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1. 发明授权

US09037279B2 Clustering for prediction models in process control and for optimal dispatching 有权
标题翻译：用于过程控制和最优调度的预测模型的聚类
公开(公告)号：US09037279B2
公开(公告)日：2015-05-19
申请号：US12831597
申请日：2010-07-07
申请人： Francis Ko , Tzu-yu Wang , Kewei Zuo , Henry Lo , Jean Wang , Chih-Wei Lai
发明人： Francis Ko , Tzu-yu Wang , Kewei Zuo , Henry Lo , Jean Wang , Chih-Wei Lai
IPC分类号： G06F19/00 , H01L21/00 , G05B17/02
CPC分类号： G05B19/41885 , G05B17/02 , G05B2219/45032
摘要： A first embodiment is a method for semiconductor process control comprising clustering processing tools of a processing stage into a tool cluster based on processing data and forming a prediction model for processing a semiconductor wafer based on the tool cluster. A second embodiment is a method for semiconductor process control comprising providing cluster routes between first stage tool clusters and second stage tool clusters, assigning a comparative optimization ranking to each cluster route, and scheduling processing of wafers. The comparative optimization ranking identifies comparatively which cluster routes provide for high wafer processing uniformity. Further, wafers that require high wafer processing uniformity are scheduled to be processed along one cluster route that has a high comparative optimization ranking that identifies the one cluster route to have a highest wafer processing uniformity, and wafers that do not require high wafer processing uniformity are scheduled to be processed along another cluster route.
摘要翻译：第一实施例是一种用于半导体处理控制的方法，其包括基于处理数据将处理级的处理工具集群到工具集群中，并且基于工具集群形成用于处理半导体晶片的预测模型。第二实施例是一种用于半导体处理控制的方法，包括提供第一级工具集群和第二级工具集群之间的集群路由，为每个集群路由分配比较优化等级，以及调度晶片的处理。比较优化排名确定了哪些集群路由提供高晶圆处理均匀性。此外，需要高晶圆处理均匀性的晶片被调度为沿着具有高比较优化等级的一个集群路由进行处理，该优先等级标识一个集群路由以具有最高的晶片处理均匀性，并且不需要高晶片处理均匀性的晶片是计划沿着另一个集群路由处理。

2. 发明申请

US20110060441A1 Clustering for Prediction Models in Process Control and for Optimal Dispatching 有权
标题翻译：过程控制和最优调度中预测模型的聚类
公开(公告)号：US20110060441A1
公开(公告)日：2011-03-10
申请号：US12831597
申请日：2010-07-07
申请人： Francis Ko , Tzu-Yu Wang , Kewei Zuo , Henry Lo , Jean Wang , Chih-Wei Lai
发明人： Francis Ko , Tzu-Yu Wang , Kewei Zuo , Henry Lo , Jean Wang , Chih-Wei Lai
IPC分类号： G06F17/00
CPC分类号： G05B19/41885 , G05B17/02 , G05B2219/45032
摘要： A first embodiment is a method for semiconductor process control comprising clustering processing tools of a processing stage into a tool cluster based on processing data and forming a prediction model for processing a semiconductor wafer based on the tool cluster. A second embodiment is a method for semiconductor process control comprising providing cluster routes between first stage tool clusters and second stage tool clusters, assigning a comparative optimization ranking to each cluster route, and scheduling processing of wafers. The comparative optimization ranking identifies comparatively which cluster routes provide for high wafer processing uniformity. Further, wafers that require high wafer processing uniformity are scheduled to be processed along one cluster route that has a high comparative optimization ranking that identifies the one cluster route to have a highest wafer processing uniformity, and wafers that do not require high wafer processing uniformity are scheduled to be processed along another cluster route.
摘要翻译：第一实施例是一种用于半导体处理控制的方法，其包括基于处理数据将处理级的处理工具集群到工具集群中，并且基于工具集群形成用于处理半导体晶片的预测模型。第二实施例是一种用于半导体处理控制的方法，包括提供第一级工具集群和第二级工具集群之间的集群路由，为每个集群路由分配比较优化等级，以及调度晶片的处理。比较优化排名确定了哪些集群路由提供高晶圆处理均匀性。此外，需要高晶圆处理均匀性的晶片被调度为沿着具有高比较优化等级的一个集群路由进行处理，该优先等级标识一个集群路由以具有最高的晶片处理均匀性，并且不需要高晶片处理均匀性的晶片是计划沿着另一个集群路由处理。

