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1. 发明授权

US10707410B2 Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferromagnetic structure and methods of manufacturing thereof 有权
公开(公告)号：US10707410B2
公开(公告)日：2020-07-07
申请号：US16225670
申请日：2018-12-19
申请人： Everspin Technologies, Inc.
发明人： Srinivas V. Pietambaram , Bengt J. Akerman , Renu Whig , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
IPC分类号： H01L43/08 , H01L43/10 , H01L43/02 , G11C11/16 , H01L27/22
摘要： A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.

2. 发明授权

US09391264B2 MRAM having an unpinned, fixed synthetic anti-ferromagnetic structure 有权
标题翻译： MRAM具有未固定的，固定的合成反铁磁结构
公开(公告)号：US09391264B2
公开(公告)日：2016-07-12
申请号：US14727910
申请日：2015-06-02
申请人： Everspin Technologies, Inc.
发明人： Srinivas V. Pietambaram , Bengt J. Akerman , Renu Whig , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
IPC分类号： H01L43/02 , H01L43/10 , H01L43/08 , H01L27/22
CPC分类号： H01L43/08 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10
摘要： An MRAM bit includes a free magnetic region, a fixed magnetic region comprising an anti-ferromagnetic material, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, wherein the one or more ferromagnetic materials includes cobalt, (ii) a second layer of one or more ferromagnetic materials wherein the one or more ferromagnetic materials includes cobalt, (iii) a third layer of one or more ferromagnetic materials, and an anti-ferromagnetic coupling layer, wherein: (a) the anti-ferromagnetic coupling layer is disposed between the first and third layers, and (b) the second layer is disposed between the first layer and the anti-ferromagnetic coupling layer.
摘要翻译： MRAM位包括自由磁区，包括反铁磁材料的固定磁区和位于自由磁区与固定磁区之间的电介质层。在一个方面，固定磁区基本上由未固定的固定合成反铁磁（SAF）结构组成，其包括（i）一个或多个铁磁材料的第一层，其中一个或多个铁磁材料包括钴，（ii ）一种或多种铁磁材料的第二层，其中所述一种或多种铁磁材料包括钴，（iii）一种或多种铁磁材料的第三层和反铁磁性耦合层，其中：（a）所述反铁磁性材料耦合层设置在第一和第三层之间，（b）第二层设置在第一层和反铁磁性耦合层之间。

3. 发明授权

US09093637B2 MRAM synthetic anitferomagnet structure 有权
标题翻译： MRAM合成非铁磁结构
公开(公告)号：US09093637B2
公开(公告)日：2015-07-28
申请号：US14303200
申请日：2014-06-12
申请人： Everspin Technologies, Inc.
发明人： Srinivas V. Pietambaram , Bengt J. Akerman , Renu Whig , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
IPC分类号： H01L43/10 , H01L43/08 , H01L43/02 , H01L27/22
CPC分类号： H01L43/08 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10
摘要： An MRAM bit (10) includes a free magnetic region (15), a fixed magnetic region (17) comprising an antiferromagnetic material, and a tunneling barrier (16) comprising a dielectric layer positioned between the free magnetic region (15) and the fixed magnetic region (17). The MRAM bit (10) avoids a pinning layer by comprising a fixed magnetic region exhibiting a well-defined high Hflop using a combination of high Hk (uniaxial anisotropy), high Hsat (saturation field), and ideal soft magnetic properties exhibiting well-defined easy and hard axes.
摘要翻译： MRAM位（10）包括自由磁区（15），包括反铁磁材料的固定磁区（17）和隧道势垒（16），其包括位于自由磁区（15）和固定磁区（17）。 MRAM位（10）通过使用高Hk（单轴各向异性），高Hsat（饱和磁场）和显示明确定义的理想软磁性质的组合，包括表现出明确的高Hflop的固定磁区，避免了钉扎层容易和坚硬的轴。

