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1. 发明授权

US10727228B2 Stacked integrated circuit 有权
公开(公告)号：US10727228B2
公开(公告)日：2020-07-28
申请号：US16233229
申请日：2018-12-27
申请人： FUJI ELECTRIC CO., LTD.
发明人： Morio Iwamizu
IPC分类号： H01L21/70 , H01L27/092 , H01L29/10 , H01L29/78 , H01L21/8238 , H01L29/08 , H01L29/06 , H01L29/739 , H01L29/417 , H01L25/07 , H01L23/495
摘要： A stacked integrated circuit encompasses a lower chip including a lower semiconductor element and an upper surface-electrode electrically connected to an upper main-electrode region of the lower semiconductor element, the upper main-electrode region is located on an upper-surface side of the lower semiconductor element; and an upper chip including an upper semiconductor element and a lower surface-electrode electrically connected to a lower main-electrode region of the upper semiconductor element, the lower main-electrode region is located on a lower-surface side of the upper semiconductor element, the lower surface-electrode is metallurgically in contact with the upper surface-electrode.

2. 发明授权

US11594502B2 Semiconductor device having conductive film 有权
公开(公告)号：US11594502B2
公开(公告)日：2023-02-28
申请号：US16455826
申请日：2019-06-28
申请人： FUJI ELECTRIC CO., LTD.
发明人： Morio Iwamizu
IPC分类号： H01L23/00
摘要： A semiconductor device includes first conductive films that are provided, above a semiconductor substrate, at least on both sides of a non-formation region in which the first conductive films are not provided; an interlayer dielectric film including a first portion that is provided on the non-formation region, second portions provided above the first conductive film on both sides of the non-formation region, and a step portion that connects the first portion and the second portions; a second conductive film provided above the interlayer dielectric film; through terminal portions that penetrate the second portions of the interlayer dielectric film; and a wire bonded with the second conductive film above the first portion, where the through terminal portions include one or more first through terminal portions and one or more second through terminal portions being provided at positions opposite to each other with a bonded portion of the wire being interposed therebetween.

3. 发明授权

US10187049B2 Driving device and inductive load driving device 有权
公开(公告)号：US10187049B2
公开(公告)日：2019-01-22
申请号：US15437475
申请日：2017-02-21
申请人： FUJI ELECTRIC CO. LTD.
发明人： Morio Iwamizu
IPC分类号： H03K17/14 , H03K17/081 , H03K17/082
摘要： To provide an inductive load driving device which can control a clamp voltage using a ground voltage as a reference, with a simple structure. An inductive load driving device includes: an inductive load whose one end is connected to a power source and whose other end is connected to a ground: an output stage semiconductor switch element connected in series with the inductive load; a clamping circuit connected between a high-voltage side electrode and a control electrode of the output stage semiconductor switch element; and a resistance value control unit connected between the control electrode of the output stage semiconductor switch element and the ground.

4. 发明授权

US09438032B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09438032B2
公开(公告)日：2016-09-06
申请号：US14470223
申请日：2014-08-27
申请人： FUJI ELECTRIC CO., LTD.
发明人： Morio Iwamizu
IPC分类号： H02H9/02 , H02H7/20 , H02H11/00
CPC分类号： H02H9/025 , H02H7/205 , H02H11/002
摘要： The semiconductor device includes a power chip including a switching element that switches a supply of power from a power supply to a load between an on-state and an off-state, a control chip in which is incorporated a control circuit that controls the switching element of the power chip, and a reverse connection protection circuit, provided in the control chip, that controls the switching element of the power chip into an on-state when the power supply is reverse-connected, wherein the reverse connection protection circuit has protective resistors, interposed between the control circuit and the positive electrode side of the power supply, and a control voltage formation circuit into which is input an intermediate voltage of the protective resistors and which forms a control voltage that controls the switching element of the power chip into an on-state when the power supply is reverse-connected.
摘要翻译：半导体器件包括电源芯片，其包括开关元件，该开关元件将电源从电源切换到导通状态和截止状态之间的负载;控制芯片，其中包括控制电路，控制电路控制开关元件以及设置在控制芯片中的反向连接保护电路，其在电源反向连接时将电力芯片的开关元件控制为接通状态，其中反向连接保护电路具有保护电阻器插入在电源的控制电路和正极侧之间，以及控制电压形成电路，输入保护电阻的中间电压并形成控制电压的控制电压形成电路，该控制电压将功率芯片的开关元件控制为电源反接时的导通状态。