3. 发明授权

US08433434B2 Near non-adaptive virtual metrology and chamber control 有权
标题翻译：近非自适应虚拟计量和室控制
公开(公告)号：US08433434B2
公开(公告)日：2013-04-30
申请号：US12766626
申请日：2010-04-23
申请人： Amy Wang , Chen-Hua Yu , Jean Wang , Henry Lo , Francis Ko , Chih-Wei Lai , Kewei Zuo
发明人： Amy Wang , Chen-Hua Yu , Jean Wang , Henry Lo , Francis Ko , Chih-Wei Lai , Kewei Zuo
IPC分类号： G06F19/00
CPC分类号： G05B13/048
摘要： Embodiments of the present invention relate to a method for a near non-adaptive virtual metrology for wafer processing control. In accordance with an embodiment of the present invention, a method for processing control comprises diagnosing a chamber of a processing tool that processes a wafer to identify a key chamber parameter, and controlling the chamber based on the key chamber parameter if the key chamber parameter can be controlled, or compensating a prediction model by changing to a secondary prediction model if the key chamber parameter cannot be sufficiently controlled.
摘要翻译：本发明的实施例涉及一种用于晶片处理控制的近非自适应虚拟测量方法。根据本发明的实施例，一种用于处理控制的方法包括：诊断处理工具的室，其处理晶片以识别密钥室参数，以及如果密钥室参数可以基于密钥室参数来控制室如果密钥室参数不能被充分地控制，则通过改变为次级预测模型来控制或补偿预测模型。

4. 发明申请

US20110009998A1 Near Non-Adaptive Virtual Metrology and Chamber Control 有权
标题翻译：近非自适应虚拟计量和室控制
公开(公告)号：US20110009998A1
公开(公告)日：2011-01-13
申请号：US12766626
申请日：2010-04-23
申请人： Amy Wang , Chen-Hua Yu , Jean Wang , Henry Lo , Francis Ko , Chih-Wei Lai , Kewei Zuo
发明人： Amy Wang , Chen-Hua Yu , Jean Wang , Henry Lo , Francis Ko , Chih-Wei Lai , Kewei Zuo
IPC分类号： G05B13/04
CPC分类号： G05B13/048
摘要： Embodiments of the present invention relate to a method for a near non-adaptive virtual metrology for wafer processing control. In accordance with an embodiment of the present invention, a method for processing control comprises diagnosing a chamber of a processing tool that processes a wafer to identify a key chamber parameter, and controlling the chamber based on the key chamber parameter if the key chamber parameter can be controlled, or compensating a prediction model by changing to a secondary prediction model if the key chamber parameter cannot be sufficiently controlled.
摘要翻译：本发明的实施例涉及一种用于晶片处理控制的近非自适应虚拟测量方法。根据本发明的实施例，一种用于处理控制的方法包括：诊断处理工具的室，其处理晶片以识别密钥室参数，以及如果密钥室参数可以基于密钥室参数来控制室如果密钥室参数不能被充分地控制，则通过改变为次级预测模型来控制或补偿预测模型。

