路，即使带隙参考电压产生电路从睡眠模式切换到操作模式时，也能够稳定且快速地启动带隙参考电压产生电路，即使电特性差如DC偏移由于例如运算放大器的输入晶体管之间的物理差异而发生。

7. 发明授权

US07611978B2 Method for forming gate electrode of semiconductor device 有权
标题翻译：形成半导体器件栅电极的方法
公开(公告)号：US07611978B2
公开(公告)日：2009-11-03
申请号：US12124058
申请日：2008-05-20
申请人： Eun Sang Cho
发明人： Eun Sang Cho
IPC分类号： H01L21/3205
CPC分类号： H01L21/28123 , H01L21/0337 , H01L21/32139 , H01L29/66553 , H01L29/66583
摘要： Provided is a method for forming a gate electrode of a semiconductor device which can form a gate electrode having a fine line width. Disclosed method steps include forming a gate oxide film, a polysilicon film for a gate electrode, and a first sacrificial layer on the entire surface of a semiconductor substrate and then forming an opening within the first sacrificial layer. The effective width of the hole is reduced, and an ion implantation layer is formed on the top surface of the polysilicon film in the region exposed through the hole. A gate electrode is formed under the ion implantation layer by using the ion implantation layer as a mask.
摘要翻译：提供一种形成可形成具有细线宽度的栅电极的半导体器件的栅电极的方法。公开的方法步骤包括在半导体衬底的整个表面上形成栅极氧化膜，用于栅电极的多晶硅膜和第一牺牲层，然后在第一牺牲层内形成开口。孔的有效宽度减小，并且在通过该孔暴露的区域中的多晶硅膜的顶表面上形成离子注入层。通过使用离子注入层作为掩模，在离子注入层的下方形成栅电极。

8. 发明申请

US20080160665A1 Image sensor fabricating method 失效
标题翻译：图像传感器制造方法
公开(公告)号：US20080160665A1
公开(公告)日：2008-07-03
申请号：US12002097
申请日：2007-12-14
申请人： Eun Sang Cho
发明人： Eun Sang Cho
IPC分类号： H01L31/0232
CPC分类号： H01L27/14685 , H01L27/14627
摘要： A method of fabricating an image sensor includes forming a first SiO2 layer on a color filter layer, patterning a photosensitive layer on first SiO2 layer, patterning the first SiO2 layer through a first etching process, forming a second SiO2 layer on the first SiO2 layer, and forming a micro-lens by etching the second SiO2 layer.
摘要翻译：制造图像传感器的方法包括在滤色器层上形成第一SiO 2层，在第一SiO 2层上形成感光层，使第一SiO _{2 层，在第一SiO 2层上形成第二SiO 2层，并通过蚀刻第二SiO 2层形成微透镜 SiO 2层。}

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