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1. 发明授权

US09577045B2 Silicon carbide power bipolar devices with deep acceptor doping 有权
标题翻译：具有深受体掺杂的碳化硅功率双极器件
公开(公告)号：US09577045B2
公开(公告)日：2017-02-21
申请号：US14671561
申请日：2015-03-27
申请人： FAIRCHILD SEMICONDUCTOR CORPORATION
发明人： Andrei Konstantinov
IPC分类号： H01L29/16 , H01L29/167 , H01L29/10 , H01L29/74 , H01L29/732 , H01L29/739 , H01L29/423 , H01L29/66
CPC分类号： H01L29/1608 , H01L21/046 , H01L29/1004 , H01L29/167 , H01L29/42304 , H01L29/66068 , H01L29/66234 , H01L29/732 , H01L29/7395 , H01L29/74
摘要： In a general aspect, a power semiconductor device can include a collector region disposed on a substrate, the collector region can include n-type silicon carbide (SiC). The power semiconductor device can also include a base region disposed on the collector region. The base region can include p-type SiC doped with gallium. The power semiconductor device can include an emitter region disposed on the base region. The emitter region can include n-type SiC carbide.
摘要翻译：在一般的方面，功率半导体器件可以包括设置在衬底上的集电极区域，集电极区域可以包括n型碳化硅（SiC）。功率半导体器件还可以包括设置在集电极区域上的基极区域。基极区可以包括掺杂有镓的p型SiC。功率半导体器件可以包括设置在基极区上的发射极区域。发射极区域可以包括n型SiC碳化物。

2. 发明授权

US09461108B2 SiC power device having a high voltage termination 有权
标题翻译：具有高电压端接的SiC功率器件
公开(公告)号：US09461108B2
公开(公告)日：2016-10-04
申请号：US14750655
申请日：2015-06-25
申请人： FAIRCHILD SEMICONDUCTOR CORPORATION
发明人： Andrei Konstantinov
IPC分类号： H01L29/15 , H01L29/06 , H01L29/16 , H01L29/10 , H01L29/861 , H01L29/78 , H01L29/66 , H01L29/872 , H01L29/732
CPC分类号： H01L29/0615 , H01L29/0619 , H01L29/0661 , H01L29/1095 , H01L29/1608 , H01L29/6606 , H01L29/66068 , H01L29/732 , H01L29/7811 , H01L29/7828 , H01L29/861 , H01L29/872
摘要： In one general aspect, an apparatus can include a semiconductor region including a silicon carbide material and a junction termination extension implant region disposed in the semiconductor region. The apparatus can include a low interface state density portion of a dielectric layer having at least a portion in contact with the junction termination extension implant region.
摘要翻译：在一个一般方面，装置可以包括半导体区域，该半导体区域包括碳化硅材料和设置在半导体区域中的接合端接延伸注入区域。该装置可以包括具有至少一部分与连接端接延伸植入区域接触的介电层的低界面状态密度部分。

3. 发明申请

US20130087808A1 SIC BIPOLAR JUNCTION TRANSISTOR WITH OVERGROWN EMITTER 有权
标题翻译： SIC双极晶体管，具有超大型发光二极管
公开(公告)号：US20130087808A1
公开(公告)日：2013-04-11
申请号：US13688067
申请日：2012-11-28
申请人： Fairchild Semiconductor Corporation
发明人： Andrei Konstantinov
IPC分类号： H01L29/73 , H01L29/06 , H01L29/66
CPC分类号： H01L29/73 , H01L29/045 , H01L29/06 , H01L29/0611 , H01L29/1004 , H01L29/1608 , H01L29/66053 , H01L29/66068 , H01L29/66234 , H01L29/7325
摘要： New designs for silicon carbide (SiC) bipolar junction transistors (BJTs) and new methods of manufacturing such SiC BJTs are provided. The SiC BJT can include a collector region, a base region, and an emitter region where the collector region, the base region, and the emitter region are arranged as a stack. The emitter region can form an elevated structure defined by outer sidewalls disposed on the stack. The base region can have a portion interfacing the emitter region and defining an intrinsic base region. The intrinsic base region can include a first portion laterally spaced away from the outer sidewalls of the emitter region by a second portion of the base region that has a dopant dose higher than a dopant dose of the first portion.
摘要翻译：提供了碳化硅（SiC）双极结晶体管（BJT）的新设计和制造这种SiC BJT的新方法。 SiC BJT可以包括集电极区域，基极区域和发射极区域，其中集电极区域，基极区域和发射极区域被布置为堆叠。发射极区域可以形成由设置在堆叠上的外侧壁限定的升高结构。基区可以具有与发射极区接口并限定本征基区的部分。本征基极区域可以包括第一部分，该第一部分通过基极区域的第二部分横向间隔离发射极区域的外侧壁，该第二部分具有高于第一部分的掺杂剂剂量的掺杂剂剂量。