5. 发明申请

US20080275586A1 Novel Methodology To Realize Automatic Virtual Metrology 有权
标题翻译：实现自动虚拟计量的新方法
公开(公告)号：US20080275586A1
公开(公告)日：2008-11-06
申请号：US12025933
申请日：2008-02-05
申请人： Francis Ko , Chih-Wei Lai , Kewei Zuo , Henry Lo , Jean Wang , Ping-Hsu Chen , Chun-Hsien Lin , Chen-Hua Yu
发明人： Francis Ko , Chih-Wei Lai , Kewei Zuo , Henry Lo , Jean Wang , Ping-Hsu Chen , Chun-Hsien Lin , Chen-Hua Yu
IPC分类号： G06F17/00
CPC分类号： G05B23/0221
摘要： A method to enable wafer result prediction includes collecting manufacturing data from various semiconductor manufacturing tools and metrology tools; choosing key parameters using an autokey method based on the manufacturing data; building a virtual metrology based on the key parameters; and predicting wafer results using the virtual metrology.
摘要翻译：允许晶片结果预测的方法包括从各种半导体制造工具和计量工具收集制造数据; 使用基于制造数据的自动密钥方法选择关键参数; 基于关键参数构建虚拟计量; 并使用虚拟计量来预测晶圆结果。

6. 发明授权

US08682466B2 Automatic virtual metrology for semiconductor wafer result prediction 有权
标题翻译：自动虚拟测量用于半导体晶圆结果预测
公开(公告)号：US08682466B2
公开(公告)日：2014-03-25
申请号：US12025933
申请日：2008-02-05
申请人： Francis Ko , Chih-Wei Lai , Kewei Zuo , Henry Lo , Jean Wang , Ping-Hsu Chen , Chun-Hsien Lim , Chen-Hua Yu
发明人： Francis Ko , Chih-Wei Lai , Kewei Zuo , Henry Lo , Jean Wang , Ping-Hsu Chen , Chun-Hsien Lim , Chen-Hua Yu
IPC分类号： G06F17/50
CPC分类号： G05B23/0221
摘要： A method to enable wafer result prediction includes collecting manufacturing data from various semiconductor manufacturing tools and metrology tools; choosing key parameters using an autokey method based on the manufacturing data; building a virtual metrology based on the key parameters; and predicting wafer results using the virtual metrology.
摘要翻译：允许晶片结果预测的方法包括从各种半导体制造工具和计量工具收集制造数据; 使用基于制造数据的自动密钥方法选择关键参数; 基于关键参数构建虚拟计量; 并使用虚拟计量来预测晶圆结果。

7. 发明授权

US07634325B2 Prediction of uniformity of a wafer 失效
标题翻译：预测晶圆的均匀性
公开(公告)号：US07634325B2
公开(公告)日：2009-12-15
申请号：US11744107
申请日：2007-05-03
申请人： Jean Wang , Francis Ko , Ping-Hsu Chen , Henry Lo , Chih-Wei Lai
发明人： Jean Wang , Francis Ko , Ping-Hsu Chen , Henry Lo , Chih-Wei Lai
IPC分类号： G06F19/00
CPC分类号： H01L22/20 , G01N21/9501 , H01L22/12
摘要： A method of monitoring uniformity of a wafer is provided. A wafer parameter is selected. Manufacturing data is collected. The manufacturing data includes measurements of the selected wafer parameter. An average offset profile of the wafer parameter for a first and second wafer is determined using the manufacturing data. The first and second wafer are associated with a product type and were processed by a processing tool. An offset profile for a third wafer is predicted for a wafer using the average offset profile. The third wafer is associated with the product type and was processed by the processing tool.
摘要翻译：提供了一种监测晶片均匀性的方法。选择晶圆参数。收集制造数据。制造数据包括所选晶片参数的测量。使用制造数据确定第一和第二晶片的晶片参数的平均偏移轮廓。第一和第二晶片与产品类型相关联并且由处理工具处理。使用平均偏移轮廓为晶片预测第三晶片的偏移轮廓。第三个晶片与产品类型相关联，并由加工工具处理。