4. 发明申请

US20150021606A1 MRAM SYNTHETIC ANITFEROMAGNET STRUCTURE 有权
标题翻译： MRAM合成ANITFEROMAGNET结构
公开(公告)号：US20150021606A1
公开(公告)日：2015-01-22
申请号：US14303200
申请日：2014-06-12
申请人： Everspin Technologies, Inc.
发明人： Srinivas V. Pietambaram , Bengt J. Akerman , Renu Whig , Jason Janesky , Nicholas D. Rizzo , Jon Slaughter
IPC分类号： H01L43/10 , H01L43/02
CPC分类号： H01L43/08 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10
摘要： An MRAM bit (10) includes a free magnetic region (15), a fixed magnetic region (17) comprising an antiferromagnetic material, and a tunneling barrier (16) comprising a dielectric layer positioned between the free magnetic region (15) and the fixed magnetic region (17). The MRAM bit (10) avoids a pinning layer by comprising a fixed magnetic region exhibiting a well-defined high Hflop using a combination of high Hk (uniaxial anisotropy), high Hsat (saturation field), and ideal soft magnetic properties exhibiting well-defined easy and hard axes.
摘要翻译： MRAM位（10）包括自由磁区（15），包括反铁磁材料的固定磁区（17）和隧道势垒（16），其包括位于自由磁区（15）和固定磁区（17）。 MRAM位（10）通过使用高Hk（单轴各向异性），高Hsat（饱和磁场）和显示明确定义的理想软磁性质的组合，包括表现出明确的高Hflop的固定磁区，避免了钉扎层容易和坚硬的轴。

5. 发明申请

US20140021471A1 MRAM SYNTHETIC ANITFEROMAGNET STRUCTURE 有权
标题翻译： MRAM合成ANITFEROMAGNET结构
公开(公告)号：US20140021471A1
公开(公告)日：2014-01-23
申请号：US13925590
申请日：2013-06-24
申请人： Everspin Technologies, Inc.
发明人： Srinivas V. Pietambaram , Bengt J. Akerman , Renu W. Dave , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
IPC分类号： H01L43/10
CPC分类号： H01L43/08 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10
摘要： An MRAM bit (10) includes a free magnetic region (15), a fixed magnetic region (17) comprising an antiferromagnetic material, and a tunneling barrier (16) comprising a dielectric layer positioned between the free magnetic region (15) and the fixed magnetic region (17). The MRAM bit (10) avoids a pinning layer by comprising a fixed magnetic region exhibiting a well-defined high Hflop using a combination of high Hk (uniaxial anisotropy), high Hsat (saturation field), and ideal soft magnetic properties exhibiting well-defined easy and hard axes.
摘要翻译： MRAM位（10）包括自由磁区（15），包括反铁磁材料的固定磁区（17）和隧道势垒（16），其包括位于自由磁区（15）和固定磁区（17）。 MRAM位（10）通过使用高Hk（单轴各向异性），高Hsat（饱和磁场）和显示明确定义的理想软磁性质的组合，包括表现出明确的高Hflop的固定磁区，避免了钉扎层容易和坚硬的轴。

6. 发明授权

US10897008B2 Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferromagnetic structure and methods of manufacturing thereof 有权
公开(公告)号：US10897008B2
公开(公告)日：2021-01-19
申请号：US16890215
申请日：2020-06-02
申请人： Everspin Technologies, Inc.
发明人： Srinivas V. Pietambaram , Bengt J. Akerman , Renu Whig , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
IPC分类号： H01L43/08 , H01L43/10 , G11C11/16 , H01L43/02 , H01L27/22
摘要： A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.

7. 发明授权

US10199571B2 Methods of manufacturing magnetoresistive MTJ stacks having an unpinned, fixed synthetic anti-ferromagnetic structure 有权
公开(公告)号：US10199571B2
公开(公告)日：2019-02-05
申请号：US15722191
申请日：2017-10-02
申请人： Everspin Technologies, Inc.
发明人： Srinivas V. Pietambaram , Bengt J. Akerman , Renu Whig , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
IPC分类号： H01L43/08 , H01L43/10 , H01L43/02 , G11C11/16 , H01L27/22
摘要： A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.