4. 发明授权

US09893176B2 Silicon-carbide trench gate MOSFETs 有权
公开(公告)号：US09893176B2
公开(公告)日：2018-02-13
申请号：US15275184
申请日：2016-09-23
申请人： FAIRCHILD SEMICONDUCTOR CORPORATION
发明人： Andrei Konstantinov
IPC分类号： H01L29/78 , H01L29/16 , H01L29/06 , H01L29/423 , H01L29/66 , H01L21/04 , H01L29/10 , H01L29/167 , H01L29/808
CPC分类号： H01L29/7803 , H01L21/0455 , H01L21/046 , H01L21/0465 , H01L21/047 , H01L21/049 , H01L29/0611 , H01L29/0638 , H01L29/1037 , H01L29/1095 , H01L29/1608 , H01L29/167 , H01L29/4236 , H01L29/42368 , H01L29/66068 , H01L29/7813 , H01L29/8083
摘要： In a general aspect, an apparatus can include a silicon carbide (SiC) trench gate MOSFET with improved operation due, at least in part, to a reduced gate capacitance. In the SiC trench gate MOSFET, a thick gate oxide can be formed on a bottom surface of the gate trench and a built-in channel, having a vertical portion and a lateral portion, can be formed to electrically connect a vertical inversion-layer channel, such as in a channel stopper layer, to a vertical JFET channel region and a drift region.

5. 发明授权

US08994442B2 Switching circuit and controller circuit 有权
标题翻译：开关电路和控制器电路
公开(公告)号：US08994442B2
公开(公告)日：2015-03-31
申请号：US13920862
申请日：2013-06-18
申请人： Fairchild Semiconductor Corporation
发明人： Andrei Konstantinov
IPC分类号： H03K17/60 , H03K17/0414 , H03K17/16
CPC分类号： H03K17/0414 , H03K17/127 , H03K17/164
摘要： New designs of high power switching circuits and controller circuits are provided. Principal silicon bipolar switch is connected in parallel to snubber switch that is formed of a wide bandgap material. The snubber switch is activated during at least one of turn-on and turn-off of the principal silicon switch so as to minimize (or reduce) the switching loss and to bypass safe operation area limitations.
摘要翻译：提供了大功率开关电路和控制器电路的新设计。主要硅双极开关与由宽带隙材料形成的缓冲开关并联连接。在主硅开关的导通和关断中的至少一个中，缓冲开关被激活，以便最小化（或减少）开关损耗并绕过安全操作区域限制。

6. 发明授权

US10355123B2 Silicon-carbide trench gate MOSFETs and methods of manufacture 有权
公开(公告)号：US10355123B2
公开(公告)日：2019-07-16
申请号：US15858406
申请日：2017-12-29
申请人： FAIRCHILD SEMICONDUCTOR CORPORATION
发明人： Andrei Konstantinov
IPC分类号： H01L29/78 , H01L29/16 , H01L29/06 , H01L29/423 , H01L29/66 , H01L21/04 , H01L29/10 , H01L29/167 , H01L29/808 , H01L29/417 , H01L29/08
摘要： In a general aspect, an apparatus can include a semiconductor substrate, a drift region disposed in the semiconductor substrate; a body region disposed in the drift region and a source region disposed in the body region. The apparatus can also include a gate trench disposed in the semiconductor substrate. The apparatus can further include a gate dielectric disposed on a sidewall and a bottom surface of the gate trench, the gate dielectric on the sidewall defining a first interface with the body region and the gate dielectric on the bottom surface defining a second interface with the body region. The apparatus can still further include a gate electrode disposed on the gate dielectric and a lateral channel region disposed in the body region, the lateral channel region being defined along the second interface.

7. 发明授权

US09515176B2 Silicon carbide bipolar junction transistor including shielding regions 有权
标题翻译：碳化硅双极结晶体管包括屏蔽区域
公开(公告)号：US09515176B2
公开(公告)日：2016-12-06
申请号：US13938006
申请日：2013-07-09
申请人： Fairchild Semiconductor Corporation
发明人： Andrei Konstantinov
IPC分类号： H01L29/66 , H01L29/73 , H01L29/04 , H01L29/10 , H01L29/16 , H01L29/732 , H01L29/06
CPC分类号： H01L29/73 , H01L29/045 , H01L29/06 , H01L29/0611 , H01L29/1004 , H01L29/1608 , H01L29/66053 , H01L29/66068 , H01L29/66234 , H01L29/7325
摘要： A silicon carbide (SiC) bipolar junction transistor (BJT) and a method of manufacturing such a SiC BJT is provided. The SiC BJT can include a collector region having a first conductivity type, a base region having a second conductivity type opposite the first conductivity type, and an emitter region having the first conductivity type, the collector region, the base region and the emitter region being arranged as a stack. The emitter region defining an elevated structure defined at least in part by an outer sidewall on top of the stack. The base region having a portion capped by the emitter region and defining an intrinsic base region where the intrinsic base region includes a portion extending from the emitter region to the collector region. The SiC BJT can include a first shielding region and a second shield region each having the second conductivity type.
摘要翻译：提供了碳化硅（SiC）双极结型晶体管（BJT）和制造这种SiC BJT的方法。 SiC BJT可以包括具有第一导电类型的集电极区域，具有与第一导电类型相反的第二导电类型的基极区域和具有第一导电类型的发射极区域，集电极区域，基极区域和发射极区域是排列成堆叠。所述发射极区限定至少部分地由所述堆叠顶部的外侧壁限定的升高的结构。该基极区域具有由发射极区域覆盖的部分并且限定本征基极区域，其中本征基极区域包括从发射极区域延伸到集电极区域的部分。 SiC BJT可以包括具有第二导电类型的第一屏蔽区域和第二屏蔽区域。

