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1. 发明授权

US08183517B2 Photosensitive cell with multiple light guides having differing cross-sectional areas and method of making the same 有权
标题翻译：具有不同横截面积的多个光导的感光单元及其制造方法
公开(公告)号：US08183517B2
公开(公告)日：2012-05-22
申请号：US12798977
申请日：2010-04-15
申请人： Francois Roy , Thomas Girault
发明人： Francois Roy , Thomas Girault
IPC分类号： G02B27/10
CPC分类号： H01L27/14625 , G02B6/12004 , G02B6/1228 , G02B6/136 , G02B6/4298 , H01L27/14627 , H01L27/14643 , H01L27/14685
摘要： An integrated circuit having a photosensitive cell with an entry face, a photosensitive element and at least two elements forming a light guide and placed between the entry face and the photosensitive element. The second element is located between the first element and the entry face such that the two elements guide the light coming from the entry face onto the photosensitive element and each element forms a light guide. The inner volume has a first surface located on the same side as the photosensitive element, a second surface located on the same side as the entry face, and a lateral surface joining said first surface to said second surface and separating the inner volume from the outer volume. The first surface of the inner volume of the second element has a smaller area than that of the second surface of the inner volume of the first element.
摘要翻译：一种集成电路，其具有具有入射面的感光单元，感光元件和至少两个元件，形成光导并且放置在入射面和感光元件之间。第二元件位于第一元件和入口面之间，使得两个元件将来自入口面的光引导到感光元件上，并且每个元件形成光导。内部体积具有位于与感光元件相同侧的第一表面，位于与入射面相同侧的第二表面，以及将所述第一表面连接到所述第二表面的侧表面，并将内部体积与外部卷。第二元件的内部体积的第一表面具有比第一元件的内部容积的第二表面的面积小的面积。

2. 发明申请

US20100200943A1 Photosensitive cell with light guide 有权
公开(公告)号：US20100200943A1
公开(公告)日：2010-08-12
申请号：US12798977
申请日：2010-04-15
申请人： Francois Roy , Thomas Girault
发明人： Francois Roy , Thomas Girault
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14625 , G02B6/12004 , G02B6/1228 , G02B6/136 , G02B6/4298 , H01L27/14627 , H01L27/14643 , H01L27/14685
摘要： An integrated circuit having a photosensitive cell with an entry face, a photosensitive element and at least two elements forming a light guide and placed between the entry face and the photosensitive element. The second element is located between the first element and the entry face such that the two elements guide the light coming from the entry face onto the photosensitive element and each element forms a light guide. The inner volume has a first surface located on the same side as the photosensitive element, a second surface located on the same side as the entry face, and a lateral surface joining said first surface to said second surface and separating the inner volume from the outer volume. The first surface of the inner volume of the second element has a smaller area than that of the second surface of the inner volume of the first element.

3. 发明申请

US20070114627A1 Photodetector with an improved resolution 有权
标题翻译：光检测器具有改进的分辨率
公开(公告)号：US20070114627A1
公开(公告)日：2007-05-24
申请号：US11602053
申请日：2006-11-20
申请人： Francois Roy , Thomas Girault , Yann Marcellier , Caroline Bringolf-Penner
发明人： Francois Roy , Thomas Girault , Yann Marcellier , Caroline Bringolf-Penner
IPC分类号： H01L27/14
CPC分类号： H01L27/14645 , H01L27/14603 , H01L27/1463 , H01L27/14641 , H01L27/14689
摘要： A photodetector made in monolithic form in a lightly-doped substrate of a first conductivity type. This photodetector comprises at least two photodiodes and comprises a first region of the first conductivity type more heavily doped than the substrate extending at least between the two photodiodes; and a second region of the first conductivity type more heavily doped than the substrate and extending under the first region and under one of the two photodiodes, the first region or the second region, with the first region, delimiting a substrate portion at the level of said one of the two photodiodes, and the second region, with the first region, delimiting an additional substrate portion at the level of the other one of the two photodiodes.
摘要翻译：在第一导电类型的轻掺杂衬底中制成单片形式的光电探测器。该光电检测器包括至少两个光电二极管并且包括比至少在两个光电二极管之间延伸的衬底更重掺杂的第一导电类型的第一区域; 以及第一导电类型的第二区域，其比衬底更重掺杂，并且在第一区域的第一区域下方和在两个光电二极管中的一个之下延伸，第一区域或第二区域具有第一区域，将衬底部分限定在所述两个光电二极管中的一个以及具有第一区域的第二区域限定在两个光电二极管中的另一个的水平处的附加衬底部分。

