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1. 发明授权

US12034021B2 Structure, composition for near-infrared cut filter, dry film, method for producing structure, optical sensor, and image display device 有权
公开(公告)号：US12034021B2
公开(公告)日：2024-07-09
申请号：US16940137
申请日：2020-07-27
申请人： FUJIFILM Corporation
发明人： Tetsushi Miyata , Tokihiko Matsumura
IPC分类号： H01L27/146 , G02B5/20 , G02B5/22 , H04N5/33
CPC分类号： H01L27/14621 , H01L27/14685 , H04N5/33
摘要： A structure has first pixels constituted of a laminate including a light-receiving element, a color filter, and a near-infrared cut filter, and second pixels including a near-infrared transmitting filter. The near-infrared cut filter includes a predetermined near-infrared absorbing colorant, a resin having a glass transition temperature of 100° C. or higher, and a surfactant.

2. 发明授权

US10585221B2 Near-infrared absorption composition, cured film, near-infrared absorption filter, solid-state imaging device, and infrared sensor 有权
公开(公告)号：US10585221B2
公开(公告)日：2020-03-10
申请号：US15684164
申请日：2017-08-23
申请人： FUJIFILM Corporation
发明人： Tokihiko Matsumura , Kazuya Oota , Yoshihiro Jimbo , Daisuke Sasaki
IPC分类号： G02B5/22 , H01L31/0232 , H01L27/144 , H01L27/146 , G02B5/20
摘要： To provide a near-infrared absorption composition capable of forming a film having excellent visible transparency and near-infrared shieldability, a cured film, a near-infrared absorption filter, a solid-state imaging device, and an infrared sensor. A near-infrared absorption composition includes a compound represented Formula (1) and a resin, the compound has a maximum absorption wavelength in a wavelength range of 750 to 830 nm in a film in a case where the film is formed using the near-infrared absorption composition, and a value obtained by dividing an absorbance at a wavelength of 555 nm by an absorbance at the maximum absorption wavelength is 0.10 or less.

3. 发明授权

US10014474B2 Composition for forming gate insulating film, organic thin film transistor, electronic paper, and display device 有权
公开(公告)号：US10014474B2
公开(公告)日：2018-07-03
申请号：US14955698
申请日：2015-12-01
申请人： FUJIFILM Corporation
发明人： Yasuaki Matsushita , Tokihiko Matsumura
IPC分类号： H01L51/00 , C07F9/145 , C08L33/14 , H01L51/05
CPC分类号： H01L51/004 , C07F9/145 , C08F220/10 , C08L33/14 , H01L51/0034 , H01L51/052 , H01L51/0545
摘要： The present invention provides a composition for forming a gate insulating film, which improves the insulation reliability of an organic thin film transistor without greatly reducing the mobility of the organic thin film transistor, an organic thin film transistor, electronic paper, and a display device. The composition for forming a gate insulating film of the present invention contains an insulating material and a migration inhibitor selected from the group consisting of a compound represented by any of Formulae (1) to (8), a polymer compound (X) containing a repeating unit represented by Formula (A), and a polymer compound (Y) containing a repeating unit represented by Formula (B) and a repeating unit represented by Formula (C).

4. 发明授权

US09633755B2 Conductive composition, conductive member, conductive member production method, touch panel, and solar cell 有权
公开(公告)号：US09633755B2
公开(公告)日：2017-04-25
申请号：US14492881
申请日：2014-09-22
申请人： FUJIFILM Corporation
发明人： Tokihiko Matsumura , Toyohisa Oya , Kazushi Furukawa
IPC分类号： H01B1/22 , C09D7/12 , H01L31/0224 , H01L31/18 , C09D5/24 , C23F1/02 , H01B13/00 , C08J7/04 , C08K5/32 , C08K5/3435 , C08K7/06 , C08K5/1535 , C08K5/3445 , C08K5/51 , C08J7/12
CPC分类号： H01B1/22 , C08J7/042 , C08J7/123 , C08J2367/02 , C08J2400/14 , C08J2429/04 , C08J2483/04 , C08K5/1535 , C08K5/32 , C08K5/3435 , C08K5/3445 , C08K5/51 , C08K7/06 , C08K2201/001 , C09D5/24 , C09D7/61 , C09D7/70 , C23F1/02 , H01B13/0026 , H01B13/0036 , H01L31/022466 , H01L31/1884 , Y02E10/50 , Y02P70/521 , Y10T428/24909 , Y10T428/25 , C08F2220/185 , C08F220/06
摘要： The conductive composition contains at least (a) conductive metal fibers, and (b) at least one compound selected from a compound represented by the following Formula (1), a compound represented by the following Formula (2), and a compound having a partial structure represented by the following Formula (3). Each of R1 and R2 independently represents a hydrogen atom, an alkyl group, an alkenyl group, an aryl group, an acyl group, an aryloxycarbonyl group, an alkoxycarbonyl group, or a carbamoyl group. Each of R3, R4, R5, R6, R8, R9, R10, and R11 independently represents an alkyl group having 1 to 4 carbon atoms, and R7 represents a hydrogen atom or a substituent. R12 represents an alkyl group, an alkoxy group, an acyl group, or a hydrogen atom. * represents a bond.