8. 发明授权

US09793468B2 Magnetoresistive MTJ stack having an unpinned, fixed synthetic anti-ferromagnetic structure 有权
公开(公告)号：US09793468B2
公开(公告)日：2017-10-17
申请号：US15199862
申请日：2016-06-30
申请人： Everspin Technologies, Inc.
发明人： Srinivas V. Pietambaram , Bengt J. Akerman , Renu Whig , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
IPC分类号： H01L43/08 , H01L43/10 , H01L43/02 , G11C11/16 , H01L27/22
CPC分类号： H01L43/08 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10
摘要： A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.

9. 发明申请

US20160315252A1 Magnetoresistive MTJ Stack having an Unpinned, Fixed Synthetic Anti-Ferromagnetic Structure 审中-公开
标题翻译：具有未固定，固定的合成反铁磁结构的磁阻MTJ堆叠
公开(公告)号：US20160315252A1
公开(公告)日：2016-10-27
申请号：US15199862
申请日：2016-06-30
申请人： Everspin Technologies, Inc.
发明人： Srinivas V. Pietambaram , Bengt J. Akerman , Renu Whig , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
IPC分类号： H01L43/08 , H01L43/10 , G11C11/16 , H01L43/02
CPC分类号： H01L43/08 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10
摘要： A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.
摘要翻译：磁阻磁隧道结（MTJ）堆叠包括位于自由磁区和固定磁区之间的自由磁区，固定磁区和电介质层。在一个方面，固定磁性区域基本上由未固定的固定的合成反铁磁（SAF）结构组成，其包括（i）包括钴的一种或多种铁磁材料的第一层，（ii）多层区域，包括多个铁磁材料层，其中所述多个铁磁材料层包括一个或多个包含钴的铁磁材料的层，以及（iii）设置在所述第一层和所述多层区域之间的反铁磁性耦合层。自由磁区可以包括圆形，第一层的一个或多个铁磁材料可以包括钴，铁和硼，并且电介质层可以设置在第一层上。

10. 发明申请

US20150280110A1 MRAM HAVING AN UNPINNED, FIXED SYNTHETIC ANTI-FERROMAGNETIC STRUCTURE 审中-公开
标题翻译： MRAM具有独特的，固定的合成抗菌结构
公开(公告)号：US20150280110A1
公开(公告)日：2015-10-01
申请号：US14727910
申请日：2015-06-02
申请人： Everspin Technologies, Inc.
发明人： Srinivas V. Pietambaram , Bengt J. Akerman , Renu Whig , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
IPC分类号： H01L43/08 , H01L43/02 , H01L43/10
CPC分类号： H01L43/08 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10
摘要： An MRAM bit includes a free magnetic region, a fixed magnetic region comprising an anti-ferromagnetic material, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, wherein the one or more ferromagnetic materials includes cobalt, (ii) a second layer of one or more ferromagnetic materials wherein the one or more ferromagnetic materials includes cobalt, (iii) a third layer of one or more ferromagnetic materials, and an anti-ferromagnetic coupling layer, wherein: (a) the anti-ferromagnetic coupling layer is disposed between the first and third layers, and (b) the second layer is disposed between the first layer and the anti-ferromagnetic coupling layer.
摘要翻译： MRAM位包括自由磁区，包括反铁磁材料的固定磁区和位于自由磁区与固定磁区之间的电介质层。在一个方面，固定磁区基本上由未固定的固定合成反铁磁（SAF）结构组成，其包括（i）一个或多个铁磁材料的第一层，其中一个或多个铁磁材料包括钴，（ii ）一种或多种铁磁材料的第二层，其中所述一种或多种铁磁材料包括钴，（iii）一种或多种铁磁材料的第三层和反铁磁性耦合层，其中：（a）所述反铁磁性材料耦合层设置在第一和第三层之间，（b）第二层设置在第一层和反铁磁性耦合层之间。

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