4. 发明申请

US20070145246A1 Photosensitive cell with light guide 有权
标题翻译：感光细胞带光导
公开(公告)号：US20070145246A1
公开(公告)日：2007-06-28
申请号：US11605847
申请日：2006-11-28
申请人： Francois Roy , Thomas Girault
发明人： Francois Roy , Thomas Girault
IPC分类号： H01L31/00
CPC分类号： H01L27/14625 , G02B6/12004 , G02B6/1228 , G02B6/136 , G02B6/4298 , H01L27/14627 , H01L27/14643 , H01L27/14685
摘要： An integrated circuit having a photosensitive cell with an entry face, a photosensitive element and at least two elements forming a light guide and placed between the entry face and the photosensitive element. The second element is located between the first element and the entry face such that the two elements guide the light coming from the entry face onto the photosensitive element and each element forms a light guide. The inner volume has a first surface located on the same side as the photosensitive element, a second surface located on the same side as the entry face, and a lateral surface joining said first surface to said second surface and separating the inner volume from the outer volume. The first surface of the inner volume of the second element has a smaller area than that of the second surface of the inner volume of the first element.
摘要翻译：一种集成电路，其具有具有入射面的感光单元，感光元件和至少两个元件，形成光导并且放置在入射面和感光元件之间。第二元件位于第一元件和入口面之间，使得两个元件将来自入口面的光引导到感光元件上，并且每个元件形成光导。内部体积具有位于与感光元件相同侧的第一表面，位于与入射面相同侧的第二表面，以及将所述第一表面连接到所述第二表面的侧表面，并将内部体积与外部卷。第二元件的内部体积的第一表面具有比第一元件的内部容积的第二表面的面积小的面积。

5. 发明授权

US07728278B2 Photosensitive cell with light guide 有权
标题翻译：感光细胞带光导
公开(公告)号：US07728278B2
公开(公告)日：2010-06-01
申请号：US11605847
申请日：2006-11-28
申请人： Francois Roy , Thomas Girault
发明人： Francois Roy , Thomas Girault
IPC分类号： G02B27/10
CPC分类号： H01L27/14625 , G02B6/12004 , G02B6/1228 , G02B6/136 , G02B6/4298 , H01L27/14627 , H01L27/14643 , H01L27/14685
摘要： An integrated circuit having a photosensitive cell with an entry face, a photosensitive element and at least two elements forming a light guide and placed between the entry face and the photosensitive element. The second element is located between the first element and the entry face such that the two elements guide the light coming from the entry face onto the photosensitive element and each element forms a light guide. The inner volume has a first surface located on the same side as the photosensitive element, a second surface located on the same side as the entry face, and a lateral surface joining said first surface to said second surface and separating the inner volume from the outer volume. The first surface of the inner volume of the second element has a smaller area than that of the second surface of the inner volume of the first element.
摘要翻译：一种集成电路，其具有具有入射面的感光单元，感光元件和至少两个元件，形成光导并且放置在入射面和感光元件之间。第二元件位于第一元件和入口面之间，使得两个元件将来自入口面的光引导到感光元件上，并且每个元件形成光导。内部体积具有位于与感光元件相同侧的第一表面，位于与入射面相同侧的第二表面，以及将所述第一表面连接到所述第二表面的侧表面，并将内部体积与外部卷。第二元件的内部体积的第一表面具有比第一元件的内部容积的第二表面的面积小的面积。

6. 发明授权

US09681077B2 Device for transferring photogenerated charges at high frequency and applications 有权
公开(公告)号：US09681077B2
公开(公告)日：2017-06-13
申请号：US13546882
申请日：2012-07-11
申请人： Cedric Tubert , Francois Roy , Pascal Mellot
发明人： Cedric Tubert , Francois Roy , Pascal Mellot
IPC分类号： H01L29/06 , H04N5/372
CPC分类号： H04N5/372 , H01L29/06 , H01L29/0603
摘要： A device for transferring charges photogenerated in a portion of a semiconductor layer delimited by at least two parallel trenches, each trench including, lengthwise, at least a first and a second conductive regions insulated from each other and from the semiconductor layer, including the repeating of a first step of biasing of the first conductive regions to a first voltage to form a volume accumulation of holes in the area of this portion located between the first regions, while the second conductive regions are biased to a second voltage greater than the first voltage, and of a second step of biasing of the first regions to the second voltage and of the second regions to the first voltage.

7. 发明授权

US09099366B2 Photosite with pinned photodiode 有权
标题翻译：具有固定光电二极管的光电二极管
公开(公告)号：US09099366B2
公开(公告)日：2015-08-04
申请号：US13529045
申请日：2012-06-21
申请人： Francois Roy , Julien Michelot
发明人： Francois Roy , Julien Michelot
IPC分类号： H01L27/146 , H01L31/0352
CPC分类号： H01L27/14603 , H01L27/14607 , H01L27/1461 , H01L27/1463 , H01L27/14638 , H01L27/1464 , H01L31/0352
摘要： A photosite is formed in a semiconductor substrate and includes a photodiode confined in a direction orthogonal to the surface of the substrate. The photodiode includes a semiconductor zone for storing charge that is formed in an upper semiconductor region having a first conductivity type and includes a main well of a second conductivity type opposite the first conductivity type and laterally pinned in a first direction parallel to the surface of the substrate. The photodiode further includes an additional semiconductor zone including an additional well having the second conductivity type that is buried under and makes contact with the main well.
摘要翻译：在半导体衬底中形成有一个光电子结构，并包括一个限制在与衬底表面正交的方向上的光电二极管。光电二极管包括用于存储形成在具有第一导电类型的上半导体区域中的电荷的半导体区，并且包括与第一导电类型相反的第二导电类型的主阱，并且在与第一导电类型的表面平行的第一方向上横向固定基质。光电二极管还包括另外的半导体区域，该半导体区域包括具有第二导电类型的另外的阱，该第二导电类型被埋在主阱中并与主阱接触。