5. 发明授权

US09252693B2 Stepping motor drive device 有权
标题翻译：步进电机驱动装置
公开(公告)号：US09252693B2
公开(公告)日：2016-02-02
申请号：US14304006
申请日：2014-06-13
申请人： FUJI ELECTRIC CO., LTD.
发明人： Morio Iwamizu
IPC分类号： H02P8/00 , H02P8/36
CPC分类号： H02P8/36
摘要： In a stepping motor drive device, it is possible to prevent malfunction due to negative current from a stepping motor of a plurality of power MOSFETs that apply drive voltage in a complementary way to paired coils of the stepping motor. A fall delay circuit delays the timing of the fall of input pulse signals applied in a complementary way to the gate of each of a plurality of MOSFETs that apply drive voltage in a complementary way to paired coils of a stepping motor by a time Td, wherein Td>Trise−Tfall, in accordance with a rise time Trise when turning on, and a fall time Tfall when turning off, the relevant MOSFET, and after one MOSFET is turned on, another MOSFET is turned off.
摘要翻译：在步进电动机驱动装置中，能够防止来自与步进电动机的成对线圈互补的驱动电压的多个功率MOSFET的步进电动机的负电流的故障。下降延迟电路延迟以互补的方式施加的输入脉冲信号的下降时间，其中多个MOSFET中的每一个的栅极以与时间Td的步进电机的成对线圈互补的方式施加驱动电压，其中 Td> Trise-Tfall，根据打开时的上升时间Trise，关闭时的下降时间Tfall，相关的MOSFET，并且在一个MOSFET导通之后，另一个MOSFET关闭。

6. 发明授权

US11329474B2 Switching controller with adaptive overheating protection 有权
公开(公告)号：US11329474B2
公开(公告)日：2022-05-10
申请号：US16864438
申请日：2020-05-01
申请人： Fuji Electric Co., Ltd.
发明人： Sho Nakagawa , Morio Iwamizu
IPC分类号： H02H3/087 , H02H5/04 , G05F1/573 , H03K17/0812 , H01L29/866 , G01K7/01 , H03K3/037 , H03K19/003 , G01R19/165 , H03K17/08
摘要： A semiconductor device includes a power semiconductor switch; a logic circuit connected to an input terminal; an overheat detection circuit that outputs to the logic circuit an overheat detection signal when a temperature of the power semiconductor switch exceeds an overheat detection threshold; and an overcurrent detection circuit that monitors a current that flows through the power semiconductor switch and that outputs to the logic circuit and to the overheat detection circuit an overcurrent detection signal when the current that flows through the power semiconductor switch exceeds a prescribed threshold, wherein in the overheat detection circuit, the overheat detection threshold values is changed from a first threshold value to a second threshold value that is lower than the first threshold value when the overheat detection circuit receives the overcurrent detection signal from the overcurrent detection circuit.

7. 发明授权

US10978446B2 Semiconductor device 有权
公开(公告)号：US10978446B2
公开(公告)日：2021-04-13
申请号：US16523004
申请日：2019-07-26
申请人： FUJI ELECTRIC CO., LTD.
发明人： Morio Iwamizu , Shigeyuki Takeuchi
IPC分类号： H01L27/02 , H01L23/482 , H01L25/18 , H02H7/20
摘要： Provided is a semiconductor device capable of reducing a mounting area. A semiconductor device (100) includes a semiconductor element (50) and a control element (150) arranged on a front surface (50a) of the semiconductor element (50). The semiconductor element (50) includes a semiconductor substrate (SB) including a first region AR1 and a second region AR2 adjacent to each other, a first MOS transistor (Tr1) provided is the first region (AR1), and a second MOS transistor (Tr2) provided in the second region (AR2). A first drain region (3a) of the first MOS transistor (Tr1) is connected to a second drain region (3b) of the second MOS transistor (Tr2). The control element (150) turns on and off the first MOS transistor (Tr1) and the second MOS transistor (Tr2).