5. 发明授权

US11118059B2 Film, film forming method, optical filter, laminate, solid image pickup element, image display device, and infrared sensor 有权
公开(公告)号：US11118059B2
公开(公告)日：2021-09-14
申请号：US16052051
申请日：2018-08-01
申请人： FUJIFILM Corporation
发明人： Kazuya Oota , Kyohei Arayama , Daisuke Sasaki , Tokihiko Matsumura , Shunsuke Kitajima
IPC分类号： G02B5/22 , C09B11/28 , G03F7/038 , C09B57/00 , G02B5/20 , G02B3/00 , G03F7/00 , C09B11/24 , C09B11/12 , C09B23/01 , G03F7/105 , C09B23/00 , C09B57/10 , G03F7/38 , G02B1/11 , C09D11/328
摘要： Provided are a film having excellent heat resistance and a film forming method. In addition, provided are an optical filter, a laminate, a solid image pickup element, an image display device, and an infrared sensor. The film includes an aggregate of a dye and a resin, in which an average particle size of the aggregate of the dye is 30 to 450 nm.

6. 发明授权

US10138385B2 Conductive film forming composition, conductive film, organic thin film transistor, electronic paper, display device, and wiring board 有权
公开(公告)号：US10138385B2
公开(公告)日：2018-11-27
申请号：US15450246
申请日：2017-03-06
申请人： FUJIFILM CORPORATION
发明人： Tokihiko Matsumura , Yasuaki Matsushita
IPC分类号： C09D11/03 , C09D11/037 , C09D11/52 , H01B1/22 , H01L27/28 , H01L51/00 , H01L51/10 , H05K1/09 , C09D7/40 , C08K5/13 , C09D1/00 , C09D5/24 , H01L21/28 , H01L21/288 , H01L29/786 , C09D11/30 , C09D7/63 , C08K3/28 , H01L51/05
摘要： The present invention provides a conductive film forming composition which makes it possible to prepare an organic thin film transistor having excellent insulation reliability while inhibiting the deterioration of mobility and has excellent coating properties and provides a conductive film and an organic thin film transistor which are prepared using the composition. The present invention also provides electronic paper and a display device which contain the organic thin film transistor and wiring board which has wiring formed using the conductive film forming composition. The conductive film forming composition according to the present invention contains water, conductive particles, and a migration inhibitor containing a compound having a group represented by Formula (1). In Formula (1), W1 represents any one of a hydrogen atom, Formula (A), Formula (B), and Formula (C). In Formula (1), R1, R2, R3, and R4 each independently represent any one of a hydrogen atom, a substituent, and W2. W2 represents Formula (D), Formula (E), or Formula (F). Here, in a case where W1 is a hydrogen atom, at least one of R1, R2, R3, or R4 is W2. In Formula (1), * represents a binding position.

7. 发明授权

US10008301B2 Organic semiconductor composition, organic thin-film transistor, electronic paper, and display device 有权
公开(公告)号：US10008301B2
公开(公告)日：2018-06-26
申请号：US14943568
申请日：2015-11-17
申请人： FUJIFILM Corporation
发明人： Yasuaki Matsushita , Tokihiko Matsumura
IPC分类号： H01B1/12 , H01L51/10 , C08F12/22 , C08F220/22 , H01L51/05 , C08F120/30 , C08F20/30 , C08F212/14 , C08F220/30 , H01L51/00 , C08F120/22
CPC分类号： H01B1/12 , C08F12/22 , C08F20/30 , C08F120/22 , C08F120/30 , C08F212/14 , C08F220/22 , C08F2220/303 , H01L51/004 , H01L51/0545 , H01L51/0566 , H01L51/105
摘要： The present invention provides an organic semiconductor composition, which improves the insulation reliability of an organic thin-film transistor without greatly reducing the mobility of the organic thin-film transistor, an organic thin-film transistor which is formed by using the organic semiconductor composition, and electronic paper and a display device which use the organic thin-film transistor. The organic semiconductor composition of the present invention contains an organic semiconductor material and an F-containing migration inhibitor selected from the group consisting of a compound represented by any of Formulae (1) to (8), a polymer compound (X) containing a repeating unit represented by Formula (A), and a polymer compound (Y) containing a repeating unit represented by Formula (B) and a repeating unit represented by Formula (C).