8. 发明申请

US20130015910A1 DEVICE FOR TRANSFERRING PHOTOGENERATED CHARGES AT HIGH FREQUENCY AND APPLICATIONS 有权
标题翻译：用于在高频和应用中传输光电充电的装置
公开(公告)号：US20130015910A1
公开(公告)日：2013-01-17
申请号：US13546882
申请日：2012-07-11
申请人： Cedric Tubert , Francois Roy , Pascal Mellot
发明人： Cedric Tubert , Francois Roy , Pascal Mellot
IPC分类号： H01L31/02 , H03K3/01
CPC分类号： H04N5/372 , H01L29/06 , H01L29/0603
摘要： A device for transferring charges photogenerated in a portion of a semiconductor layer delimited by at least two parallel trenches, each trench including, lengthwise, at least a first and a second conductive regions insulated from each other and from the semiconductor layer, including the repeating of a first step of biasing of the first conductive regions to a first voltage to form a volume accumulation of holes in the area of this portion located between the first regions, while the second conductive regions are biased to a second voltage greater than the first voltage, and of a second step of biasing of the first regions to the second voltage and of the second regions to the first voltage.
摘要翻译：一种用于转移在由至少两个平行沟槽限定的半导体层的一部分中产生的电荷的装置，每个沟槽包括彼此绝缘的半导体层的纵向至少第一和第二导电区域，包括重复将第一导电区域偏压到第一电压的第一步骤，以在位于第一区域之间的该部分的区域中形成孔的体积积累，而第二导电区域被偏压到大于第一电压的第二电压，以及将第一区域偏置到第二电压和第二区域到第一电压的第二步骤。

9. 发明申请

US20120306035A1 PROCESS FOR FABRICATING A BACKSIDE-ILLUMINATED IMAGING DEVICE AND CORRESPONDING DEVICE 有权
标题翻译：背景照明成像装置和相关装置的制作方法
公开(公告)号：US20120306035A1
公开(公告)日：2012-12-06
申请号：US13483274
申请日：2012-05-30
申请人： Francois Roy , Francois Leverd , Jens Prima
发明人： Francois Roy , Francois Leverd , Jens Prima
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14632 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： An integrated imaging device includes a silicon layer provided over a dielectric multilayer. The dielectric multilayer includes a top silicon-dioxide layer, an intermediate silicon-nitride layer and a bottom silicon-dioxide layer. Imaging circuitry is formed at a frontside of the silicon layer. An isolating structure surrounds the imaging circuitry and extends from the frontside through the silicon layer and top silicon-dioxide layer into and terminating within the intermediate silicon-nitride layer. A filter for the imaging circuitry is mounted to a backside of the bottom silicon-dioxide layer. The isolating structure is formed by a trench filled with a dielectric material.
摘要翻译：集成成像装置包括设置在电介质多层上的硅层。电介质层包括顶部二氧化硅层，中间氮化硅层和底部二氧化硅层。成像电路形成在硅层的前侧。隔离结构围绕成像电路并从前侧穿过硅层和顶部二氧化硅层延伸到中间氮化硅层内并终止于中间氮化硅层内。用于成像电路的滤光器安装在底部二氧化硅层的背面。隔离结构由填充有电介质材料的沟槽形成。

10. 发明申请

US20120211804A1 CHARGE TRANSFER PHOTOSITE 有权
标题翻译：充电转移照片
公开(公告)号：US20120211804A1
公开(公告)日：2012-08-23
申请号：US13398287
申请日：2012-02-16
申请人： Julien MICHELOT , Francois Roy , Frederic Lalanne
发明人： Julien MICHELOT , Francois Roy , Frederic Lalanne
IPC分类号： H01L31/02
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1461 , H01L27/14641 , H01L27/14643
摘要： A photosite may include, in a semi-conductor substrate, a photodiode pinched in the direction of the depth of the substrate including a charge storage zone, and a charge transfer transistor to transfer the stored charge. The charge storage zone may include a pinching in a first direction passing through the charge transfer transistor defining a constriction zone adjacent to the charge transfer transistor.
摘要翻译：光电晶体可以在半导体衬底中包括在包括电荷存储区的衬底的深度方向上夹持的光电二极管以及用于传送存储的电荷的电荷转移晶体管。电荷存储区可以包括在通过电荷转移晶体管的第一方向上的夹持，所述电荷转移晶体管限定与电荷转移晶体管相邻的收缩区。

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