8. 发明申请

US20190259758A1 STACKED INTEGRATED CIRCUIT 审中-公开
公开(公告)号：US20190259758A1
公开(公告)日：2019-08-22
申请号：US16233229
申请日：2018-12-27
申请人： FUJI ELECTRIC CO., LTD.
发明人： Morio Iwamizu
IPC分类号： H01L27/092 , H01L29/10 , H01L29/78 , H01L29/06 , H01L29/08 , H01L21/8238
摘要： A stacked integrated circuit encompasses a lower chip including a lower semiconductor element and an upper surface-electrode electrically connected to an upper main-electrode region of the lower semiconductor element, the upper main-electrode region is located on an upper-surface side of the lower semiconductor element; and an upper chip including an upper semiconductor element and a lower surface-electrode electrically connected to a lower main-electrode region of the upper semiconductor element, the lower main-electrode region is located on a lower-surface side of the upper semiconductor element, the lower surface-electrode is metallurgically in contact with the upper surface-electrode.

9. 发明授权

US10103539B2 Semiconductor device and current limiting method 有权
公开(公告)号：US10103539B2
公开(公告)日：2018-10-16
申请号：US14934744
申请日：2015-11-06
申请人： FUJI ELECTRIC CO., LTD.
发明人： Morio Iwamizu , Shigeyuki Takeuchi
IPC分类号： H02H9/08 , H02H9/02 , H03K17/082
摘要： A semiconductor device, including a main transistor configured to supply power from a power source to a load, and a current limiting device including a control transistor. The current limiting device is configured to detect that the current flowing from the main transistor is an overcurrent, and to limit the current upon determining that the current is equal to or greater than a current limit value, and an operating voltage of the control transistor is equal to or greater than a current limiting activation voltage. The current limit value is a threshold for determining whether the current is greater than an operating current of the main transistor for the load to operate in a steady state. The current limiting activation voltage is a sum of a correction voltage and a predetermined threshold voltage at the gate of the control transistor when the current rises to the current limit value.

10. 发明授权

US09490793B2 Insulated-gate type device driving circuit 有权
标题翻译：绝缘栅型器件驱动电路
公开(公告)号：US09490793B2
公开(公告)日：2016-11-08
申请号：US14621376
申请日：2015-02-12
申请人： FUJI ELECTRIC CO., LTD.
发明人： Morio Iwamizu , Shinji Yamashina
IPC分类号： H03B1/00 , H03K17/0412 , H01L27/06 , H01L27/088 , H03K17/687 , H01L21/8234
CPC分类号： H03K17/04123 , H01L21/823487 , H01L27/0629 , H01L27/0883 , H03K17/687
摘要： An insulated-gate type device driving circuit for driving an insulated-gate semiconductor element based on a gate signal inputted from the outside includes a gate voltage control semiconductor element which is connected between a gate and a source of the insulated-gate semiconductor element, and a pull-up element which is constituted by a depletion type MOSFET connected between a gate and a drain of the gate voltage control semiconductor element. The gate voltage control semiconductor element is driven by a voltage applied to the gate of the insulated-gate semiconductor element, and a back gate of the MOSFET constituting the pull-up element is grounded to prevent a parasitic transistor from being formed.
摘要翻译：用于根据从外部输入的栅极信号来驱动绝缘栅半导体元件的绝缘栅型器件驱动电路包括连接在绝缘栅极半导体元件的栅极和源极之间的栅极电压控制半导体元件，以及上拉元件由连接在栅极电压控制半导体元件的栅极和漏极之间的耗尽型MOSFET构成。栅极电压控制半导体元件由施加到绝缘栅极半导体元件的栅极的电压驱动，并且构成上拉元件的MOSFET的背栅接地，以防止形成寄生晶体管。

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