8. 发明授权

US09466709B2 Silicon-carbide trench gate MOSFETs 有权
标题翻译：碳化硅沟槽栅极MOSFET
公开(公告)号：US09466709B2
公开(公告)日：2016-10-11
申请号：US14744958
申请日：2015-06-19
申请人： FAIRCHILD SEMICONDUCTOR CORPORATION
发明人： Andrei Konstantinov
IPC分类号： H01L29/78 , H01L29/16 , H01L29/423 , H01L29/10 , H01L29/167
CPC分类号： H01L29/7813 , H01L21/046 , H01L21/049 , H01L29/1037 , H01L29/1095 , H01L29/1608 , H01L29/167 , H01L29/4236 , H01L29/66068
摘要： In a general aspect, an apparatus can include a semiconductor substrate, a drift region disposed in the semiconductor substrate; a body region disposed in the drift region and a source region disposed in the body region. The apparatus can also include a gate trench disposed in the semiconductor substrate. The apparatus can further include a gate dielectric disposed on a sidewall and a bottom surface of the gate trench, the gate dielectric on the sidewall defining a first interface with the body region and the gate dielectric on the bottom surface defining a second interface with the body region. The apparatus can still further include a gate electrode disposed on the gate dielectric and a lateral channel region disposed in the body region, the lateral channel region being defined along the second interface.
摘要翻译：在一般方面，一种装置可以包括半导体衬底，设置在半导体衬底中的漂移区; 设置在所述漂移区域中的身体区域和设置在所述身体区域中的源区域。该装置还可以包括设置在半导体衬底中的栅极沟槽。该设备还可以包括设置在栅极沟槽的侧壁和底表面上的栅极电介质，侧壁上的栅极电介质限定与主体区域的第一界面，底表面上的栅极电介质限定与主体的第二界面地区。该装置还可以包括设置在栅极电介质上的栅电极和设置在主体区域中的横向沟道区，沿着第二界面限定横向沟道区。

9. 发明授权

US08704546B2 Method of manufacturing a SiC bipolar junction transistor and SiC bipolar junction transistor thereof 有权
公开(公告)号：US08704546B2
公开(公告)日：2014-04-22
申请号：US13689681
申请日：2012-11-29
申请人： Fairchild Semiconductor Corporation
发明人： Andrei Konstantinov
IPC分类号： G01R31/26
CPC分类号： H01L29/73 , H01L21/02378 , H01L29/045 , H01L29/1608 , H01L29/32 , H01L29/66068 , H01L29/732
摘要： A method of manufacturing a silicon carbide (SiC) bipolar junction transistor (BJT) and a SiC BJT are provided. The SiC BJT comprises an emitter region, a base region and a collector region. The collector region is arranged on a substrate having an off-axis orientation of about 4 degrees or lower. Further, a defect termination layer (DTL) is arranged between the substrate and the collector region. A thickness and a doping level of the DTL are configured to terminate basal plane dislocations in the DTL and reduce the growth of defects from the DTL to the collector region. At least some of the embodiments are advantageous in that SiC BJTs with improved stability are provided. Further, a method of evaluating the degradation performance of a SiC BJT is provided.

10. 发明授权

US10026805B2 Avalanche-rugged silicon carbide (SiC) power device 有权
公开(公告)号：US10026805B2
公开(公告)日：2018-07-17
申请号：US15677400
申请日：2017-08-15
申请人： FAIRCHILD SEMICONDUCTOR CORPORATION
发明人： Andrei Konstantinov
IPC分类号： H01L29/06 , H01L29/872 , H01L29/16
摘要： In at least one general aspect, a silicon carbide (SiC) device can include a drift region and a termination region at least partially surrounding the SiC device. The termination region can have a first transition zone and a second transition zone. The first transition zone can be disposed between a first zone and a second zone, and the second zone can have a top surface lower in depth than a depth of a top surface of the first zone. The first transition zone can have a recess, and the second transition zone can be disposed between the second zone and a third zone.

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