8. 发明授权

US09359343B2 Fluorine atom-containing disulfide compound 有权
标题翻译：含氟原子的二硫化物
公开(公告)号：US09359343B2
公开(公告)日：2016-06-07
申请号：US14867259
申请日：2015-09-28
申请人： FUJIFILM Corporation
发明人： Tokihiko Matsumura , Yasuaki Matsushita
IPC分类号： C07D417/12 , C07D285/125
CPC分类号： C07D417/12 , C07D285/125
摘要： A disulfide compound represented by formula (1): (in formula (1), R1 and R2 each independently represent a hydrogen atom or an alkyl group; R3 and R4 each independently represent a hydrogen atom or a substituent; Y represents a single bond, —CO— or —COO—; Rf represents a linear or branched perfluoroalkylene group having 1 to 20 carbon atoms or a linear or branched perfluoroether group having 1 to 20 carbon atoms; when Y is a single bond or —CO—, n represents 0 and m represents an integer of 0 to 6; when Y is —COO—, n represents 1 or 2 and m represents an integer of 1 to 6; and p represents an integer of 2 or 3 and 1 represents an integer of 0 or 1 such that p+1=3).
摘要翻译：由式（1）表示的二硫化物：（式（1）中，R 1和R 2各自独立地表示氢原子或烷基; R 3和R 4各自独立地表示氢原子或取代基; Y表示单键， -CO-或-COO-; R f表示碳原子数1〜20的直链或支链全氟亚烷基或碳原子数1〜20的直链或支链全氟醚基;当Y为单键或-CO-时，n表示0 m表示0〜6的整数，Y为-COO-，n表示1或2，m表示1〜6的整数，p表示2或3的整数，1表示0或1的整数。使得p + 1 = 3）。

9. 发明授权

US09255077B2 Fluorine atom-containing mercapto compound 有权
标题翻译：含氟原子的巯基化合物
公开(公告)号：US09255077B2
公开(公告)日：2016-02-09
申请号：US14729931
申请日：2015-06-03
申请人： FUJIFILM CORPORATION
发明人： Toyohisa Oya , Tokihiko Matsumura , Yasuaki Matsushita
IPC分类号： C07D285/125
CPC分类号： C07D285/125
摘要： A mercapto compound is represented by formula (1) (in formula (1), R1 and R2 each independently represent a hydrogen atom or an alkyl group; R3 and R4 each independently represent a hydrogen atom or a substituent; n represents 1 or 2; m represents an integer of 1 to 6; l represents an integer of 1 to 6; q represents 0 or 1; p represents 2 or 3; p+q represents 3; X represents a perfluoroalkyl group having 1 to 14 carbon atoms; when n is 2, structures of units represented by CR1R2 may be identical to or different from each other; and when m is 2 or more, structures of units represented by CR3R4 may be identical to or different from each other). The mercapto compound is novel and has excellent affinity for a fluorine-containing polymer and a fluorine-containing solvent.
摘要翻译：巯基化合物由式（1）表示（式（1）中，R 1和R 2各自独立地表示氢原子或烷基; R 3和R 4各自独立地表示氢原子或取代基; n表示1或2; m表示1〜6的整数，l表示1〜6的整数，q表示0或1，p表示2或3，p + q表示3，X表示碳原子数1〜14的全氟烷基，n 是2，由CR1R2表示的单元的结构可以彼此相同或不同;当m为2以上时，由CR 3 R 4表示的单元的结构可以相同或不同）。巯基化合物是新颖的，对含氟聚合物和含氟溶剂具有优异的亲和力。

10. 发明授权

US10947389B2 Composition, film, near infrared cut filter, laminate, pattern forming method, solid image pickup element, image display device, infrared sensor, and color filter 有权
公开(公告)号：US10947389B2
公开(公告)日：2021-03-16
申请号：US16019178
申请日：2018-06-26
申请人： FUJIFILM Corporation
发明人： Tokihiko Matsumura , Daisuke Sasaki , Kyohei Arayama , Yoshihiro Jimbo , Kazuya Oota , Keisuke Arimura , Takahiro Okawara
IPC分类号： C09B57/00 , G02B5/22 , G03F7/031 , H01L27/14 , C09B23/14 , G02B5/20 , C08F2/48 , C08L33/10 , C09B23/08 , C09B23/01 , C08F220/18 , C08K5/55 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/38 , H01L27/146 , H01L27/148 , G03F7/075 , G03F7/027 , G03F7/00 , G03F7/033
摘要： The composition includes two or more near infrared absorbing compounds having an absorption maximum in a wavelength range of 650 to 1000 nm and having a solubility of 0.1 mass % or lower in water at 23° C., in which the two or more near infrared absorbing compounds include a first near infrared absorbing compound having an absorption maximum in a wavelength range of 650 to 1000 nm, and a second near infrared absorbing compound having an absorption maximum in a wavelength range of 650 to 1000 nm which is shorter than the absorption maximum of the first near infrared absorbing compound, and a difference between the absorption maximum of the first near infrared absorbing compound and the absorption maximum of the second near infrared absorbing compound is 1 to 150 nm.

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