8. 发明申请

US20080305563A1 Method and system for controlling copper chemical mechanical polish uniformity 有权
标题翻译：控制铜化学机械抛光均匀性的方法和系统
公开(公告)号：US20080305563A1
公开(公告)日：2008-12-11
申请号：US11810720
申请日：2007-06-07
申请人： Francis Ko , Chun-Hsien Lin , Jean Wang , Chih-Wei Lai , Ping-Hsu Chen , Henry Lo
发明人： Francis Ko , Chun-Hsien Lin , Jean Wang , Chih-Wei Lai , Ping-Hsu Chen , Henry Lo
IPC分类号： H01L21/306
CPC分类号： H01L22/20 , H01L21/3212 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A system and method for controlling resistivity uniformity in a Copper trench structure by controlling the CMP process is provided. A preferred embodiment comprises a system and a method in which a plurality of CMP process recipes may be created comprising at least a slurry arm position. A set of metrological data for at least one layer of the semiconductor substrate may be estimated, and an optimum CMP process recipe may be selected based on the set of metrological data. The optimum CMP process recipe may be implemented on the semiconductor substrate.
摘要翻译：提供了一种通过控制CMP工艺来控制铜沟槽结构中的电阻率均匀性的系统和方法。优选实施例包括系统和方法，其中可以创建包括至少浆料臂位置的多个CMP工艺配方。可以估计用于至少一层半导体衬底的一组计量数据，并且可以基于该组计量数据来选择最佳CMP工艺配方。可以在半导体衬底上实现最佳CMP工艺配方。

9. 发明申请

US20080275588A1 PREDICTION OF UNIFORMITY OF A WAFER 失效
标题翻译：预测轮胎的均匀性
公开(公告)号：US20080275588A1
公开(公告)日：2008-11-06
申请号：US11744107
申请日：2007-05-03
申请人： Jean Wang , Francis Ko , Ping-Hsu Chen , Henry Lo , Chih-Wei Lai
发明人： Jean Wang , Francis Ko , Ping-Hsu Chen , Henry Lo , Chih-Wei Lai
IPC分类号： G06F19/00
CPC分类号： H01L22/20 , G01N21/9501 , H01L22/12
摘要： A method of monitoring uniformity of a wafer is provided. A wafer parameter is selected. Manufacturing data is collected. The manufacturing data includes measurements of the selected wafer parameter. An average offset profile of the wafer parameter for a first and second wafer is determined using the manufacturing data. The first and second wafer are associated with a product type and were processed by a processing tool. An offset profile for a third wafer is predicted for a wafer using the average offset profile. The third wafer is associated with the product type and was processed by the processing tool.
摘要翻译：提供了一种监测晶片均匀性的方法。选择晶圆参数。收集制造数据。制造数据包括所选晶片参数的测量。使用制造数据确定第一和第二晶片的晶片参数的平均偏移轮廓。第一和第二晶片与产品类型相关联并且由处理工具处理。使用平均偏移轮廓为晶片预测第三晶片的偏移轮廓。第三个晶片与产品类型相关联，并由加工工具处理。

10. 发明授权

US08409993B2 Method and system for controlling copper chemical mechanical polish uniformity 有权
标题翻译：控制铜化学机械抛光均匀性的方法和系统
公开(公告)号：US08409993B2
公开(公告)日：2013-04-02
申请号：US11810720
申请日：2007-06-07
申请人： Francis Ko , Chun-Hsien Lin , Jean Wang , Chih-Wei Lai , Ping-Hsu Chen , Henry Lo
发明人： Francis Ko , Chun-Hsien Lin , Jean Wang , Chih-Wei Lai , Ping-Hsu Chen , Henry Lo
IPC分类号： H01L21/302
CPC分类号： H01L22/20 , H01L21/3212 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A system and method for controlling resistivity uniformity in a Copper trench structure by controlling the CMP process is provided. A preferred embodiment comprises a system and a method in which a plurality of CMP process recipes may be created comprising at least a slurry arm position. A set of metrological data for at least one layer of the semiconductor substrate may be estimated, and an optimum CMP process recipe may be selected based on the set of metrological data. The optimum CMP process recipe may be implemented on the semiconductor substrate.
摘要翻译：提供了一种通过控制CMP工艺来控制铜沟槽结构中的电阻率均匀性的系统和方法。优选实施例包括系统和方法，其中可以创建包括至少浆料臂位置的多个CMP工艺配方。可以估计用于至少一层半导体衬底的一组计量数据，并且可以基于该组计量数据来选择最佳CMP工艺配方。可以在半导体衬底上实现最佳CMP工艺配方。

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